H11AA4S-M [ONSEMI]
Transistor Output Optocoupler, 1-Element, 7500V Isolation;
| 型号： | H11AA4S-M |
| 厂家： | 
ONSEMI |
| 描述： | Transistor Output Optocoupler, 1-Element, 7500V Isolation |
| 文件： | 总10页 (文件大小：262K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
September 2009
H11AA1M, H11AA2M, H11AA3M, H11AA4M
AC Input/Phototransistor Optocouplers
Description
The H11AAXM series consists of two gallium-arsenide
infrared emitting diodes connected in inverse parallel
driving a single silicon phototransistor output.
Features
■ Bi-polar emitter input
■ Built-in reverse polarity input protection
■ Underwriters Laboratory (UL) recognized File
#E90700, Volume 2
■ VDE approved File #102497 (ordering option ‘V’)
Applications
■ AC line monitor
■ Unknown polarity DC sensor
■ Telephone line interface
Schematic
Package Outlines
1
2
6
BASE
5 COLL
3
4 EMITTER
©2006 Fairchild Semiconductor Corporation
www.fairchildsemi.com
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3
Absolute Maximum Ratings (T =25°C Unless otherwise specified)
A
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
Device
Value
Units
TOTAL DEVICE
T
Storage Temperature
All
All
All
All
-40 to +150
-40 to +100
260 for 10 sec
250
°C
°C
STG
T
Operating Temperature
Lead Solder Temperature
OPR
T
°C
SOL
P
mW
mW/°C
Total Device Power Dissipation
Derate Linearly From 25°C
D
2.94
EMITTER
I
Continuous Forward Current
All
All
All
60
1.0
mA
A
F
I (pk)
Forward Current – Peak (1µs pulse, 300 pps)
F
P
120
1.41
mW
LED Power Dissipation
D
Derate Linearly From 25°C
mW/°C
DETECTOR
I
Continuous Collector Current
All
All
50
mA
mW
C
P
150
1.76
Detector Power Dissipation
Derate linearity from 25°C
D
mW/°C
©2006 Fairchild Semiconductor Corporation
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3
www.fairchildsemi.com
2
Electrical Characteristics (T = 25°C Unless otherwise specified.)
A
Individual Component Characteristics
Symbol
EMITTER
Parameter
Test Conditions
Device
Min.
Typ.*
Max. Unit
V
Input Forward Voltage
Capacitance
I = 10mA
All
All
1.17
80
1.5
V
F
F
C
V = 0 V, f = 1.0MHz
pF
J
F
DETECTOR
BV
Breakdown Voltage
Collector to Emitter
I
I
= 1.0mA, I = 0
All
30
100
V
CEO
C
F
BV
BV
BV
Collector to Base
Emitter to Base
= 100µA, I = 0
All
All
All
70
5
120
10
10
1
V
V
CBO
EBO
ECO
C
F
I = 100µA, I = 0
E
F
Emitter to Collector
I = 100µA, I = 0
7
V
E
F
I
Leakage Current
Collector to Emitter
V
= 10 V, I = 0
H11AA1M
H11AA3M
H11AA4M
50
nA
CEO
CE
F
H11AA2M
All
1
200
C
Capacitance Collector
to Emitter
V
= 0, f = 1MHz
10
pF
CE
CE
C
C
Collector to Base
Emitter to Base
V
V
= 0, f = 1MHz
= 0, f = 1MHz
All
All
80
15
pF
pF
CB
CB
EB
EB
*Typical values at T = 25°C
A
Transfer Characteristics
Symbol Characteristics
Test Conditions
Device
Min.
Typ.* Max. Units
CTR
Current Transfer Ratio,
Collector to Emitter
I = 10mA, V = 10V
H11AA4M
H11AA3M
H11AA1M
H11AA2M
All
100
50
%
CE
F
CE
20
10
Current Transfer Ratio,
Symmetry
I = 10mA, V = 10V
.33
3.0
F
CE
(Figure 11)
V
Saturation Voltage,
Collector to Emitter
I = 10mA, I = 0.5mA
All
.40
V
CE(SAT)
F
CE
Isolation Characteristics
Symbol Characteristic
Test Conditions
Min.
Typ.*
Max.
Units
C
Package Capacitance
Input/Output
V
= 0, f = 1MHz
I-O
0.7
pF
I-O
V
R
Isolation Voltage
f = 60Hz, t = 1 sec.
= 500 VDC
7500
Vac(pk)
ISO
11
Isolation Resistance
V
10
Ω
ISO
I-O
*Typical values at T = 25°C
A
©2006 Fairchild Semiconductor Corporation
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3
www.fairchildsemi.com
3
Safety and Insulation Ratings
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol
Parameter
Min.
Typ.
Max.
Unit
Installation Classifications per DIN VDE 0110/1.89
Table 1
For Rated Main Voltage < 150Vrms
For Rated Main voltage < 300Vrms
Climatic Classification
I-IV
I-IV
55/100/21
2
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
CTI
175
V
Input to Output Test Voltage, Method b,
1594
V
V
PR
peak
V
x 1.875 = V , 100% Production Test
IORM
PR
with tm = 1 sec, Partial Discharge < 5pC
Input to Output Test Voltage, Method a,
1275
peak
V
x 1.5 = V , Type and Sample Test
PR
IORM
with tm = 60 sec, Partial Discharge < 5pC
Max. Working Insulation Voltage
Highest Allowable Over Voltage
External Creepage
V
850
6000
7
V
V
IORM
peak
V
IOTM
peak
mm
mm
mm
Ω
External Clearance
7
Insulation Thickness
0.5
9
RIO
Insulation Resistance at Ts, V = 500V
10
IO
©2006 Fairchild Semiconductor Corporation
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3
www.fairchildsemi.com
4
Typical Performance Characteristics
Fig. 2 Normalized CTR vs. Forward Current
Fig. 1 Input Voltage vs. Input Current
100
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
T
= 25°C
T = 25°C
A
A
Normalized to I = 10mA
F
80
60
V
= 5V
CE
40
20
0
-20
-40
-60
-80
-100
0
5
10
15
20
-2.0
-1.5
-1.0
-0.5
0.0
0.5
1.0
1.5
2.0
I
– FORWARD CURRENT (mA)
F
V
– INPUT VOLTAGE (V)
F
Fig. 4 CTR vs. RBE (Unsaturated)
Fig. 3 Normalized CTR vs. Ambient Temperature
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
V
= 5V
V
= 5V
CE
= 25°C
CE
Normalized to I = 10mA, T = 25°C
T
F
A
A
I
= 10mA
= 5mA
F
I
I
= 20mA
F
F
I
= 10mA
F
I
= 5mA
F
I
= 20mA
F
-60
-40
-20
0
20
40
60
80
100
10
100
– BASE RESISTANCE (kΩ)
1000
R
T
A
– AMBIENT TEMPERATURE (°C)
BE
Fig. 6 Collector-Emitter Saturation Voltage vs Collector Current
Fig. 5 CTR vs. RBE (Saturated)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
100
V
T
= 0.3V
T
= 25°C
CE
A
= 25°C
A
10
1
I
= 20mA
F
I
= 10mA
F
I
= 2.5mA
I = 5mA
F
F
I
= 5mA
F
0.1
I
= 10mA
I = 20mA
F
F
0.01
10
100
- BASE RESISTANCE (k Ω)
1000
0.001
R
BE
0.01
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
©2006 Fairchild Semiconductor Corporation
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3
www.fairchildsemi.com
5
Typical Performance Characteristics (Continued)
Fig. 7 Switching Speed vs. Load Resistor
Fig. 8 Normalized t vs. R
on
BE
1000
7
6
5
4
3
2
1
0
I
V
T
= 10mA
= 10V
V
I
= 10V
F
CC
= 2mA
CC
C
= 25°C
R
T
= 100Ω
= 25°C
L
A
T
off
T
A
100
10
1
f
T
on
T
r
0.1
10
100
R
1000
10000
100000
0.1
1
10
100
- BASE RESISTANCE (k Ω)
R – LOAD RESISTOR (kΩ)
BE
Fig. 10 Dark Current vs. Ambient Temperature
Fig. 9 Normalized t vs. R
off
BE
10000
1000
100
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
I
R
= 10V
= 2mA
= 100Ω
= 25°C
CC
C
L
T
A
V
= 30V
V
= 10V
CE
CE
1
0.1
0
20
40
60
80
100
10
100
1000
10000
100000
T
A
– AMBIENT TEMPERATURE (°C)
R
BE
– BASE RESISTANCE (kΩ)
Fig. 11 Output Symmetry Characteristics
10
5
I
=
=
- 10mA
10mA
F
I
I
I
1
I
F
I
.5
NORMALIZED TO:
= 10 V
V
.1
CE
= 10 mA
I
F
.05
THE MAXIMUM PEAK
OUTPUT CURRENT
WILL BE NO MORE
THAN THREE TIMES
THE MINIMUM PEAK
OUTPUT CURRENT AT
.01
.005
I
= ±10 mA
F
.01
.05 .1
.5
1
5
10
V
– COLLECTOR TO EMITTER VOLTAGE (V)
CE
©2006 Fairchild Semiconductor Corporation
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3
www.fairchildsemi.com
6
Package Dimensions
Through Hole
0.4" Lead Spacing
8.13–8.89
6
4
8.13–8.89
6
4
6.10–6.60
6.10–6.60
Pin 1
1
3
Pin 1
1
3
5.08 (Max.)
3.28–3.53
0.25–0.36
7.62 (Typ.)
5.08 (Max.)
3.28–3.53
0.25–0.36
0.38 (Min.)
2.54–3.81
2.54 (Bsc)
0.38 (Min.)
2.54–3.81
2.54 (Bsc)
0.20–0.30
(0.86)
15° (Typ.)
(0.86)
0.41–0.51
0.76–1.14
0.20–0.30
10.16–10.80
1.02–1.78
0.41–0.51
0.76–1.14
1.02–1.78
Surface Mount
(1.78)
8.13–8.89
6
4
(1.52)
(2.54)
(7.49)
6.10–6.60
8.43–9.90
(10.54)
1
3
(0.76)
Pin 1
Rcommended Pad Layout
0.25–0.36
3.28–3.53
5.08
(Max.)
0.20–0.30
0.38 (Min.)
0.16–0.88
(8.13)
2.54 (Bsc)
(0.86)
0.41–0.51
0.76–1.14
1.02–1.78
Note:
All dimensions in mm.
©2006 Fairchild Semiconductor Corporation
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3
www.fairchildsemi.com
7
Ordering Information
Order Entry Identifier
(Example)
Option
Description
No option
H11AA1M
H11AA1SM
Standard Through Hole Device
Surface Mount Lead Bend
Surface Mount; Tape and Reel
0.4" Lead Spacing
S
SR2
T
H11AA1SR2M
H11AA1TM
V
H11AA1VM
VDE 0884
TV
H11AA1TVM
H11AA1SVM
H11AA1SR2VM
VDE 0884, 0.4" Lead Spacing
VDE 0884, Surface Mount
VDE 0884, Surface Mount, Tape and Reel
SV
SR2V
Marking Information
1
2
H11AA1
V X YY Q
6
5
3
4
Definitions
1
2
3
Fairchild logo
Device number
VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
4
5
6
One digit year code, e.g., ‘3’
Two digit work week ranging from ‘01’ to ‘53’
Assembly package code
*Note – Parts that do not have the ‘V’ option (see definition 3 above) that
are marked with date code ‘325’ or earlier are marked in portrait format.
©2006 Fairchild Semiconductor Corporation
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3
www.fairchildsemi.com
8
Carrier Tape Specification
12.0 ± 0.1
2.0 ± 0.05
4.5 ± 0.20
Ø1.5 MIN
1.75 ± 0.10
0.30 ± 0.05
4.0 ± 0.1
11.5 ± 1.0
24.0 ± 0.3
9.1 ± 0.20
21.0 ± 0.1
Ø1.5 ± 0.1/-0
10.1 ± 0.20
0.1 MAX
User Direction of Feed
Reflow Profile
300
280
260
240
220
200
180
160
140
120
100
80
260°C
>245°C = 42 Sec
Time above
183°C = 90 Sec
°C
1.822°C/Sec Ramp up rate
60
40
33 Sec
20
0
0
60
120
180
270
360
Time (s)
©2006 Fairchild Semiconductor Corporation
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3
www.fairchildsemi.com
9
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
PowerTrench®
PowerXS™
The Power Franchise®
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™*
™*
F-PFS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
Programmable Active Droop™
QFET®
TinyBoost™
TinyBuck™
QS™
Quiet Series™
RapidConfigure™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
™
Saving our world, 1mW/W/kW at a time™
SmartMax™
TinyWire™
TriFault Detect™
TRUECURRENT™*
µSerDes™
SMART START™
SPM®
®
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
OPTOPLANAR®
FAST®
®
FastvCore™
FETBench™
PDP SPM™
Power-SPM™
Sync-Lock™
FlashWriter®
®
*
*
FPS™
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR
CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE
SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,
WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com,
under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts.
Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications,
and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of
counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are
listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have
full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information.
Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide
any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our
customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status
Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Advance Information
Preliminary
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
First Production
Full Production
Not In Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
No Identification Needed
Obsolete
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I40
©2006 Fairchild Semiconductor Corporation
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3
www.fairchildsemi.com
10
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