HGTD7N60C3S9A [ONSEMI]
14A，600V，UFS 系列 N 沟道 IGBT;
| 型号： | HGTD7N60C3S9A |
| 厂家： | 
ONSEMI |
| 描述： | 14A，600V，UFS 系列 N 沟道 IGBT 栅 瞄准线 双极性晶体管 功率控制 |
| 文件： | 总10页 (文件大小：285K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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HGTD7N60C3S, HGTP7N60C3
Data Sheet
December 2001
14A, 600V, UFS Series N-Channel IGBTs
Features
o
The HGTD7N60C3S and HGTP7N60C3 are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors.These devices have the
high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower
• 14A, 600V at T = 25 C
C
• 600V Switching SOA Capability
o
• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at T = 150 C
J
• Short Circuit Rating
• Low Conduction Loss
o
on-state voltage drop varies only moderately between 25 C
o
and 150 C.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays and
contactors.
Packaging
JEDEC TO-220AB
EMITTER
COLLECTOR
GATE
Formerly Developmental Type TA49115.
Ordering Information
COLLECTOR (FLANGE)
PART NUMBER
HGTD7N60C3S
HGTP7N60C3
PACKAGE
TO-252AA
TO-220AB
BRAND
G7N60C
G7N60C3
JEDEC TO-252AA
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in tape and reel, i.e.
HGTD7N60C3S9A.
COLLECTOR
(FLANGE)
GATE
EMITTER
Symbol
C
G
E
©2001 Fairchild Semiconductor Corporation
HGTD7N60C3S, HGTP7N60C3 Rev. B
HGTD7N60C3S, HGTP7N60C3
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified
C
HGTD7N60C3S HGTP7N60C3
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
600
V
CES
Collector Current Continuous
o
At T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
14
A
A
A
V
V
C25
o
At T = 110 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
7
C
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
56
CM
GES
GEM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
20
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
o
30
Switching Safe Operating Area at T = 150 C, Figure 14 . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
J
40A at 480V
o
Power Dissipation Total at T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
C
60
0.48
100
W
D
o
o
Power Dissipation Derating T > 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
W/ C
C
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
mJ
ARV
STG
o
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T
-40 to 150
260
C
J
o
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
C
L
SC
SC
Short Circuit Withstand Time (Note 2) at V
Short Circuit Withstand Time (Note 2) at V
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
1
µs
µs
GE
GE
8
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
o
2. V
CE(PK)
= 360V, T = 125 C, R = 50Ω.
J G
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
-
MAX
-
UNITS
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
BV
BV
I
I
= 250µA, V
GE
= 0V
600
V
V
CES
ECS
C
= 3mA, V
GE
= 0V
16
30
-
-
C
o
I
V
V
= BV
T
T
T
T
T
= 25 C
-
250
2.0
2.0
2.4
6.0
µA
mA
V
CES
CE
CE
CES
CES
C
C
C
C
C
o
= BV
= 150 C
-
-
-
o
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
V
I
V
= I
,
= 25 C
1.6
1.9
5.0
CE(SAT)
C C110
= 15V
GE
o
= 150 C
-
V
o
V
I
= 250µA,
= 25 C
3.0
V
GE(TH)
C
V
= V
=
CE
GE
GE
Gate to Emitter Leakage Current
Switching SOA
I
V
25V
o
-
-
-
-
250
nA
A
GES
SSOA
T = 150 C
V
V
= 480V
40
6
-
-
J
CE(PK)
R
= 50Ω
= 15V
G
= 600V
A
V
CE(PK)
GE
L = 1mH
Gate to Emitter Plateau Voltage
On-State Gate Charge
V
I
I
= I
, V
C110 CE
= 0.5 BV
CES
-
-
-
8
-
V
GEP
C
Q
= I
,
V
V
= 15V
23
30
30
38
nC
nC
G(ON)
C
C110
= 0.5 BV
GE
GE
V
CE
CES
= 20V
©2001 Fairchild Semiconductor Corporation
HGTD7N60C3S, HGTP7N60C3 Rev. B
HGTD7N60C3S, HGTP7N60C3
o
Electrical Specifications
PARAMETER
T = 25 C, Unless Otherwise Specified (Continued)
C
SYMBOL
TEST CONDITIONS
MIN
TYP
8.5
MAX
UNITS
ns
o
Current Turn-On Delay Time
Current Rise Time
t
T = 150 C
-
-
-
-
-
-
-
-
-
d(ON)I
J
I
= I
CE
C110
t
11.5
350
140
165
600
-
ns
rI
d(OFF)I
V
V
= 0.8 BV
CES
CE(PK)
= 15V
GE
R = 50Ω
Current Turn-Off Delay Time
Current Fall Time
t
400
275
-
ns
G
L = 1.0mH
t
ns
fI
Turn-On Energy
E
µJ
ON
Turn-Off Energy (Note 3)
Thermal Resistance
NOTE:
E
-
µJ
OFF
o
R
2.1
C/W
θJC
3. Turn-Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
OFF
at the point where the collector current equals zero (I
= 0A). The HGTD7N60C3S and HGTP7N60C3 were tested per JEDEC standard No.
CE
24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-
On losses include diode losses.
Typical Performance Curves
40
35
30
25
20
15
40
35
DUTY CYCLE <0.5%, V
CE
PULSE DURATION = 250µs
= 10V
PULSE DURATION = 25µ0s,
12.0V
DUTY CYCLE <0.5%,
o
T
= 25 C
C
30
25
10.0V
V
= 15.0V
GE
o
T
= 150 C
C
20
15
10
o
9.0V
8.5V
T
= 25 C
o
C
T
= -40 C
C
10
8.0V
7.5V
7.0V
5
0
5
0
0
2
4
6
8
10
4
6
8
10
12
14
V
, GATE TO EMITTER VOLTAGE (V)
V
, COLLECTOR TO EMITTER VOLTAGE (V)
GE
CE
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
40
35
40
35
PULSE DURATION = 250µs
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, V
= 15V
GE
DUTY CYCLE <0.5%, V
= 10V
GE
o
o
T
= 25 C
T
= -40 C
C
C
30
25
20
15
10
5
30
25
20
15
10
o
T
= -40 C
C
o
T
= 150 C
C
o
T
= 150 C
C
o
T
= 25 C
C
5
0
0
0
1
2
3
4
5
0
1
2
3
4
5
V
, COLLECTOR TO EMITTER VOLTAGE (V)
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
CE
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
©2001 Fairchild Semiconductor Corporation
HGTD7N60C3S, HGTP7N60C3 Rev. B
HGTD7N60C3S, HGTP7N60C3
Typical Performance Curves (Continued)
15
12
12
10
8
140
120
100
80
o
V
= 15V
GE
V
= 360V, R = 50Ω, T = 125 C
G J
CE
I
SC
9
6
3
0
6
4
60
t
SC
40
15
2
10
25
50
75
100
125
150
11
12
13
14
o
T
, CASE TEMPERATURE ( C)
V
, GATE TO EMITTER VOLTAGE (V)
C
GE
FIGURE 5. MAXIMUM DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
50
500
450
o
o
= 150 C, R = 50Ω, L = 1mH, V = 480V
CE(PK)
T
= 150 C, R = 50Ω, L = 1mH, V
= 480V
T
J
G
CE(PK)
J
G
40
30
400
350
20
10
5
V
= 10V
GE
V
= 10V OR 15V
GE
300
250
V
= 15V
GE
200
2
5
8
11
14
17
20
2
5
8
11
14
17
20
I
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
CE
FIGURE 7. TURN-ON DELAYTIME vs COLLECTORTO
EMITTER CURRENT
FIGURE 8. TURN-OFF DELAYTIME vs COLLECTORTO
EMITTER CURRENT
200
o
300
o
T
= 150 C, R = 50Ω, L = 1mH, V
= 480V
T
= 150 C, R = 50Ω, L = 1mH, V
= 480V
J
G
CE(PK)
J
G
CE(PK)
250
200
100
V
= 10V
GE
V
= 10V or 15V
GE
150
100
V
= 15V
GE
10
5
2
5
8
11
14
17
20
2
5
8
11
14
17
20
I
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
CE
FIGURE 9. TURN-ON RISETIME vs COLLECTORTO
EMITTER CURRENT
FIGURE 10. TURN-OFF FALLTIME vs COLLECTORTO
EMITTER CURRENT
©2001 Fairchild Semiconductor Corporation
HGTD7N60C3S, HGTP7N60C3 Rev. B
HGTD7N60C3S, HGTP7N60C3
Typical Performance Curves (Continued)
2000
1000
3000
o
T
= 150 C, R = 50Ω, L = 1mH, V = 480V
CE(PK)
o
J
G
T
= 150 C, R = 50Ω, L = 1mH, V = 480V
CE(PK)
J
G
V
= 10V
GE
1000
500
500
V
= 15V
GE
V
= 10V or 15V
GE
100
40
100
2
5
8
11
14
17
20
2
5
8
11
14
17
20
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTORTO
EMITTER CURRENT
FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTORTO
EMITTER CURRENT
200
50
o
o
o
= 150 C, V
T
= 150 C,T = 75 C
C
T
= 15V, R = 50Ω, L = 1mH
G
J
J
GE
R
= 50Ω, L = 1mH
100
G
40
30
V
= 15V
V
= 10V
GE
GE
f
= 0.05/(t
D(OFF)I
+ t
D(ON)I
+ E
OFF
)
)
MAX1
10
20
10
0
f
= (P - P )/(E
ON
MAX2
D
C
P
= ALLOWABLE DISSIPATION
D
P
= CONDUCTION DISSIPATION
C
(DUTY FACTOR = 50%)
o
R
= 2.1 C/W
θJC
1
0
100
200
300
400
500
600
2
10
20
30
I
, COLLECTOR TO EMITTER CURRENT (A)
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
CE(PK)
FIGURE 13. OPERATING FREQUENCY vs COLLECTORTO
EMITTER CURRENT
FIGURE 14. MINIMUM SWITCHING SAFE OPERATING AREA
o
1200
I
= 1.044mA, R = 50Ω, T = 25 C
G(REF)
L
C
FREQUENCY = 1MHz
600
500
400
300
200
15
1000
800
C
IES
12.5
V
= 600V
CE
10
7.5
5
600
400
V
= 400V
20
CE
V
= 200V
200
0
CE
2.5
0
100
0
C
OES
C
RES
0
5
10
15
20
25
0
5
10
15
25
30
V
, COLLECTOR TO EMITTER VOLTAGE (V)
Q
, GATE CHARGE (nC)
CE
G
FIGURE 15. CAPACITANCE vs COLLECTORTO EMITTER
VOLTAGE
FIGURE 16. GATE CHARGE WAVEFORMS
©2001 Fairchild Semiconductor Corporation
HGTD7N60C3S, HGTP7N60C3 Rev. B
HGTD7N60C3S, HGTP7N60C3
Typical Performance Curves (Continued)
0
10
0.5
0.2
0.1
-1
10
0.05
0.02
0.01
t
1
P
D
DUTY FACTOR, D = t / t
1
2
t
2
SINGLE PULSE
-5
PEAK T = (P X Z
X R
) + T
JC C
J
D
JC
θ
θ
-2
10
-4
10
-2
10
-1
-3
10
1
0
10
10
10
10
t , RECTANGULAR PULSE DURATION (s)
1
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
Test Circuit and Waveform
L = 1mH
90%
OFF
RHRD660
10%
V
GE
E
E
ON
R
= 50Ω
G
V
CE
CE
+
90%
V
= 480V
DD
-
10%
d(OFF)I
I
t
t
rI
t
fI
t
d(ON)I
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 19. SWITCHING TEST WAVEFORMS
©2001 Fairchild Semiconductor Corporation
HGTD7N60C3S, HGTP7N60C3 Rev. B
HGTD7N60C3S, HGTP7N60C3
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
Figure 13 is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I ) plots are possible using
CE
the information shown for a typical unit in Figures 4, 7, 8, 11
and 12. The operating frequency plot (Figure 13) of a typical
device shows f
MAX1
or f whichever is smaller at each
MAX2
point.The information is based on measurements of a typical
device and is bounded by the maximum rated junction
temperature.
f
is defined by f
MAX1
= 0.05/(t
D(OFF)I
+ t ).
D(ON)I
MAX1
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD LD26” or equivalent.
are possible. t
D(OFF)I
and t are defined in Figure 19.
D(ON)I
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T . t
is important when controlling output ripple under a lightly
loaded condition.
JM D(OFF)I
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
f
is defined by f
MAX2
= (P - P )/(E
OFF
+ E ). The
ON
MAX2
D
C
3. Tips of soldering irons should be grounded.
allowable dissipation (P ) is defined by P = (T - T )/R
The sum of device switching and conduction losses must
.
D
D
JM θJC
C
4. Devices should never be inserted into or removed from
circuits with power on.
not exceed P . A 50% duty factor was used (Figure 13) and
D
the conduction losses (P ) are approximated by
C
5. GateVoltage Rating - Never exceed the gate-voltage
P
= (V
x I )/2. E
and E
are defined in the
rating of V
. Exceeding the rated V can result in
C
CE
CE
ON
OFF
GEM
GE
permanent damage to the oxide layer in the gate region.
switching waveforms shown in Figure 19. E
is the
ON
integral of the instantaneous power loss (I
x V ) during
6. GateTermination - The gates of these devices are
essentially capacitors. Circuits that leave the gate open-
circuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
CE
CE
turn-on and E
is the integral of the instantaneous power
OFF
loss (I
x V ) during turn-off. All tail losses are included
CE
CE
in the calculation for E
; i.e. the collector current equals
OFF
zero (I
= 0).
CE
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
©2001 Fairchild Semiconductor Corporation
HGTD7N60C3S, HGTP7N60C3 Rev. B
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â
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DenseTrench™
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