HUFA76413DK8T-F085 [ONSEMI]
60V，5.1A，41mΩ，SO-8，逻辑电平，双 N 沟道，PowerTrench®;
| 型号： | HUFA76413DK8T-F085 |
| 厂家： | 
ONSEMI |
| 描述： | 60V，5.1A，41mΩ，SO-8，逻辑电平，双 N 沟道，PowerTrench® 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：758K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
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regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
HUFA76413DK8T-F085
N-Channel Logic Level UltraFET® Power MOSFET
60V, 4.8A, 56mΩ
General Description
Features
150°C Maximum Junction Temperature
These N-Channel power MOSFETs are manufactured using the
innovative UltraFET® process. This advanced process
technology achieves the lowest possible onresistance per silicon
area, resulting in outstanding performance. This device is
capable of withstanding high energy
UIS Capability (Single Pulse and Repetitive Pulse)
Ultra-Low On-Resistance rDS(ON) = 0.049Ω, VGS = 10V
Ultra-Low On-Resistance rDS(ON) = 0.056Ω, VGS = 5V
Qualified to AEC Q101
in the avalanche mode and the diode exhibits very low reverse
recovery time and stored charge. It was designed for use in
applications where power efficiency is important, such as
switching regulators, switching convertors, motor drivers, relay
drivers, low-voltage bus switches, and power management in
portable and battery-operated products.
RoHS Compliant
Applications
Motor and Load Control
Powertrain Management
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDSS
VGS
Parameter
Ratings
60
Units
Drain to Source Voltage
Gate to Source Voltage
V
V
±16
Drain Current -Continuous (TC = 25 °C, VGS = 10V)
-Continuous (TC = 25 °C, VGS = 5V)
5.1
4.8
ID
A
-Continuous (TC = 125 °C, VGS = 5V, RJA = 228°C/W)
1
-Pulsed
Figure 4
260
EAS
Single Pulse Avalanche Energy (Note 1)
Power Dissipation
mJ
W
2.5
PD
Derate Above 25 °C
0.02
W/°C
°C
TJ, TSTG
Operating and Storage Temperature
-55 to +150
Thermal Characteristics
50
Thermal Resistance Junction to Ambient SO-8 (Note 2)
RJA
191
228
°C/W
Thermal Resistance Junction to Ambient SO-8 (Note 3)
Thermal Resistance Junction to Ambient SO-8 (Note 4)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
12mm
Quantity
2500 units
76413DK8
HUFA76413DK8T-F085
SO-8
330mm
Notes:
1: Starting TJ = 25 °C, L = 20mH, IAS = 5.1A
2: RθJA is 50 °C/W when mounted on a 0.5 in2 copper pad on FR-4 at 1 second.
3: RθJA is 191 °C/W when mounted on a 0.027 in2 copper pad on FR-4 at 1000 seconds.
4: RθJA is 228 °C/W when mounted on a 0.006 in2 copper pad on FR-4 at 1000 seconds.
5: A suffix as “…F085P” has been temporarily introduced in order to manage a double source strategy as ON Semiconductor
has officially announced in Aug 2014.
Publication Order Number:
HUFA76413DK8T-F085/D
©2016 Semiconductor Components Industries, LLC.
September-2017, Rev. 3
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 A, VGS = 0 V
60
-
-
-
-
1
V
VDS = 55 V,
VGS = 0 V
IDSS
A
nA
TA = 150 °C
-
-
250
±100
IGSS
VGS = ±16 V
-
-
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 A
1
-
-
3
V
I
D = 5.1 A, VGS = 10 V
0.041
0.048
0.091
0.049
0.056
0.106
rDS(on)
Static Drain to Source On Resistance
ID = 4.8 A, VGS = 5 V
-
ID = 4.8 A, VGS = 5 V, TA = 150 °C
-
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
-
-
620
180
30
-
-
pF
pF
pF
nC
nC
nC
nC
nC
VDS = 25 V, VGS = 0 V,
f = 1MHz
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
-
Qg(TOT)
Qg(5)
Qg(TH)
Qgs
VGS = 0 to 10 V
18
23
13
0.8
-
VGS = 0 to 5 V
VGS = 0 to 1 V
10
VDD = 30 V,
ID = 4.8 A,
Ig = 1.0 mA
0.6
1.8
5
Qgd
-
Switching Characteristics (V =5V)
GS
ton
td(on)
tr
Turn-On Time
Turn-On Delay Time
Rise Time
-
-
-
-
-
-
-
44
ns
ns
ns
ns
ns
ns
10
19
45
27
-
-
-
VDD = 30 V, ID = 1.0 A,
VGS = 5 V, RGS = 16
td(off)
tf
Turn-Off Delay Time
Fall Time
-
-
toff
Turn-Off Time
108
Drain-Source Diode Characteristics
I
SD = 4.8 A
-
-
-
-
-
-
-
-
1.25
1.0
43
VSD
Source to Drain Diode Forward Voltage
V
ISD = 2.4 A
trr
Reverse Recovery Time
ns
ISD = 4.8 A, dISD/dt = 100 A/s
Qrr
Reverse Recovery Charge
55
nC
www.onsemi.com
2
Typical Characteristics TJ = 25°C unless otherwise noted
Figure 1. Normalized Power Dissipation vs. Ambient
Temperature
Figure 2. Maximum Continuous Drain Current vs.
Case Temperature
Figure 3. Normalized Maximum Transient Thermal Impedance
Figure 4. Peak Current Capability
www.onsemi.com
3
Typical Characteristics TJ = 25°C unless otherwise noted
Figure 5. Forward Bias Safe Operating Area
Figure 7. Transfer Characteristics
Figure 6. Unclamped Inductive Switching Capability
Figure 8. Saturation Characteristics
Figure 9. Drain to Source On Resistance vs. Gate
Voltage and Drain Current
Figure 10. Normalized Drain to Source On
Resistance vs. Junction Temperature
www.onsemi.com
4
Typical Characteristics TJ = 25°C unless otherwise noted
Figure 11. Normalized Gate Threshold Voltage vs.
Junction Temperature
Figure 12. Normalized Drain to Source Breakdown
Voltage vs. Junction Temperature
Figure 13. Capacitance vs. Drain to Source Voltage
Figure 14. Gate Charge Waveforms for Constant Gate
Currents
Figure 15. Switching Time vs Gate Resistance
www.onsemi.com
5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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