ISL9V3040D3STV [ONSEMI]
IGBT，N 沟道，点火，DPAK，17A，1.58V，300mJ EcoSPARK® I;
| 型号： | ISL9V3040D3STV |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，N 沟道，点火，DPAK，17A，1.58V，300mJ EcoSPARK® I 双极性晶体管 |
| 文件： | 总8页 (文件大小：725K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ISL9V3040D3STV
ECOSPARK) Ignition IGBT
300 mJ, 400 V, N−Channel Ignition IGBT
Features
• SCIS Energy = 300 mJ at T = 25°C
J
www.onsemi.com
• Logic Level Gate Drive
• This Device is Pb−Free and is RoHS Compliant
• AEC−Q101 Qualified and PPAP Capable
Applications
• Automotive Ignition Coil Driver Circuits
• High Current Ignition System
• Coil on Plug Applications
MAXIMUM RATINGS (T = 25°C Unless Otherwise Stated)
J
Parameter
Symbol
Value
Units
4
Collector to Emitter Breakdown Voltage
BV
400
V
CER
(I = 1 mA)
C
2
1
Emitter to Collector Voltage
− Reverse Battery Condition (I = 10 mA)
BV
24
300
170
21
V
mJ
mJ
A
ECS
3
C
DPAK (SINGLE GAUGE)
CASE 369C
ISCIS = 14.2 A, L = 3.0 mHz,
E
SCIS25
R
= 1 Kꢀ (Note 1), T = 25°C
GE
C
ISCIS = 10.6 A, L = 3.0 mHz,
= 1 Kꢀ (Note 2), T = 150°C
E
SCIS150
R
GE
C
MARKING DIAGRAM
Collector Current Continuous,
at V = 4.0 V, T = 25°C
IC25
GE
C
ON
AYWW
ISL
Collector Current Continuous,
at V = 4.0 V, T = 110°C
IC110
17
A
GE
C
3040DG
Gate to Emitter Voltage Continuous
V
10
150
1
V
W
GEM
Power Dissipation Total, T = 25°C
PD
PD
C
ISL3040DG
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
Power Dissipation Derating, T ꢁ 25°C
W/°C
°C
C
Operating Junction and Storage
Temperature
T , T
J
−55 to
175
STG
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
300
°C
Reflow soldering according to JESD020C
T
260
4
°C
PKG
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
HBM−Electrostatic Discharge Voltage
ESD
kV
at100 pF, 1500
ꢀ
CDM−Electrostatic Discharge Voltage at
ESD
2
kV
1
ꢀ
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Self Clamped inductive Switching Energy (ESCIS25) of 300 mJ is based on
the test conditions that is starting T = 25°C, L = 3 mHz, ISCIS = 14.2 A,
J
V
= 100 V during inductor charging and V = 0 V during time in clamp.
CC
CC
2. Self Clamped inductive Switching Energy (ESCIS150) of 170 mJ is based on
the test conditions that is starting T = 150°C, L = 3 mHz, ISCIS = 10.6 A,
J
V
CC
= 100 V during inductor charging and V = 0 V during time in clamp.
CC
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
May, 2019 − Rev. 0
ISL9V3040D3STV/D
ISL9V3040D3STV
THERMAL RESISTANCE RATINGS
Characteristic
Symbol
Max
Units
Junction−to−Case – Steady State (Drain) (Notes 1, 3 and 4)
R
1
°C/W
ꢂ
JC
ELECTRICAL CHARACTERISTICS (T = 25°C Unless Otherwise Specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector to Emitter Breakdown Voltage
BV
BV
BV
I
R
= 2 mA, V = 0 V,
370
400
430
V
V
V
CER
CE
GE
= 1 Kꢀ ꢃ
GE
T = −40 to 150°C
J
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
I
= 10 mA, V = 0 V,
390
30
420
450
CES
CE
GE
R
= 0,
GE
T = −40 to 150°C
J
I
= −75 mA, V = 0 V,
−
−
ECS
CE
GE
T = 25°C
J
Gate to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
BV
I
I
=
2 mA
12
−
14
−
−
25
1
V
GES
GES
V
R
= 175 V,
= 1 Kꢀ
T = 25°C
J
ꢄ A
mA
mA
CER
CE
GE
T = 150°C
J
−
−
Emitter to Collector Leakage Current
I
V
= 24 V
T = 25°C
J
−
−
1
ECS
EC
T = 150°C
J
−
−
40
−
Series Gate Resistance
R
R
−
70
−
ꢀ
ꢀ
1
2
Gate to Emitter Resistance
ON CHARACTERISTICS
10 K
26 K
Collector to Emitter Saturation Voltage
V
V
V
I
= 6 A, V = 4 V
−
−
−
1.25
1.58
1.90
1.65
1.80
2.20
V
V
V
CE(SAT)
CE(SAT)
CE(SAT)
CE
J
GE
T = 25°C
Collector to Emitter Saturation Voltage
Collector to Emitter Saturation Voltage
I
= 10 A, V = 4.5 V
CE GE
T = 150°C
J
I
= 15 A, V = 4.5 V
GE
CE
T = 150°C
J
DYNAMIC CHARACTERISTICS
Gate Charge
Q
I
I
= 10 A, V = 12 V, V = 5 V
−
1.3
0.75
−
17
−
−
2.2
1.8
−
nC
V
G(ON)
CE
CE
GE
Gate to Emitter Threshold Voltage
V
= 1 mA,
= V
T = 25°C
J
GE(TH)
CE
V
CE
CE
GE
T = 150°C
J
−
Gate to Emitter Plateau Voltage
SWITCHING CHARACTERISTICS
Current Turn−On Delay Time−Resistive
V
V
= 12 V, I = 10 A
3.0
V
GEP
CE
td
(ON)R
V
V
= 14 V, R = 1
ꢀ
−
−
0.7
2.1
4
7
ꢄ
s
CE
L
= 5 V, R = 470
ꢀ
GE
G
Current Rise Time−Resistive
t
rR
T = 25°C
J
Current Turn−Off Delay Time−Inductive
Current Fall Time−Inductive
td
V
V
= 300 V, L = 1 mH,
−
−
4.8
2.8
15
15
(OFF)L
CE
= 5 V, R = 470
ꢀ
GE
G
tfL
I
= 6.5 A, T = 25°C
J
CE
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Reel Diameter
330 mm
Tape Width
Qty
2500
ISL9V3040G1
ISL9V3040D3STV
DPAK
(Pb−Free)
16 mm
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
ISL9V3040D3STV
TYPICAL CHARACTERISTICS
Figure 1. Self Clamped Inductive Switching
Figure 2. Self Clamped Inductive Switching
Current vs. Inductance
Current vs. Time in Clamp
Figure 3. Collector to Emitter On−State Voltage
Figure 4. Collector to Emitter On−State Voltage
vs. Junction Temperature
vs. Junction Temperature
Figure 5. Collector to Emitter On−State Voltage
Figure 6. Collector to Emitter On− State Voltage
vs. Collector Current
vs. Collector Current
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3
ISL9V3040D3STV
TYPICAL CHARACTERISTICS (continued)
Figure 7. Collector to Emitter On−State Voltage
Figure 8. Transfer Characteristics
vs. Collector Current
Figure 9. DC Collector Current vs. Case
Temperature
Figure 10. Gate Charge
Figure 11. Threshold Voltage vs. Junction
Temperature
Figure 12. Leakage Current vs. Junction
Temperature
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4
ISL9V3040D3STV
TYPICAL CHARACTERISTICS (continued)
Figure 13. Switching Time vs. Junction
Temperature
Figure 14. Capacitance vs. Collector to Emitter
Voltage
Figure 15. Break down Voltage vs. Series Resistance
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
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5
ISL9V3040D3STV
Figure 17. Inductive Switching Test Circuit
Figure 18. tON and tOFF Switching Test Circuit
Figure 19. Energy Test Circuit
Figure 20. Energy Waveforms
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
4
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE G
2
1
DATE 31 MAY 2023
3
SCALE 1:1
GENERIC
MARKING DIAGRAM*
XXXXXXG
ALYWW
AYWW
XXX
XXXXXG
IC
Discrete
XXXXXX = Device Code
A
= Assembly Location
L
= Wafer Lot
STYLE 1:
STYLE 2:
PIN 1. GATE
2. DRAIN
STYLE 3:
STYLE 4:
STYLE 5:
Y
WW
G
= Year
= Work Week
= Pb−Free Package
PIN 1. BASE
PIN 1. ANODE
2. CATHODE
3. ANODE
PIN 1. CATHODE
2. ANODE
3. GATE
PIN 1. GATE
2. ANODE
3. CATHODE
4. ANODE
2. COLLECTOR
3. EMITTER
3. SOURCE
4. DRAIN
4. COLLECTOR
4. CATHODE
4. ANODE
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLE 6:
PIN 1. MT1
2. MT2
STYLE 7:
PIN 1. GATE
STYLE 8:
PIN 1. N/C
STYLE 9:
PIN 1. ANODE
2. CATHODE
STYLE 10:
PIN 1. CATHODE
2. ANODE
2. COLLECTOR
2. CATHODE
3. GATE
4. MT2
3. EMITTER
4. COLLECTOR
3. ANODE
4. CATHODE
3. RESISTOR ADJUST
4. CATHODE
3. CATHODE
4. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON10527D
DPAK (SINGLE GAUGE)
PAGE 1 OF 1
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