H11A1SVM [ONSEMI]
6-Pin DIP Package Phototransistor Output Optocoupler, MDIP 6L, 1000-BULK;型号: | H11A1SVM |
厂家: | ONSEMI |
描述: | 6-Pin DIP Package Phototransistor Output Optocoupler, MDIP 6L, 1000-BULK 输出元件 光电 |
文件: | 总9页 (文件大小:266K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
January 2009
4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M,
H11A1M, H11A2M, H11A3M, H11A4M, H11A5M
General Purpose 6-Pin Phototransistor Optocouplers
Features
Description
■ UL recognized (File # E90700, Volume 2)
■ VDE recognized (File # 102497)
– Add option V (e.g., 4N25VM)
The general purpose optocouplers consist of a gallium
arsenide infrared emitting diode driving a silicon pho-
totransistor in a 6-pin dual in-line package.
Applications
■ Power supply regulators
■ Digital logic inputs
■ Microprocessor inputs
Schematic
Package Outlines
1
6
5
4
2
3
NC
PIN 1. ANODE
2. CATHODE
3. NO CONNECTION
4. EMITTER
5. COLLECTOR
6. BASE
©2005 Fairchild Semiconductor Corporation
4NXXM, H11AXM Rev. 1.0.2
www.fairchildsemi.com
Absolute Maximum Ratings (T = 25°C unless otherwise specified)
A
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
Value
Units
TOTAL DEVICE
T
Storage Temperature
Operating Temperature
-40 to +150
-40 to +100
260 for 10 sec
250
°C
°C
STG
T
OPR
T
Wave solder temperature (see page 8 for reflow solder profile)
°C
SOL
P
Total Device Power Dissipation @ T = 25°C
mW
D
A
Derate above 25°C
2.94
EMITTER
I
DC/Average Forward Input Current
Reverse Input Voltage
60
6
mA
V
F
V
R
I (pk)
Forward Current – Peak (300µs, 2% Duty Cycle)
3
A
F
P
LED Power Dissipation @ T = 25°C
120
1.41
mW
mW/°C
D
A
Derate above 25°C
DETECTOR
V
V
V
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Collector Voltage
30
70
V
V
CEO
CBO
ECO
7
V
P
Detector Power Dissipation @ T = 25°C
150
1.76
mW
mW/°C
D
A
Derate above 25°C
Electrical Characteristics (T = 25°C unless otherwise specified)
A
Individual Component Characteristics
Symbol
EMITTER
Parameter
Test Conditions
Min.
Typ.* Max. Unit
V
Input Forward Voltage
I = 10mA
1.18
1.50
10
V
F
F
I
Reverse Leakage Current
V = 6.0V
0.001
µA
R
R
DETECTOR
BV
BV
BV
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Dark Current
Collector-Base Dark Current
Capacitance
I = 1.0mA, I = 0
30
70
7
100
120
10
V
V
CEO
CBO
ECO
C
F
I = 100µA, I = 0
C
F
I = 100µA, I = 0
V
E
F
I
I
V
= 10V, I = 0
1
50
20
nA
nA
pF
CEO
CBO
CE
CB
CE
F
V
V
= 10V
C
= 0V, f = 1 MHz
8
CE
Isolation Characteristics
Symbol Characteristic
Test Conditions
Min. Typ.* Max.
Units
V
R
C
Input-Output Isolation Voltage
Isolation Resistance
f = 60Hz, t = 1 sec
7500
Vac(pk)
Ω
ISO
ISO
ISO
11
V
V
= 500 VDC
10
I-O
I-O
Isolation Capacitance
= &, f = 1MHz
0.2
2
pF
*Typical values at T = 25°C
A
©2005 Fairchild Semiconductor Corporation
4NXXM, H11AXM Rev. 1.0.2
www.fairchildsemi.com
2
Electrical Characteristics (Continued) (T = 25°C unless otherwise specified)
A
Transfer Characteristics
Symbol
Parameter
Test Conditions
Device
Min. Typ.* Max. Unit
DC CHARACTERISTICS
CTR
Current Transfer Ratio,
Collector to Emitter
I = 10mA, V = 10V
4N35M, 4N36M,
4N37M
100
%
F
CE
H11A1M
H11A5M
50
30
20
4N25M, 4N26M
H11A2M, H11A3M
4N27M, 4N28M
H11A4M
10
40
I = 10mA, V = 10V,
4N35M, 4N36M,
4N37M
F
CE
T = -55°C
A
I = 10mA, V = 10V,
4N35M, 4N36M,
4N37M
40
F
CE
T = +100°C
A
V
Collector-Emitter
Saturation Voltage
I = 2mA, I = 50mA
4N25M, 4N26M,
4N27M, 4N28M,
0.5
0.3
0.4
V
CE (SAT)
C
F
I = 0.5mA, I = 10mA
4N35M, 4N36M,
4N37M
C
F
H11A1M, H11A2M,
H11A3M, H11A4M,
H11A5M
AC CHARACTERISTICS
T
Non-Saturated
Turn-on Time
I = 10mA, V = 10V,
4N25M, 4N26M,
4N27M, 4N28M,
H11A1M, H11A2M,
H11A3M, H11A4,
H11A5M
2
µs
ON
F
CC
R = 100Ω (Fig. 11)
L
I = 2mA, V = 10V,
4N35M, 4N36M,
4N37M
2
2
10
10
µs
µs
C
CC
R = 100Ω (Fig. 11)
L
T
Turn-off Time
I = 10mA, V = 10V,
4N25M, 4N26M,
4N27M, 4N28M,
H11A1M, H11A2M,
H11A3M, H11A4M,
H11A5M
OFF
F
CC
R = 100Ω (Fig. 11)
L
I = 2mA, V = 10V,
4N35M, 4N36M,
4N37M
2
C
CC
R = 100Ω (Fig. 11)
L
* Typical values at T = 25°C
A
©2005 Fairchild Semiconductor Corporation
4NXXM, H11AXM Rev. 1.0.2
www.fairchildsemi.com
3
Typical Performance Curves
Fig. 2 Normalized CTR vs. Forward Current
Fig. 1 LED Forward Voltage vs. Forward Current
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
T
= 5.0V
= 25°C
Normalized to
= 10 mA
CE
I
A
F
T
T
T
= -55°C
= 25°C
= 100°C
A
A
A
1
10
100
0
2
4
6
8
10
12
14
16
18
20
I
- LED FORWARD CURRENT (mA)
I - FORWARD CURRENT (mA)
F
F
Fig. 4 CTR vs. RBE (Unsaturated)
Fig. 3 Normalized CTR vs. Ambient Temperature
1.4
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
I
= 20 mA
F
1.2
1.0
0.8
0.6
0.4
0.2
I
= 5 mA
F
I
= 10 mA
F
I
= 5 mA
F
I
= 10 mA
F
I
= 20 mA
F
V
CE
= 5.0 V
Normalized to
= 10 mA
I
F
T
= 25°C
A
-60
-40
-20
0
20
40
60
80
100
10
100
1000
R
BE
- BASE RESISTANCE (kΩ)
T
- AMBIENT TEMPERATURE (°C)
A
Fig. 6 Collector-Emitter Saturation Voltage
vs. Collector Current
Fig. 5 CTR vs. RBE (Saturated)
100
10
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
T
= 25˚C
A
V
CE
= 0.3 V
I
= 20 mA
F
1
I
= 10 mA
F
I
= 2.5 mA
F
0.1
I
= 5 mA
F
I
= 20 mA
F
0.01
I
= 10 mA
I
= 5 mA
F
F
0.001
10
100
1000
0.01
0.1
1
10
R - BASE RESISTANCE (k Ω)
BE
I
- COLLECTOR CURRENT (mA)
C
©2005 Fairchild Semiconductor Corporation
4NXXM, H11AXM Rev. 1.0.2
www.fairchildsemi.com
4
Typical Performance Curves (Continued)
Fig. 8 Normalized t vs. R
Fig. 7 Switching Speed vs. Load Resistor
on
BE
1000
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
I
V
T
= 10 mA
= 10 V
F
V
I
R
10 V
CC =
= 2 mA
CC
= 25°C
C
A
= 100 Ω
L
100
10
1
T
off
T
f
T
on
T
r
0.1
0.1
1
10
100
10
100
R
1000
10000
100000
R-LOAD RESISTOR (kΩ)
- BASE RESISTANCE (k Ω)
BE
Fig. 10 Dark Current vs. Ambient Temperature
Fig. 9 Normalized t vs. R
off
BE
10000
1000
100
10
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
V
= 10 V
= 25°C
CE
T
A
1
V
I
R
10 V
CC =
= 2 mA
C
0.1
= 100 Ω
L
0.01
0.001
0
20
40
60
80
100
10
100
1000
10000
100000
T
- AMBIENT TEMPERATURE (°C)
A
R - BASE RESISTANCE (k Ω)
BE
TEST CIRCUIT
WAVE FORMS
VCC = 10V
INPUT PULSE
IC
IF
RL
10%
90%
INPUT
OUTPUT
OUTPUT PULSE
RBE
tr
tf
toff
ton
IF
IC
Adjust to produce = 2 mA
Figure 11. Switching Time Test Circuit and Waveforms
©2005 Fairchild Semiconductor Corporation
4NXXM, H11AXM Rev. 1.0.2
www.fairchildsemi.com
5
Package Dimensions
Through Hole
0.4" Lead Spacing
8.13–8.89
6
4
8.13–8.89
6
4
6.10–6.60
6.10–6.60
Pin 1
1
3
Pin 1
1
3
5.08 (Max.)
3.28–3.53
0.25–0.36
7.62 (Typ.)
5.08 (Max.)
3.28–3.53
0.25–0.36
0.38 (Min.)
2.54–3.81
2.54 (Bsc)
0.38 (Min.)
2.54–3.81
2.54 (Bsc)
0.20–0.30
(0.86)
15° (Typ.)
(0.86)
0.41–0.51
0.76–1.14
0.20–0.30
10.16–10.80
1.02–1.78
0.41–0.51
0.76–1.14
1.02–1.78
Surface Mount
(1.78)
8.13–8.89
6
4
(1.52)
(2.54)
(7.49)
6.10–6.60
8.43–9.90
(10.54)
1
3
(0.76)
Pin 1
Rcommended Pad Layout
0.25–0.36
3.28–3.53
5.08
(Max.)
0.20–0.30
0.38 (Min.)
0.16–0.88
(8.13)
2.54 (Bsc)
(0.86)
0.41–0.51
0.76–1.14
1.02–1.78
Note:
All dimensions in mm.
©2005 Fairchild Semiconductor Corporation
4NXXM, H11AXM Rev. 1.0.2
www.fairchildsemi.com
6
Ordering Information
Order Entry Identifier
(Example)
Option
Description
No option
4N25M
4N25SM
Standard Through Hole Device
Surface Mount Lead Bend
Surface Mount; Tape and Reel
0.4" Lead Spacing
S
SR2
T
4N25SR2M
4N25TM
V
4N25VM
VDE 0884
TV
4N25TVM
4N25SVM
4N25SR2VM
VDE 0884, 0.4" Lead Spacing
VDE 0884, Surface Mount
VDE 0884, Surface Mount, Tape and Reel
SV
SR2V
Marking Information
1
2
4N25
V X YY Q
6
5
3
4
Definitions
1
2
Fairchild logo
Device number
VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
3
4
5
6
One digit year code, e.g., ‘7’
Two digit work week ranging from ‘01’ to ‘53’
Assembly package code
*Note – Parts that do not have the ‘V’ option (see definition 3 above) that are
marked with date code ‘325’ or earlier are marked in portrait format.
©2005 Fairchild Semiconductor Corporation
4NXXM, H11AXM Rev. 1.0.2
www.fairchildsemi.com
7
Carrier Tape Specification
12.0 ± 0.1
2.0 ± 0.05
4.5 ± 0.20
Ø1.5 MIN
1.75 ± 0.10
0.30 ± 0.05
4.0 ± 0.1
11.5 ± 1.0
24.0 ± 0.3
9.1 ± 0.20
21.0 ± 0.1
Ø1.5 ± 0.1/-0
10.1 ± 0.20
0.1 MAX
User Direction of Feed
Reflow Profile
300
280
260
240
220
200
180
160
140
120
100
80
260°C
>245°C = 42 Sec
Time above
183°C = 90 Sec
°C
1.822°C/Sec Ramp up rate
60
40
33 Sec
20
0
0
60
120
180
270
360
Time (s)
©2005 Fairchild Semiconductor Corporation
4NXXM, H11AXM Rev. 1.0.2
www.fairchildsemi.com
8
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
FRFET®
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
Global Power ResourceSM
Green FPS™
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
Green FPS™ e-Series™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Current Transfer Logic™
EcoSPARK®
™
EfficentMax™
EZSWITCH™ *
Saving our world, 1mW/W/kW at a time™
SmartMax™
™
SMART START™
TriFault Detect™
µSerDes™
SPM®
®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
Fairchild®
Motion-SPM™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
OPTOLOGIC®
OPTOPLANAR®
®
FAST®
SyncFET™
FastvCore™
FlashWriter® *
FPS™
®
PDP SPM™
Power-SPM™
PowerTrench®
PowerXS™
The Power Franchise®
F-PFS™
* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR
CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE
SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDíS WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,
WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILDíS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com,
under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts.
Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications,
and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status
Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Advance Information
Preliminary
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
First Production
Full Production
Not In Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
No Identification Needed
Obsolete
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I38
©2005 Fairchild Semiconductor Corporation
4NXXM, H11AXM Rev. 1.0.2
www.fairchildsemi.com
9
相关型号:
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Transistor Output Optocoupler, 1-Element, 7500V Isolation, 0.400 INCH, LEAD FREE, DIP-6
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