IRL640A [ONSEMI]
功率 MOSFET，N 沟道，逻辑电平，A-FET，200 V，18 A，180 mΩ，TO-220;
| 型号： | IRL640A |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，逻辑电平，A-FET，200 V，18 A，180 mΩ，TO-220 局域网 PC 开关 脉冲 晶体管 |
| 文件： | 总10页 (文件大小：892K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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December 2013
IRL640A
N-Channel Logic Level A-FET
200 V, 18 A, 180 mΩ
Features
Description
•
18 A, 200 V, R
= 180 mΩ @ V = 5 V
DS(on) GS
These N-Channel enhancement mode power field
effect transistors are produced using Fairchild’s
proprietary, planar, DMOS technology. This advanced
technology has been especially tailored to minimize
on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices
are well suited for high efficiency switching DC/DC
converters, switch mode power supplies, DC-AC
converters for uninterrupted power supply and motor
control.
•
•
•
•
•
•
Low Gate Charge (Typ. 40 nC)
Low Crss (Typ. 95 pF)
Fast Switching
100% Avalanche Tested
Improved dv/dt Capability
Logic-Level Gate Drive
D
G
G
D
S
TO-220
S
Absolute Maximum Ratings
Symbol
Characteristic
Value
Units
VDSS
Drain-to-Source Voltage
V
200
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
18
11.4
63
ID
A
IDM
VGS
EAS
IAR
(1)
A
V
Gate-to-Source Voltage
20
±
(2)
(1)
(1)
(3)
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
64
18
EAR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TC=25°C)
Linear Derating Factor
mJ
V/ns
W
11
5
110
0.88
PD
TJ , TSTG
TL
W/°C
Operating Junction and
- 55 to +150
300
Storage Temperature Range
Maximum Lead Temp. for Soldering
°C
Purposes, 1/8 from case for 5-seconds
Thermal Resistance
Symbol
RθJC
Characteristic
Junction-to-Case
Case-to-Sink
Typ.
Max.
Units
--
0.5
--
1.14
--
RθCS
°C/W
RθJA
Junction-to-Ambient
62.5
www.fairchildsemi.com
©1999 Fairchild Semiconductor Corporation
IRL640A Rev. C0
1
Package Marking and Ordering Information
Part Number
Top Mark
Package
Packing Method Reel Size
N/A
Tape Width Quantity
N/A
50 units
IRL640A
IRL640A
TO-220
Tube
Electrical Characteristics (TC=25℃ unless otherwise specified)
Symbol
BVDSS
Characteristic
Min. Typ. Max. Units
Test Condition
VGS=0V,ID=250µA
V
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
200 --
--
∆BV/∆TJ
VGS(th)
ID=250µA
See Fig 7
V/°C
-- 0.17 --
VDS=5V,ID=250µA
VGS=20V
V
1.0
--
--
2.0
100
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
--
--
--
--
IGSS
nA
VGS=-20V
-- -100
VDS=200V
--
--
10
IDSS
Drain-to-Source Leakage Current
µA
VDS=160V,TC=125°C
100
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
RDS(on)
(4)
(4)
VGS=5V,ID=9A
VDS=40V,ID=9A
--
--
0.18
Ω
Ω
gfs
Ciss
Coss
Crss
td(on)
tr
--
--
--
--
--
--
--
--
--
--
--
13.3 --
1310 1705
V
GS=0V,VDS=25V,f =1MHz
See Fig 5
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
250
120
30
25
100
40
56
--
200
95
pF
ns
11
VDD=100V,ID=18A,
RG=4.6Ω
8
td(off)
tf
Turn-Off Delay Time
Fall Time
46
(4) (5)
See Fig 13
15
Qg
Total Gate Charge
Gate-Source Charge
Gate-Drain ( Miller ) Charge
VDS=160V,VGS=5V,
ID=18A
40
Qgs
Qgd
nC
6.8
18.6
--
See Fig 6 & Fig 12 (4) (5)
Source-Drain Diode Ratings and Characteristics
Symbol
IS
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
Integral reverse pn-diode
in the MOSFET
--
--
--
--
--
--
--
18
63
1.5
--
A
ISM
(1)
(4)
VSD
trr
V
--
TJ=25°C,IS=18A,VGS=0V
TJ=25°C,IF=18A
ns
µC
224
Qrr
(4)
1.55 --
diF/dt=100A/µs
Notes;
(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
(2) L=0.3mH, IAS=18A, VDD=50V, R =27 , Starting T =25 C
Ω
°
G
J
(3) ISD 18A, di/dt 260A/ s, V
BV
, Starting T =25 C
°
DSS J
≤
≤
µ
≤
DD
(4) Pulse Test: Pulse Width = 250 s, Duty Cycle 2%
µ
≤
(5) Essentially Independent of Operating Temperature
www.fairchildsemi.com
©1999 Fairchild Semiconductor Corporation
IRL640A Rev. C0
2
ꢀ !ꢁꢂꢃꢄꢅꢆꢇꢃꢈꢃꢂꢉꢊꢈꢁꢋꢉꢁꢂꢋ
Fig 1. Output Characteristics
Fig 2. Transfer Characteristics
V
GS
Top :
.0V
6.0V
5.5V
5.0V
4.5V
4.0V
3.5V
1
10
1
10
150 oC
Bottom : 3.0V
0
10
25oC
@ Notes:
1. GS =0 V
@ Notes:
2. DS =40 V
3. 25 s PulseTest
0
10
1. 25 s PulseTest
- 55 oC
µ
µ
2. C =25 oC
-1
10
-1
0
1
0
2
4
6
8
10
10
10
10
V
, Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
DS
Fig 3. On-Resistance vs. Drain Current
Fig 4. Source-Drain Diode Forward Voltage
0.4
0.3
0.2
0.1
0.0
VGS =5V
1
10
0
10
VGS =10V
@ Notes:
1. GS =0 V
150oC
@Note:T =25oC
25oC
2. 25 µs PulseTest
J
-1
0.4
10
0
20
40
60
80
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I , Drain Current [A]
VSD , Source-Drain Voltage [V]
D
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 6. Gate Charge vs. Gate-Source Voltage
2000
1600
1200
800
C
iss=C +Cgd (C =shorted)
gs ds
C
oss=C +C
ds gd
6
Ciss
Crss=C
V
DS =40 V
DS =100 V
DS =160 V
gd
V
V
4
2
0
Coss
@Notes:
1. VGS =0V
2. f=1MHz
Crss
400
@ Notes: I =18 A
D
00
10
1
0
10
20
30
40
10
Q , Total Gate Charge [nC]
VDS , Drain-Source Voltage [V]
G
www.fairchildsemi.com
©1999 Fairchild Semiconductor Corporation
IRL640A Rev. C0
3
(continued)
ꢀ !ꢁꢂꢃꢄꢅꢆꢇꢃꢈꢃꢂꢉꢊꢈꢁꢋꢉꢁꢂꢋ
Fig 7. Breakdown Voltage vs. Temperature
Fig 8. On-Resistance vs. Temperature
1.2
1.1
1.0
0.9
0.8
2.0
1.5
1.0
0.5
0.0
@Notes:
1.VGS =5V
@ Notes:
1. GS =0 V
2.I =9A
D
2. D =250 µA
-75 -50 -25
0
25
50
75
100 125 150 175
-75 -50 -25
0
25
50
75 100 125 150 175
o
o
T , Junction Temperature [C]
T , Junction Temperature [C]
J
J
Fig 9. Max. Safe Operating Area
Fig 10. Max. Drain Current vs. Case Temperature
20
Operation in This Area
isLimited byR DS(on)
2
10
15
10
5
100 µs
1 ms
1
10
10ms
DC
@ Notes:
1. C =25 oC
0
10
2. J =150 oC
3. Sigle Pulse
-1
0
10
0
1
2
25
50
75
100
125
150
10
10
10
o
T , Case Temperature [C]
VDS , Drain-Source Voltage [V]
c
Fig 11. Thermal Response
100
10-1
10-2
D=0.5
0.2
@ Notes
1. Z JC(t)=1.14 oC/W Max.
θ
2. Duty Factor, D=t1/t2
0.1
3. TJM-T=PDM*Z JC(t)
θ
0.05
PDM
0.02
0.01
t1
t2
single pulse
10-5
10-4
10-3
10-2
10-1
100
101
t1 , Square Wave Pulse Duration [sec]
www.fairchildsemi.com
©1999 Fairchild Semiconductor Corporation
IRL640A Rev. C0
4
VGS
Same Type
as DUT
50KΩ
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
I
= const.
G
Charge
Figure 12. Gate Charge Test Circuit & Waveform
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
V
VDS (t)
VDD
DUT
GS
t p
t p
Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
www.fairchildsemi.com
©1999 Fairchild Semiconductor Corporation
IRL640A Rev. C0
5
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
www.fairchildsemi.com
©1999 Fairchild Semiconductor Corporation
IRL640A Rev. C0
6
Mechanical Dimensions
Figure 16. TO220, Molded, 3-Lead, Jedec Variation AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO220-003
7
www.fairchildsemi.com
©1999 Fairchild Semiconductor Corporation
IRL640A Rev. C0
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intended to be an exhaustive list of all such trademarks.
AccuPower™
AX-CAP *
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
F-PFS™
FRFET
Sync-Lock™
®*
®
®
®
tm
®
Global Power ResourceSM
GreenBridge™
Green FPS™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
™
®
TinyBoost
TinyBuck
®
®
Green FPS™ e-Series™
Gmax™
GTO™
TinyCalc™
®
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC™
TriFault Detect™
Current Transfer Logic™
IntelliMAX™
®
DEUXPEED
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
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Dual Cool™
®
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Saving our world, 1mW/W/kW at a time™
SignalWise™
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ESBC™
®
TRUECURRENT *
SerDes™
SMART START™
®
Solutions for Your Success™
®
®
SPM
Fairchild
®
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SuperFET
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
Fairchild Semiconductor
FACT Quiet Series™
®
®
UHC
®
Ultra FRFET™
UniFET™
VCX™
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XS™
®
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OptoHiT™
OPTOLOGIC
OPTOPLANAR
FACT
FAST
®
®
FastvCore™
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FPS™
®
®
SupreMOS
SyncFET™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
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No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I66
8
www.fairchildsemi.com
©1999 Fairchild Semiconductor Corporation
IRL640A Rev. C0
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
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