HCPL062N [ONSEMI]
10MBit/s高性能3.3V双通道光电耦合器;
| 型号： | HCPL062N |
| 厂家： | 
ONSEMI |
| 描述： | 10MBit/s高性能3.3V双通道光电耦合器 光电 |
| 文件： | 总15页 (文件大小：723K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
July 2006
HCPL062N
tm
3.3V Dual Channel High Speed-10 MBit/s Logic Gate
Optocouplers
Features
Description
■ Compact SO8 package
The HCPL062N optocouplers consist of an AlGaAs LED,
optically coupled to a very high speed integrated photo-
detector logic gate consisting of bipolar transistors on a
CMOS process for reduced power consumption. The
output features an open collector, thereby permitting
wired OR outputs. The devices are housed in a compact
small-outline package. The coupled parameters are
guaranteed over the temperature range of -40°C to
+85°C. An internal noise shield and provides superior
common mode rejection.
■ Very high speed – 10MBit/s
■ Superior CMR – 25kV/µs minimum (1,000 volts
common mode)
■ Logic gate output
■ Wired OR-open collector
■ Fixed threshold detector design minimizes thermal
impact on switching times
■ U.L. recognized (File # E90700)
Applications
■ Ground loop elimination
■ Field buses
■ Line receiver, data transmission
■ Data multiplexing
■ Switching power supplies
■ Pulse transformer replacement
■ Computer-peripheral interface
■ Instrumentation input/output isolation
Package Dimensions
0.164 (4.16)
0.144 (3.66)
Pin 1
0.202 (5.13)
0.182 (4.63)
0.019 (0.48)
0.010 (0.25)
0.006 (0.16)
0.143 (3.63)
0.123 (3.13)
0.244 (6.19)
0.224 (5.69)
0.008 (0.20)
0.003 (0.08)
Lead Coplanarity : 0.004 (0.10) MAX
0.021 (0.53)
0.011 (0.28)
0.050 (1.27)
TYP
Note:
All dimensions are in inches (millimeters)
©2006 Fairchild Semiconductor Corporation
HCPL062N Rev. 1.0.0
1
www.fairchildsemi.com
(1)
Circuit Drawing
VCC
+
1
8
VF1
_
V01
2
3
7
6
5
_
V02
VF2
GND
+
4
Note:
1. The V supply to each optoisolator must be bypassed by a 0.1µF capacitor or larger. This can be either a ceramic
CC
or solid tantalum capacitor with good high frequency characteristic and should be connected no further than 3mm
from the V and GND pins of each device.
CC
Truth Table (Positive Logic)
Input
Output
H
L
L
H
A 0.1µF bypass capacitor must be connected between pins 8 and 5.
2
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HCPL062N Rev. 1.0.0
Absolute Maximum Ratings (No derating required up to 85°C)
Symbol
Parameter
Value
Units
°C
T
Storage Temperature
Operating Temperature
-40 to +125
-40 to +85
STG
T
°C
OPR
EMITTER
I
DC/Average Forward Input Current (each channel)
Reverse Input Voltage (each channel)
Power Dissipation
50
5.0
45
mA
V
F
V
R
P
mW
I
DETECTOR
V
Supply Voltage
7.0
V
CC
(1 minute max)
I
Output Current (each channel)
Output Voltage (each channel)
Collector Output Power Dissipation
15
7.0
85
mA
V
O
V
O
P
mW
O
Recommended Operating Conditions
Symbol
Parameter
Min.
Max.
250
15
Units
I
Input Current, Low Level
0
µA
FL
(2)
I
Input Current, High Level
Supply Voltage, Output
Operating Temperature
Fan Out (TTL load)
Output Pull-up
6.3
mA
FH
V
2.7
-40
–
3.3
+85
5
V
CC
T
°C
TTL Loads
Ω
A
N
R
330
4K
L
Note:
2. 6.3mA is a guard banded value which allows for at least 20% CTR degradation. Initial input current threshold value
is 5.0mA or less
3
www.fairchildsemi.com
HCPL062N Rev. 1.0.0
Electrical Characteristics (T = -40°C to +85°C Unless otherwise specified.)
A
Individual Component Characteristics
(3)
Symbol
EMITTER
Parameter
Test Conditions
Min. Typ.
Max.
Unit
V
Input Forward Voltage
I = 10mA
–
–
–
–
–
1.8
1.75
–
V
F
F
T =25°C
A
B
Input Reverse Breakdown
Voltage
I = 10µA
5.0
V
VR
R
∆V /∆T Input Diode Temperature
I = 10mA
–
-1.5
–
mV/°C
F
A
F
Coefficient
DETECTOR
I
High Level Supply Current
Low Level Supply Current
I = 0mA, V = 3.3V
–
–
7.1
6.7
10
15
mA
mA
CCH
F
CC
I
I = 10mA, V = 3.3V
F CC
CCL
Switching Characteristics (T = -40°C to +85°C, V = 3.3V, I = 7.5 mA Unless otherwise specified.)
A
CC
F
(3)
Symbol AC Characteristics
Test Conditions
Min.
Typ.
Max.
Unit
T
Propagation Delay
Time to Output High
Level
R = 350Ω, C = 15pF
–
–
90
ns
PLH
L
L
Note 4, Fig. 10
T
Propagation Delay
Time to Output Low
Level
R = 350Ω, C = 15pF
–
–
75
ns
PHL
L
L
Note 5, Fig. 10
|T
–T
| Pulse Width Distortion R = 350Ω, C = 15pF
–
–
16
4
25
–
ns
ns
PHL PLH
L
L
Fig. 10
t
Output Rise Time
(10–90%)
R = 350Ω, C = 15pF)
–
–
r
L
L
Note 6, Fig. 10
t
Output Fall Time
(90–10%)
R = 350Ω, C = 15pF
–
ns
f
L
L
Note 7, Fig. 10
|CM |
Common Mode
Transient Immunity
R = 350Ω, T = 25°C, I = 0 mA,
25,000
–
–
V/µs
H
L
A
F
V
= 3.3V, V
= 2V
CC
O(Min.)
(at Output High Level) |V | = 1,000V
CM
Notes 8, 11, Fig. 11
|CM |
Common Mode
Transient Immunity
R = 350Ω, T =25°C, I = 7.5mA,
25,000
–
–
V/µs
L
L
A
F
V
= 3.3V, V
= 0.8V
CC
O(Max.)
(at Output Low Level) |V | = 1,000V
CM
Notes 9, 11, Fig. 11
4
www.fairchildsemi.com
HCPL062N Rev. 1.0.0
Transfer Characteristics (T = -40°C to +85°C Unless otherwise specified.)
A
(3)
Symbol
DC Characteristics
Low Level Output Voltage
Input Threshold Current
Test Conditions
Min.
Typ.
Max.
0.6
5
Unit
V
V
V
V
= 3.3V, I = 5mA, I = 13mA
–
–
–
–
OL
FT
CC
F
OL
I
= 3.3V, V = 0.6V, I = 13mA
mA
CC
O
OL
Isolation Characteristics (T = -40°C to +85°C Unless otherwise specified.)
A
(3)
Symbol
Characteristics
Test Conditions
Min.
Typ.
Max.
Unit
I
Input-Output
Relative humidity = 45%
–
–
1.0
µA
I-O
Insulation Leakage Current
T = 25°C, t = 5 sec.
A
V
= 3000 VDC, Note 10
I-O
V
Withstand Insulation Test
Voltage
R < 50%, T = 25°C
2500
–
–
V
RMS
ISO
H
A
I
≤ 2µA, t = 1 min.,
I-O
Note 10
12
R
C
Resistance (Input to Output)
Capacitance (Input to Output)
V
= 500V, Note 10
–
–
10
0.6
–
–
Ω
I-O
I-O
f = 1MHz, Note 10
pF
I-O
Notes:
3. All typical values are at V = 3.3V, T = 25°C unless otherwise specified.
CC
A
4. t
– Propagation delay is measured from the 3.75 mA level on the HIGH to LOW transition of the input current
PLH
pulse to the 1.5V level on the LOW to HIGH transition of the output voltage pulse.
5. t – Propagation delay is measured from the 3.75 mA level on the LOW to HIGH transition of the input current
PHL
pulse to the 1.5V level on the HIGH to LOW transition of the output voltage pulse.
6. t – Rise time is measured from the 90% to the 10% levels on the LOW to HIGH transition of the output pulse.
r
7. t – Fall time is measured from the 10% to the 90% levels on the HIGH to LOW transition of the output pulse.
f
8. CM – The maximum tolerable rate of rise of the common mode voltage to ensure the output will remain in the high
H
state (i.e., V
> 2.0 V). Measured in volts per microsecond (V/µs).
OUT
9. CM – The maximum tolerable rate of fall of the common mode voltage to ensure the output will remain in the low
L
output state (i.e., V
< 0.8 V). Measured in volts per microsecond (V/µs).
OUT
10. Device considered a two-terminal device: Pins 1,2,3 and 4 shorted together, and Pins 5,6,7 and 8 shorted together.
11. The power supply bypass capacitors must be no further than 3mm from the leads of the optocoupler. A low
inductance ground plane width of with ≤ 5nHy of series lead inductance is required.
5
www.fairchildsemi.com
HCPL062N Rev. 1.0.0
Typical Performance Curves
Fig. 2 High Level Output Current vs.
Ambient Temperature
Fig. 1 Forward Current vs. Forward Voltage
100
12
10
8
V
= V = 3.3V
CC
O
I
= 250µA
F
10
T
= 100oC
A
1
0.1
= -40oC
= 0oC
T
= 85oC
6
A
T
A
T
A
4
T
= 25oC
A
0.01
2
0
0.001
-40
-20
0
20
40
60
80
100
0.8
0.9
1.0
V
1.1
1.2
1.3
1.4
1.5
1.6
1.7
– FORWARD VOLTAGE (V)
T
– AMBIENT TEMPERATURE (°C)
F
A
Fig. 4 Input Threshold Current vs.Temperature
Fig. 3 Low Level Output Current vs. Ambient Temperature
40
2.5
V
V
= 3.3V
= 0.6V
CC
V
= 3.3V
= 0.6V
CC
OL
O
V
I
R
= 350Ω, 1kΩ, 4kΩ
L
35
30
25
20
15
10
= 5mA
2.0
1.5
1.0
0.5
0.0
F
-40
-20
0
20
40
60
80
100
-40
-20
0
20
40
60
80
100
T
– AMBIENT TEMPERATURE (°C)
A
T
– AMBIENT TEMPERATURE (°C)
A
6
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HCPL062N Rev. 1.0.0
Typical Performance Curves (Continued)
Fig. 5 Pulse Width Distortion vs. Ambient Temperature
Fig. 6 Propagation Delay vs. Pulse Input Current
30
120
100
80
60
40
20
0
V
= 3.3V
V
R
T
= 3.3V
CC
CC
= 350Ω
I
= 7.5mA
L
F
= 25oC
R
L = 350Ω
A
25
20
15
10
5
t
PLH
t
PHL
0
-40
-20
0
20
40
60
80
100
5
7
I
9
11
13
15
T
– AMBIENT TEMPERATURE (˚C)
– PULSE INPUT CURRENT (mA)
A
F
Fig. 7 Propagation Delay vs. Ambient Temperature
Fig. 8 Rise and Fall Times vs. Ambient Temperature
100
90
80
70
60
50
40
30
20
30
V
= 3.3V
V
= 3.3V
CC
CC
I
= 7.5mA
I
= 7.5mA
F
F
R
L = 350Ω
25
20
15
10
5
R
L = 350Ω
t
t
PLH
r
t
PHL
t
f
0
-40
-20
0
20
40
60
80
100
-40
-20
0
20
T – AMBIENT TEMPERATURE (˚C)
A
40
60
80
100
T
– AMBIENT TEMPERATURE (˚C)
A
7
www.fairchildsemi.com
HCPL062N Rev. 1.0.0
Typical Performance Curves (Continued)
Fig. 9 Low Level Output Voltage vs. Ambient Temperature
0.6
0.5
0.4
0.3
0.2
0.1
0.0
V
= 3.3V
CC
I
I
= 13mA
= 5mA
O
F
-40
-20
0
20
40
60
80
100
T
A
– AMBIENT TEMPERATURE (˚C)
8
www.fairchildsemi.com
HCPL062N Rev. 1.0.0
Test Circuits
Fig. 10 Test Circuit and Waveforms for tPLH, tPHL, tr and tf
≤3mm spacing
Pulse Gen.
IF = 7.5 mA
Z
= 50 Ω
O
t = t = 5 ns
f
r
IF = 3.75 mA
Dual Channel
Input
(IF)
+3.3V
I
F
V
1
2
3
4
8
7
6
5
CC
tPHL
tPLH
R
L
Input
Monitoring
Node
Output V
O
Output
(VO)
Monitoring
Node
1.5 V
0.1µF
Bypass
R
90%
10%
M
C *
L
Output
(VO)
GND
tf
tr
Fig. 11 Test Circuit and Waveforms for Common Mode Transient Immunity
≤3mm spacing
I
F
Dual Channel
V
B
A
+3.3V
1
2
3
4
8
7
6
5
CC
R
L
Output V
Monitoring
Node
O
V
FF
0.1µF
Bypass
GND
V
CM
+
–
Pulse
Generator
O = 50 Ω
Z
VCM
0V
Peak
3.3V
VO
CMH
Switching Pos. (A), IF= 0
VO (Min)
VO (Max)
Switching Pos. (B), IF= 7.5 mA
VO
CML
0.5 V
9
www.fairchildsemi.com
HCPL062N Rev. 1.0.0
Footprint
8-Pin Small Outline
0.024 (0.61)
0.060 (1.52)
0.275 (6.99)
0.155 (3.94)
0.050 (1.27)
10
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HCPL062N Rev. 1.0.0
Ordering Information
Option
Order Entry Identifier
Description
Shipped in tubes (50 units per tube)
Tape and Reel (500 units per reel)
Tape and Reel (2500 units per reel)
No Suffix HCPL062N
R1
R2
HCPL062NR1
HCPL062NR2
Marking Information
1
2
62N
5
X YY S
4
3
Definitions
1
2
3
4
5
Fairchild logo
Device number
One digit year code, e.g., ‘3’
Two digit work week ranging from ‘01’ to ‘53’
Assembly package code
11
www.fairchildsemi.com
HCPL062N Rev. 1.0.0
Carrier Tape Specification
8.0 0.10
2.0 0.05
3.50 0.20
0.30 MAX
Ø1.5 MIN
4.0 0.10
1.75 0.10
5.5 0.05
12.0 0.3
8.3 0.10
5.20 0.20
Ø1.5 0.1/-0
6.40 0.20
0.1 MAX
User Direction of Feed
Reflow Profile
300
280
260
240
220
200
180
260°C
>245°C = 42 Sec
Time above
160
°C
183°C = 90 Sec
140
120
100
80
1.822°C/Sec Ramp up rate
60
40
33 Sec
20
0
0
60
120
180
270
360
Time (s)
12
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HCPL062N Rev. 1.0.0
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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相关型号：
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