HCPL3700VM [ONSEMI]

交流/直流到逻辑接口光耦合器;
HCPL3700VM
型号: HCPL3700VM
厂家: ONSEMI    ONSEMI
描述:

交流/直流到逻辑接口光耦合器

光电
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中文:  中文翻译
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DATA SHEET  
www.onsemi.com  
AC/DC to Logic  
Interface Optocoupler  
8
8
1
HCPL3700M  
1
PDIP8 GW  
CASE 709AC  
PDIP8 9.655x6.6, 2.54P  
CASE 646CQ  
Description  
The HCPL3700M voltage/current threshold detection optocoupler  
consists of an AlGaAs LED connected to a threshold sensing input  
buffer IC which are optically coupled to a high gain darlington output.  
The input buffer chip is capable of controlling threshold levels over  
a wide range of input voltages with a single resistor. The output is  
TTL and CMOS compatible.  
ELECTRICAL CONNECTION  
AC  
1
2
3
4
8
7
6
5
V
CC  
Features  
AC or DC Input  
NC  
DC+  
DC  
AC  
Programmable Sense Voltage  
Logic Level Compatibility  
Threshold Guaranteed Over Temperature (0°C to 70°C)  
Safety and Regulatory Approvals  
V
O
GND  
UL1577, 5,000 VAC  
for 1 Minute  
RMS  
DIN EN/IEC6074755  
These are PbFree Devices  
TRUTH TABLE  
(Positive Logic)  
Applications  
Low Voltage Detection  
Input  
Output  
5 V to 240 V AC/DC Voltage Sensing  
Relay Contact Monitor  
Current Sensing  
Microprocessor Interface  
Industrial Controls  
H
L
L
H
A 0.1 mF bypass capacitor must be connected  
between pins 8 and 5.  
MARKING DIAGRAM  
RX  
AC/DC  
POWER  
3700  
VXXYYB  
HCPL3700M  
LOGIC  
3700  
= Device Number  
V
= DIN EN/IEC6074755 Option  
(only appears on component ordered  
with this option)  
GND 1  
GND 2  
XX  
YY  
B
= TwoDigit Year Code  
= TwoDigit Work Week  
= Assembly Package Code  
Figure 1. Schematic  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 10 of  
this data sheet.  
© Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
March, 2022 Rev. 2  
HCPL3700M/D  
HCPL3700M  
SAFETY AND INSULATION RATINGS (As per DIN EN/IEC 6074755, this optocoupler is suitable for “safe electrical insulation”  
only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.)  
Parameter  
Characteristics  
Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated  
Mains Voltage  
<150 V  
<300 V  
<450 V  
<600 V  
I–IV  
I–IV  
RMS  
RMS  
RMS  
RMS  
I–III  
I–III  
<1000 V  
(Option TV)  
I–III  
RMS  
Climatic Classification  
40/85/21  
2
Pollution Degree (DIN VDE 0110/1.89)  
Comparative Tracking Index  
175  
Symbol  
Parameter  
InputtoOutput Test Voltage, Method A, V x 1.6 = V  
Value  
Unit  
V
PR  
,
2,262  
V
peak  
IORM  
PR  
Type and Sample Test with t = 10 s, Partial Discharge <5 pC  
m
InputtoOutput Test Voltage, Method B, V  
x 1.875 = V  
,
2,651  
V
peak  
IORM  
PR  
100% Production Test with t = 1 s, Partial Discharge <5 pC  
m
V
Maximum Working Insulation Voltage  
Highest Allowable OverVoltage  
External Creepage  
1,414  
6,000  
w8.0  
w7.4  
w10.16  
w0.5  
150  
V
V
IORM  
peak  
V
IOTM  
peak  
mm  
mm  
mm  
mm  
°C  
External Clearance  
External Clearance (for Option TV, 0.4” Lead Spacing)  
Distance Through Insulation (Insulation Thickness)  
Case Temperature (Note 1)  
DTI  
T
S
I
Input Current (Note 1)  
25  
mA  
mW  
W
S,INPUT  
P
Output Power (Duty Factorv2.7%) (Note 1)  
Insulation Resistance at T , V = 500 V (Note 1)  
250  
S,OUTPUT  
9
R
>10  
IO  
S
IO  
1. Safety limit value maximum values allowed in the event of a failure.  
www.onsemi.com  
2
 
HCPL3700M  
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified.)  
A
Symbol  
Parameter  
Value  
Units  
°C  
T
Storage Temperature  
Operating Temperature  
Junction Temperature  
Lead Solder Temperature  
40 to +125  
40 to +85  
40 to +125  
260 for 10 s  
305  
STG  
OPR  
T
°C  
T
J
°C  
T
SOL  
°C  
P
T
Total Package Power Dissipation (Note 2)  
mW  
EMITTER  
I
IN  
Input Current  
Average  
50  
mA  
Surge, 3 ms, 120 Hz Pulse Rate  
Transient, 10 ms, 120 Hz Pulse Rate  
140  
500  
0.5  
230  
V
P
Input Voltage (Pins 23)  
V
IN  
Input Power Dissipation (Note 3)  
mW  
IN  
DETECTOR  
I
Output Current (Average) (Note 4)  
Supply Voltage (Pins 85)  
30  
mA  
V
O
V
CC  
0.5 to 20  
0.5 to 20  
210  
V
Output Voltage (Pins 65)  
V
O
P
Output Power Dissipation (Note 5)  
mW  
O
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
2. Derate linearly above 70°C freeair temperature at a rate of 2.5 mW/°C.  
3. Derate linearly above 70°C freeair temperature at a rate of 1.8 mW/°C.  
4. Derate linearly above 70°C freeair temperature at a rate of 0.6 mA/°C.  
5. Derate linearly above 70°C freeair temperature at a rate of 1.9 mW/°C.  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
Parameter  
Min  
2
Max  
18  
70  
4
Unit  
V
V
CC  
Supply Voltage  
T
A
Ambient Operating Temperature  
Operating Frequency  
0
°C  
f
0
kHz  
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond  
the Recommended Operating Ranges limits may affect device reliability.  
www.onsemi.com  
3
 
HCPL3700M  
ELECTRICAL CHARACTERISTICS (T = 0°C to 70°C unless otherwise specified)  
A
Symbol  
Parameter  
Input Threshold Current  
Test Conditions  
= V V = 4.5 V  
TH+, CC  
Min.  
1.96  
1.00  
3.35  
Typ.  
2.40  
1.20  
3.80  
Max.  
3.11  
1.62  
4.05  
Unit  
I
I
V
V
mA  
TH+  
IN  
= 0.4 V, I w4.2 mA (Note 6)  
TH−  
O
O
V
V
V
V
Input Threshold Voltage  
DC (Pins 2, 3)  
AC (Pins 1, 4)  
V
V
I
= V V (Pins 1 & 4 Open)  
V
V
V
V
TH+  
TH−  
TH+  
TH−  
HYS  
IN  
2
3
= 4.5 V, V = 0.4 V (Note 6)  
CC  
O
w4.2 mA  
O
V
V
I
= V V (Pins 1 & 4 Open)  
2.01  
4.23  
2.87  
2.50  
5.00  
3.70  
2.86  
5.50  
4.20  
IN  
2
3
= 4.5 V, V = 2.4 V (Note 6)  
CC  
O
w100 mA  
O
lV = V V l (Pins 2 & 3 Open)  
IN  
1
4
V
I
= 4.5 V, V = 0.4 V (Note 6)  
CC  
O
w4.2 mA  
O
lV = lV V l (Pins 2 & 3 Open)  
IN  
1
4
V
I
= 4.5 V, V = 2.4 V (Note 6)  
CC  
O
v100 mA  
O
I
Hysteresis  
I
= I  
TH+  
I  
TH−  
1.2  
1.3  
6.3  
mA  
V
HYS  
V
HYS  
V
V
= V V  
TH+ TH−  
HYS  
V
IHC1  
Input Clamp Voltage  
= V V , V = GND  
5.4  
6.6  
V
IHC1  
2
3
3
I
IN  
= 10 mA  
Pins 1 & 4 Connected to PIN 3  
V
V
V
= lV V l, lI l = 10 mA  
6.1  
7.0  
7.3  
V
V
IHC2  
IHC2  
1
4
IN  
(Pins 2 & 3 Open)  
V
IN  
= V V , V = GND  
12.5  
13.4  
IHC3  
IHC3  
2
3
3
I
= 15 mA  
(Pins 1 & 4 Open)  
V
ILC  
V
IN  
= V V , V = GND  
0.75  
V
ILC  
2
3
3
I
= 10 mA  
I
IN  
Input Current  
V
= V V = 5.0 V  
3.0  
3.7  
4.4  
mA  
IN  
2
3
(Pins 1 & 4 Open)  
V
V
Bridge Diode Forward Voltage  
I
I
= 3 mA  
= 3 mA  
0.65  
0.65  
0.04  
V
V
D1,2  
IN  
IN  
D3,4  
V
Logic LOW Output Voltage  
Logic HIGH Output Current  
Logic LOW Supply Current  
V
V
= 4.5 V, I = 4.2 mA (Note 6)  
0.4  
100  
4
V
OL  
CC  
OH  
OL  
I
= V = 18 V (Note 6)  
mA  
mA  
OH  
CC  
I
V
V
V = 5.0 V V = Open  
1.0  
CCL  
2
3
O
= 5 V  
CC  
I
Logic HIGH Supply Current  
Input Capacitance  
V
= 18 V, V = Open  
0.01  
50  
4
mA  
CCH  
CC  
O
C
f = 1 mHz, V = 0 V  
(Pins 2 & 3, Pins 1 & 4 Open)  
pF  
IN  
IN  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
6. Logic LOW output level at pin 6 occurs when V wV  
and when V uV  
once V exceeds V  
.
IN  
TH+  
TH−  
IN  
TH−  
TH+  
IN  
TH+  
Logic HIGH output level at pin 6 occurs when V vV  
and when V tV  
once decreases below V  
.
IN  
IN  
TH−  
www.onsemi.com  
4
 
HCPL3700M  
SWITCHING CHARACTERISTICS (T = 25°C, V = 5 V unless otherwise specified)  
A
CC  
Symbol  
Parameter  
Test Conditions  
R = 4.7 kW, C = 30 pF (Note 7)  
Min.  
Typ.  
Max.  
Units  
t
Propagation Delay Time  
(to Output Low Level)  
6.0  
15  
ms  
PHL  
L
L
t
Propagation Delay Time  
(to Output High Level)  
R = 4.7 kW, C = 30 pF (Note 7)  
25.0  
40  
ms  
PLH  
L
L
t
Output Rise Time (10%90%)  
Output Fall Time (90%10%)  
R = 4.7 kW, C = 30 pF  
45  
0.5  
ms  
ms  
R
L
L
t
R = 4.7 kW, C = 30 pF  
F
L
L
lCM l  
Common Mode Transient  
Immunity (at Output High Level)  
I
= 0 mA, R = 4.7 kW,  
4000  
V/ms  
H
IN  
L
V
= 2.0 V, V  
= 1400 V (Notes 8, 9)  
Omin  
CM  
lCM l  
Common Mode Transient  
Immunity (at Output Low Level)  
I
= 3.11 mA, R = 4.7 kW,  
600  
V/ms  
L
IN  
L
V
= 0.8 V, V  
= 1400 V (Notes 8, 9)  
Omax  
CM  
ISOLATION CHARACTERISTICS (T = 25°C unless otherwise specified)  
A
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Units  
V
ISO  
Withstand Isolation Voltage  
RH50%, I 10 mA,  
5,000  
VAC  
RMS  
IO  
t = 1 min, f = 50 Hz (Note 10, 11)  
12  
R
C
Resistance (Input to Output)  
Capacitance (Input to Output)  
V
= 500 V (Note 10)  
10  
W
IO  
IO  
IO  
DC  
f = 1 MHz, V = 0 V  
0.6  
pF  
IO  
DC  
7. T  
propagation delay is measured from the 2.5 V level of the leading edge of a 5.0 V input pulse (1 ms rise time) to the 1.5 V level on the  
PHL  
leading edge of the output pulse. T  
propagation delay is measured on the trailing edges of the input and output pulse. (Refer to Fig. 10)  
PLH  
8. Common mode transient immunity in logic high level is the maximum tolerable (positive) dV /dt on the leading edge of the common mode  
cm  
pulse signal V , to assure that the output will remain in a logic high state (i.e., V u2.0 V). Common mode transient immunity in logic low  
CM  
O
level is the maximum tolerable (negative) dV /dt on the trailing edge of the common mode pulse signal, V , to assure that the output will  
cm  
CM  
remain in a logic low state (i.e., V t0.8 V). Refer to Fig. 11.  
O
9. In applications where dV /dt may exceed 50,000 V/ms (Such as static discharge), a series resistor, R , should be included to protect the  
cm  
CC  
detector chip from destructive surge currents. The recommended value for R is 240 V per volt of allowable drop in V (between pin 8  
CC  
CC  
and V ) with a minimum value of 240 W.  
CC  
10.Device is considered a two terminal device: Pins 1, 2, 3 and 4 are shorted together and Pins 5, 6, 7 and 8 are shorted together.  
11. The 5000 VAC /1 min. capability is validated by a 6000 VAC /1 sec. dielectric voltage withstand test.  
RMS  
RMS  
www.onsemi.com  
5
 
HCPL3700M  
TYPICAL PERFORMANCE CURVES  
50  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
DC (Pins 1,2 Shorted Together  
Pins 3,4 Shorted Together)  
40  
30  
20  
10  
0
DC (Pins 1 & 4 Open)  
AC (Pins 2 & 3 Open)  
10  
4
6
8
10  
12  
14  
16  
18  
20  
0
2
4
6
8
10  
12  
14  
V
CC,  
OPERATING SUPPLY VOLTAGE (V)  
V
IN,  
INPUT VOLTAGE (V)  
Figure 2. Logic Low Supply Current vs.  
Operating Supply Voltage  
Figure 3. Input Current vs. Input Voltage  
4.2  
4.0  
3.8  
3.6  
3.4  
3.2  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
120  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.2  
4.2  
4.0  
3.8  
3.6  
3.4  
3.2  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
V
I
TH+  
I
V
IN  
TH+  
= 5.0 V  
IN  
(Pins 2 & 3)  
V
TH−  
V
V
OL  
I
TH−  
= 5.0 V  
CC  
= 4.2 mA  
I
OL  
40  
20  
0
20  
40  
60  
80  
100  
40  
20  
0
20  
T TEMPERATURE (°C)  
A,  
40  
60  
80  
100  
T
A,  
TEMPERATURE (°C)  
Figure 4. Input Current/Low Level Output Voltage  
vs. Temperature  
Figure 5. Current Threshold/Voltage Threshold vs.  
Temperature  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
30  
25  
20  
t
t
F
t
PLH  
15  
10  
5
R
t
PHL  
0
40  
20  
0
20  
40  
60  
80  
100  
40  
20  
0
20  
T TEMPERATURE (°C)  
A,  
40  
60  
80  
100  
T
TEMPERATURE (°C)  
A,  
Figure 6. Propagation Delay vs. Temperature  
Figure 7. Rise and Fall Time vs. Temperature  
www.onsemi.com  
6
HCPL3700M  
TYPICAL PERFORMANCE CURVES (continued)  
300  
250  
100  
10  
1
V
V
= 18 V  
= Open  
= 0 A  
CC  
O
I
IN  
V+ (AC)  
200  
V+ (DC)  
V(AC)  
V(DC)  
150  
100  
50  
0.1  
40  
0
20  
0
20  
40  
60  
80  
100  
0
40  
80  
120  
160  
200  
240  
T
A,  
TEMPERATURE (°C)  
R
EXTERNAL SERIES RESISTOR (kW)  
X,  
Figure 8. Logic High Supply Current vs. Temperature  
Figure 9. External Threshold Characteristics V+/V  
vs. Rx  
www.onsemi.com  
7
HCPL3700M  
TEST CIRCUITS  
+5 V  
5 V  
2.5 V  
0 V  
Input  
(V  
)
AC  
V
CC  
1
2
3
4
8
7
6
5
IN  
Pulse  
Generator  
tr = 5 ns  
0.1 mF  
bypass  
t
t
PLH  
PHL  
R
L
DC+  
DC−  
AC  
V
O
Output  
(V )  
O
Vo  
Output  
(V )  
O
90%  
10%  
90%  
Z
O
= 50 W  
C
L
1.5 V  
GND  
10%  
V
OL  
t
F
t
R
V
IN  
Pulse Amplitude = 50 V  
Pulse Width = 1 ms  
f = 100 Hz  
T = T = 1.0 ms (10% 90%)  
r
f
Figure 10. Switching Test Circuit  
1400 V  
I
IN  
R
CC  
*
+5 V  
AC  
V
CC  
1
2
3
4
8
7
6
5
A
B
0.1 mF  
bypass  
R
DC+  
DC−  
AC  
L
V
0 V  
V
CM  
Output  
(V )  
O
Vo  
V
FF  
GND  
V
O
OH  
C **  
L
Switching Pos. (A)  
= 0 mA  
I
IN  
V
CM  
+
V
O
(Min)  
* SEE NOTE 8  
Pulse Gen  
V
O
(Max)  
** C IS 30 pF, WHICH INCLUDES PROBE  
L
AND STRAY WIRING CAPACITANCE  
Switching Pos. (B)  
= 3.11 mA  
I
IN  
V
O
V
OL  
Figure 11. Test Circuit for Common Mode Transient Immunity and Typical Waveforms  
www.onsemi.com  
8
HCPL3700M  
REFLOW PROFILE  
Max. Rampup Rate = 3°C/s  
Max. Rampdown Rate = 6°C/s  
T
P
260  
240  
220  
200  
180  
160  
140  
120  
100  
80  
t
P
T
L
Tsmax  
t
L
Preheat Area  
Tsmin  
t
S
60  
40  
20  
0
120  
240  
360  
Time 25°C to Peak  
Time (s)  
Profile Freature  
PbFree Assembly Profile  
150°C  
Temperature Minimum (Tsmin)  
Temperature Maximum (Tsmax)  
200°C  
Time (t ) from (Tsmin to Tsmax)  
60 to 120 s  
S
Rampup Rate (t to t )  
3°C/s maximum  
217°C  
L
P
Liquidous Temperature (T )  
L
Time (t ) Maintained Above (T )  
60 to 150 s  
L
L
Peak Body Package Temperature  
Time (t ) within 5°C of 260°C  
260°C +0°C/5°C  
30 s  
P
Rampdown Rate (T to T )  
6°C/s maximum  
8 minutes maximum  
P
L
Time 25°C to Peak Temperature  
Figure 12. Reflow Profile  
www.onsemi.com  
9
HCPL3700M  
ORDERING INFORMATION  
Part Number  
Package  
DIP 8Pin  
Packing Method  
50 Units / Tube  
50 Units / Tube  
HCPL3700M  
HCPL3700SM  
SMT 8Pin (Lead Bend)  
HCPL3700SDM  
HCPL3700VM  
SMT 8Pin (Lead Bend)  
1000 / Tape & Reel  
50 Units / Tube  
DIP 8Pin, DIN EN/IEC6074755 option  
SMT 8Pin (Lead Bend), DIN EN/IEC 6074755 option  
SMT 8Pin (Lead Bend), DIN EN/IEC 6074755 option  
HCPL3700SVM  
HCPL3700SDVM  
50 Units / Tube  
1000 / Tape & Reel  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
www.onsemi.com  
10  
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
PDIP8 9.655x6.6, 2.54P  
CASE 646CQ  
ISSUE O  
DATE 18 SEP 2017  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON13446G  
PDIP8 9.655X6.6, 2.54P  
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MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
PDIP8 GW  
CASE 709AC  
ISSUE O  
DATE 31 JUL 2016  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON13447G  
PDIP8 GW  
PAGE 1 OF 1  
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