ISL9V5045S3ST [ONSEMI]
IGBT，450V，19A，1.6V，300mJ，DPAKEcoSPARK® I，N 沟道点火;
| 型号： | ISL9V5045S3ST |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，450V，19A，1.6V，300mJ，DPAKEcoSPARK® I，N 沟道点火 汽车点火 栅 双极性晶体管 |
| 文件： | 总11页 (文件大小：601K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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October 2013
ISL9V5045S3S / ISL9V5045S3
EcoSPARK® N-Channel Ignition IGBT
500mJ, 450V
Features
General Description
SCIS Energy = 500mJ at TJ = 25oC
The ISL9V5045S3S and ISL9V5045S3 are next generation
ignition IGBTs that offer outstanding SCIS capability in the
industry standard D²-Pak (TO-263) plastic package. This
device is intended for use in automotive ignition circuits,
specifically as a coil drivers. Internal diodes provide voltage
clamping without the need for external components.
Logic Level Gate Drive
Applications
Automotive Ignition Coil Driver Circuits
EcoSPARK® devices can be custom made to specific
clamp voltages. Contact your nearest Fairchild sales office
for more information.
Coil - On Plug Applications
Package
Symbol
COLLECTOR
EMMITER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
R1
GATE
GATE
EMITTER
R2
COLLECTOR
(FLANGE)
EMITTER
JEDEC TO-263AB
JEDEC TO-262AA
D2-Pak
1
www.fairchildsemi.com
ISL9V5045S3S / ISL9V5045S3 Rev. B
Device Maximum Ratings TA = 25°C unless otherwise noted
Symbol
BVCER
BVECS
ESCIS25
ESCIS150
IC25
Parameter
Collector to Emitter Breakdown Voltage (IC = 1 mA)
Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA)
At Starting TJ = 25°C, ISCIS = 39.2A, L = 650 µHy
At Starting TJ = 150°C, ISCIS = 31.1A, L = 650 µHy
Collector Current Continuous, At TC = 25°C, See Fig 9
Collector Current Continuous, At TC = 110°C, See Fig 9
Gate to Emitter Voltage Continuous
Ratings
Units
V
480
24
V
500
mJ
mJ
A
315
51
IC110
43
A
VGEM
±10
V
PD
Power Dissipation Total TC = 25°C
300
W
Power Dissipation Derating TC > 25°C
2
W/°C
°C
°C
°C
°C
kV
TJ
TSTG
TL
Operating Junction Temperature Range
-40 to 175
-40 to 175
300
Storage Junction Temperature Range
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)
Max Lead Temp for Soldering (Package Body for 10s)
Electrostatic Discharge Voltage at 100pF, 1500Ω
Tpkg
ESD
260
4
Package Marking and Ordering Information
Device Marking
V5045S
Device
Package
TO-263AB
TO-262AA
TO-263AB
Reel Size
330mm
Tube
Tape Width
Quantity
800
ISL9V5045S3ST
ISL9V5045S3
ISL9V5045S3S
24mm
N/A
V5045S
50
V5045S
Tube
N/A
50
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off State Characteristics
BVCER
BVCES
BVECS
Collector to Emitter Breakdown Voltage IC = 2mA, VGE = 0,
RG = 1KΩ, See Fig. 15
420
445
30
450
475
-
480
505
-
V
V
V
TJ = -40 to 150°C
Collector to Emitter Breakdown Voltage IC = 10mA, VGE = 0,
RG = 0, See Fig. 15
TJ = -40 to 150°C
Emitter to Collector Breakdown Voltage IC = -75mA, VGE = 0V,
TC = 25°C
BVGES
ICER
Gate to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
IGES = ± 2mA
±12
±14
-
V
VCER = 320V, TC = 25°C
-
-
-
-
25
1
µA
mA
RG = 1KΩ, See
TC = 150°C
Fig. 11
VEC = 24V, See TC = 25°C
Fig. 11
IECS
Emitter to Collector Leakage Current
-
-
1
40
-
mA
mA
Ω
TC = 150°C
-
-
-
100
-
R1
R2
Series Gate Resistance
Gate to Emitter Resistance
10K
30K
Ω
On State Characteristics
VCE(SAT) Collector to Emitter Saturation Voltage IC = 10A,
VGE = 4.0V
T
C = 25°C,
-
-
1.25
1.47
1.60
1.80
V
V
See Fig. 4
VCE(SAT) Collector to Emitter Saturation Voltage IC = 15A,
VGE = 4.5V
TC = 150°C
2
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ISL9V5045S3S / ISL9V5045S3 Rev. B
Dynamic Characteristics
QG(ON)
Gate Charge
IC = 10A, VCE = 12V,
VGE = 5V, See Fig. 14
-
32
-
nC
VGE(TH)
Gate to Emitter Threshold Voltage
IC = 1.0mA,
VCE = VGE,
See Fig. 10
T
C = 25°C
1.3
-
-
2.2
1.8
V
V
TC = 150°C
0.75
VGEP
Gate to Emitter Plateau Voltage
IC = 10A,
VCE = 12V
-
3.0
-
V
Switching Characteristics
td(ON)R
trR
Current Turn-On Delay Time-Resistive VCE = 14V, RL = 1Ω,
GE = 5V, RG = 1KΩ
TJ = 25°C, See Fig. 12
Current Turn-Off Delay Time-Inductive VCE = 300V, L = 2mH,
-
-
0.7
2.1
4
7
µs
µs
V
Current Rise Time-Resistive
td(OFF)L
tfL
-
-
10.8
2.8
15
15
µs
µs
VGE = 5V, RG = 1KΩ
Current Fall Time-Inductive
TJ = 25°C, See Fig. 12
SCIS
Self Clamped Inductive Switching
TJ = 25°C, L = 650 µH,
RG = 1KΩ, VGE = 5V, See
Fig. 1 & 2
-
-
-
-
500
0.5
mJ
Thermal Characteristics
RθJC
Thermal Resistance Junction-Case
TO-263, TO-262
°C/W
Typical Characteristics
40
40
35
30
25
20
15
10
5
R
= 1KΩ, V = 5V,V = 14V
GE dd
G
R
= 1KΩ, V = 5V,V = 14V
GE dd
G
35
30
25
20
15
10
5
T
= 25°C
J
T
= 25°C
J
T
= 150°C
J
T
= 150°C
J
SCIS Curves valid for V
Voltages of <480V
clamp
SCIS Curves valid for V
Voltages of <480V
clamp
0
0
0
25
50
75
100
125
150
175
200
0
1
2
3
4
5
6
7
8
9
10
t
, TIME IN CLAMP (µS)
L, INDUCTANCE (mHy)
CLP
Figure 1. Self Clamped Inductive Switching
Current vs Time in Clamp
Figure 2. Self Clamped Inductive Switching
Current vs Inductance
3
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ISL9V5045S3S / ISL9V5045S3 Rev. B
Typical Characteristics (Continued)
1.10
1.25
1.20
1.15
1.10
1.05
1.00
I
= 10A
CE
I
= 6A
CE
1.05
1.00
0.95
0.90
0.85
V
= 3.7V
GE
V
= 4.0V
GE
V
= 3.7V
GE
V
= 4.0V
GE
V
= 4.5V
GE
V
= 4.5V
GE
V
= 5.0V
GE
V
= 5.0V
GE
V
= 8.0V
GE
V
= 8.0V
GE
-50
-25
0
25
50
75
100
125
150
175
-50
-25
0
25
50
75
100
125
150
175
T , JUNCTION TEMPERATURE (°C)
T , JUNCTION TEMPERATURE (°C)
J
J
Figure 3. Collector to Emitter On-State Voltage vs
Junction Temperature
Figure 4.Collector to Emitter On-State Voltage vs
Junction Temperature
50
50
V
= 8.0V
= 5.0V
= 4.5V
= 4.0V
= 3.7V
V
= 8.0V
= 5.0V
= 4.5V
= 4.0V
= 3.7V
GE
GE
V
V
GE
GE
40
30
20
10
0
40
30
20
10
0
V
V
GE
GE
V
V
GE
GE
V
V
GE
GE
T
= - 40°C
T
= 25°C
J
J
0
1.0
2.0
3.0
4.0
0
1.0
2.0
3.0
4.0
V
, COLLECTOR TO EMITTER VOLTAGE (V)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
Figure 5. Collector Current vs Collector to Emitter
On-State Voltage
Figure 6. Collector Current vs Collector to Emitter
On-State Voltage
50
50
V
= 8.0V
= 5.0V
= 4.5V
= 4.0V
= 3.7V
GE
DUTY CYCLE < 0.5%, V = 5V
CE
PULSE DURATION = 250µs
V
GE
40
30
20
10
0
V
40
30
20
GE
V
GE
V
GE
T
= 175°C
J
T
= 25°C
J
10
0
T
= 175°C
T
= -40°C
3.5
J
J
0
1.0
2.0
3.0
4.0
1.0
1.5
2.0
2.5
3.0
4.0
4.5
V
, COLLECTOR TO EMITTER VOLTAGE (V)
V
, GATE TO EMITTER VOLTAGE (V)
CE
GE
Figure 7. Collector to Emitter On-State Voltage vs
Collector Current
Figure 8. Transfer Characteristics
4
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ISL9V5045S3S / ISL9V5045S3 Rev. B
Typical Characteristics (Continued)
55
2.0
1.8
1.6
1.4
1.2
1.0
0.8
V
= 4.0V
GE
V
= V
GE
CE
50
45
40
35
30
25
20
15
10
5
I
= 1mA
CE
0
25
-50
-25
0
25
50
75
100
125
150
175
50
75
100
125
150
175
T
, CASE TEMPERATURE (°C)
T , JUNCTION TEMPERATURE (°C)
C
J
Figure 9. DC Collector Current vs Case
Temperature
Figure 10. Threshold Voltage vs Junction
Temperature
10000
1000
100
10
20
I
= 6.5A, V = 5V, R = 1KΩ
GE G
Resistive t
CE
OFF
V
= 24V
ECS
18
16
14
12
10
8
Inductive t
OFF
V
= 300V
CES
V
= 250V
CES
6
1
Resistive t
150
ON
4
0.1
-50
2
-25
0
25
50
75
100
125
150
175
25
50
75
100
125
175
T , JUNCTION TEMPERATURE (°C)
T , JUNCTION TEMPERATURE (°C)
J
J
Figure 11. Leakage Current vs Junction
Temperature
Figure 12. Switching Time vs Junction
Temperature
3000
8
7
6
5
4
3
2
1
0
I
= 1mA, R = 0.6Ω, T = 25°C
G(REF)
L
J
FREQUENCY = 1 MHz
2500
C
2000
1500
1000
500
0
IES
V
= 12V
CE
C
RES
C
OES
V
= 6V
CE
0
5
10
15
20
25
0
10
20
Q , GATE CHARGE (nC)
G
30
40
50
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
Figure 13. Capacitance vs Collector to Emitter
Voltage
Figure 14. Gate Charge
5
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ISL9V5045S3S / ISL9V5045S3 Rev. B
Typical Characteristics (Continued)
475
I
= 10mA
CER
T
= - 40°C
J
470
465
460
455
450
445
440
435
430
T
= 175°C
J
T
= 25°C
J
10
100
1000
5000
R
, SERIES GATE RESISTANCE (Ω)
G
Figure 15. Breakdown Voltage vs Series Gate Resistance
0
10
0.5
0.2
0.1
-1
10
0.05
0.02
t
1
-2
-3
P
D
10
10
0.01
SINGLE PULSE
t
2
DUTY FACTOR, D = t / t
1
2
PEAK T = (P X Z
X R ) + T
θJC C
J
D
θJC
-6
-5
-4
-3
-2
10
10
10
T , RECTANGULAR PULSE DURATION (s)
10
10
1
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
Test Circuits and Waveforms
L
V
R
or
L
CE
LOAD
C
C
R
G
R
= 1KΩ
PULSE
GEN
G
+
G
DUT
V
DUT
CE
G
-
5V
E
E
Figure 17. Inductive Switching Test Circuit
Figure 18. tON and tOFF Switching Test Circuit
6
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ISL9V5045S3S / ISL9V5045S3 Rev. B
Test Circuits and Waveforms (Continued)
V
BV
CES
CE
t
P
V
CE
L
I
AS
V
DD
VARY t TO OBTAIN
P
+
-
R
REQUIRED PEAK I
G
AS
V
DD
V
GS
DUT
t
P
I
0V
AS
0
0.01Ω
t
AV
Figure 19. Energy Test Circuit
Figure 20. Energy Waveforms
7
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ISL9V5045S3S / ISL9V5045S3 Rev. B
SPICE Thermal Model
JUNCTION
th
REV 27 May 2005
ISL9V5045S3S / ISL9V5045S3
CTHERM1 th 6 82e-4
CTHERM2 6 5 105e-4
CTHERM3 5 4 12e-3
CTHERM4 4 3 33e-3
CTHERM5 3 2 55e-3
CTHERM6 2 tl 170e-3
RTHERM1
RTHERM2
RTHERM3
RTHERM4
RTHERM5
RTHERM6
CTHERM1
6
RTHERM1 th 6 3e-3
RTHERM2 6 5 20e-3
RTHERM3 5 4 50e-3
RTHERM4 4 3 60e-3
RTHERM5 3 2 100e-3
RTHERM6 2 tl 127e-3
CTHERM2
CTHERM3
CTHERM4
CTHERM5
CTHERM6
5
SABER Thermal Model
SABER thermal model
ISL9V5045S3S / ISL9V5045S3
template thermal_model th tl
thermal_c th, tl
{
4
3
2
ctherm.ctherm1 th 6 = 82e-4
ctherm.ctherm2 6 5 = 105e-4
ctherm.ctherm3 5 4 = 12e-3
ctherm.ctherm4 4 3 = 33e-3
ctherm.ctherm5 3 2 = 55e-3
ctherm.ctherm6 2 tl = 170e-3
rtherm.rtherm1 th 6 = 3e-3
rtherm.rtherm2 6 5 = 20e-3
rtherm.rtherm3 5 4 = 50e-3
rtherm.rtherm4 4 3 = 60e-3
rtherm.rtherm5 3 2 = 100e-3
rtherm.rtherm6 2 tl = 127e-3
}
tl
CASE
8
www.fairchildsemi.com
ISL9V5045S3S / ISL9V5045S3 Rev. B
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
Sync-Lock™
AccuPower
AX-CAP®*
BitSiC
F-PFS
FRFET®
®
®*
Global Power ResourceSM
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Green FPS
Green FPS e-Series
Gmax
GTO
IntelliMAX
ISOPLANAR
Making Small Speakers Sound Louder
and Better™
MegaBuck
MICROCOUPLER
MicroFET
MicroPak
MicroPak2
PowerTrench®
PowerXS™
Programmable Active Droop
QFET®
TinyBoost®
TinyBuck®
TinyCalc
TinyLogic®
TINYOPTO
TinyPower
TinyPWM
TinyWire
TranSiC
Build it Now
CorePLUS
CorePOWER
CROSSVOLT
CTL
Current Transfer Logic
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficientMax
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Quiet Series
RapidConfigure
Saving our world, 1mW/W/kW at a time™
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SMART START
Solutions for Your Success
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TRUECURRENT®*
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ESBC
®
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FACT®
UHC®
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Datasheet contains the design specifications for product development. Specifications may change
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Rev. I66
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