HUF75545S3ST [ONSEMI]
N 沟道，UltraFET 功率 MOSFET，80V，75A，10mΩ;
| 型号： | HUF75545S3ST |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，UltraFET 功率 MOSFET，80V，75A，10mΩ 开关 晶体管 |
| 文件： | 总11页 (文件大小：701K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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HUF75545P3, HUF75545S3S
Data Sheet
October 2013
N-Channel UltraFET Power MOSFET
80 V, 75 A, 10 mΩ
Features
Packaging
• Ultra Low On-Resistance
= 0.010Ω, GVS = 10V
-
r
DS(ON)
JEDEC TO-220AB
JEDEC TO-263AB
DRAIN
(FLANGE)
• Simulation Models
SOURCE
DRAIN
GATE
- Temperature Compensated PSPICE® and SABER™
Electrical Models
GATE
- Spice and SABER Thermal Impedance Models
SOURCE
- www.onsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
DRAIN
(FLANGE)
HUF75545S3ST
HUF75545P3
Ordering Information
Symbol
PART NUMBER
HUF75545P3
PACKAGE
TO-220AB
TO-263AB
BRAND
75545P
75545S
D
S
HUF75545S3ST
G
o
Absolute Maximum Ratings
T = 25 C, Unless Otherwise Specified
C
HUF75545P3,
HUF75545S3ST
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
80
80
V
V
V
DSS
Drain to Gate Voltage (R
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
±20
GS
Drain Current
o
Continuous (T = 25 C, V
C
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
75
73
A
A
GS
D
D
o
Continuous (T = 100 C, V
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
C
GS
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Figure 4
Figure 6
270
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
W
D
o
o
Derate Above 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.8
W/ C
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T
J
-55 to 175
C
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
o
300
260
C
C
L
o
pkg
NOTES:
o
o
1. T = 25 C to 150 C.
J
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2002 Semiconductor Components Industries, LLC.
Publication Order Number:
October-2017, Rev. 3
HUF75545S3S/D
HUF75545P3, HUF75545S3S
o
Electrical Specifications
PARAMETER
T = 25 C, Unless Otherwise Specified
C
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
I
= 250µA, V
= 0V (Figure 11)
80
-
-
-
-
-
-
V
DSS
D
GS
GS
GS
I
V
V
V
= 75V, V
= 70V, V
= ±20V
= 0V
1
µA
µA
nA
DSS
DS
DS
GS
o
= 0V, T = 150 C
-
250
±100
C
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
Drain to Source On Resistance
THERMAL SPECIFICATIONS
I
-
GSS
V
V
= V , I = 250µA (Figure 10)
2
-
-
4
V
GS(TH)
GS
DS
D
r
I
= 75A, V
= 10V (Figure 9)
0.0082 0.010
Ω
DS(ON)
D
GS
o
Thermal Resistance Junction to Case
R
R
TO-220 and TO-263
-
-
-
-
0.55
62
C/W
θJC
o
Thermal Resistance Junction to
Ambient
C/W
θJA
SWITCHING SPECIFICATIONS (V
Turn-On Time
= 10V)
t
GS
V
V
R
= 40V, I = 75A
D
= 10V,
= 2.5Ω
-
-
-
-
-
-
-
14
125
40
90
-
210
ns
ns
ns
ns
ns
ns
ON
DD
GS
Turn-On Delay Time
Rise Time
t
-
d(ON)
GS
t
-
r
Turn-Off Delay Time
Fall Time
t
-
-
d(OFF)
t
f
Turn-Off Time
t
195
OFF
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
V
V
V
= 0V to 20V
= 0V to 10V
= 0V to 2V
V
= 40V,
-
-
-
-
-
195
105
6.8
15
235
125
8.2
-
nC
nC
nC
nC
nC
g(TOT)
GS
GS
GS
DD
= 75A,
I
I
D
Gate Charge at 10V
Q
g(10)
g(TH)
= 1.0mA
g(REF)
(Figure 13)
Threshold Gate Charge
Q
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
CAPACITANCE SPECIFICATIONS
Input Capacitance
Q
gs
gd
Q
43
-
C
V
= 25V, V = 0V,
GS
-
-
-
3750
1100
350
-
-
-
pF
pF
pF
ISS
DS
f = 1MHz
(Figure 12)
Output Capacitance
C
OSS
RSS
Reverse Transfer Capacitance
C
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
1.25
1.00
100
UNITS
Source to Drain Diode Voltage
V
I
I
I
I
= 75A
= 35A
-
-
-
-
-
-
-
-
V
V
SD
SD
SD
SD
SD
Reverse Recovery Time
t
= 75A, dI /dt = 100A/µs
SD
ns
nC
rr
Reverse Recovered Charge
Q
= 75A, dI /dt = 100A/µs
300
RR
SD
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2
HUF75545P3, HUF75545S3S
Typical Performance Curves
1.2
1.0
0.8
0.6
0.4
0.2
0
80
60
40
20
0
V
= 10V
GS
175
0
25
50
75
100
150
175
25
50
75
100
125
o
150
125
o
T
, CASE TEMPERATURE ( C)
T , CASE TEMPERATURE ( C)
C
C
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
DUTY CYCLE - DESCENDING ORDER
0.5
1
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
1
2
PEAK T = P
x Z
x R
+ T
θJC C
J
DM
θJC
0.01
-5
-4
10
-3
10
-2
10
-1
10
0
1
10
10
10
t, RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
2000
1000
o
T
= 25 C
C
FOR TEMPERATURES
o
ABOVE 25 C DERATE PEAK
CURRENT AS FOLLOWS:
175 - T
150
C
I = I
25
V
= 10V
GS
100
50
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
-5
-4
-3
10
-2
10
-1
0
1
10
10
10
10
10
t, PULSE WIDTH (s)
FIGURE 4. PEAK CURRENT CAPABILITY
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3
HUF75545P3, HUF75545S3S
Typical Performance Curves (Continued)
600
100
600
If R = 0
= (L)(I )/(1.3*RATED BV
t
- V
)
DD
AV
If R ≠ 0
= (L/R)ln[(I *R)/(1.3*RATED BV - V ) +1]
DSS DD
AS
DSS
t
AV
AS
100
100µs
o
STARTING T = 25 C
J
OPERATION IN THIS
AREA MAY BE
1ms
10
1
LIMITED BY r
DS(ON)
o
STARTING T = 150 C
J
10ms
SINGLE PULSE
T
T
= MAX RATED
J
C
o
= 25 C
10
0.001
0.01
0.1
10
1
1
10
, DRAIN TO SOURCE VOLTAGE (V)
100
200
t
, TIME IN AVALANCHE (ms)
AV
V
DS
NOTE: Refer to ON Semiconductor Application Notes AN9321
and AN9322.
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
150
150
V
= 7V
= 6V
V
= 20V
= 10V
GS
GS
PULSE DURATION = 80µs
V
V
DUTY CYCLE = 0.5% MAX
GS
GS
V
= 15V
DD
120
90
60
30
0
120
90
60
30
0
V
=5V
GS
o
T
= 175 C
J
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
o
T
= 25 C
o
J
T
= -55 C
J
o
T
= 25 C
C
2
3
4
5
6
0
1
2
3
4
V
, GATE TO SOURCE VOLTAGE (V)
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
GS
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
2.5
1.2
V
= 10V, I = 75A
V
= V , I = 250µA
DS
PULSE DURATION = 80µs
GS
D
GS
D
DUTY CYCLE = 0.5% MAX
2.0
1.5
1.0
0.8
1.0
0.5
0.6
0.4
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
o
o
T , JUNCTION TEMPERATURE ( C)
T , JUNCTION TEMPERATURE ( C)
J
J
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
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4
HUF75545P3, HUF75545S3S
Typical Performance Curves (Continued)
1.2
1.1
1.0
0.9
0.8
10000
1000
100
I
= 250µA
D
C
= C
+ C
GS GD
ISS
C
C
+ C
DS GD
OSS
C
= C
GD
RSS
V
= 0V, f = 1MHz
1
GS
-80
-40
0
40
80
120
160
200
0.1
10
80
o
T , JUNCTION TEMPERATURE ( C)
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
J
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
10
V
= 40V
DD
8
6
4
2
0
WAVEFORMS IN
DESCENDING ORDER:
I
I
= 75A
= 35A
D
D
0
30
60
Q , GATE CHARGE (nC)
90
120
g
NOTE: Refer to ON Semiconductor Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE
CURRENT
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HUF75545P3, HUF75545S3S
Test Circuits and Waveforms
V
DS
BV
DSS
L
t
P
V
DS
I
VARY t TO OBTAIN
P
AS
+
V
DD
R
REQUIRED PEAK I
AS
G
V
DD
-
V
GS
DUT
t
P
I
AS
0V
0
0.01Ω
t
AV
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
V
DS
V
Q
DD
R
g(TOT)
L
V
DS
V
= 20V
GS
V
Q
GS
g(10)
+
-
V
DD
V
= 10V
V
GS
GS
DUT
V
= 2V
GS
I
0
g(REF)
Q
g(TH)
Q
Q
gd
gs
I
g(REF)
0
FIGURE 16. GATE CHARGE TEST CIRCUIT
FIGURE 17. GATE CHARGE WAVEFORMS
V
t
t
DS
ON
OFF
t
d(OFF)
t
d(ON)
t
t
f
R
L
r
V
DS
90%
90%
+
V
GS
V
DD
10%
10%
0
-
DUT
90%
50%
R
GS
V
GS
50%
PULSE WIDTH
10%
V
GS
0
FIGURE 18. SWITCHING TIME TEST CIRCUIT
FIGURE 19. SWITCHING TIME WAVEFORM
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HUF75545P3, HUF75545S3S
PSPICE Electrical Model
.SUBCKT HUF75545 2 1 3 ;
rev 21 May 1999
CA 12 8 5.4e-9
CB 15 14 5.3e-9
CIN 6 8 3.4e-9
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
LDRAIN
DPLCAP
5
DRAIN
2
10
RLDRAIN
RSLC1
51
+
EBREAK 11 7 17 18 87.4
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
DBREAK
RSLC2
5
51
ESLC
11
-
50
+
-
17
18
-
DBODY
RDRAIN
6
8
EBREAK
ESG
IT 8 17 1
EVTHRES
+
+
16
21
-
19
8
MWEAK
LDRAIN 2 5 1.0e-9
LGATE 1 9 5.1e-9
LSOURCE 3 7 4.4e-9
LGATE
EVTEMP
+
RGATE
GATE
1
6
-
18
22
MMED
9
20
MSTRO
8
RLGATE
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
LSOURCE
CIN
SOURCE
3
7
RSOURCE
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 4.80e-3
RGATE 9 20 0.87
RLDRAIN 2 5 10
RLSOURCE
S1A
S2A
RBREAK
12
15
13
8
14
13
17
18
RLGATE 1 9 51
RLSOURCE 3 7 44
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 1.6e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
RVTEMP
19
-
S1B
S2B
13
CB
CA
IT
14
+
+
VBAT
6
8
5
8
EGS
EDS
+
-
-
8
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
22
RVTHRES
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*320),3))}
.MODEL DBODYMOD D (IS = 3.6e-12 RS = 2.1e-3 TRS1 = 1.5e-3 TRS2 = 5.1e-6 CJO = 4.6e-9 TT = 3.3e-8 M = 0.55)
.MODEL DBREAKMOD D (RS = 2.3e-1 TRS1 = 0 TRS2 = -1.8e-5)
.MODEL DPLCAPMOD D (CJO = 4.8e-9 IS = 1e-30 N = 10 VJ = 1 M = 0.8)
.MODEL MMEDMOD NMOS (VTO = 3.04 KP = 6 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 0.87)
.MODEL MSTROMOD NMOS (VTO = 3.5 KP = 105 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 2.65 KP = 0.12 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 8.7 )
.MODEL RBREAKMOD RES (TC1 = 1.3e-3 TC2 = -1e-6)
.MODEL RDRAINMOD RES (TC1 = 9e-3 TC2 = 2.8e-5)
.MODEL RSLCMOD RES (TC1 = 1.53e-3 TC2 = 2e-5)
.MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 1e-6)
.MODEL RVTHRESMOD RES (TC1 = -2.3e-3 TC2 = -1.2e-5)
.MODEL RVTEMPMOD RES (TC1 = -2.9e-3 TC2 = 5e-7)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -5 VOFF= -3)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -3 VOFF= -5)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.5 VOFF= 0.5)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.5 VOFF= -1.5)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
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7
HUF75545P3, HUF75545S3S
SABER Electrical Model
REV 21 may 1999
template huf75545 n2,n1,n3
electrical n2,n1,n3
{
var i iscl
d..model dbodymod = (is = 3.6e-12, cjo = 4.6e-9, tt = 3.3e-8, m = 0.55)
d..model dbreakmod = ()
d..model dplcapmod = (cjo = 4.8e-9, is = 1e-30, vj=1.0, m = 0.8 )
m..model mmedmod = (type=_n, vto = 3.04, kp = 6, is = 1e-30, tox = 1)
m..model mstrongmod = (type=_n, vto = 3.5, kp = 105, is = 1e-30, tox = 1)
m..model mweakmod = (type=_n, vto = 2.65, kp = 0.12, is = 1e-30, tox = 1)
sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = -5, voff = -3)
sw_vcsp..model s1bmod = (ron =1e-5, roff = 0.1, von = -3, voff = -5)
sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = -1.5, voff = 0.5)
sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = 0.5, voff = -1.5)
LDRAIN
RLDRAIN
RDBODY
DPLCAP
5
DRAIN
2
10
RSLC1
51
RDBREAK
72
DBREAK
11
RSLC2
c.ca n12 n8 = 5.4e-9
c.cb n15 n14 = 5.3e-9
c.cin n6 n8 = 3.4e-9
ISCL
50
-
d.dbody n7 n71 = model=dbodymod
d.dbreak n72 n11 = model=dbreakmod
d.dplcap n10 n5 = model=dplcapmod
71
RDRAIN
6
8
ESG
EVTHRES
+
+
16
21
-
19
8
MWEAK
LGATE
EVTEMP
+
i.it n8 n17 = 1
DBODY
RGATE
GATE
1
6
-
18
22
EBREAK
+
MMED
l.ldrain n2 n5 = 1e-9
l.lgate n1 n9 = 5.1e-9
l.lsource n3 n7 = 4.4e-9
9
20
MSTRO
8
17
18
-
RLGATE
LSOURCE
CIN
SOURCE
3
7
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u
RSOURCE
RLSOURCE
S1A
S2A
RBREAK
12
res.rbreak n17 n18 = 1, tc1 = 1.3e-3, tc2 = -1e-6
res.rdbody n71 n5 = 2.1e-3, tc1 = 1.5e-3, tc2 = 5.1e-6
res.rdbreak n72 n5 = 2.3e-1, tc1 = 0, tc2 = -1.8e-5
res.rdrain n50 n16 = 4.8e-3, tc1 = 9e-3, tc2 = 2.8e-5
res.rgate n9 n20 = 0.87
res.rldrain n2 n5 = 10
res.rlgate n1 n9 = 51
res.rlsource n3 n7 = 44
15
13
14
13
17
18
8
RVTEMP
19
-
S1B
S2B
13
CB
CA
IT
14
+
+
VBAT
6
8
5
8
EGS
EDS
+
res.rslc1 n5 n51 = 1e-6, tc1 = 1.53e-3, tc2 = 2e-5
res.rslc2 n5 n50 = 1e3
-
-
8
22
res.rsource n8 n7 = 1.6e-3, tc1 = 1e-3, tc2 = 1e-6
res.rvtemp n18 n19 = 1, tc1 = -2.9e-3, tc2 = 5e-7
res.rvthres n22 n8 = 1, tc1 = -2.3e-3, tc2 = -1.2e-5
RVTHRES
spe.ebreak n11 n7 n17 n18 = 87.4
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
spe.evthres n6 n21 n19 n8 = 1
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/320))** 3))
}
}
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8
HUF75545P3, HUF75545S3S
SPICE Thermal Model
JUNCTION
th
REV 21 May 1999
HUF75545T
RTHERM1
RTHERM2
RTHERM3
RTHERM4
RTHERM5
RTHERM6
CTHERM1
CTHERM1 th 6 6.4e-3
CTHERM2 6 5 3.0e-2
CTHERM3 5 4 1.4e-2
CTHERM4 4 3 1.6e-2
CTHERM5 3 2 5.5e-2
CTHERM6 2 tl 1.5
6
CTHERM2
CTHERM3
CTHERM4
CTHERM5
CTHERM6
RTHERM1 th 6 3.2e-3
RTHERM2 6 5 8.1e-3
RTHERM3 5 4 2.3e-2
RTHERM4 4 3 1.3e-1
RTHERM5 3 2 1.8e-1
RTHERM6 2 tl 3.8e-2
5
SABER Thermal Model
SABER thermal model HUF75545T
4
3
2
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 6.4e-3
ctherm.ctherm2 6 5 = 3.0e-2
ctherm.ctherm3 5 4 = 1.4e-2
ctherm.ctherm4 4 3 = 1.6e-2
ctherm.ctherm5 3 2 = 5.5e-2
ctherm.ctherm6 2 tl = 1.5
rtherm.rtherm1 th 6 = 3.2e-3
rtherm.rtherm2 6 5 = 8.1e-3
rtherm.rtherm3 5 4 = 2.3e-2
rtherm.rtherm4 4 3 = 1.3e-1
rtherm.rtherm5 3 2 = 1.8e-1
rtherm.rtherm6 2 tl = 3.8e-2
}
tl
CASE
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9
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