HUFA76407DK8T-F085 [ONSEMI]
60V，3.8A，75mΩ，SO-8，逻辑电平，双 N 沟道，UltraFET®;
| 型号： | HUFA76407DK8T-F085 |
| 厂家： | 
ONSEMI |
| 描述： | 60V，3.8A，75mΩ，SO-8，逻辑电平，双 N 沟道，UltraFET® 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：971K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
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HUFA76407DK8T-F085
Dual N-Channel Logic Level UltraFET® Power MOSFET
60 V, 3.5 A, 105 mΩ
Features
General Description
Ultra-Low On-Resistance rDS(on) = 0.090 at VGS = 10 V
These N-Channel power MOSFETs are manufactured using the
innovative UltraFET® process. This advanced process
technology achieves the lowest possible onresistance per silicon
area, resulting in outstanding performance. This device is
capable of withstanding high energy
Ultra-Low On-Resistance rDS(on) = 0.105 at VGS = 5 V
Peak Current vs Pulse Width Curve
UIS Rating Curve
in the avalanche mode and the diode exhibits very low reverse
recovery time and stored charge. It was designed for use in
applications where power efficiency is important, such as
switching regulators, switching convertors, motor drivers, relay
drivers, low-voltage bus switches, and power management in
portable and battery-operated products.
Transient Thermal Impedance Curve vs Board Mounting Area
Switching Time vs RGS Curves
Qualified to AEC Q101
RoHS Compliant
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDSS
Parameter
Ratings
Units
Drain to Source Voltage
(Note 1)
(Note 1)
60
V
V
V
VDRG
VGS
Drain to Gate Voltage (RGS = 20kΩ)
Gate to Source Voltage
60
±16
Drain Current -Continuous (TA = 25 °C, VGS = 5V)
(Note 2)
(Note 2)
(Note 3)
(Note 3)
3.5
-Continuous (TA = 25 °C, VGS = 10V) (Figure 2)
3.8
ID
A
-Continuous (TA = 100 °C, VGS = 5V)
1
-Continuous (TA = 100 °C, VGS = 4.5V) (Figure 2)
1
Figure 4
Figures 6, 17, 18
2.5
IDM
UIS
Drain Current -Pulsed
Pulsed Avalanche Rating
Power Dissipation
(Note 2)
W
mW/°C
°C
PD
Derate Above 25 °C
20
TJ, TSTG
TL
Operating and Storage Junction Temperature Range
-55 to +150
300
Temperature for Soldering - Leads at 0.063in (1.6mm) from Case for 10s
Temperature for Soldering - Package Body for 10s, See Techbrief TB334
°C
Tpkg
260
°C
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
2500 units
76407DK8
HUFA76407DK8T-F085
SO-8
330mm
12mm
Notes:
1. TJ = 25 °C to 125 °C.
2. 50°C/W measured using FR-4 board with 0.76 in2 (490.3 mm2) copper pad at 1second.
3. 228°C/W measured using FR-4 board with 0.006 in2 (3.87 mm2) copper pad at 1000 seconds.
4. A suffix as “…F085P” has been temporarily introduced in order to manage a double source strategy as ON Semiconductor
has officially announced in Aug 2014.
Publication Order Number:
HUFA76407DK8T-F085/D
©2016 Semiconductor Components Industries, LLC.
September-2017, Rev. 2
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
(Figure 12)
60
55
-
-
-
-
-
-
-
-
ID = 250 A
VGS = 0 V
BVDSS
Drain to Source Breakdown Voltage
V
TA = -40 °C(Figure 12)
1
VDS = 55 V,
VGS = 0 V
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
A
TA = 150 °C
-
250
±100
VGS = ±16 V
-
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 A (Figure 11)
D = 3.8 A, VGS = 10 V (Figure 9,10)
ID = 1.0 A, VGS = 5 V (Figure 9)
ID = 1.0 A, VGS = 4.5 V (Figure 9)
1
-
-
3
V
I
0.075
0.088
0.092
0.090
0.105
0.110
rDS(on)
Static Drain to Source On Resistance
-
-
Thermal Characteristics
0.76in2 (490.3mm2) Pad
0.027in2 (17.4mm2) Pad (Figure 23)
0.006in2 (3.87mm2) Pad (Figure 23)
(Note 2)
-
-
-
-
-
-
50
Thermal Resistance Junction to
Ambient
RJA
191
228
°C/W
Switching Characteristics (V =4.5V)
GS
ton
td(on)
tr
Turn-On Time
Turn-On Delay Time
Rise Time
-
-
-
-
-
-
-
57
-
ns
ns
ns
ns
ns
ns
8
VDD = 30 V, ID = 1.0 A,
VGS = 4.5 V, RGS = 27
(Figure 15, 21, 22)
30
25
25
-
-
td(off)
tf
Turn-Off Delay Time
Fall Time
-
-
toff
Turn-Off Time
75
Switching Characteristics (V =10V)
GS
ton
td(on)
tr
Turn-On Time
Turn-On Delay Time
Rise Time
-
-
-
-
-
-
-
24
ns
ns
ns
ns
ns
ns
5
-
V
V
DD = 30 V, ID = 3.8 A,
GS = 10 V, RGS = 30
11
46
31
-
-
td(off)
tf
Turn-Off Delay Time
Fall Time
-
-
(Figure 16, 21, 22)
toff
Turn-Off Time
116
Gate Charge Characteristics
Qg(TOT)
Qg(5)
Qg(TH)
Qgs
Total Gate Charge
VGS = 0 to 10 V
-
-
-
-
-
9.4
5.3
11.2
6.4
0.5
-
nC
nC
nC
nC
nC
VDD = 30 V,
D = 1.0 A,
Gate Charge at 5V
VGS = 0 to 5 V
I
Threshold Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VGS = 0 to 1 V Ig(REF) = 1.0 mA,
(Figure 14, 19, 20)
0.42
1.05
2.4
Qgd
-
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
-
-
-
330
100
18
-
-
-
pF
pF
pF
V
DS = 25 V, VGS = 0 V,
Output Capacitance
f = 1MHz,
(Figure 13)
Reverse Transfer Capacitance
Drain-Source Diode Characteristics
I
SD = 3.8 A
-
-
-
-
-
-
-
-
1.25
1.00
48
VSD
Source to Drain Diode Forward Voltage
V
ISD = 1.0 A
trr
Reverse Recovery Time
ns
IF = 1.0 A, di/dt = 100 A/s
Qrr
Reverse Recovery Charge
89
nC
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2
Typical Characteristics TJ = 25°C unless otherwise noted
Figure 1. NORMALIZED POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Figure 2. MAXIMUM CONTINUOUS DRAIN CURRENT
vs. AMBIENT TEMPERATURE
Figure 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
Figure 4. PEAK CURRENT CAPABILITY
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3
Typical Characteristics TJ = 25°C unless otherwise noted
Figure 5. FORWARD BIAS SAFE OPERATING AREA
Figure 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
Figure 7. TRANSFER CHARACTERISTICS
Figure 8. SATURATION CHARACTERISTICS
Figure 9. DRAIN TO SOURCE ON RESISTANCE vs
GATE VOLTAGE AND DRAIN CURRENT
Figure 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
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4
Typical Characteristics TJ = 25°C unless otherwise noted
Figure 11. NORMALIZED GATE THRESHOLD
VOLTAGE vs JUNCTION TEMPERATURE
Figure 12. NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE vs JUNCTION
TEMPERATURE
Figure 13. CAPACITANCE vs DRAIN TO SOURCE
VOLTAGE
Figure 14. GATE CHARGE WAVEFORMS FOR
CONSTANT GATE CURRENT
Figure 15. SWITCHING TIME vs GATE RESISTANCE
Figure 16. SWITCHING TIME vs GATE RESISTANCE
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ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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