HGTG11N120CND [ONSEMI]
1200 V NPT IGBT;
| 型号： | HGTG11N120CND |
| 厂家： | 
ONSEMI |
| 描述： | 1200 V NPT IGBT 局域网 瞄准线 双极性晶体管 功率控制 |
| 文件： | 总10页 (文件大小：437K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPT Series N-Channel IGBT
with Anti-Parallel Hyperfast
Diode
43 A, 1200 V
HGTG11N120CND
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The HGTG11N120CND is a Non− Punch Through (NPT) IGBT
design. This is a new member of the MOS gated high voltage
switching IGBT family. IGBTs combine the best features
of MOSFETs and bipolar transistors. This device has the high input
impedance of a MOSFET and the low on−state conduction loss
of a bipolar transistor. The IGBT used is the development type
TA49291. The Diode used is the development type TA49189.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses are
essential, such as: AC and DC motor controls, power supplies
and drivers for solenoids, relays and contactors.
Formerly Developmental Type TA49303.
Features
°
• 43 A, 1200 V, T = 25 C
C
• 1200 V Switching SOA Capability
°
• Typical Fall Time: 340 ns at T = 150 C
TO−247−3LD
CASE 340CK
J
• Short Circuit Rating
• Low Conduction Loss
• Thermal Impedance SPICE Model
MARKING DIAGRAMS
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• This is Pb−Free Device
$Y&Z&3&K
11N120CND
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
11N120CND = Specific Device Code
ORDERING INFORMATION
Part Number
Package
Brand
HGTG11N120CND
TO−247
11N120CND
NOTE: When ordering, use the entire part number.
© Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
December, 2020 − Rev. 2
HGTG11N120CND/D
HGTG11N120CND
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless Otherwise Specified)
C
Description
Collector to Emitter Voltage
Collector Current Continuous
At T = 25°C
Symbol
BV
HGTG11N120CND
Units
1200
V
CES
I
43
22
A
A
C25
C
I
C110
At T = 110°C
C
Collector Current Pulsed (Note 1)
Gate to Emitter Voltage Continuous
Gate to Emitter Voltage Pulsed
I
80
A
V
V
CM
V
GES
GEM
20
30
V
Switching Safe Operating Area at T = 150°C (Figure 2)
SSOA
55 A at 1200 V
J
Power Dissipation Total at TC = 25°C
Power Dissipation Derating TC > 25°C
P
D
298
2.38
W
W/°C
Operating and Storage Junction Temperature Range
Maximum Lead Temperature for Soldering
T , T
−55 to 150
°C
°C
ms
ms
J
STG
T
L
260
8
Short Circuit Withstand Time (Note 2) at V = 15 V
t
GE
SC
SC
Short Circuit Withstand Time (Note 2) at V = 12 V
t
15
GE
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Pulse width limited by maximum junction temperature.
2. V
= 840 V, T = 125°C, R = 10 Ω.
CE(PK)
J G
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2
HGTG11N120CND
ELECTRICAL SPECIFICATIONS (T = 25, °C Unless Otherwise Specified)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Collector to Emitter Breakdown
Voltage
BV
I
C
= 250 mA, V = 0 V
1200
−
−
V
CES
GE
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
I
V
= 1200 V
−
−
−
300
−
250
−
mA
mA
mA
V
T
T
T
T
T
= 25°C
CES
CE
C
C
C
C
C
= 125°C
= 150°C
= 25°C
−
3.5
2.4
3.5
−
V
I
= 11 A,
= 15 V
−
2.1
2.9
6.8
−
CE(SAT)
C
GE
V
= 150°C
−
V
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
V
I
C
= 90 mA, V = V
GE
6.0
−
V
GE(TH)
CE
I
V
GE
=
20 V
250
−
nA
A
GES
SSOA
T = 150°C, R = 10 Ω, V = 15 V,
55
−
J
G
GE
L = 400 mH, V
= 1200 V
CE(PK)
Gate to Emitter Plateau Voltage
V
I
I
= 11 A, V = 600 V
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
10.4
100
130
23
−
V
nC
nC
ns
GEP
C
CE
On−State Gate Charge
Q
= 11 A,
= 600 V
V
= 15 V
= 20 V
120
150
26
G(ON)
C
V
GE
GE
CE
V
Current Turn−On Delay Time
Current Rise Time
t
IGBT and Diode at T = 25°C,
J
d(ON)I
I
= 11 A,
CE
t
rI
12
16
ns
V
V
R
= 960 V,
= 15 V,
CE
Current Turn−Off Delay Time
Current Fall Time
t
180
190
0.95
1.3
21
240
220
1.3
1.6
24
ns
d(OFF)I
GE
= 10 Ω,
t
fI
ns
G
L = 2 mH,
Test Circuit (Figure 20)
Turn−On Energy
E
mJ
mJ
ns
ON
Turn−Off Energy (Note 3)
Current Turn−On Delay Time
Current Rise Time
E
OFF
t
IGBT and Diode at T = 150°C,
J
d(ON)I
I
= 11 A,
CE
t
rI
12
16
ns
V
V
R
= 960 V,
= 15 V,
CE
Current Turn−Off Delay Time
Current Fall Time
t
210
360
1.9
2.1
2.6
60
280
400
2.5
2.5
3.2
70
ns
d(OFF)I
GE
= 10 Ω,
t
fI
ns
G
L = 2 mH,
Test Circuit (Figure 20)
Turn−On Energy
E
mJ
mJ
V
ON
Turn−Off Energy (Note 3)
Diode Forward Voltage
Diode Reverse Recovery Time
E
OFF
V
I
I
I
= 11 A
EC
EC
EC
EC
t
rr
ns
= 11 A, dl /dt = 200 A/ms
EC
= 1 A, dl /dt = 200 A/ms
32
40
ns
EC
Thermal Resistance Junction To Case
R
IGBT
−
0.42
1.25
°C/W
°C/W
θ
JC
Diode
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Turn−Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
OFF
ending at the point where the collector current equals zero (I = 0 A). All devices were tested per JEDEC Standard No. 24−1 Method for
CE
Measurement of Power Device Turn−Off Switching Loss. This test method produces the true total Turn−Off Energy Loss.
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3
HGTG11N120CND
TYPICAL PERFORMANCE CHARACTERISTICS
45
40
35
30
25
20
15
10
5
60
V
= 15 V
GE
50
40
30
20
T
J
= 1505C, R = 10 W, V = 15 V, L = 400 mH
G
G
10
0
0
25
50
75
100
125
150
0
200
V
400
600
800
1000
1200
1400
, COLLECTOR TO EMITTER VOLTAGE (V)
T , CASE TEMPERATURE (5C)
CE
C
Figure 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
Figure 2. MINIMUM SWITCHING SAFE
OPERATING AREA
25
250
200
150
200
100
50
T
= 1505C, R = 10 W, L = 2 mH, V = 960 V
J
G
CE
V
= 840 V, R = 10 W, T = 1255C
CE
G
J
T
C
= 755C, V = 15 V, IDEAL DIODE
GE
20
15
10
5
t
SC
I
SC
f
f
P
= 0.05 / (t
+ t )
d(ON)I
MAX1
d(OFF)I
= (P − P )/(E
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
= 0.42 C/W, SEE NOTES
5
T
V
C
GE
15 V
100
50
+ E )
o
MAX2
D
C
ON
OFF
75 C
o
o
o
10
5
75 C 12 V
C
110 C 15 V
o
12 V
110 C
R
qJC
12
13
14
15
16
2
10
20
ICE, COLLECTOR TO EMITTER CURRENT (A)
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 4. SHORT CIRCUIT WITHSTAND TIME
Figure 3. OPERATING FREQUENCY vs COLLECTOR
TO EMITTER CURRENT
50
50
T
C
= 255C
T
= 255C
C
40
30
20
40
30
20
10
0
T
C
= −555C
T
C
= −555C
T
C
=1505C
T
C
= 1505C
10
0
= 15 V
DUTY CYCLE < 0.5%, V
GE
DUTY CYCLE < 0.5%, V = 12 V
GE
PULSE DURATION = 250
PULSE DURATION = 250ms
ms
0
2
4
6
8
0
2
4
68
V , COLLECTOR TO EMITTER VOLTAGE (V)
CE
V , COLLECTOR TO EMITTER VOLTAGE (V)
CE
Figure 6. COLLECTOR TO EMITTER ON−STATE
Figure 5. COLLECTOR TO EMITTER ON−STATE
VOLTAGE
VOLTAGE
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4
HGTG11N120CND
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
3.5
5
4
3
2
1
0
R
= 10 W, L = 2 mH, V = 960 V
CE
G
R
= 10 W, L = 2 mH, V = 960 V
G
CE
3.0
2.5
2.0
1.5
1.0
0.5
0
T
= 1505C, V = 12 V, V = 15 V
J
GE
GE
T
J
= 1505C, V = 12 V OR 15 V
GE
T
J
= 255C, V = 12 V OR 15 V
GE
T
J
= 255C, V = 12 V, V = 15 V
GE
GE
0
5
10
15
20
0
5
10
15
20
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
Figure 7. TURN−ON ENERGY LOSS vs
Figure 8. TURN−OFF ENERGY LOSS vs
COLLECTOR TO EMITTER CURRENT
COLLECTOR TO EMITTER CURRENT
50
40
30
20
10
0
40
35
30
25
20
15
R
T
= 10 W, L = 2 mH, V = 960 V
G
CE
R
G
= 10 W, L = 2 mH, V = 960 V
CE
= 255C, T = 1505C, V = 12 V
J
J
GE
T
J
= 255C, T = 1505C, V = 12 V
J
GE
T
J
= 255C OR T = 1505C, V = 15 V
J
GE
T
J
= 255C, T = 1505C, V = 15 V
J
GE
0
5
10
15
20
0
5
10
15
20
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
Figure 9. TURN−ON DELAY TIME vs COLLECTOR
Figure 10. TURN−ON RISE TIME vs COLLECTOR
TO EMITTER CURRENT
TO EMITTER CURRENT
500
450
400
350
300
250
200
150
100
700
600
500
400
300
R
= 10 W, L = 2 mH, V = 960 V
G
CE
R
= 10 W, L = 2 mH, V = 960 V
CE
G
V
= 12 V, V = 15 V, T = 1505C
GE
GE
J
T
J
= 1505C, V = 12 V OR 15V
GE
200
100
T
J
= 255C, V = 12 V OR 15 V
GE
V
GE
= 12 V, V = 15 V, T = 255C,
GE
J
10
0
5
15
20
0
5
10
15
20
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
Figure 11. TURN−OFF DELAY TIME vs COLLECTOR
Figure 12. FALL TIME vs COLLECTOR TO
EMITTER CURRENT
TO EMITTER CURRENT
+
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5
HGTG11N120CND
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
100
80
60
40
20
0
20
DUTY CYCLE < 0.5%, V = 20 V
PULSE DURATION = 250 ms
I
= 1 mA, R = 54.5 W, T = 255C
CE
G(REF)
L
C
15
10
5
V
CE
= 800 V
V
CE
= 1200 V
T
C
= 255C
V
CE
= 400 V
T
C
= 1505C
T
C
= −555C
0
7
8
9
10
11
12
13
14
15
0
20
40
60
80
120
100
VGE, GATE TO EMITTER VOLTAGE (A)
QG, GATE CHARGE (nC)
Figure 14. GATE CHARGE WAVEFORMS
Figure 13. TRANSFER CHARACTERISTIC
4
3
2
1
0
15
12
9
FREQUENCY = 1 MHz
DUTY CYCLE < 0.5%, T = 1105C
C
PULSE DURATION = 250 ms
V
GE
= 15 V
CIES
V
GE
= 10 V
6
3
0
COES
CRES
0
5
10
15
20
25
4
1
0
2
3
VCE, COLECTOR TO EMITTER VOLTAGE (V)
VCE, COLECTOR TO EMITTER VOLTAGE (V)
Figure 16. COLLECTOR TO EMITTER ON−STATE
Figure 15. CAPACITANCE vs COLLECTOR TO
EMITTER VOLTAGE
VOLTAGE
0
10
0.5
0.2
t
1
0.1
P
D
−1
10
0.05
t
2
0.02
DUTY CYCLE, D = t /t
1
0.01
2
PEAK T = (P x Z
x R ) + T
q
JC
q
J
D
JC
C
SINGLE PULSE
−2
10
−5
−4
−3
10
−2
10
−1
0
10
10
10
10
t1, RECTANGULAR PULSE DURATION (s)
Figure 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
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6
HGTG11N120CND
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
70
T
J
= 255C, dI /dt = 200 A/ms
EC
100
60
50
40
30
20
10
t
rr
1505C
10
t
a
255C
−555C
t
b
1
1
3
4
5
6
2
1
2
5
10
20
VF, FORWARD VOLTAGE (V)
I , FORWARD CURRENT (A)
F
Figure 19. RECOVERY TIMES vs FORWARD
CURRENT
Figure 18. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
TEST CIRCUITS AND WAVEFORMS
HGTG11N120CND
10 W
Figure 21. SWITCHING TEST WAVEFORMS
Figure 20. Inductive Switching Test Circuit
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7
HGTG11N120CND
HANDLING PRECAUTIONS FOR IGBTS
OPERATING FREQUENCY INFORMATION
Insulated Gate Bipolar Transistors are susceptible
to gate−insulation damage by the electrostatic discharge
of energy through the devices. When handling these devices,
care should be exercised to assure that the static charge built
in the handler’s body capacitance is not discharged through
the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers
in military, industrial and consumer applications, with
virtually no damage problems due to electrostatic discharge.
IGBTs can be handled safely if the following basic
precautions are taken:
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information s11hown for a typical unit in Figures 5, 6, 7,
8, 9 and 11. The operating frequency plot (Figure 3)
of a typical device shows fMAX1 or fMAX2; whichever is
smaller at each point. The information is based on
measurements of a typical device and is bounded by
the maximum rated junction temperature.
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I + td(ON)I).
Deadtime (the denominator) has been arbitrarily held
to 10% of the on−state time for a 50% duty factor. Other
definitions are possible. td(OFF)I and td(ON)I are defined in
Figure 21. Device turn−off delay can establish an additional
frequency limiting condition for an application other than
TJM. td(OFF)I is important when controlling output ripple
under a lightly loaded condition.
1. Prior to assembly into a circuit, all leads should be
kept shorted together either by the use of metal
shorting springs or by the insertion into conductive
material such as “ECCOSORBD™ LD26” or
equivalent
2. When devices are removed by hand from their
carriers, the hand being used should be grounded
by any suitable means − for example, with a
metallic wristband
fMAX2 is defined by fMAX2 = (PD − PC)/(EOFF + EON).
The allowable dissipation (PD) is defined by
PD = (TJM − TC)/RθJC
. The sum of device switching
3. Tips of soldering irons should be grounded
4. Devices should never be inserted into or removed
from circuits with power on
and conduction losses must not exceed PD. A 50% duty
factor was used (Figure 3) and the conduction losses (PC) are
approximated by
5. Gate Voltage Rating − Never exceed the
PC + (VCE ICE)ń2
(eq. 1)
gate−voltage rating of VGEM. Exceeding the rated
EON and EOFF are defined in the switching waveforms
shown in Figure 21. EON is the integral of the instantaneous
power loss (ICE× VCE) during turn−on and EOFF is the integral
of the instantaneous power loss (ICE × VCE) during turn−off.
All tail losses are included in the calculation for EOFF; i.e.,
the collector current equals zero (ICE = 0).
VGE can result in permanent damage to the oxide
layer in the gate region
6. Gate Termination − The gates of these devices are
essentially capacitors. Circuits that leave the gate
open− circuited or floating should be avoided.
These conditions can result in turn−on of the
device due to voltage buildup on the input
capacitor due to leakage currents or pickup
7. Gate Protection − These devices do not have an
internal monolithic Zener diode from gate to
emitter. If gate protection is required an external
Zener is recommended
All brand names and product names appearing in this document are registered trademarks or trademarks of their respective holders.
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
PAGE 1 OF 1
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相关型号：
HGTG11N120CND_NL
Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, TO-247
FAIRCHILD
HGTG12N60A4D_NL
Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-247
FAIRCHILD
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