HGTG18N120BN [ONSEMI]
1200 V NPT IGBT;
| 型号： | HGTG18N120BN |
| 厂家： | 
ONSEMI |
| 描述： | 1200 V NPT IGBT 局域网 电动机控制 栅 瞄准线 双极性晶体管 |
| 文件： | 总10页 (文件大小：410K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT - NPT
1200 V
HGTG18N120BN
Description
HGTG18N120BN is based on Non− Punch Through (NPT) IGBT
designs. The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low conduction
losses are essential, such as: UPS, solar inverter, motor control and
power supplies.
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C
Features
• 26 A, 1200 V, T = 110°C
C
• Low Saturation Voltage: V (sat) = 2.45 V @ I = 18 A
CE
C
G
• Typical Fall Time . . . . . . . . . . . . . 140 ns at T = 150°C
J
• Short Circuit Rating
• Low Conduction Loss
• This Device is Pb−Free
E
E
C
G
TO−247−3LD
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
G18N120BN
$Y
= ON Semiconductor Logo
&Z
&3
&K
= Assembly Plant Code
= Numeric Date Code
= Lot Code
G18N120BN
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
February, 2020 − Rev. 3
HGTG18N120BN/D
HGTG18N120BN
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Symbol
Description
Ratings
Unit
V
BV
I
Collector to Emitter Voltage
Collector Current Continuous
1200
CES
C
T
C
T
C
T
C
= 25°C
= 110°C
= 25°C
54
A
26
A
I
Collector Current Pulsed (Note 1)
Gate to Emitter Voltage Continuous
Gate to Emitter Voltage Pulsed
160
A
CM
V
20
V
GES
GEM
V
30
V
SSOA
Switching Safe Operating Area at T = 150°C (Figure 2)
100 A at 1200 V
J
P
Power Dissipation Total
T
= 25°C
> 25°C
390
W
W/°C
mJ
°C
D
C
C
Power Dissipation Derating
T
3.12
E
AV
Forward Voltage Avalanche Energy (Note 2)
125
T
T
Operating and Storage Junction Temperature Range
Maximum Lead Temp. for Soldering
−55 to +150
J, STG
T
260
8
°C
L
T
SC
Short Circuit Withstand Time (Note 3)
Short Circuit Withstand Time (Note 3)
V
V
= 15 V
= 12 V
ꢀ
s
GE
GE
15
ꢀ
s
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Pulse width limited by maximum junction temperature.
2. I = 25 A, L = 40 ꢀ H, T = 25°C
CE
CE(PK)
J
3. V
= 960 V, T = 125°C, R = 3 ꢁ
J G
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Mark
Package
Packing Method
Shipping
HGTG18N120BN
G18N120BN
TO−247
Tube
450/Tube
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
= 250 ꢀ A, V = 0 V
Min.
1200
15
Typ.
−
Max.
Unit
V
BV
BV
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
I
I
−
−
CES
ECS
C
GE
= 10 mA, V = 0 V
−
V
C
GE
ꢀ A
ꢀ A
mA
V
I
Collector to Emitter Leakage Current
V
V
V
I
= 1200 V, T = 25°C
−
−
−
−
−
300
−
250
−
CES
CE
GE
GE
C
= 1200 V, T = 125°C
C
= 1200 V, T = 150°C
4
C
Collector to Emitter Saturation Voltage
= 18 A, V = 15 V,
2.45
2.7
V
C
GE
CE(SAT)
T
= 25°C
C
I
= 18 A, V = 15 V,
C
−
3.8
4.2
V
C
GE
T
= 150°C
V
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
I
= 150 ꢀ A, V = V
GE
6.0
−
7.0
−
V
nA
A
GE(th)
C
CE
I
V
=
20 V
−
250
−
GES
GE
T = 150°C, R = 3 ꢁ ꢂ
V
V
SSOA
Switching SOA
100
J
G
= 15 V, L = 200 ꢀ H,
CE(PK)
GE
= 1200 V
V
Gate to Emitter Plateau Voltage
I
= 18 A, V = 600 V
−
−
10.5
165
−
V
GEP
C
CE
I
C
= 18 A, V = 600 V,
Q
On−State Gate Charge
200
nC
CE
G(ON)
V
= 15 V
GE
I
= 18 A, V = 600 V,
GE
−
220
250
nC
C
CE
V
= 20 V
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2
HGTG18N120BN
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted) (continued)
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
IGBT and Diode at T = 25°C
T
Current Turn−On Delay Time
Current Rise Time
J
−
−
−
−
−
−
−
23
17
28
22
ns
ns
d(on)I
I
= 18 A
CE
T
rI
V
V
= 960 V
CE
GE
= 15 V
T
Current Turn−Off Delay Time
Current Fall Time
170
90
200
140
1.0
2.4
2.2
ns
d(off)I
R
= 3 ꢁ
G
L = 1 mH
T
fI
ns
Test Circuit (Figure18)
E
Turn−On Energy (Note 6)
Turn−On Energy (Note 6)
Turn−Off Energy (Note 4)
0.8
1.9
1.8
mJ
mJ
mJ
on1
on2
E
E
off
IGBT and Diode at T = 150°C
T
Current Turn−On Delay Time
Current Rise Time
J
−
−
−
−
−
−
−
−
21
17
26
22
ns
ns
d(on)l
I
= 18 A
CE
T
rl
V
V
= 960 V
CE
GE
= 15 V
T
d(off)I
Current Turn−Off Delay Time
Current Fall Time
205
140
0.85
3.7
2.6
−
240
200
1.1
4.9
3.1
0.32
ns
R
= 3 ꢁ
G
L = 1 mH
T
fl
ns
Test Circuit (Figure 18)
E
Turn−On Energy (Note 6)
Turn−On Energy (Note 6)
Turn−Off Energy (Note 5)
Thermal Resistance Junction To Case
mJ
mJ
mJ
°C/W
on1
on2
E
E
off
R
ꢃ
JC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. V
= 960 V, T = 125°C, R = 3 ꢁ
CE(PK)
J
G
5. Turn−Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
OFF
ending at the point where the collector current equals zero (I = 0 A). All devices were tested per JEDEC Standard No. 24−1 Method for
CE
Measurement of Power Device Turn− Off Switching Loss. This test method produces the true total Turn−Off Energy Loss.
6. Values for two Turn−On loss conditions are shown for the convenience of the circuit designer. E
is the turn−on loss of the IGBT only. E
ON1
ON2
is the turn−on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified
in Figure 18.
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3
HGTG18N120BN
TYPICAL PERFORMANCE CURVES
60
50
40
30
20
10
0
120
T
J
= 1505C , R = 3 W, V = 15 V, L = 200 mH
GE
V
= 15V
G
GE
100
80
60
40
20
0
0
200
400
600
800
1000
1200
1400
25
50
75
100
125
150
T
C,
Case Temperature (5C)
V
CE,
Collector to Emitter Voltage (V)
Figure 1. DC Collector Current
vs. Case Temperature
Figure 2. Minimum Switching Safe
Operating Area
30
25
20
15
10
5
300
o
o
V
= 960V, R = 3 W, T = 125 C
T
= 150 C, R = 3 W, L = 1mH, V = 960V
CE
G
J
J
G
CE
o
T
= 75 C, V
= 15V, IDEAL DIODE
GE
C
250
200
150
100
50
100
50
I
SC
SC
10
1
t
f
= 0.05 / (t
= (P − P ) / (E
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
+ t )
d(ON)I
MAX1
d(OFF)I
T
V
C
GE
15V
f
+ E
)
MAX2
D
C
ON
OFF
o
75 C
P
o
o
o
C
75 C 12V
110 C 15V
o
R
= 0.32 C/W, SEE NOTES
10
jJC
110 C 12V
12
13
14
15
16
5
20
30
40
V
GE,
Gate to Emitter Voltage (V)
I
, Collector to Emitter Current (A)
CE
Figure 3. Operating Frequency
vs. Collector to Emitter Current
Figure 4. Short Circuit Withstand Time
80
100
o
o
T
C
= −55 C
T
C
= 25 C
80
60
40
60
40
20
0
o
o
T
= 25 C
T
= 150 C
C
C
o
T
= −55 C
C
o
T
= 150 C
C
20
0
DUTY CYCLE < 0.5%, V
GE
PULSE DURATION = 250 ms
= 15V
DUTY CYCLE < 0.5%, V
PULSE DURATION = 250 ms
= 12V
GE
0
2
4
6
8
10
0
2
4
6
8
10
V
Collector to Emitter Voltage (V)
CE,
V
CE,
Collector to Emitter Voltage (V)
Figure 5. Collector to Emitter
Figure 6. Collector to Emitter
On−State Voltage
On−State Voltage
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4
HGTG18N120BN
TYPICAL PERFORMANCE CURVES (Continued)
12
10
8
4.5
R
= 3 W, L = 1mH, V = 960V
R
= 3 W, L = 1mH, V
G CE
= 960V
G
CE
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
o
T
= 150 C, V
= 12V, V = 15V
GE
J
GE
o
T
= 150 C, V
GE
= 12V OR 15V
J
6
o
4
T
= 25 C, V
= 12V OR 15V
GE
J
2
o
T
= 25 C, V
= 12V, V = 15V
GE
J
GE
0
5
10
15
20
25
30
35
40
20
5
10
15
25
30
35
40
I , Collector to Emitter Current (A)
CE
I
, Collector to Emitter Current (A)
CE
Figure 8. Turn−off Energy Loss vs.
Figure 7. Turn−on Energy Loss vs.
Collector to Emitter Current
Collector to Emitter Current
120
40
35
30
25
20
15
R
= 3 W, L = 1mH, V
= 960V
o
G
CE
R
= 3 W, L = 1mH, V
= 960V
CE
G
100
80
60
40
20
0
o
o
o
T
= 25 C, T = 150 C, V
J
= 12V
GE
T
= 25 C, T = 150 C, V
= 12V
J
J
J
GE
o
o
o
o
T
= 25 C OR T = 150 C, V
= 15V
T
= 25 C, T = 150 C, V
= 15V
35 40
J
J
GE
J
J
GE
5
10
15
20
25
30
35
40
5
10
15
25
30
20
I
Collector to Emitter Current (A)
CE,
I
Collector to Emitter Current (A)
CE,
Figure 9. Turn−on Delay Time vs.
Figure 10. Turn−on Rise Time vs.
Collector to Emitter Current
Collector to Emitter Current
250
225
200
175
150
125
100
75
350
300
250
200
150
100
R
= 3 W, L = 1mH, V
= 960V
CE
G
V
= 3 W, L = 1mH,
CE
= 960V
R
G
o
V
= 12V, V = 15V, T = 150 C
GE J
GE
o
= 150 C, V
T
= 12V OR 15V
GE
J
o
T
= 25 C, V
= 12V OR 15V
J
GE
50
25
o
V
= 12V, V = 15V, T = 25 C
GE J
GE
5
10
15
20
25
30
35
40
25
5
10
15
20
30
35
40
I
Collector to Emitter Current (A)
CE,
I
Collector to Emitter Current (A)
CE,
Figure 11. Turn−off Delay Time vs.
Figure 12. Fall Time vs. Collector to
Emitter Current
Collector to Emitter Current
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5
HGTG18N120BN
TYPICAL PERFORMANCE CURVES (Continued)
200
150
100
50
20
o
DUTY CYCLE < 0.5%, V
= 20V
I
= 2mA, R = 33.3 W, T = 25
C
CE
PULSE DURATION = 250 ms
G(REF)
L
C
15
10
5
V
= 800V
V
= 1200V
CE
CE
o
T
= 25 C
C
V
= 400V
CE
o
T
= 150 C
o
C
T
= −55 C
C
0
0
6
8
9
10 11
12 13
14
15
7
0
50
100
150
200
Q , Gate Charge (nC)
G
V
GE,
Gate to Emitter Voltage (V)
Figure 13. Transfer Characteristics
Figure 14. Gate Charge Waveforms
30
o
6
5
4
3
2
1
0
C
DUTY CYCLE < 0.5%, T = 110
C
FREQUENCY = 1MHz
PULSE DURATION = 250 ms
25
20
15
10
5
V
= 15V OR 12V
GE
C
IES
V
= 10V
GE
C
OES
C
0
RES
0
1
2
3
4
5
V
CE
, Collector to Emitter Voltage (V)
V
CE
, Collector to Emitter Voltage (V)
Figure 15. Capacitance vs. Collector to
Emitter Voltage
Figure 16. Collector to Emitter
On−State Voltage
0
10
0.5
0.2
0.1
−1
10
0.05
0.02
0.01
t
1
P
D
DUTY FACTOR, D = t / t
1
qJC
2
PEAK T = (P X Z
X R ) + T
t
J
D
qJC C
2
SINGLE PULSE
−2
−5
10
10
−4
10
−3
10
−2
10
−1
10
0
10
t , Rectangular Pulse Duration (s)
1
Figure 17. Normalized Transient Thermal Response, Junction to Case
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6
HGTG18N120BN
TEST CIRCUITS AND WAVEFORMS
HGTG18N120BN
90%
OFF
10%
ON
V
V
GE
E
E
CE
L = 1mH
90%
R
= 3 W
G
+
10%
d(OFF)I
I
CE
V
= 960V
DD
t
t
−
rI
t
fI
t
d(ON)I
Figure 18. Inductive Switching Test Circuits
Figure 19. Switching Test Waveforms
HANDLING PRECAUTIONS FOR IGBTs
Insulated Gate Bipolar Transistors are susceptible
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed
from circuits with power on.
to gate−insulation damage by the electrostatic discharge
of energy through the devices. When handling these
devices, care should be exercised to assure that the static
charge built in the handler’s body capacitance is not
discharged through the device. With proper handling
and application procedures, however, IGBTs are currently
being extensively used in production by numerous
equipment manufacturers in military, industrial
and consumer applications, with virtually no damage
problems due to electrostatic discharge. IGBTs can be
handled safely if the following basic precautions are taken:
5. Gate Voltage Rating
−
Never exceed
Exceeding
the gate−voltage rating of
V
.
GEM
the rated V can result in permanent damage to
GE
the oxide layer in the gate region.
6. Gate Termination − The gates of these devices are
essentially capacitors. Circuits that leave the gate
open−circuited or floating should be avoided. These
conditions can result in turn on of the device due to
voltage buildup on the input capacitor due to leakage
currents or pickup.
7. Gate Protection − These devices do not have
an internal monolithic Zener diode from gate to
emitter. If gate protection is required an external
Zener is recommended.
1. Prior to assembly into a circuit, all leads should be
kept shorted together either by the use of metal
shorting springs or by the insertion into conductive
material such as “ECCOSORBDt LD26”
or equivalent.
2. When devices are removed by hand from their
carriers, the hand being used should be grounded by
any suitable means − for example, with a metallic
wristband.
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7
HGTG18N120BN
OPERATING FREQUENCY INFORMATION
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
f
is defined by f
= (P − P )/(E
+ E ).
OFF ON
MAX2
MAX2
D
C
The allowable dissipation (P ) is defined by
P = (T − T )/R . The sum of device switching
D
D
JM
C
ꢃ JC
frequency vs collector current (I ) plots are possible
and conduction losses must not exceed P . A 50% duty
CE
D
using the information shown for
in Figures 5, 6, 7, 8, 9 and 11. The operating frequency
plot (Figure 3) of a typical device shows f or f
a
typical unit
factor was used (Figure 3) and the conduction losses (P )
C
are approximated by P = (V x I )/2.
C
CE
CE
;
E
and E
are defined in the switching waveforms
MAX1
MAX2
ON
OFF
whichever is smaller at each point. The information is
based on measurements of a typical device and is bounded
by the maximum rated junction temperature.
shown in Figure 19.
the instantaneous power loss (I x V ) during turn−on
E
is the integral of
ON
CE
CE
and E
is the integral of the instantaneous power loss
OFF
f
1 is defined by f
= 0.05/(t
+ t
).
(I x V ) during turn−off. All tail losses are included in
CE CE
MAX
MAX1
d(OFF)I d(ON)I
Deadtime (the denominator) has been arbitrarily held to
the calculation for E
; i.e., the collector current equals
OFF
10% of the on−state time for a 50% duty factor. Other
zero (I = 0).
CE
definitions are possible. t
and t
are defined
d(OFF)I
d(ON)I
in Figure 19. Device turn−off delay can establish
an additional frequency limiting condition for
an application other than T . t
is important when
JM d(OFF)I
controlling output ripple under a lightly loaded condition.
All other brand names and product names appearing in this document are registered trademarks or trademarks of their respective holders.
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
PAGE 1 OF 1
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相关型号：
HGTG18N120BND_NL
Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel, TO-247
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HGTG18N120BN_NL
Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel, TO-247
FAIRCHILD
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