HGTG7N60A4D [ONSEMI]
600V, SMPS IGBT;
| 型号： | HGTG7N60A4D |
| 厂家： | 
ONSEMI |
| 描述： | 600V, SMPS IGBT 局域网 栅 瞄准线 双极性晶体管 功率控制 |
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| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
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SMPS Series N-Channel
IGBT with Anti-Parallel
Hyperfast Diode
600 V
HGTG7N60A4D,
HGTP7N60A4D,
HGT1S7N60A4DS
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The HGTG7N60A4D, HGTP7N60A4D and HGT1S7N60A4DS
are MOS gated high voltage switching devices combining the best
features of MOSFETs and bipolar transistors. These devices have the
high input impedance of a MOSFET and the low on−state conduction
loss of a bipolar transistor. The much lower on−state voltage drop
varies only moderately between 25°C and 150°C. The IGBT used is
the development type TA49331. The diode used in anti−parallel is the
development type TA49370.
This IGBT is ideal for many high voltage switching applications
operating at high frequencies where low conduction losses are
essential. This device has been optimized for high frequency switch
mode power supplies.
TO−247−3LD
CASE 340CK
TO−220−3LD
CASE 340AT
Formerly Developmental Type TA49333.
Features
• >100 kHz Operation at 390 V, 7 A
• 200 kHz Operation at 390 V, 5 A
• 600 V Switching SOA Capability
D2PAK−3
CASE 418AJ
• Typical Fall Time: 75 ns at T = 125°C
J
MARKING DIAGRAMS
• Low Conduction Loss
• Temperature Compensating SABER™ Model www.onsemi.com
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
$Y&Z&3&K
G7N60A4D
$Y&Z&3&K
G7N60A4D
$Y&Z&3&K
G7N60A4D
&Y
&Z
&3
= ON Semiconductor Logo
= Assembly Plant Code
= 3−Digit Date Code
&K
G7N60A4D
= 2−Digit Lot Traceability Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
May, 2020 − Rev. 2
HGTG7N60A4D/D
HGTG7N60A4D, HGTP7N60A4D,
ORDERING INFORMATION
PART NUMBER
PACKAGE
TO−247
BRAND
HGTG7N60A4D
G7N60A4D
G7N60A4D
G7N60A4D
HGTP7N60A4D
TO−220AB
TO−263AB
HGT1S7N60A4DS
NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO−263AB variant in tape and reel, e.g.,
HGT1S7N60A4DS9A.
PACKAGING
Figure 1.
ABSOLUTE MAXIMUM RATINGS T = 25°C Unless Otherwise Specified
C
Description
Collector to Emitter Voltage
Collector Current Continuous
At T = 25°C
Symbol
BV
All Types
Units
600
V
CES
I
34
14
A
A
C
C25
At T = 110°C
I
C110
C
Collector Current Pulsed (Note 1)
Gate to Emitter Voltage Continuous
Gate to Emitter Voltage Pulsed
I
56
A
V
V
CM
V
GES
GEM
20
30
V
Switching Safe Operating Area at T = 150°C (Figure 1)
SSOA
35 A at 600 V
J
Power Dissipation Total at TC = 25°C
Power Dissipation Derating TC > 25°C
P
D
125
1.0
W
W/°C
Operating and Storage Junction Temperature Range
Maximum Lead Temperature for Soldering
Leads at 0.063 in (1.6 mm) from case for 10 s
Package Body for 10 s, see Tech Brief 334
T , T
−55 to 150
°C
J
STG
T
L
300
260
T
PKG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Pulse width limited by maximum junction temperature.
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2
HGTG7N60A4D, HGTP7N60A4D,
ELECTRICAL SPECIFICATIONS T = 25 °C Unless Otherwise Specified
J
PARAMETER
SYMBOL
TEST CONDITIONS
I = 250 mA, V = 0 V
C
MIN
600
−
TYP
−
MAX
−
UNITS
V
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
BV
I
CES
GE
V
CE
= 600 V
−
250
2
mA
mA
V
T
C
T
C
T
C
T
C
= 25°C
= 125°C
= 25°C
= 150°C
CES
−
−
Collector to Emitter Saturation Voltage
V
I
= 7 A,
GE
−
1.9
1.6
5.9
−
2.7
2.2
7
CE(SAT)
C
V
= 15 V
−
V
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
V
I
= 250 mA, V = 600 V
4.5
−
V
GE(TH)
C
CE
I
V
=
20 V
250
−
nA
A
GES
GE
SSOA
T = 150°C, R = 25 Ω, V = 15 V,
L = 100 mH, V = 600 V
35
−
J
G
CE
GE
Gate to Emitter Plateau Voltage
V
I
I
= 7 A, V = 300 V
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
9
37
48
11
−
45
60
−
V
nC
nC
ns
GEP
C
CE
On−State Gate Charge
Q
= 7 A,
= 300 V
V
= 15 V
= 20 V
G(ON)
C
V
GE
GE
CE
V
Current Turn−On Delay Time
Current Rise Time
t
IGBT and Diode at T = 25°C,
J
d(ON)I
I
= 7 A,
CE
t
rI
11
−
ns
V
V
R
= 390 V,
= 15 V,
CE
Current Turn−Off Delay Time
Current Fall Time
t
100
45
55
120
60
10
7
−
ns
d(OFF)I
GE
= 25 Ω,
t
fI
−
ns
G
L = 1 mH,
Test Circuit (Figure 24)
Turn−On Energy
E
E
E
−
mJ
ON1
ON2
OFF
Turn−On Energy
150
75
−
mJ
Turn−Off Energy (Note 3)
Current Turn−On Delay Time
Current Rise Time
mJ
t
IGBT and Diode at T = 150°C,
ns
d(ON)I
J
I
= 7 A,
CE
t
rI
−
ns
V
V
R
= 390 V,
= 15 V,
CE
Current Turn−Off Delay Time
Current Fall Time
t
130
75
50
200
125
2.4
34
22
−
150
85
−
ns
d(OFF)I
GE
= 25 Ω,
t
fI
ns
G
L = 1 mH,
Test Circuit (Figure 24)
Turn−On Energy
E
E
E
mJ
ON1
ON2
OFF
Turn−On Energy
215
170
−
mJ
Turn−Off Energy (Note 3)
Diode Forward Voltage
Diode Reverse Recovery Time
mJ
V
I
I
I
= 7 A
V
EC
EC
EC
EC
t
rr
−
ns
= 7 A, dl /dt = 200 A/ms
EC
= 1 A, dl /dt = 200 A/ms
−
ns
EC
Thermal Resistance Junction To Case
R
IGBT
1.0
2.2
°C/W
°C/W
θ
JC
Diode
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Values for two Turn−On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn−on loss of the IGBT only. EON2
is the turn−on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified
in Figure 24.
3. Turn−Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0 A). All devices were tested per JEDEC Standard No. 24−1 Method for
Measurement of Power Device Turn−Off Switching Loss. This test method produces the true total Turn−Off Energy Loss.
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3
HGTG7N60A4D, HGTP7N60A4D,
TYPICAL PERFORMANCE CURVES
40
35
30
25
20
15
10
5
TJ = 1505C, RG = 25 W, VGE = 15 V, L = 100 mH
V
= 15V
GE
30
20
10
0
0
25
50
75
100
125
150
0
10
0
100
200
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
300
400
500
600
700
o
T
, CASE TEMPERATURE ( C)
V
C
Figure 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
Figure 2. MINIMUM SWITCHING SAFE
OPERATING AREA
16
140
120
100
80
500
T
V
GE
C
o
V
CE
= 390 V, RG = 25 W, TJ = 1255C
75 C 15V
14
12
10
8
I
SC
200
100
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
RjJC = 1.05C/W, SEE NOTES
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
60
t
6
4
40
20
SC
fMAX2 = (PD − PC) / (EON2 + EOFF)
TJ = 1255C, RG = 25 W, L = 1 mH, VCE = 390 V
CE
30
11
12
13
14
15
1
5
10
20
V
, GATE TO EMITTER VOLTAGE (V)
GE
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
Figure 3. OPERATING FREQUENCY vs
COLLECTOR TO EMITTER CURRENT
Figure 4. SHORT CIRCUIT WITHSTAND TIME
30
25
20
15
10
5
30
25
20
15
10
5
DUTY CYCLE < 0.5%, VGE = 15 V
PULSE DURATION = 250 ms
DUTY CYCLE < 0.5%, VGE = 12 V
PULSE DURATION = 250 ms
o
T
= 125 C
J
o
T
= 125
o
C
J
o
T
= 25 C
J
o
T
= 150
1.0
C
J
o
T
= 150 C
T = 25 C
J
J
0
0
0
0.5
1.5
2.0
2.5
3.0
0.5
1.0
1.5
2.0
2.5
3.0
V
, COLLECTOR TO EMITTER VOLTAGE (V)
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
CE
Figure 5. COLLECTOR TO EMITTER ON−STATE
Figure 6. COLLECTOR TO EMITTER ON−STATE
VOLTAGE
VOLTAGE
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4
HGTG7N60A4D, HGTP7N60A4D,
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
350
500
400
300
200
100
0
R
= 25W, L = 1mH, V
= 390V
CE
R
= 25 W, L = 1mH, V = 390V
G
G
CE
300
250
200
150
100
50
o
T
= 125 C, V
= 12V, V = 15V
GE
J
GE
o
T
J
= 125 C, V
GE
o
T
= 25 C, V
= 12V, V
10
= 15V
o
J
GE
GE
T
= 25 C, V = 12V OR 15V
GE
J
0
0
2
4
6
8
12
14
0
4
2
6
8
10
12
14
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
Figure 7. TURN−ON ENERGY LOSS vs COLLECTOR
Figure 8. TURN−OFF ENERGY LOSS vs
TO EMITTER CURRENT
COLLECTOR TO EMITTER CURRENT
40
30
20
10
0
16
R
= 25 W, L = 1mH, V = 390V
G
CE
R
= 25 W , L = 1mH, V = 390V
G
CE
o
T
J
= 25 C, V = 12V
GE
o
T
J
= 25 C, V = 12V, V
= 15V
GE
GE
14
o
T
= 125 C, V = 12V
GE
J
o
12
10
8
T
= 25 C, V = 15V
GE
J
o
T
= 125 C, V = 15V
J
GE
o
T
= 125 C, V = 12V, V = 15V
J
GE
GE
0
4
0
4
2
I
6
8
10
12
14
2
6
8
10
12
14
I
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
Figure 9. TURN−ON DELAY TIME vs COLLECTOR
Figure 10. TURN−ON RISE TIME vs COLLECTOR
TO EMITTER CURRENT
TO EMITTER CURRENT
180
160
140
120
100
80
90
80
R
= 25 W, L = 1mH, V = 390V
R
= 25 W, L = 1mH, V = 390V
G
CE
G
CE
70
60
50
40
30
20
o
o
V
= 15V, T = 125 C
J
GE
T
J
= 125 C, V = 12V OR 15V
GE
o
V
= 12V, T = 125 C
J
GE
o
T
= 25 C, V = 12V OR 15V
GE
o
J
V
GE
= 15V, T = 25 C
J
o
V
= 12V, T = 25 C
GE
J
60
0
2
4
6
8
10
12
14
0
2
4
6
8
10
12
14
I
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
CE
Figure 11. TURN−OFF DELAY TIME vs
COLLECTOR TO
Figure 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
EMITTER CURRENT
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5
HGTG7N60A4D, HGTP7N60A4D,
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
120
100
80
60
40
20
0
15
o
I
= 1mA, R
, T = 25 C
J
= 43 W
L
DUTY CYCLE < 0.5%, VCE = 10 V
PULSE DURATION = 250 ms
G(REF)
V
CE
= 600V
12
9
o
T
= 25 C
V
= 400V
J
CE
o
o
T
= 125 C
T
= −55 C
J
J
V
CE
= 200V
6
3
0
0
5
10
15
20
25
30
35
40
7
8
9
10
11
12
13
14
15
Figure 13. TRANSFER CHARACTERISTIC
Figure 14. GATE CHARGE WAVEFORMS
800
600
10
o
R
E
= 25 W , L = 1mH, V
= 390V, V
= 15V
GE
T
E
= 125 C, L = 1mH, V
= 390V, V = 15V
GE
G
CE
OFF
J
CE
= E
+ E
= E
+ E
ON2 OFF
TOTAL
ON2
TOTAL
I
= 14A
CE
I
= 14A
CE
400
200
0
1
I
I
= 7A
CE
CE
I
I
= 7A
CE
CE
= 3.5A
= 3.5A
0.1
10
1000
25
50
75
100
125
150
100
R
, GATE RESISTANCE (W)
G
o
, CASE TEMPERATURE ( C)
T
C
Figure 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
Figure 16. TOTAL SWITCHING LOSS vs GATE
RESISTANCE
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
2.8
2.6
2.4
2.2
2.0
1.8
o
FREQUENCY = 1MHz
DUTY CYCLE < 0.5%, T = 25
C
J
C
C
IES
I
= 14A
CE
I
I
= 7A
CE
CE
OES
= 3.5A
C
RES
9
10
11
12
13
14
15
16
0
20
40
60
80
100
V
, COLLECTOR TO EMITTER VOLTAGE (V)
V
, GATE TO EMITTER VOLTAGE (V)
CE
GE
Figure 17. CAPACITANCE vs COLLECTOR TO
EMITTER VOLTAGE
Figure 18. COLLECTOR TO EMITTER ON−STATE
VOLTAGE
vs GATE TO EMITTER VOLTAGE
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6
HGTG7N60A4D, HGTP7N60A4D,
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
100
35
30
DUTY CYCLE < 0.5%,
PULSE DURATION = 250 ms
dI
/dt = 200A/ms
o
EC
125 C t
rr
80
60
40
20
0
25
20
15
o
125 C t
o
o
b
125 C
25 C
o
125 C t
a
o
25 C t
rr
10
5
o
25 C t
a
o
25 C t
b
0
0
1
2
3
4
5
0
2
4
6
8
10
12
14
V
, FORWARD VOLTAGE (V)
EC
I
, FORWARD CURRENT (A)
EC
Figure 19. DIODE FORWARD CURRENT vs
FORWARD VOLTAGE DROP
Figure 20. DIODE FORWARD CURRENT vs
FORWARD VOLTAGE DROP
60
50
500
400
I
= 7A, V = 390V
CE
V
= 390V
EC
CE
o
125 C, I
= 7A
EC
o
125 C t
b
40
30
20
10
300
o
125 C, I
= 3.5A
EC
o
125 C t
200
100
0
a
o
25 C, I
= 7A
EC
EC
o
25 C t
a
o
25 C, I
= 3.5A
o
25 C t
b
100
200
300
400
500
600
700
100
200
300
400
500
600
700
di /dt, RATE OF CHANGE OF CURRENT (A/ms)
EC
di /dt, RATE OF CHANGE OF CURRENT (A/ms)
EC
Figure 21. RECOVERY TIMES vs RATE OF
CHANGE OF CURRENT
Figure 22. STORED CHARGE vs RATE OF
CHANGE OF CURRENT
0
10
0.5
0.2
0.1
t
1
−1
10
0.05
P
D
0.02
0.01
t
2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZqJC X RqJC) + TC
SINGLE PULSE
−2
10
−5
−4
−3
10
−2
10
−1
10
0
1
10
10
10
10
Figure 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
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7
HGTG7N60A4D, HGTP7N60A4D,
TEST CIRCUITS AND WAVEFORMS
HGTG7N60A4D
90%
OFF
10%
ON2
V
GE
E
E
L = 1mH
V
CE
R
= 25 W
G
90%
DUT
10%
d(OFF)I
+
I
CE
t
t
V
= 390V
rI
DD
t
fI
−
t
d(ON)I
Figure 24. INDUCTIVE SWITCHING TEST CIRCUIT
Figure 25. SWITCHING TEST WAVEFORMS
HANDLING PRECAUTIONS FOR IGBTS
Insulated Gate Bipolar Transistors are susceptible to gate−
insulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not discharged through the
device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in
military, industrial and consumer applications, with
virtually no damage problems due to electrostatic discharge.
IGBTs can be handled safely if the following basic
precautions are taken:
OPERATING FREQUENCY INFORMATION
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows fMAX1 or fMAX2; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held to
10% of the on−state time for a 50% duty factor. Other
definitions are possible. td(OFF)I and td(ON)I are defined in
Figure 25. Device turn−off delay can establish an additional
frequency limiting condition for an application other than
TJM. td(OFF)I is important when controlling output ripple
under a lightly loaded condition.
1. Prior to assembly into a circuit, all leads should be
kept shorted together either by the use of metal
shorting springs or by the insertion into conductive
material such as “ECCOSORBD™ LD26” or
equivalent
2. When devices are removed by hand from their
carriers, the hand being used should be grounded
by any suitable means − for example, with a
metallic wristband
f
MAX2 is defined by fMAX2 = (PD − PC)/(EOFF + EON2). The
allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC
.
The sum of device switching and conduction losses must not
exceed PD. A 50% duty factor was used (Figure 3) and the
conduction losses (PC) are approximated by
3. Tips of soldering irons should be grounded
4. Devices should never be inserted into or removed
from circuits with power on
PC + (VCE ICE)ń2
(eq. 1)
5. Gate Voltage Rating − Never exceed the
EON2 and EOFF are defined in the switching waveforms
shown in Figure 25. EON2 is the integral of the instantaneous
power loss (ICE x VCE) during turn−on and EOFF is the integral
of the instantaneous power loss (ICE x VCE) during turn−off.
All tail losses are included in the calculation for EOFF; i.e.,
the collector current equals zero (ICE = 0).
gate−voltage rating of VGEM. Exceeding the rated
VGE can result in permanent damage to the oxide
layer in the gate region
6. Gate Termination − The gates of these devices are
essentially capacitors. Circuits that leave the gate
open− circuited or floating should be avoided.
These conditions can result in turn−on of the
device due to voltage buildup on the input
capacitor due to leakage currents or pickup
7. Gate Protection - These devices do not have an
internal monolithic Zener diode from gate to
emitter. If gate protection is required an external
Zener is recommended
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8
HGTG7N60A4D, HGTP7N60A4D,
Saber is a registered trademark of Sabremark Limited Partnership.
All brand names and product names appearing in this document are registered trademarks or trademarks of their respective holders.
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9
HGTG7N60A4D, HGTP7N60A4D,
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
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10
HGTG7N60A4D, HGTP7N60A4D,
TO−220−3LD
CASE 340AT
ISSUE A
DATE 03 OCT 2017
Scale 1:1
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11
HGTG7N60A4D, HGTP7N60A4D,
D2PAK−3 (TO−263, 3−LEAD)
CASE 418AJ
ISSUE E
DATE 25 OCT 2019
SCALE 1:1
XXXXXX = Specific Device Code
A
= Assembly Location
WL
Y
= Wafer Lot
= Year
GENERIC MARKING DIAGRAMS*
WW
W
M
G
AKA
= Work Week
= Week Code (SSG)
= Month Code (SSG)
= Pb−Free Package
= Polarity Indicator
XX
AYWW
XXXXXXXXG
AKA
XXXXXXXXG
AYWW
XXXXXX
XXYMW
XXXXXXXXX
AWLYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
IC
Standard
Rectifier
SSG
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12
HGTG7N60A4D, HGTP7N60A4D,
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