ISL9V2540S3ST-F085C [ONSEMI]
IGBT, 430V, 15A, 1.77V, 250mJ, D2PAKEcoSPARK® I, N-Channel Ignition;
| 型号： | ISL9V2540S3ST-F085C |
| 厂家： | 
ONSEMI |
| 描述： | IGBT, 430V, 15A, 1.77V, 250mJ, D2PAKEcoSPARK® I, N-Channel Ignition 双极性晶体管 |
| 文件： | 总8页 (文件大小：1423K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
ECOSPARK) Ignition IGBT
250 mJ, 400 V, N-Channel Ignition IGBT
ISL9V2540S3ST-F085C
Features
• SCIS Energy = 250 mJ at T = 25°C
J
• Logic Level Gate Drive
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
www.onsemi.com
Applications
• Automotive Ignition Coil Driver Circuits
• High Current Ignition System
• Coil on Plug Applications
2
D PAK−3
CASE 418AJ
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
MARKING DIAGRAM
Parameter
Symbol
Value
Unit
Collector to Emitter Breakdown Voltage
C
BV
430
V
CER
1
Gate
(I = 1 mA)
Emitter to Collector Voltage − Reverse
BV
24
V
ECS
$Y&Z&3&K
V2540S
F085C
Battery Condition (I = 10 mA)
C
2
4
Collector
Collector
I
= 12.9 A, L = 3.0 mHy,
E
250
150
mJ
mJ
SCIS
GE
SCIS25
R
= 1 kW, T = 25°C (Note 1)
C
3
I
= 10 A, L = 3.0 mHy,
E
SCIS
SCIS150
IC25
Emitter
R
= 1 kW, T = 150°C (Note 2)
GE
C
Collector Current Continuous,
at V = 4.0 V, T = 25°C
15.5
15.3
A
A
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Date Code (Week & Year)
= Lot Code
GE
C
Collector Current Continuous,
at V = 4.0 V, T = 110°C
IC110
GE
C
V2540SF085C = Specific Device Code
Gate to Emitter Voltage Continuous
Power Dissipation Total, T = 25°C
V
10
166.7
1.11
V
W
GEM
PD
PD
C
Collector
Power Dissipation Derating, T > 25°C
W/°C
°C
C
Operating Junction and Storage
Temperature
T , T
J
−40 to
175
STG
Lead Temperature for Soldering
T
300
260
4
°C
°C
kV
kV
L
R
1
Purposes (1/8″ from case for 10 s)
Gate
Reflow soldering according to
JESD020C
T
PKG
R
2
HBM−Electrostatic Discharge Voltage at
100 pF, 1500 W
ESD
ESD
Emitter
CDM−Electrostatic Discharge Voltage
at 1 W
2
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
1. Self Clamped inductive Switching Energy (ESCIS25) of 250 mJ is based on
the test conditions that is starting T = 25°C, L = 3 mHy, I
= 12.9 A,
J
SCIS
V
= 100 V during inductor charging and V = 0 V during time in clamp.
CC
CC
2. Self Clamped inductive Switching Energy (ESCIS150) of 150 mJ is based on
the test conditions that is starting T = 150°C, L = 3 mHy, I = 10 A,
J
SCIS
V
= 100 V during inductor charging and V =0 V during time in clamp.
CC
CC
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
ISL9V2540S3ST−F085C/D
March, 2020 − Rev. 0
ISL9V2540S3ST−F085C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
Junction−to−Case – Steady State (Drain)
R
0.9
°C/W
q
JC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector to Emitter
Breakdown Voltage
BV
BV
BV
BV
I
I
= 2 mA, V = 0 V, R = 1 kW,
370
390
30
400
420
−
430
450
−
V
V
V
V
CER
CES
ECS
GES
CE
J
GE
GE
T = −40 to 150°C
Collector to Emitter
Breakdown Voltage
I
= 10 mA, V = 0 V, R = 0 W,
CE GE GE
T = −40 to 150°C
J
Emitter to Collector
Breakdown Voltage
I = −75 mA, V = 0 V, T = 25°C
CE GE J
Gate to Emitter Breakdown
Voltage
I
=
2 mA
12
14
−
GES
Collector to Emitter Leakage
Current
V
= 175 V, R = 1 kW
T = 25°C
−
−
−
−
25
1
mA
mA
mA
CER
CE
EC
GE
J
T = 150°C
J
Emitter to Collector Leakage
Current
I
V
= 24 V
T = 25°C
J
−
−
1
ECS
T = 150°C
J
−
−
40
−
Series Gate Resistance
Gate to Emitter Resistance
ON CHARACTERISTICS
R
R
−
70
−
W
1
2
10
26
kW
Collector to Emitter Saturation
Voltage
V
V
I
I
= 6 A, V = 4 V, T = 25°C
−
−
1.37
1.77
1.8
2.2
V
V
CE(SAT)
CE
GE
J
Collector to Emitter Saturation
Voltage
= 10 A, V = 4.5 V, T = 150°C
GE J
CE(SAT)
CE
DYNAMIC CHARACTERISTICS
Gate Charge
Q
I
I
= 10 A, V = 12 V, V = 5 V
−
1.3
0.75
−
15.1
−
−
2.2
1.8
−
nC
V
G(ON)
CE
CE
GE
Gate to Emitter Threshold
Voltage
V
= 1 mA, V = V
T = 25°C
J
GE(TH)
CE
CE
GE
T = 150°C
−
J
Gate to Emitter Plateau
Voltage
V
V
= 12 V, I = 12 A
3.1
V
GEP
CE
CE
SWITCHING CHARACTERISTICS
Current Turn−On Delay
Time−Resistive
td
(ON)R
V
J
= 14 V, R = 1 W, V = 5 V, R = 1 kW,
−
0.61
−
ms
CE
L
GE
G
T = 25°C
Current Rise Time−Resistive
t
−
−
2.17
3.64
−
−
rR
Current Turn−Off Delay
Time−Inductive
td
V
J
= 300 V, L = 500 mH, V = 5 V, R = 1 kW,
(OFF)L
CE GE G
T = 25°C
Current Fall Time−Inductive
t
fL
−
2.36
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
†
Device
Package
Shipping
2
ISL9V2540S3ST−F085C
D PAK−3
800 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2
ISL9V2540S3ST−F085C
TYPICAL CHARACTERISTICS
Figure 1. Self Clamped Inductive Switching
Figure 2. Self Clamped Inductive Switching
Current vs. Inductance
Current vs. Time in Clamp
Figure 3. Collector to Emitter On−State Voltage
Figure 4. Collector to Emitter On−State
vs. Junction Temperature
Voltage vs. Junction Temperature
Figure 5. Collector to Emitter On−State
Figure 6. Collector to Emitter On− State
Voltage vs. Collector Current
Voltage vs. Collector Current
www.onsemi.com
3
ISL9V2540S3ST−F085C
TYPICAL CHARACTERISTICS (Continued)
Figure 7. Collector to Emitter On−State
Figure 8. Transfer Characteristics
Voltage vs. Collector Current
Figure 9. DC Collector Current vs. Case
Temperature
Figure 10. Gate Charge
Figure 11. Threshold Voltage vs. Junction
Temperature
Figure 12. Leakage Current vs. Junction
Temperature
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4
ISL9V2540S3ST−F085C
TYPICAL CHARACTERISTICS (Continued)
Figure 13. Switching Time vs. Junction
Temperature
Figure 14. Capacitance vs. Collector to Emitter
Voltage
Figure 15. Break down Voltage vs. Series Resistance
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
www.onsemi.com
5
ISL9V2540S3ST−F085C
TEST CIRCUIT AND WAVEFORMS
L
R
or
L
V
CC
LOAD
C
C
R
G
G
R
= 1 kW
G
PULSE
GEN
+
G
DUT
E
DUT
V
CC
−
5 V
E
Figure 18. tON and tOFF Switching Test Circuit
Figure 17. Inductive Switching Test Circuit
V
CE
BV
CES
t
p
L
V
CE
I
SCIS
C
Vary t to obtain
+
V
CC
p
required peak I
R
SCIS
G
G
V
CC
DUT
−
V
GE
E
t
p
I
0 V
SCIS
0
0.01 W
t
AV
Figure 20. Energy Waveforms
Figure 19. Energy Test Circuit
www.onsemi.com
6
ISL9V2540S3ST−F085C
PACKAGE DIMENSIONS
D2PAK−3 (TO−263, 3−LEAD)
CASE 418AJ
ISSUE E
ECOSPARK is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
ON Semiconductor Website: www.onsemi.com
◊
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