J309RLRP [ONSEMI]

TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92, CASE 29-11, TO-226AA, 3 PIN, FET RF Small Signal;


型号：	J309RLRP
厂家：	ONSEMI
描述：	TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92, CASE 29-11, TO-226AA, 3 PIN, FET RF Small Signal 放大器晶体管
文件：	总5页 (文件大小：63K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

J309, J310

Preferred Device

JFET VHF/UHF Amplifiers

N−Channel — Depletion

Features

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• Pb−Free Packages are Available*

1 DRAIN

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain−Source Voltage

Vdc

GATE

Gate−Source Voltage

Forward Gate Current

Vdc

mAdc

2 SOURCE

Total Device Dissipation @ T = 25°C

350

2.8

mW/°C

Derate above = 25°C

Junction Temperature Range

Storage Temperature Range

−65 to +125

−65 to +150

°C

stg

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

TO−92

CASE 29−11

STYLE 5

MARKING DIAGRAM

J3xx

AYWW G

J3xx = Device Code

xx = 09 or 10

= Assembly Location

= Year

WW = Work Week

= Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 3 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

March, 2006 − Rev. 1

J309/D

J309, J310

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Symbol

Min

Typ

Max

Unit

Gate−Source Breakdown Voltage

−25

−

Vdc

(BR)GSS

(I = −1.0 mAdc, V = 0)

Gate Reverse Current

GSS

(V = −15 Vdc, V = 0, T = 25°C)

−

−1.0

nAdc

mAdc

(V = −15 Vdc, V = 0, T = +125°C)

Gate Source Cutoff Voltage

Vdc

GS(off)

(V = 10 Vdc, I = 1.0 nAdc)

J309

J310

−1.0

−2.0

−

−4.0

−6.5

ON CHARACTERISTICS

(1)

Zero−Gate−Voltage Drain Current

(V = 10 Vdc, V = 0)

mAdc

Vdc

DSS

J309

J310

−

Gate−Source Forward Voltage

(V = 0, I = 1.0 mAdc)

−

1.0

GS(f)

SMALL−SIGNAL CHARACTERISTICS

Common−Source Input Conductance

Re(y )

mmhos

(V = 10 Vdc, I = 10 mAdc, f = 100 MHz)

J309

J310

−

0.7

0.5

−

Common−Source Output Conductance

(V = 10 Vdc, I = 10 mAdc, f = 100 MHz)

Re(y

)

−

0.25

−

mmhos

Common−Gate Power Gain

(V = 10 Vdc, I = 10 mAdc, f = 100 MHz)

Common−Source Forward Transconductance

(V = 10 Vdc, I = 10 mAdc, f = 100 MHz)

Re(y )

mmhos

Common−Gate Input Conductance

(V = 10 Vdc, I = 10 mAdc, f = 100 MHz)

Re(y )

Common−Source Forward Transconductance

(V = 10 Vdc, I = 10 mAdc, f = 1.0 kHz)

J309

J310

10000

8000

−

20000

18000

Common−Source Output Conductance

(V = 10 Vdc, I = 10 mAdc, f = 1.0 kHz)

−

250

mmhos

Common−Gate Forward Transconductance

(V = 10 Vdc, I = 10 mAdc, f = 1.0 kHz)

J309

J310

−

13000

12000

−

Common−Gate Output Conductance

(V = 10 Vdc, I = 10 mAdc, f = 1.0 kHz)

mmhos

J309

J310

−

100

150

−

Gate−Drain Capacitance

(V = 0, V = −10 Vdc, f = 1.0 MHz)

−

1.8

2.5

Gate−Source Capacitance

(V = 0, V = −10 Vdc, f = 1.0 MHz)

−

4.3

5.0

FUNCTIONAL CHARACTERISTICS

Equivalent Short−Circuit Input Noise Voltage

−

nVń Hz

(V = 10 Vdc, I = 10 mAdc, f = 100 Hz)

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 3.0%.

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J309, J310

ORDERING INFORMATION

†

Device

Package

Shipping

J309

TO−92

1000 Units / Bulk

J309G

TO−92

(Pb−Free)

J310

TO−92

J310G

TO−92

(Pb−Free)

J310RLRP

TO−92

2000 Units / Tape & Ammo Box

J310RLRPG

TO−92

(Pb−Free)

J310ZL1

TO−92

J310ZL1G

TO−92

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

= −ꢀ55°C

= 10 V

T = −ꢀ55°C

f = 1.0 MHz

+ꢀ25 °C

5.0

+ꢀ25 °C

DSS

+ꢀ25 °C

+150°C

−ꢀ55°C

+150°C

+ꢀ25 °C

−ꢀ55°C

+150°C

−1.0

−5.0

−4.0

−3.0

−2.0

1.0

, GATE−SOURCE VOLTAGE (VOLTS)

5.0

4.0

3.0

2.0

− V , GATE−SOURCE VOLTAGE (VOLTS)

− V , GATE−SOURCE CUTOFF VOLTAGE (VOLTS)

DSS

Figure 1. Drain Current and Transfer

Characteristics versus Gate−Source Voltage

Figure 2. Forward Transconductance

versus Gate−Source Voltage

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J309, J310

100 k

10 k

120

1.0 k

7.0

100

4.0

ꢀ2.3 V =

1.0 k

100

GS(off)

= −ꢀ5.7 V =

1.0

0.01

0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100

10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0

I , DRAIN CURRENT (mA)

, GATE SOURCE VOLTAGE (VOLTS)

Figure 3. Common−Source Output

Admittance and Forward Transconductance

versus Drain Current

Figure 4. On Resistance and Junction

Capacitance versus Gate−Source Voltage

|S |, |S

|S |, |S |

12 22

0.85 0.45

0.79 0.39

0.73 0.33

0.67 0.27

0.61 0.21

0.55 0.15

0.060 1.00

0.048 0.98

0.036 0.96

0.024 0.94

0.012 0.92

0.90

6.0

3.0

2.4

1.8

1.2

0.6

= 10 V

= 10 mA

= 25°C

= 10 V

= 10 mA

= 25°C

100

200

300

500 700 1000

100

200

300

500 700 1000

f, FREQUENCY (MHz)

Figure 5. Common−Gate Y Parameter

Magnitude versus Frequency

Figure 6. Common−Gate S Parameter

Magnitude versus Frequency

, q

21 11

q , q

12 22

, q

11 12

, q

21 22

180° 50°

170° 40°

160° 30°

150° 20°

140° 10°

−ꢀ20° 87°

−ꢀ20°

−ꢀ20° 120°

−ꢀ40° 100°

−ꢀ60° 80°

−ꢀ80° 60°

−ꢀ100 ° 40°

−ꢀ120 ° 20°

−ꢀ40° 86°

−ꢀ60°

−ꢀ20°

−ꢀ40°

−ꢀ60°

−ꢀ80°

−ꢀ100 °

−ꢀ80° 85°

−ꢀ100 °

−ꢀ120 ° 84°

−ꢀ140 °

= 10 V

= 10 mA

= 25°C

= 10 mA

= 25°C

−ꢀ160 ° 83°

−ꢀ180 °

130°

0°

100

−ꢀ200 ° 82°

200

300

500 700 1000

100

200

300

500 700 1000

f, FREQUENCY (MHz)

Figure 7. Common−Gate Y Parameter

Phase−Angle versus Frequency

Figure 8. S Parameter Phase−Angle

versus Frequency

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J309, J310

PACKAGE DIMENSIONS

TO−92 (TO−226)

CASE 29−11

ISSUE AL

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R

IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND

BEYOND DIMENSION K MINIMUM.

SEATING

PLANE

INCHES

DIM MIN MAX

MILLIMETERS

MIN

4.45

4.32

3.18

MAX

5.20

5.33

4.19

0.533

1.39

2.66

0.50

−−−

0.175

0.170

0.125

0.016

0.045

0.095

0.015

0.500

0.250

0.080

0.205

0.210

0.165

0.021 0.407

X X

0.055

0.105

0.020

−−− 12.70

−−−

1.15

2.42

0.39

6.35

2.04

−−−

2.93

3.43

−−−

0.105

2.66

2.54

−−−

−−− 0.100

SECTION X−X

0.115

0.135

−−−

STYLE 5:

PIN 1. DRAIN

2. SOURCE

3. GATE

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

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PUBLICATION ORDERING INFORMATION

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For additional information, please contact your

local Sales Representative.

J309/D

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J309RLRP [ONSEMI]

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J30BLBA032LX1