H11AV1AM [ONSEMI]
6-Pin DIP Phototransistor Optocouplers;
| 型号： | H11AV1AM |
| 厂家： | 
ONSEMI |
| 描述： | 6-Pin DIP Phototransistor Optocouplers 输出元件 光电 |
| 文件： | 总11页 (文件大小：415K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
6-Pin DIP Phototransistor
Optocouplers
H11AV1M, H11AV1AM
Description
The general purpose optocouplers consist of a gallium arsenide
infrared emitting diode driving a silicon phototransistor in a 6−pin
dual in−line white package.
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Features
PDIP6 8.51x6.35, 2.54P
• H11AV1M and H11AV1AM Feature 0.3” and 0.4” Input−Output
Lead Spacing Respectively
6
6
CASE 646BY
1
• Safety and Regulatory Approvals:
♦ UL1577, 4,170 VAC
for 1 Minute
RMS
PDIP6 8.51x6.35, 2.54P
CASE 646BX
♦ DIN−EN/IEC60747−5−5, 850 V Peak Working Insulation Voltage
Applications
1
1
• Power Supply Regulators
• Digital Logic Inputs
• Microprocessor Inputs
PDIP6 8.51x6.35, 2.54P
CASE 646BZ
6
MARKING DIAGRAM
ON
H11AV1
VXYYQ
H11AV1 = Specific Device Code
V
= DIN EN/IEC60747−5−5 Option (only
appears on component ordered with
this option)
X
YY
Q
= One−Digit Year Code
= Digit Work Week
= Assembly Package Code
SCHEMATIC
ANODE 1
6
5
BASE
CATHODE 2
N/C 3
COLLECTOR
4
EMITTER
ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of
this data sheet.
© Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
March, 2020 − Rev. 2
H11AV1M/D
H11AV1M, H11AV1AM
SAFETY AND INSULATION RATINGS (As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical
insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective
circuits.)
Parameter
Characteristics
Installation Classifications per DIN VDE 0110/1.89 Table 1,
For Rated Mains Voltage
<150 V
<300 V
I–IV
I–IV
RMS
RMS
Climatic Classification
55/100/21
2
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
175
Symbol
Parameter
Value
Unit
V
PR
Input−to−Output Test Voltage, Method A, V
x 1.6 = V , Type and Sample Test
1360
V
peak
IORM
PR
with t = 10 s, Partial Discharge < 5 pC
m
Input−to−Output Test Voltage, Method B, V
x 1.875 = V , 100% Production Test
PR
1594
V
peak
IORM
with t = 1 s, Partial Discharge < 5 pC
m
V
Maximum Working Insulation Voltage
Highest Allowable Over−Voltage
External Creepage
850
6000
≥7
V
V
IORM
peak
V
IOTM
peak
mm
mm
mm
mm
°C
External Clearance
≥7
External Clearance (for Option TV, 0.4” Lead Spacing)
Distance Through Insulation (Insulation Thickness)
Case Temperature (Note 1)
≥10
≥0.5
175
350
800
DTI
T
S
I
Input Current (Note 1)
mA
mW
ꢀ
S,INPUT
P
Output Power (Note 1)
S,OUTPUT
9
R
Insulation Resistance at T , V = 500 V (Note 1)
>10
IO
S
IO
1. Safety limit values – maximum values allowed in the event of a failure.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Max
Unit
TOTAL DEVICE
T
Storage Temperature
Operating Temperature
Junction Temperature
Lead Solder Temperature
−40 to +125
−40 to +100
−40 to +125
260 for 10 seconds
270
°C
°C
STG
OPR
T
T
J
°C
T
°C
SOL
P
Total Device Power Dissipation @ T = 25°C
mW
mW/°C
D
A
Derate Above 25°C
2.94
EMITTER
I
DC / Average Forward Input Current
Reverse Input Voltage
60
6
mA
V
F
V
P
R
LED Power Dissipation @ T = 25°C
120
1.41
mW
D
A
Derate Above 25°C
mW/°C
DETECTOR
V
CEO
V
CBO
V
ECO
Collector−to−Emitter Voltage
Collector−to−Base Voltage
Emitter−to−Collector Voltage
70
70
V
V
7
V
P
D
Detector Power Dissipation @ T = 25°C
150
1.76
mW
mW/°C
A
Derate Above 25°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
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2
H11AV1M, H11AV1AM
ELECTRICAL CHARACTERISTICS − INDIVIDUAL COMPONENT CHARACTERISTICS
(T = 25°C unless otherwise noted)
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
EMITTER
Input Forward Voltage (I = 10 mA)
T = 25°C
0.80
0.90
0.70
−
1.18
1.28
1.05
−
1.50
1.70
1.40
10
V
V
F
A
F
T = −55°C
A
T = 100°C
A
I
R
Reverse Leakage Current
V
R
= 6.0 V
ꢁ
A
DETECTOR
BV
BV
BV
Collector−to−Emitter Breakdown Voltage
Collector−to−Base Breakdown Voltage
Emitter−to−Collector Breakdown Voltage
Collector−to−Emitter Dark Current
Collector−to−Base Dark Current
Capacitance
I
I
= 1.0 mA, I = 0
70
70
7
100
1200
10
−
−
V
V
CEO
CBO
ECO
C
F
= 100 ꢁ A, I = 0
C
F
I = 100 ꢁ A, I = 0
E
−
V
F
I
I
V
= 10 V, I = 0
−
1
50
−
nA
nA
pF
CEO
CBO
CE
CB
CE
F
V
V
= 10 V
−
0.5
8
C
= 0 V, f = 1 MHz
−
−
CE
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ELECTRICAL CHARACTERISTICS − TRANSFER CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
DC CHARACTERISTIC
CTR
Current Transfer Ratio, Collector−to−Emitter
Saturation Voltage, Collector−to−Emitter
I = 10 mA, V = 10 V
100
−
−
300
0.4
%
V
F
CE
V
I
C
= 2 mA, I = 20 mA
−
CE (SAT)
F
AC CHARACTERISTIC
T
Non−Saturated Turn−on Time
I
= 2 mA, V = 10 V, R = 100
ꢀ
ꢀ
−
−
−
−
15
15
ꢁ s
ꢁ s
ON
C
CC
L
(Figure 11)
T
OFF
Non Saturated Turn−off Time
I = 2 mA, V = 10 V, R = 100
C CC L
(Figure 11)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ELECTRICAL CHARACTERISTICS − ISOLATION CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
VISO
Parameter
Input−Output Isolation Voltage
Isolation Capacitance
Test Conditions
t = 1 Minute
Min
4170
−
Typ
−
Max
−
Unit
VAC
RMS
CISO
V
I−O
V
I−O
= 0 V, f = 1 MHz
0.2
−
−
pF
RISO
Isolation Resistance
=
500 VDC, T = 25°C
1011
−
ꢀ
A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
H11AV1M, H11AV1AM
TYPICAL PERFORMANCE CURVES
1.6
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
V
T
A
= 5.0 V
= 25°C
Normalized to
= 10 mA
CE
I
F
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
T
= −55_C
A
T
= 25_C
A
T
A
= 100_C
1
10
100
0
2
4
6
8
10
12
14
16
18
20
I – LED FORWARD CURRENT (mA)
F
I – LED FORWARD CURRENT (mA)
F
Figure 1. LED Forward Voltage vs. Forward Current
Figure 2. Normalized CTR vs. Forward Current
1.4
1.2
1.0
0.9
I
F
= 20 mA
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
I
= 5 mA
F
I
F
= 10 mA
1.0
0.8
0.6
0.4
0.2
I
F
= 5 mA
I
I
= 10 mA
= 20 mA
F
F
V
= 5.0 V
CE
Normalized to
I
F
= 10 mA
T
A
= 25_C
20
40
60
80
100
−60
−40
−20
0
10
100
1000
T
A
− AMBIENT TEMPERATURE (°C)
R
− BASE RESISTANCE (kꢀ)
BE
Figure 3. Normalized CTR vs. Ambient Temperature
Figure 4. CTR vs. RBE (Unsaturated)
100
10
1.0
0.9
T
A
= 25°C
I
F
= 20 mA
V
= 3.0 V
CE
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
I
= 5 mA
F
1
I
F
= 2.5 mA
I
= 10 mA
F
0.1
I
F
= 20 mA
0.01
0.001
I
F
= 5 mA
I
F
= 10 mA
0.01
0.1
1
10
10
100
1000
R
− BASE RESISTANCE (kꢀ)
I − COLLECTOR CURRENT (mA)
C
BE
Figure 5. CTR vs. RBE (Saturated)
Figure 6. Collector−Emitter Saturation Voltage vs.
Collector Current
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4
H11AV1M, H11AV1AM
TYPICAL PERFORMANCE CURVES (continued)
1000
100
10
5.0
4.5
4.0
3.5
3.0
I
V
T
= 10 mA
V
= 10 V
CC
= 2 mA
= 100 ꢀ
L
F
= 10 V
I
C
CC
= 25_C
R
A
T
off
T
f
2.5
2.0
1.5
1.0
0.5
T
on
1
T
r
0.1
10
100
1000
10000
100000
0.1
1
10
100
R
– BASE RESISTANCE (kꢀ)
R – LOAD RESISTOR (kꢀ)
BE
Figure 7. Switching Speed vs. Load Resistor
Figure 8. Normalized ton vs. RBE
10000
1000
100
10
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
V
T
A
= 10 V
= 25_C
CE
1
V
= 10 V
= 2 mA
= 100 ꢀ
CC
0.5
0.4
0.3
0.2
0.1
0.1
I
C
R
L
0.01
0.001
0
20
40
60
80
100
10
100
1000
10000
100000
R
– BASE RESISTANCE (kꢀ)
T – AMBIENT TEMPERATURE (_C)
A
BE
Figure 9. Normalized toff vs. RBE
Figure 10. Dark Current vs. Ambient Temperature
SWITCHING TIME TEST CIRCUIT AND WAVEFORM
WAVE FORMS
TEST CIRCUIT
VCC = 10 V
INPUT PULSE
IC
IF
RL
10%
INPUT
OUTPUT
OUTPUT PULSE
90%
RBE
t
r
tf
toff
ton
Adjust I to produce I = 2 mA
F
C
Figure 11. Switching Time Test Circuit and Waveform
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5
H11AV1M, H11AV1AM
REFLOW PROFILE
Max. Ramp−up Rate = 3°C/S
Max. Ramp−down Rate = 6°C/S
TP
TL
260
240
220
200
180
160
140
120
100
80
tP
Tsmax
tL
Preheat Area
Tsmin
ts
60
40
20
0
120
240
360
Time 25°C to Peak
Time (seconds)
Profile Feature
Pb−Free Assembly Profile
150°C
200°C
Temperature Min. (Tsmin)
Temperature Max. (Tsmax)
Time (t S) from (Tsmin to Tsmax)
60–120 seconds
3°C/second max.
217°C
Ramp−up Rate (t L to tP
)
Liquidous Temperature (TL)
Time (t L) Maintained Above (TL)
Peak Body Package Temperature
60–150 seconds
260°C +0°C / –5°C
30 seconds
) within 5°C of 260°C
Time (t P
6°C/second max.
Ramp−down Rate (TP to TL)
Time 25°C to Peak Temperature
8 minutes max.
Figure 12. Reflow Profile
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6
H11AV1M, H11AV1AM
ORDERING INFORMATION
Part Number
†
Package
DIP 6−Pin
Shipping
H11AV1M
50 Units / Tube
50 Units / Tube
1000 / Tape & Reel
50 Units / Tube
50 Units / Tube
H11AV1SM
SMT 6−Pin (Lead Bend)
SMT 6−Pin (Lead Bend)
DIP 6−Pin, DIN EN/IEC60747−5−5 Option
H11AV1SR2M
H11AV1VM
H11AV1SVM
SMT 6−Pin (Lead Bend), DIN
EN/IEC60747−5−5 Option
H11AV1SR2VM
SMT 6−Pin (Lead Bend), DIN
EN/IEC60747−5−5 Option
1000 / Tape & Reel
H11AV1AM
DIP 6−Pin, 0.4” Lead Spacing
50 Units / Tube
50 Units / Tube
H11AV1AVM
DIP 6−Pin, 0.4” Lead Spacing, DIN
EN/IEC60747−5−5 Option
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP6 8.51x6.35, 2.54P
CASE 646BX
ISSUE O
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13449G
PDIP6 8.51X6.35, 2.54P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP6 8.51x6.35, 2.54P
CASE 646BY
ISSUE A
DATE 15 JUL 2019
A
B
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13450G
PDIP6 8.51x6.35, 2.54P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP6 8.51x6.35, 2.54P
CASE 646BZ
ISSUE O
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13451G
PDIP6 8.51X6.35, 2.54P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
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expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
ON Semiconductor Website: www.onsemi.com
◊
www.onsemi.com
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