ISL9V2040D3ST [ONSEMI]
IGBT，430V，10A，1.95V，200mJ，DPAK，EcoSPARK® I，N 沟道点火;
| 型号： | ISL9V2040D3ST |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，430V，10A，1.95V，200mJ，DPAK，EcoSPARK® I，N 沟道点火 汽车点火 栅 双极性晶体管 |
| 文件： | 总10页 (文件大小：414K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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October 2013
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3
®
EcoSPARK 200mJ, 400V, N-Channel Ignition IGBT
General Description
Applications
The ISL9V2040D3S, ISL9V2040S3S, and ISL9V2040P3 are the
next generation ignition IGBTs that offer outstanding SCIS
capability in the space saving D-Pak (TO-252), as well as the
industry standard D²-Pak (TO-263) and TO-220 plastic packages.
This device is intended for use in automotive ignition circuits,
specifically as a coil driver. Internal diodes provide voltage clamping
without the need for external components.
•
•
Automotive Ignition Coil Driver Circuits
Coil- On Plug Applications
Features
•
•
•
Space saving D - Pak package available
o
SCIS Energy = 200mJ at T = 25 C
J
Logic Level Gate Drive
EcoSPARK® devices can be custom made to specific clamp
voltages. Contact your nearest Fairchild sales office for more
information.
Formerly Developmental Type 49444
Package
Symbol
COLLECTOR
JEDEC TO-252AA
D-Pak
JEDEC TO-263AB
D²-Pak
JEDEC TO-220AB
E
C
G
R1
R2
GATE
G
G
E
E
EMITTER
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
Device Maximum Ratings T = 25°C unless otherwise noted
A
Symbol
Parameter
Collector to Emitter Breakdown Voltage (I = 1 mA)
Ratings
Units
V
BV
BV
430
24
CER
ECS
C
Emitter to Collector Voltage - Reverse Battery Condition (I = 10 mA)
V
C
E
At Starting T = 25°C, I = 11.5A, L = 3.0mHy
SCIS
200
mJ
mJ
A
SCIS25
J
E
At Starting T = 150°C, I = 8.9A, L = 3.0mHy
SCIS
120
SCIS150
J
I
Collector Current Continuous, At T = 25°C, See Fig 9
10
C25
C
I
Collector Current Continuous, At T = 110°C, See Fig 9
10
A
C110
C
V
Gate to Emitter Voltage Continuous
±10
V
GEM
P
Power Dissipation Total T = 25°C
130
W
D
C
Power Dissipation Derating T > 25°C
0.87
-40 to 175
-40 to 175
300
W/°C
°C
°C
°C
°C
kV
C
T
Operating Junction Temperature Range
J
T
Storage Junction Temperature Range
STG
T
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)
Max Lead Temp for Soldering (Package Body for 10s)
Electrostatic Discharge Voltage at 100pF, 1500Ω
L
T
260
pkg
ESD
4
©2004 Fairchild Semiconductor Corporation
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B4, October 2013
Package Marking and Ordering Information
Device Marking
V2040D
Device
Package
TO-252AA
TO-263AB
TO-220AB
TO-252AA
TO-263AB
Reel Size
330mm
330mm
Tube
Tape Width
16mm
24mm
N/A
Quantity
2500
800
ISL9V2040D3ST
ISL9V2040S3ST
ISL9V2040P3
ISL9V2040D3S
ISL9V2040S3S
V2040S
V2040P
50
V2040D
Tube
N/A
75
V2040S
Tube
N/A
50
Electrical Characteristics T = 25°C unless otherwise noted
A
Symbol
Parameter
Test Conditions
Min
370
390
30
Typ
400
420
-
Max
430
450
-
Units
Off State Characteristics
BV
Collector to Emitter Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
I
R
= 2mA, V = 0,
V
V
V
CER
CES
C
GE
= 1KΩ, See Fig. 15
T = -40 to 150°C
G
J
BV
I
R
= 10mA, V = 0,
GE
= 0, See Fig. 15
T = -40 to 150°C
C
G
J
BV
BV
I = -75mA, V = 0V,
C GE
ECS
T
= 25°C
C
Gate to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
I
= ± 2mA
±12
±14
-
25
1
V
GES
GES
I
V
R
= 250V,
= 1KΩ,
See Fig. 11
T
T
= 25°C
-
-
-
-
µA
mA
CER
CER
C
G
= 150°C
C
I
Emitter to Collector Leakage Current
V
= 24V, See T = 25°C
-
-
-
1
40
-
mA
mA
Ω
ECS
EC
C
Fig. 11
T
= 150°C
-
-
C
R
R
Series Gate Resistance
70
-
1
2
Gate to Emitter Resistance
10K
26K
Ω
On State Characteristics
V
Collector to Emitter Saturation Voltage
I
V
= 6A,
T = 25°C,
C
See Fig. 3
-
-
1.45
1.95
1.9
2.3
V
V
CE(SAT)
C
= 4V
GE
V
Collector to Emitter Saturation Voltage
I
= 10A,
T
C
= 150°C
CE(SAT)
C
V
= 4.5V
See Fig. 4
GE
Dynamic Characteristics
Q
Gate Charge
I
= 10A, V = 12V,
-
12
-
nC
G(ON)
C
CE
V
= 5V, See Fig. 14
GE
V
Gate to Emitter Threshold Voltage
I
V
= 1.0mA,
T
T
= 25°C
1.3
-
-
2.2
1.8
V
V
GE(TH)
C
C
C
= V
CE
GE,
= 150°C
0.75
See Fig. 10
V
Gate to Emitter Plateau Voltage
I
= 10A, V = 12V
-
3.4
-
V
GEP
C
CE
Switching Characteristics
t
Current Turn-On Delay Time-Resistive
Current Rise Time-Resistive
V
V
= 14V, R = 1Ω,
-
-
0.61
2.17
-
-
µs
µs
d(ON)R
CE
L
= 5V, R = 1KΩ
t
GE
G
riseR
T = 25°C
J
t
Current Turn-Off Delay Time-Inductive
Current Fall Time-Inductive
V
V
= 300V, L = 500µHy,
-
-
3.64
2.36
-
-
µs
µs
d(OFF)L
CE
GE
= 5V, R = 1KΩ
t
G
fL
T = 25°C, See Fig. 12
J
SCIS
Self Clamped Inductive Switching
T = 25°C, L = 3.0mHy,
-
-
-
-
200
mJ
J
R
= 1KΩ, V = 5V, See
G
GE
Fig. 1 & 2
Thermal Characteristics
R
Thermal Resistance Junction-Case
TO-252, TO-263, TO-220
1.15
°C/W
θJC
©2004 Fairchild Semiconductor Corporation
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B4, October 2013
Typical Performance Curves
20
20
18
16
14
12
10
8
R
= 1KΩ, V = 5V,V = 14V
GE dd
G
R = 1KΩ, V = 5V,V = 14V
G GE dd
18
16
14
12
10
8
T
= 25°C
J
T
= 25°C
J
T
= 150°C
J
T
= 150°C
J
6
6
4
4
2
2
SCIS Curves valid for V
Voltages of <430V
SCIS Curves valid for V
Voltages of <430V
clamp
clamp
0
0
0
2
4
6
8
10
0
20
40
60
80 100 120 140 160 180 200
, TIME IN CLAMP (µS)
t
L, INDUCTANCE (mHy)
CLP
Figure 1. Self Clamped Inductive Switching
Current vs Time in Clamp
Figure 2. Self Clamped Inductive Switching
Current vs Inductance
2.4
1.60
I
= 10A
CE
I
= 6A
CE
1.55
1.50
V
= 3.7V
GE
V
= 3.7V
GE
2.2
2.0
1.8
1.6
1.4
V
= 4.0V
GE
V
= 4.0V
GE
1.45
1.40
V
= 4.5V
GE
V
= 4.5V
GE
1.35
1.30
1.25
V
= 5.0V
GE
V
= 5.0V
GE
V
= 8.0V
V
= 8.0V
GE
GE
-75
-25
25
75
125
175
-75
-25
25
75
125
175
T , JUNCTION TEMPERATURE (°C)
T , JUNCTION TEMPERATURE (°C)
J
J
Figure 3. Collector to Emitter On-State Voltage vs
Junction Temperature
Figure 4. Collector to Emitter On-State Voltage
vs Junction Temperature
20
20
V
V
= 8.0V
= 5.0V
V
V
V
V
V
= 8.0V
= 5.0V
= 4.5V
= 4.0V
= 3.7V
GE
GE
GE
GE
GE
GE
GE
V
V
V
= 4.5V
= 4.0V
= 3.7V
GE
GE
GE
15
10
5
15
10
5
0
T
= 25°C
J
T
= - 40°C
J
0
0
1.0
2.0
3.0
4.0
0
1.0
2.0
3.0
4.0
V
, COLLECTOR TO EMITTER VOLTAGE (V)
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
CE
Figure 5. Collector to Emitter On-State Voltage vs
Collector Current
Figure 6. Collector to Emitter On-State Voltage
vs Collector Current
©2004 Fairchild Semiconductor Corporation
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B4, October 2013
Typical Performance Curves (Continued)
30
25
20
15
10
5
20
DUTY CYCLE < 0.5%, V = 5V
CE
V
= 8.0V
= 5.0V
= 4.5V
= 4.0V
= 3.7V
GE
PULSE DURATION = 250µs
V
V
V
GE
GE
GE
15
10
5
V
GE
T
= 150°C
J
T
= 25°C
J
T
= 175°C
J
T
= -40°C
J
0
0
0
1.0
2.0
3.0
4.0
1.0
2.0
3.0
4.0
5.0
V
, COLLECTOR TO EMITTER VOLTAGE (V)
V
, GATE TO EMITTER VOLTAGE (V)
CE
GE
Figure 7. Collector to Emitter On-State Voltage vs
Collector Current
Figure 8. Transfer Characteristics
2.4
15.0
V
= V
GE
CE
V
= 4.0V
GE
I
= 1mA
CE
2.2
2.0
1.8
1.6
1.4
1.2
12.5
10.0
7.5
5.0
2.5
0
-50
-25
0
25
JUNCTION TEMPERATURE (°C)
J
50
75
100 125 150 175
25
50
75
100
125
150
175
T , CASE TEMPERATURE (°C)
T
C
Figure 9. DC Collector Current vs Case
Temperature
Figure 10. Threshold Voltage vs Junction
Temperature
10000
1000
100
10
10
I
= 6.5A, V = 5V, R = 1KΩ
GE G
CE
V
= 24V
ECS
Inductive t
OFF
8
6
4
2
Resistive t
OFF
V
= 300V
CES
1
Resistive t
150
V
= 250V
ON
CES
0.1
-50
-25
0
25
50
75
100 125 150 175
25
50
75
100
125
175
T , JUNCTION TEMPERATURE (°C)
T , JUNCTION TEMPERATURE (°C)
J
J
Figure 11. Leakage Current vs Junction
Temperature
Figure 12. Switching Time vs Junction
Temperature
©2004 Fairchild Semiconductor Corporation
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B4, October 2013
Typical Performance Curves (Continued)
8
7
6
5
4
3
2
1
0
1200
I
= 1mA, R = 1.25Ω, T = 25°C
L J
FREQUENCY = 1 MHz
G(REF)
1000
800
V
= 12V
CE
C
IES
600
400
200
0
C
RES
V
= 6V
10
CE
C
OES
0
5
15
20
25
0
5
10
15
20
25
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
Q
, GATE CHARGE (nC)
G
Figure 13. Capacitance vs. Collector to Emitter
Figure 14. Gate Charge
Voltage
415
410
405
400
395
I
= 10mA
CER
T
= - 40°C
J
T
= 175°C
J
390
385
380
375
370
T
= 25°C
J
10
100
, SERIES GATE RESISTANCE (Ω)
1000
2000
3000
R
G
Figure 15. Breakdown Voltage vs. Series Gate Resistance
0
10
0.5
0.2
t
0.1
1
-1
10
P
D
0.05
t
2
0.02
DUTY FACTOR, D = t / t
1
2
0.01
PEAK T = (P X Z
X R ) + T
J
D
θ
JC
θJC C
SINGLE PULSE
-2
10
-5
-4
-3
-2
-1
0
10
10
10
10
10
10
T , RECTANGULAR PULSE DURATION (s)
1
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
©2004 Fairchild Semiconductor Corporation
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B4, October 2013
Test Circuit and Waveforms
L
VCE
R
or
L
LOAD
C
C
RG
RG = 1KΩ
PULSE
+
-
G
DUT
GEN
VCE
DUT
G
5V
E
E
Figure 17. Inductive Switching Test Circuit
Figure 18. t and t
Switching Test Circuit
OFF
ON
V
BV
CES
CE
t
P
V
CE
L
I
AS
V
DD
VARY t TO OBTAIN
P
+
-
R
REQUIRED PEAK I
G
AS
V
DD
V
GE
DUT
t
P
I
0V
AS
0
0.01Ω
t
AV
Figure 19. Unclamped Energy Test Circuit
Figure 20. Unclamped Energy Waveforms
©2004 Fairchild Semiconductor Corporation
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B4, October 2013
SPICE Thermal Model
JUNCTION
th
REV 25 April 2002
ISL9V2040D3S, ISL9V2040S3S, ISL9V2040P3
CTHERM1 th 6 1.3e -2
CTHERM2 6 5 8.8e -4
CTHERM3 5 4 8.8e -3
CTHERM4 4 3 3.9e -1
CTHERM5 3 2 3.6e -1
CTHERM6 2 tl 1.9e -1
RTHERM1
RTHERM2
RTHERM3
RTHERM4
RTHERM5
RTHERM6
CTHERM1
6
RTHERM1 th 6 1.2e -1
RTHERM2 6 5 3.2e -1
RTHERM3 5 4 1.7e -1
RTHERM4 4 3 1.2e -1
RTHERM5 3 2 1.3e -1
RTHERM6 2 tl 2.5e -1
CTHERM2
CTHERM3
CTHERM4
CTHERM5
CTHERM6
5
SABER Thermal Model
SABER thermal model
ISL9V2040D3S, ISL9V2040S3S, ISL9V2040P3
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 1.3e -3
ctherm.ctherm2 6 5 = 8.8e -4
ctherm.ctherm3 5 4 = 8.8e -3
ctherm.ctherm4 4 3 = 3.9e -1
ctherm.ctherm5 3 2 = 3.6e -1
ctherm.ctherm6 2 tl = 1.9e -1
4
3
2
rtherm.rtherm1 th 6 = 1.2e -1
rtherm.rtherm2 6 5 = 3.2e -1
rtherm.rtherm3 5 4 = 1.7e -1
rtherm.rtherm4 4 3 = 1.2e -1
rtherm.rtherm5 3 2 = 1.3e -1
rtherm.rtherm6 2 tl = 2.5e -1
}
tl
CASE
©2004 Fairchild Semiconductor Corporation
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B4, October 2013
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
Sync-Lock™
AccuPower
AX-CAP®*
BitSiC
F-PFS
FRFET®
®
®*
Global Power ResourceSM
GreenBridge
Green FPS
Green FPS e-Series
Gmax
GTO
IntelliMAX
ISOPLANAR
Making Small Speakers Sound Louder
and Better™
MegaBuck
MICROCOUPLER
MicroFET
MicroPak
MicroPak2
PowerTrench®
PowerXS™
Programmable Active Droop
QFET®
TinyBoost®
TinyBuck®
TinyCalc
TinyLogic®
TINYOPTO
TinyPower
TinyPWM
TinyWire
TranSiC
Build it Now
CorePLUS
CorePOWER
CROSSVOLT
CTL
Current Transfer Logic
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficientMax
QS
Quiet Series
RapidConfigure
Saving our world, 1mW/W/kW at a time™
SignalWise
SmartMax
SMART START
Solutions for Your Success
SPM®
TriFault Detect
TRUECURRENT®*
SerDes
ESBC
®
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series
FACT®
UHC®
Ultra FRFET
UniFET
VCX
VisualMax
VoltagePlus
XS™
STEALTH
MillerDrive
SuperFET®
MotionMax
mWSaver®
SuperSOT-3
SuperSOT-6
FAST®
OptoHiT
FastvCore
FETBench
FPS
OPTOLOGIC®
OPTOPLANAR®
SuperSOT-8
SupreMOS®
SyncFET
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
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As used herein:
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intended for surgical implant into the body or (b) support or sustain
life, and (c) whose failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
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Definition
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Rev. I66
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