ISL9K3060G3 [ONSEMI]
60A，600V，STEALTH™ 双二极管;
| 型号： | ISL9K3060G3 |
| 厂家： | 
ONSEMI |
| 描述： | 60A，600V，STEALTH™ 双二极管 软恢复二极管 快速软恢复二极管 局域网 |
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STEALTHt Dual Diode
60 A, 600 V
ISL9K3060G3
Description
The ISL9K3060G3 is a STEALTH dual diode optimized for low
loss performance in high frequency hard switched applications.
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The STEALTH family exhibits low reverse recovery current (I
)
RR
and exceptionally soft recovery under typical operating conditions.
This device is intended for use as a free wheeling or boost diode
in power supplies and other power switching applications. The low
CATHODE
(BOTTOM SIDE METAL)
ANODE 2
CATHODE
ANODE 1
I
and short ta phase reduce loss in switching transistors. The soft
RR
recovery minimizes ringing, expanding the range of conditions under
which the diode may be operated without the use of additional snubber
circuitry. Consider using the STEALTH diode with an SMPS IGBT
to provide the most efficient and highest power density design at lower
cost.
TO−247−3LD
CASE 340CK
Features
• Stealth Recovery t = 36 ns (@ I = 30 A)
rr
F
K
• Max Forward Voltage, V = 2.4 V (@ T = 25°C)
F
C
• 600 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• This Device is Pb−Free and is RoHS Compliant
A
1
A
2
Applications
• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
MARKING DIAGRAM
• SMPS FWD
$Y&Z&3&K
K3060G3
• Snubber Diode
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
K3060G3
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
February, 2020 − Rev. 3
ISL9K3060G3/D
ISL9K3060G3
DEVICE MAXIMUM RATINGS (per leg) (T = 25°C unless otherwise noted)
C
Parameter
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Symbol
Ratings
Unit
V
V
600
600
RRM
RWM
V
V
V
R
600
V
Average Rectified Forward Current (T = 125°C)
I
30
A
C
F(AV)
Total Device Current (Both Legs)
60
A
Repetitive Peak Surge Current (20 kHz Square Wave)
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60 Hz)
Power Dissipation
I
70
A
FRM
I
325
A
FSM
P
D
200
W
mJ
°C
Avalanche Energy (1 A, 40 mH)
E
20
AVL
Operating and Storage Temperature Range
T
T
−55 to +175
J, STG
Maximum Temperature for Soldering
T
PKG
300
260
°C
°C
L
Leads at 0.063 in (1.6 mm) from Case for 10 s
Package Body for 10 s, See Techbrief TB334
T
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
PACKAGE MARKING AND ORDERING INFORMATION
Device
Device Marking
Package
Packing Method
Tape Width
Quantity
ISL9K3060G3
K3060G3
TO−247−3L
Tube
N/A
30
THERMAL CHARACTERISTICS
Parameter
Symbol
Test Conditions
Min
−
Typ
Max
Unit
°C/W
°C/W
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
R
R
−
−
1.0
30
q
JC
JA
TO−247
−
q
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2
ISL9K3060G3
ELECTRICAL CHARACTERISTICS (per leg) (T = 25°C unless otherwise noted)
C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF STATE CHARACTERISTICS
Instantaneous Reverse Current
I
R
V
R
= 600 V
T
T
= 25°C
−
−
−
−
100
1.0
mA
C
= 125°C
mA
C
ON STATE CHARACTERISTICS
Instantaneous Forward Voltage
V
F
I = 30 A
F
T
T
= 25°C
−
−
2.1
1.7
2.4
2.1
V
V
C
= 125°C
C
DYNAMIC CHARACTERISTICS
Junction Capacitance
C
t
V
= 10 V, I = 0 A
−
120
−
pF
J
R
F
SWITCHING CHARACTERISTICS
Reverse Recovery Time
−
−
−
−
−
−
−
−
−
−
−
−
−
−
27
36
35
45
−
ns
ns
ns
A
I = 1 A, dI/dt = 100 A/ms, V = 30 V
F
rr
R
I = 30 A, dI/dt = 100 A/ms, V = 30 V
F
R
Reverse Recovery Time
Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
t
I
I = 30 A,
36
rr
F
dI /dt = 200 A/ms,
F
2.9
55
−
rr
V
= 390 V,
= 25°C
R
C
T
Q
−
nC
ns
rr
t
rr
I = 30 A,
110
1.9
6
−
F
dI /dt = 200 A/ms,
F
Softness Factor (t / )
S
−
b ta
V
= 390 V,
= 125°C
R
C
T
Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
I
rr
−
A
Q
450
60
−
nC
ns
rr
t
rr
I = 30 A,
−
F
dI /dt = 1000 A/ms,
F
Softness Factor (t / )
S
1.25
21
−
b ta
V
= 390 V,
= 125°C
R
C
T
Reverse Recovery Current
Reverse Recovered Charge
I
rr
−
A
Q
730
800
−
nC
rr
Maximum di/dt During t
dI dt
M/
−
A/ms
b
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
ISL9K3060G3
TYPICAL PERFORMANCE CURVES
60
50
5000
1000
175°C
150°C
125°C
100°C
175°C
150°C
40
30
20
100
25°C
125°C
75°C
10
100°C
1
10
0
25°C
0.1
1.0
1.5
2.0
2.5
3.0
0
0.5
300
400
500
600
100
200
V , Forward Voltage (V)
F
V , Reverse Voltage (V)
R
Figure 1. Forward Current vs. Forward Voltage
Figure 2. Reverse Current vs. Reverse Voltage
120
100
V
R
= 390 V, T = 125°C
J
V
= 390 V, T = 125°C
J
R
90
80
70
60
t AT dI /dt = 200 A/ms, 500 A/ms, 800 A/ms
b
F
100
80
t AT I = 60 A, 30 A, 15 A
b
F
60
50
40
30
20
40
20
0
10
0
tATI=60A,30A,15A
aF
t AT dI /dt = 200 A/ms, 500 A/ms, 800 A/ms
a
F
1400 1600
200
600 800 1000 1200
400
10
20
30
40
60
50
0
dI /dt, Current Rate of Change (A/ms)
F
I , Forward Current (A)
F
Figure 4. ta and tb Curves vs. dIF/dt
Figure 3. ta and tb Curves vs. Forward Current
20
30
25
20
15
10
V
R
= 390 V, T = 125°C
J
dI /dt = 800 A/ms
V
R
= 390 V, T = 125°C
F
J
18
16
14
12
10
8
I = 60 A
F
I = 30 A
F
dI /dt = 500 A/ms
F
I = 15 A
F
dI /dt = 200 A/ms
F
5
0
6
4
0
10
20
30
40
50
60
200 400 600 800 1000 1200 1400 1600
I , Forward Current (A)
F
dI /dt, Current Rate of Change (A/ms)
F
Figure 6. Maximum Reverse Recovery Current
vs. dIF/dt
Figure 5. Maximum Reverse Recovery Current
vs. Forward Current
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4
ISL9K3060G3
TYPICAL PERFORMANCE CURVES (continued)
1200
2.5
2.0
V
R
= 390 V, T = 125°C
J
V
= 390 V, T = 125°C
J
I = 60 A
F
R
I = 60 A
F
1000
800
I = 30 A
F
I = 30 A
F
1.5
1.0
0.5
600
I = 15 A
F
I = 15 A
F
400
200
1600
1000 1200 1400
dI /dt, Current Rate of Change (A/ms)
200 400
600 800
800 1000 1200 1400 1600
dI /dt, Current Rate of Change (A/ms)
200 400
600
F
F
Figure 7. Reverse Recovery Softness Factor
vs. dIF/dt
Figure 8. Reverse Recovered Charge vs. dIF/dt
1000
35
30
25
20
15
10
5
800
600
400
200
0
0
175
165
125
135
145
155
115
100
1
10
0.1
T , Case Temperature (°C)
C
V , Reverse Voltage (V)
R
Figure 10. DC Current Derating Curve
Figure 9. Junction Capacitance vs. Reverse
Voltage
Duty Cycle − Descending Order
0.5
1.0
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
Notes:
Duty Factor: D = t /t
1
2
Peak T = P
x Z
x R
+ T
JA A
q
q
J
DM
JA
Single Pulse
0.01
−2
−1
0
1
−5
−4
−3
10
10
10
10
10
10
10
t, Rectangular Pulse Duration (s)
Figure 11. Normalized Maximum Transient Thermal Impedance
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5
ISL9K3060G3
TEST CIRCUIT AND WAVEFORMS
V
AMPLITUDE AND
GE
G
R
CONTROL dI /dt
F
L
t AND t Control I
1
2
F
dI
dt
t
rr
DUT CURRENT
SENSE
F
I
F
R
t
a
t
b
G
+
V
DD
V
GE
−
MOSFET
t
1
0.25 I
RM
t
2
I
RM
Figure 13. trr Waveforms and Definitions
Figure 12. trr Test Circuit
I = 1 A
L = 40 mH
R < 0.1 W
V
E
= 50 V
AVL
Q = IGBT (BV
DD
2
= 1/2LI [V
/(V
− V )]
R(AVL
R(AVL)
R(AVL) DD
> DUT V
)
1
CES
V
AVL
R
L
I
L
+
V
I
L
CURRENT
SENSE
DD
I V
Q
1
V
DD
DUT
−
t
t
1
t
2
t
0
Figure 15. Avalanche Current and Voltage
Waveforms
Figure 14. Avalanche Energy Test Circuit
STEALTH is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
PAGE 1 OF 1
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