ISL9R460PF2 [ONSEMI]
4 A、600 V STEALTH™ 二极管;
| 型号： | ISL9R460PF2 |
| 厂家： | 
ONSEMI |
| 描述： | 4 A、600 V STEALTH™ 二极管 二极管 |
| 文件： | 总7页 (文件大小：219K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ISL9R460PF2
4 A, 600 V, STEALTHE
Diode
Description
The ISL9R460PF2 is a STEALTH diode optimized for low loss
performance in high frequency hard switched applications. The
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STEALTH family exhibits low reverse recovery current (I ) and
RR
exceptionally soft recovery under typical operating conditions. This
device is intended for use as a free wheeling or boost diode in power
K
supplies and other power switching applications. The low I
and
RR
short ta phase reduce loss in switching transistors. The soft recovery
minimizes ringing, expanding the range of conditions under which the
diode may be operated without the use of additional snubber circuitry.
Consider using the STEALTH diode with an SMPS IGBT to provide
the most efficient and highest power density design at lower cost.
A
Features
• Ultrafast Recovery, t = 17 ns (@ I = 4 A)
RR
F
• Max Forward Voltage, V = 2.4 V (@ T = 25°C)
F
C
• 600 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
Cathode Anode
• This Device is Pb−Free and is RoHS Compliant
TO−220, 2−Lead
CASE 221AS
Applications
• SMPS
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
MARKING DIAGRAM
• Snubber Diode
$Y&Z&3&K
R460PF2
$Y
&Z&3
&K
= ON Semiconductor Logo
= Data Code (Year & Week)
= Lot
R460PF2
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
March, 2019 − Rev. 3
ISL9R460PF2/D
ISL9R460PF2
DEVICE MAXIMUM RATINGS T = 25°C unless otherwise noted
C
Symbol
Parameter
Rating
Unit
V
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
600
RRM
RWM
V
600
V
V
R
600
V
I
Average Rectified Forward Current (T = 108°C)
4
A
F(AV)
C
I
Repetitive Peak Surge Current (20 kHz Square Wave)
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60 Hz)
Power Dissipation
8
A
FRM
I
50
22
A
FSM
P
D
W
mJ
°C
E
Avalanche Energy (0.5 A, 80 mH)
10
AVL
T , T
J
Operating and Storage Temperature Range
−55 to 175
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6 mm) from Case for 10s Package Body for 10s, See Techbrief TB334
T
300
260
°C
°C
T
L
PKG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
ISL9R460PF2
R460PF2
Tube
N/A
N/A
50
TO−220F−2L
ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted
C
Parameter
Conditions
Min
Typ
Max
Unit
OFF STATE CHARACTERISTICS
I
R
Instantaneous Reverse Current
V
R
= 600 V
−
−
−
−
100
1.0
mA
T
T
= 25°C
= 125°C
C
mA
C
ON STATE CHARACTERISTICS
Instantaneous Forward Voltage
V
F
I = 4 A
F
−
−
2.0
1.6
2.4
2.0
V
V
T
T
= 25°C
= 125°C
C
C
DYNAMIC CHARACTERISTICS
Junction Capacitance
SWITCHING CHARACTERISTICS
C
V
R
= 10 V, I = 0 A
−
19
−
pF
J
F
Reverse Recovery Time
I = 1 A, di /dt = 100 A/ms, V = 30 V
−
−
17
19
20
22
ns
ns
t
RR
F
F
R
I = 4 A, dI /dt = 100 A/ms, V = 30
F
F
R
V
I = 4 A,
Reverse Recovery Time
Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
−
−
−
−
−
−
−
17
2.6
22
−
−
−
−
−
−
−
ns
A
t
I
F
RR
di /dt = 200 A/ms,
F
RR
V
R
= 390 V, T = 25°C
C
Q
t
nC
ns
RR
I = 4 A,
77
F
RR
di /dt = 200 A/ms, V = 390 V,
F
R
S
Softness Factor (t /t )
4.2
2.8
100
b
a
T
C
= 125°C
I
Reverse Recovery Current
Reverse Recovered Charge
A
RR
Q
nC
RR
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2
ISL9R460PF2
ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted (continued)
C
Parameter
Conditions
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS
IF = 4 A,
Reverse Recovery Time
Softness Factor (t /t )
−
−
−
54
3.5
4.3
110
500
−
−
−
−
−
ns
t
RR
diF/dt = 400 A/ms, VR = 390 V,
TC = 125°C
S
b
a
I
Reverse Recovery Current
Reverse Recovered Charge
A
RR
Q
nC
RR
dI /dt
M
Maximum di/dt during t
−
A/ms
b
THERMAL CHARACTERISTICS
RθJC
RθJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
−
−
−
−
5.7
70
°C/W
°C/W
TO−220F
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
TYPICAL PERFORMANCE CURVES
T
C
= 25°C unless otherwise noted
8
7
6
5
4
3
2
1
0
600
150°C
25°C
150°C
125°C
100
10
1
100°C
75°C
100°C
25°C
0.1
100
200
300
400
500
600
0
0.5
1
1.5
2
2.5
3
Forward Voltage, V [V]
Reverse Voltage, V [V]
R
F
Figure 1. Forward Current vs Forward Voltage
Figure 2. Reverse Current vs Reverse Voltage
120
90
o
o
V
t
= 390V, T = 125 C
J
V = 390V, T = 125 C
R J
R
80
70
AT di /dt = 200A/μs, 500A/μs, 800A/μs
100
B
F
t
AT I = 8A, 4A, 2A
F
B
60
50
80
60
40
40
30
20
10
0
t
AT I = 8A, 4A, 2A
F
A
20
0
t
AT di /dt = 200A/ms, 500A/ms, 800A/ms
F
A
1
2
3
4
5
6
7
8
100
200
300
400
500
600
700 800
900
1000
Forward Current, I [A]
Current Rate of Change, di /dt [A/ms]
F
F
Figure 3. tA and tB Curves vs Forward Current
Figure 4. tA and tB Curves vs diF/dt
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3
ISL9R460PF2
TYPICAL PERFORMANCE CURVES (continued)
T
C
= 25°C unless otherwise noted
8
7
6
5
4
3
2
8
o
o
V
= 390V, T = 125 C
V = 390V, T = 125 C
R J
R
J
7
6
5
4
3
2
1
I
= 8A
F
di /dt = 800A/ms
F
I
= 4A
F
I
= 2A
F
di /dt = 500A/ms
F
di /dt = 200A/ms
F
1
2
3
4
5
6
7
8
100
200
300
400
500
600
700 800
900
1000
Forward Current, I [A]
Current Rate of Change, di /dt [A/ms]
F
F
Figure 5. Maximum Reverse Recovery Current
vs Forward Current
Figure 6. Maximum Reverse Recovery Current
vs diF/dt
6
180
160
140
120
100
80
o
o
V
= 390V, T = 125 C
J
R
V = 390V, T = 125 C
R J
I
= 8A
F
5
I
= 4A
F
4
3
I
= 8A
I
= 4A
= 2A
F
F
I
= 2A
I
F
F
2
1
60
100 200
300
400
500
600
700 800
900
1000
100 200
300
400
500
600
700 800
900
1000
Current Rate of Change, di /dt [A/ms]
Current Rate of Change, di /dt [A/ms]
F
F
Figure 7. Reverse Recovery Softness
vs diF/dt
Figure 8. Reverse Recovery Charge
vs diF/dt
1800
1600
1400
1200
1000
800
5
4
3
2
1
0
600
400
200
0
0.03
0.1
1.0
10
100
75
100
125
150
175
Reverse Voltage, V [V]
Case Temperature, T [°C]
R
C
Figure 9. Junction Capacitance vs Reverse Voltage
Figure 10. DC Current Derating Curve
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4
ISL9R460PF2
TYPICAL PERFORMANCE CURVES (continued)
T
C
= 25°C unless otherwise noted
2
1
DUTY CYCLE − DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
SINGLE PULSE
PEAK T = P x Z
x R
+ T
qJC C
J
DM
qJC
0.01
−5
−4
−3
−2
−1
0
1
10
10
10
10
10
10
10
t, Rectangular Pulse Duration (s)
Figure 11. Normalized Maximum Transient Thermal Impedance
TEST CIRCUIT AND WAVEFORMS
V
GE
AMPLITUDE AND
R
1
CONTROL di /dt
F
G
t AND t CONTROL I
2
F
Figure 12. ItRR Test Circuit
Figure 13. tRR Waveforms and Definitions
I = 0.5 A
L = 80 mH
R < 0.1 W
V
E
= 200 V
DD
2
= 1/2LI [V
/ (V
− V )]
AVL
R(AVL)
R(AVL) DD
Q = IGBT (B
> DUT V
)
1
VCES
R(AVL)
Figure 14. Avalanche Energy Test Circuit
Figure 15. Avalanche Current and Voltage Waveforms
STEALTH is trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220 Fullpack, 2−Lead / TO−220F−2FS
CASE 221AS
ISSUE O
DATE 29 FEB 2012
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON67438E
TO−220 FULLPACK, 2−LEAD / TO−220F−2FS
PAGE 1 OF 1
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相关型号：
ISL9R460PF2_NL
Rectifier Diode, 1 Phase, 1 Element, 4A, 600V V(RRM), Silicon, TO-220AC, ROHS COMPLIANT, TO-220F, 2 PIN
FAIRCHILD
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