HGTP12N60C3D [ONSEMI]
600V, UFS IGBT;
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| 描述： | 600V, UFS IGBT 超快速恢复二极管 局域网 电动机控制 栅 瞄准线 双极性晶体管 |
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HGTP12N60C3D, HGT1S12N60C3DS
Data Sheet
December 2001
24A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diodes
Features
o
• 24A, 600V at T = 25 C
C
This family of MOS gated high voltage switching devices
combine the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25 C and 150 C. The IGBT used is the
development type TA49123. The diode used in anti-parallel
with the IGBT is the development type TA49188.
o
• Typical Fall Time at T = 150 C . . . . . . . . . . . . . . . . 210ns
J
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
o
o
Packaging
JEDEC TO-220AB
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential.
E
C
G
COLLECTOR
(FLANGE)
Formerly Developmental Type TA49182.
Ordering Information
PART NUMBER
HGTP12N60C3D
HGT1S12N60C3DS
PACKAGE
TO-220AB
TO-263AB
BRAND
12N60C3D
12N60C3D
JEDEC TO-263AB
COLLECTOR
(FLANGE)
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263 variant in Tape and Reel, i.e.,
HGT1S12N60C3DS9A.
G
E
Symbol
C
G
E
©2001 Fairchild Semiconductor Corporation
HGTP12N60C3D, HGT1S12N60C3DS Rev. B
HGTP12N60C3D, HGT1S12N60C3DS
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified
C
ALL TYPES
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
600
V
CES
Collector Current Continuous
o
At T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
24
A
A
A
A
V
V
C25
C110
(AVG)
o
At T = 110 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
12
o
Average Diode Forward Current at 110 C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
12
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
96
±20
CM
GES
GEM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
o
±30
Switching Safe Operating Area at T = 150 C (Figure 14) . . . . . . . . . . . . . . . . . . . . . . SSOA
J
24A at 600V
104
o
Power Dissipation Total at T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
C
W
D
o
o
Power Dissipation Derating T > 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.83
W/ C
C
o
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T , T
-40 to 150
260
C
J
STG
o
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
C
L
SC
SC
Short Circuit Withstand Time (Note 2) at V
Short Circuit Withstand Time (Note 2) at V
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
4
µs
µs
GE
GE
13
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
o
2. V
CE(PK)
= 360V, T = 125 C, R = 25Ω.
J G
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
BV
TEST CONDITIONS
= 250µA, V = 0V
MIN
TYP
MAX
-
UNITS
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
I
600
-
V
µA
mA
V
CES
C
GE
o
I
V
= BV
T
T
T
T
T
T
= 25 C
-
-
-
-
250
2.0
2.0
2.2
2.2
2.4
6.0
±100
-
CES
CE
CES
C
C
C
C
C
C
o
= 150 C
o
Collector to Emitter Saturation Voltage
V
I
I
I
= I
C
, V
C110 GE
= 15V
= 25 C
-
1.65
1.85
1.80
2.0
5.0
-
CE(SAT)
o
= 150 C
-
V
o
= 15A, V
GE
= 15V
= 25 C
-
V
C
C
o
= 150 C
-
V
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
V
= 250µA, V
= V
CE GE
3.0
-
V
GE(TH)
I
V
= ±20V
nA
A
GES
GE
o
SSOA
T = 150 C,
V
V
= 480V
80
24
-
J
CE(PK)
V
R
= 15V,
= 25Ω,
GE
= 600V
-
-
A
CE(PK)
G
L = 100µH
Gate to Emitter Plateau Voltage
On-State Gate Charge
V
I
I
= I
= I
, V
C110 CE
= 0.5 BV
-
-
-
-
-
-
-
-
-
-
7.6
48
-
55
71
-
V
nC
nC
ns
ns
ns
ns
µJ
µJ
V
GEP
C
C
CES
Q
,
V
= 15V
g(ON)
C110
GE
GE
V
= 0.5 BV
CE
CES
V
= 20V
62
o
Current Turn-On Delay Time
Current Rise Time
t
T = 150 C,
I
V
V
28
d(ON)I
J
= I
CE
C110,
= 0.8 BV
t
20
-
ri
d(OFF)I
CE(PK)
CES,
= 15V,
Current Turn-Off Delay Time
Current Fall Time
t
GE
= 25Ω,
270
210
380
900
1.7
400
275
-
R
G
t
fi
L = 100µH
Turn-On Energy
E
ON
Turn-Off Energy (Note 3)
Diode Forward Voltage
E
-
OFF
V
I
= 12A
EC
2.1
EC
©2001 Fairchild Semiconductor Corporation
HGTP12N60C3D, HGT1S12N60C3DS Rev. B
HGTP12N60C3D, HGT1S12N60C3DS
o
Electrical Specifications
PARAMETER
T
= 25 C, Unless Otherwise Specified (Continued)
C
SYMBOL
TEST CONDITIONS
MIN
TYP
32
23
-
MAX
40
UNITS
ns
Diode Reverse Recovery Time
t
I
I
= 12A, dI /dt = 200A/µs
-
-
-
-
rr
EC
EC
EC
= 1.0A, dI /dt = 200A/µs
30
ns
EC
o
Thermal Resistance
R
IGBT
1.2
1.9
C/W
θJC
o
Diode
-
C/W
NOTE:
3. Turn-Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse, and ending
OFF
at the point where the collector current equals zero (I
= 0A). This family of devices was tested per JEDEC Standard No. 24-1 Method for
CE
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include
losses due to diode recovery.
Typical Performance Curves
o
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, T = 25 C
C
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
DUTY CYCLE <0.5%, V
PULSE DURATION = 250µs
= 10V
CE
V
= 15.0V
GE
12.0V
o
10.0V
9.0V
T
= 150 C
C
o
T
= 25 C
C
o
T
= -40 C
C
8.5V
8.0V
7.5V
7.0V
4
6
8
10
12
14
0
2
4
6
8
10
V
, COLLECTOR TO EMITTER VOLTAGE (V)
V
, GATE TO EMITTER VOLTAGE (V)
CE
GE
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
80
80
PULSE DURATION = 250µs
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, V
= 15V
DUTY CYCLE <0.5%, V
= 10V
70
60
50
40
30
20
10
0
GE
GE
70
60
50
40
30
20
10
0
o
T
= -40 C
C
o
T
= 25 C
C
o
o
= -40 C
T
= 150 C
T
C
C
o
T
= 150 C
C
o
T
= 25 C
C
0
1
2
3
4
5
0
1
2
3
4
5
V
, COLLECTOR TO EMITTER VOLTAGE (V)
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
CE
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
©2001 Fairchild Semiconductor Corporation
HGTP12N60C3D, HGT1S12N60C3DS Rev. B
HGTP12N60C3D, HGT1S12N60C3DS
Typical Performance Curves (Continued)
25
20
15
10
5
20
15
10
5
140
120
100
80
V
= 15V
GE
o
V
= 360V, R = 25Ω, T = 125 C
G J
CE
I
SC
60
40
t
SC
0
20
25
50
75
100
125
150
10
11
12
13
14
15
o
T
, CASE TEMPERATURE ( C)
V
, GATE TO EMITTER VOLTAGE (V)
C
GE
FIGURE 5. MAXIMUM DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
100
400
o
= 150 C, R = 25Ω, L = 100µH, V = 480V
CE(PK)
T
o
J
G
T
= 150 C, R = 25Ω, L = 100µH, V
= 480V
CE(PK)
J
G
300
V
= 15V
GE
50
V
= 10V
GE
V
= 10V
200
100
GE
30
20
V
= 15V
GE
10
5
10
15
20
25
30
5
10
15
20
25
30
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 7. TURN ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
200
300
o
= 150 C, R = 25Ω, L = 100µH, V = 480V
CE(PK)
o
= 150 C, R = 25Ω, L = 100µH, V = 480V
CE(PK)
T
J
G
T
J
G
100
V
= 10V
GE
200
V
= 10V OR 15V
GE
V
= 15V
GE
10
5
100
90
80
5
10
15
20
25
30
5
10
15
20
25
30
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
FIGURE 9. TURN ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
©2001 Fairchild Semiconductor Corporation
HGTP12N60C3D, HGT1S12N60C3DS Rev. B
HGTP12N60C3D, HGT1S12N60C3DS
Typical Performance Curves (Continued)
2.0
1.5
1.0
0.5
0
3.0
2.5
2.0
1.5
1.0
0.5
0
o
o
T
= 150 C, R = 25Ω, L = 100µH, V
= 480V
CE(PK)
J
G
T
= 150 C, R = 25Ω, L = 100µH, V
= 480V
CE(PK)
J
G
V
= 10V
GE
V
= 10V or 15V
GE
V
= 15V
GE
5
10
15
20
25
30
5
10
15
20
25
30
I
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
CE
FIGURE 11. TURN ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. TURN OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
200
o
o
100
o
T
= 150 C, T = 75 C
C
J
T
= 150 C, V = 15V, R = 25Ω, L = 100µH
J
GE
G
R
= 25Ω, L = 100µH
100
10
1
G
80
60
40
20
0
V
= 10V
GE
V
= 15V
GE
LIMITED BY
CIRCUIT
f
= 0.05/(t
+ t
D(ON)I
)
)
MAX1
D(OFF)I
= (P - P )/(E + E
ON OFF
f
MAX2
D
C
P
= ALLOWABLE DISSIPATION
D
P
= CONDUCTION DISSIPATION
C
(DUTY FACTOR = 50%)
o
R
= 1.2 C/W
θJC
5
10
20
30
0
100
200
300
400
500
600
I
, COLLECTOR TO EMITTER CURRENT (A)
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
CE(PK)
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 14. SWITCHING SAFE OPERATING AREA
2500
15
o
I
REF = 1.276mA, R = 50Ω, T = 25 C
G
L
C
FREQUENCY = 1MHz
2000
12
9
C
IES
V
= 600V
CE
1500
1000
500
0
6
V
= 400V
CE
V
= 200V
CE
3
C
OES
C
RES
0
0
5
10
15
20
25
0
10
20
30
40
50
60
V
, COLLECTOR TO EMITTER VOLTAGE (V)
Q , GATE CHARGE (nC)
CE
g
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. GATE CHARGE WAVEFORMS
©2001 Fairchild Semiconductor Corporation
HGTP12N60C3D, HGT1S12N60C3DS Rev. B
HGTP12N60C3D, HGT1S12N60C3DS
Typical Performance Curves (Continued)
0
10
0.5
0.2
0.1
-1
10
0.05
t
0.02
0.01
1
P
D
DUTY FACTOR, D = t / t
1
2
t
SINGLE PULSE
2
PEAK T = P x Z
x R + T
θJC C
J
D
θJC
-1
-2
10
-5
-4
-3
-2
10
0
1
10
10
10
10
t , RECTANGULAR PULSE DURATION (s)
10
10
1
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
50
40
30
20
10
0
35
o
= 25 C, dI /dt = 200A/ms
T
C
EC
30
25
20
15
10
5
t
t
rr
o
25 C
o
a
100 C
t
b
o
150 C
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
5
I
10
15
20
V
, FORWARD VOLTAGE (V)
EC
, FORWARD CURRENT (A)
EC
FIGURE 18. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT
Test Circuit and Waveform
HGTP12N60C3D
90%
10%
V
V
GE
E
E
OFF
ON
L = 100µH
CE
R
= 25Ω
G
90%
10%
d(OFF)I
+
-
I
CE
t
t
V
= 480V
ri
DD
t
fi
t
d(ON)I
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 21. SWITCHING TEST WAVEFORMS
©2001 Fairchild Semiconductor Corporation
HGTP12N60C3D, HGT1S12N60C3DS Rev. B
HGTP12N60C3D, HGT1S12N60C3DS
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
Operating frequency information for a typical device (Figure 13)
is presented as a guide for estimating device performance
for a specific application. Other typical frequency vs collector
current (I ) plots are possible using the information shown
CE
for a typical unit in Figures 4, 7, 8, 11 and 12. The operating
frequency plot (Figure 13) of a typical device shows f
or
whichever is smaller at each point. The information is
MAX1
f
MAX2
based on measurements of a typical device and is bounded
by the maximum rated junction temperature.
f
is defined by f
= 0.05/(t
+ t
).
D(ON)I
MAX1
MAX1
D(OFF)I
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD LD26” or equivalent.
are possible. t
and t
are defined in Figure 21.
D(ON)I
D(OFF)I
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T . t
JM D(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means, for example, with a metallic wristband.
f
is defined by f
MAX2
= (P - P )/(E
OFF
+ E ). The
ON
MAX2
D
C
3. Tips of soldering irons should be grounded.
allowable dissipation (P ) is defined by P = (T - T )/R
.
D
D
JM θJC
C
The sum of device switching and conduction losses must not
4. Devices should never be inserted into or removed from
circuits with power on.
exceed P . A 50% duty factor was used (Figure 13) and the
D
conduction losses (P ) are approximated by
C
5. Gate Voltage Rating - Never exceed the gate-voltage
P
= (V x I )/2.
rating of V
. Exceeding the rated V can result in
C
CE CE
GEM GE
permanent damage to the oxide layer in the gate region.
E
and E are defined in the switching waveforms
ON
OFF
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to voltage
buildup on the input capacitor due to leakage currents or
pickup.
shown in Figure 21. E
is the integral of the instantaneous
ON
power loss (I
CE
x V ) during turn-on and E
is the
OFF
CE
integral of the instantaneous power loss during turn-off. All
tail losses are included in the calculation for E ; i.e., the
OFF
collector current equals zero (I
= 0).
CE
7. Gate Protection - These devices do not have an internal
monolithic Zener Diode from gate to emitter. If gate
protection is required, an external Zener is
recommended.
©2001 Fairchild Semiconductor Corporation
HGTP12N60C3D, HGT1S12N60C3DS Rev. B
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