KAC-06040-CBA-JD-BA [ONSEMI]

CMOS Image Sensor;
KAC-06040-CBA-JD-BA
型号: KAC-06040-CBA-JD-BA
厂家: ONSEMI    ONSEMI
描述:

CMOS Image Sensor

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KAC-06040  
2832 (H) x 2128 (V)  
CMOS Image Sensor  
Description  
The KAC−06040 Image Sensor is a high-speed 6 megapixel CMOS  
image sensor in a 1optical format based on a 4.7 mm 5T CMOS  
platform. The image sensor features very fast frame rate, excellent  
NIR sensitivity, and flexible readout modes with multiple regions of  
interest (ROI). The readout architecture enables use of 8, 4, or 2 LVDS  
output banks for full resolution readout of 160 frames per second.  
Each LVDS output bank consists of up to 8 differential pairs  
operating at 200 MHz DDR for a 400 Mbps data rate per pair.  
The pixel architecture allows rolling shutter operation for motion  
capture with optimized dynamic range or global shutter for precise  
still image capture.  
www.onsemi.com  
Table 1. GENERAL SPECIFICATIONS  
Parameter  
Architecture  
Typical Value  
5T Global Shutter CMOS  
6 Megapixels  
Resolution  
Figure 1. KAC−06040 CMOS Image Sensor  
Features  
Aspect Ratio  
4:3  
Pixel Size  
4.7 mm (H) × 4.7 mm (V)  
3024 (H) × 2320 (V)  
2848 (H) × 2144 (V)  
2832 (H) × 2128 (V)  
Total Number of Pixels  
Number of Effective Pixels  
Number of Active Pixels  
Active Image Size  
Global Shutter and Rolling Shutter  
Very Fast Frame Rate  
High NIR Sensitivity  
Multiple Regions of Interest  
Interspersed Video Streams  
13.1 mm (H) × 10.0 mm (V)  
16.65 mm (diag.), 1Optical Format  
Master Clock Input Speed  
Maximum Pixel Clock Speed  
Number of LVDS Outputs  
Number of Output Banks  
Frame Rate, 6 MP  
5 MHz to 50 MHZ  
200 MHz DDR LVDS, 400 Mbps  
64 Differential Pairs  
8, 4, or 2  
Application  
Machine Vision  
Intelligent Transportation Systems  
Surveillance  
1−160 fps 10 bits  
17,000 electrons  
Charge Capacity  
Quantum Efficiency  
KAC−06040−CBA  
KAC−06040−ABA  
40%, 47%, 45% (470, 540, 620 nm)  
53%, 15%, 10% (500, 850, 900 nm)  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 2 of  
this data sheet.  
Read Noise  
(at Maximum LVDS Clock)  
3.4 e rms, Rolling Shutter  
25 e rms, Global Shutter  
Dynamic Range  
74 dB, Rolling Shutter  
57 dB, Global Shutter  
Blooming Suppression  
Image Lag  
> 10,000x  
1.6 electron  
Digital Core Supply  
Analog Core Supply  
Pixel Supply  
2.0 V  
1.8 V  
2.8 V & 3.5 V  
Power Consumption  
Package  
2.3 W for 6 Mp @ 160 fps 10 bits  
267 Pin Ceramic Micro-PGA  
AR Coated, 2-sides  
Cover Glass  
NOTE: All Parameters are specified at T = 40°C unless otherwise noted.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
March, 2016 − Rev. 3  
KAC−06040/D  
KAC−06040  
The image sensor has a pre-configured QHD (4 × 720p,  
Additional features include interspersed video streams  
(dual-video), on-chip responsivity calibration, black  
clamping, overflow pixel for blooming reduction, black-sun  
correction (anti-eclipse), column and row noise correction,  
and integrated timing generation with SPI control, 4:1 and  
9:1 averaging decimation modes.  
16:9) video mode, fully programmable, multiple ROI for  
windowing, programmable sub-sampling, and reverse  
readout (flip and mirror). The two ADCs can be configured  
for 8-bit, 10-bit, 12-bit or 14-bit conversion and output.  
ORDERING INFORMATION  
Table 2. ORDERING INFORMATION − KAC−06040 IMAGE SENSOR  
Part Number  
Description  
Marking Code  
KAC−06040−ABA−JD−BA  
Monochrome, Micro-PGA Package, Sealed Clear Cover Glass with AR  
Coating (Both Sides), Standard Grade.  
KAC−06040−ABA  
Serial Number  
KAC−06040−ABA−JD−AE  
KAC−06040−CBA−JD−BA  
KAC−06040−CBA−JD−AE  
Monochrome, Micro-PGA Package, Sealed Clear Cover Glass with AR  
Coating (Both Sides), Engineering Grade.  
Bayer (RGB) Color Filter Pattern, Micro-PGA Package, Sealed Clear Cover  
Glass with AR Coating (Both Sides), Standard Grade.  
KAC−06040−CBA  
Serial Number  
Bayer (RGB) Color Filter Pattern, Micro-PGA Package, Sealed Clear Cover  
Glass with AR Coating (Both Sides), Engineering Grade.  
1. Engineering Grade samples might not meet final production testing limits, especially for cosmetic defects such as clusters, but also possibly  
column and row artifacts. Overall performance is representative of final production parts.  
Table 3. ORDERING INFORMATION − EVALUATION SUPPORT  
Part Number  
Description  
KAC−06040−AB−A−GEVK  
KAC−06040−CB−A−GEVK  
LENS−MOUNT−KIT−C−GEVK  
Evaluation Hardware for KAC−06040 Image Sensor (Bayer). Includes Image Sensor.  
Evaluation Hardware for KAC−06040 Image Sensor (Monochrome). Includes Image Sensor.  
Lens Mount Kit that Supports C, CS, and F Mount Lenses. Includes IR Cut-filter for Color Imaging.  
See the ON Semiconductor Device Nomenclature document (TND310/D) for a full description of the naming convention  
used for image sensors. For reference documentation, including information on evaluation kits, please visit our web site at  
www.onsemi.com.  
www.onsemi.com  
2
KAC−06040  
DEVICE DESCRIPTION  
Architecture  
3.5 V  
A
LVDS Bank 3  
LVDS Bank 5  
LVDS Bank 7  
3.3 V  
D
2.8 V  
A
2.0 V  
Odd Row ADC, Analog Gain, Black-Sun Correction  
D
1.8 V  
A
88  
8
1D − 1D  
Chip Clock  
Trigger  
0
6
B
G
G
R
B
G
G
R
ResetN  
4000 (H) y 3000 (V)  
4.7 mm Pixel  
Clk1  
CSN  
SCLK  
Serial  
Peripheral  
Interface  
(SPI)  
MOSI  
MISO  
RBFB  
0D − 0D  
0
6
B
G
G
R
B
G
G
R
ADC_Ref1  
(0, 0)  
8
88  
Clk0  
4.02 kW 1%  
Even Row ADC, Analog Gain, Black-Sun Correction  
ADC_Ref2  
VSS 0 V  
LVDS Bank 2  
LVDS Bank 4  
LVDS Bank 6  
Figure 2. Block Diagram  
www.onsemi.com  
3
KAC−06040  
Physical Orientation  
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27  
A
B
C
D
E
LVDS Bank 3  
LVDS Bank 5  
LVDS Bank 7  
LVDS Bank 2  
LVDS Bank 4  
LVDS Bank 6  
AA  
AB  
AC  
AD  
AE  
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27  
Notes:  
1. The center of the pixel array is aligned to the physical package center.  
2. The region under the sensor die is clear of pins enabling the use of a heat sink.  
3. Non-symmetric mounting holes provide orientation and mounting precision.  
4. Non-symmetric pins prevent incorrect placement in PCB.  
5. Letter “F” indicator shows default readout direction relative to package pin 1.  
Figure 3. Package Pin Orientation − Top X-Ray View  
www.onsemi.com  
4
KAC−06040  
Table 4. PRIMARY PIN DESCRIPTION  
Pin  
Name  
RESETN  
CLK_In1  
CLK_In2  
TRIGGER  
SCLK  
Type  
DI  
Description  
AB09  
E07  
Sensor Reset (0 V = Reset State)  
Sensor Input Clk_In1 (5−50 MHz)  
DI  
D08  
DI  
Sensor Input Clk_In2 (Connect to Clk1)  
Trigger Input (Optional)  
AB08  
AA05  
AA06  
AA07  
AA08  
AB05  
D07  
DI  
DI  
SPI Master Clock  
CSN  
DI  
SPI Chip Select (0 V = Selected)  
SPI Master Input, Slave Output  
SPI Master Output, Slave Input  
SPI Register Read Feedback  
MISO  
DO  
DI  
MOSI  
FB  
DO  
DI  
SPI_MS  
ADC_Ref1  
ADC_Ref2  
FLO  
SPI CPOL/CPHA Mode Select  
AA14  
AA15  
AB06  
AB07  
E05  
AO  
AO  
DO  
DO  
DO  
DO  
4.02 kW 1% Resistor between Ref1 & Ref2  
4.02 kW 1% Resistor between Ref1 & Ref2  
Flash Output Sync (Optional)  
MSO  
Mechanical Shutter Output Sync (Optional)  
Frame Enable Reference Output (Optional)  
Line Enable Reference Output (Optional)  
FEN  
E06  
LEN  
1. DI = Digital Input, DO = Digital Output, AO = Analog Output.  
2. Tie unused DI pins to Ground, No Connect (NC) unused DO pins.  
3. By default Clk_In2 should equal Clk_In1 and should be the same source clock.  
4. The RESETN pin has a 62 kW internal pull-up resistor, so if left floating the chip will not be in reset mode.  
5. The TRIGGER pin has an internal 100 kW pull down resistor. If left floating (and at default polarity) then the sensor state will not be affected  
by this pin (i.e. defaults to ‘not triggered’ mode if floated).  
6. All of the DI and DO pins nominally operate at 0 V 2.0 V and are associated with the VDD_DIG power supply.  
7. The SPI_MS pin has an internal 100 kW pull down resistor. If left floating the CPOL/CHPA will be compatible with CPOL = CPHA = 0 or  
CPOL = CPHA = 1.  
Table 5. POWER PIN DESCRIPTION  
Name  
Voltage  
Pins  
Description  
LVDS Output Supply  
VDD_LVDS  
3.3 V D  
C04, C05, C23, C24, D04, D24, E04, E24, AA04, AA24,  
AB04, AB24, AC04, AC05 AC23, AC24  
VDD_DIG  
AVDD_HV  
2.0 V D  
C18, C19, C20, C21, C22, D18, D19, D20, D21, D22, D23,  
E08, E18, E20, E21, E22, AA18, AA20, AA21, AA22, AB18,  
AB19, AB20, AB21, AB22, AB23, AC18, AC19, AC20,  
AC21, AC22, AB15  
Digital Core Supply  
3.5 V A  
C11, D11, E11, AA11, AB11, AC11, C10, D10, E10, AA10,  
AB10, AC10  
Pixel Supply 1  
Vref_P  
2.8 V A  
1.8 V A  
0 V  
C13, D13, E13, AA13, AB13, AC13  
C17, D16, D17, E17, AA17, AB16, AB17, AC17  
E09  
Pixel Supply 2  
AVDD_LV  
Vpixel_low  
Analog Low Voltage Supply  
Pixel Supply 3. Combine with VSS for  
normal operation. Can be pulsed for  
Extended Dynamic Range Operation.  
VSS  
0 V  
NA  
A02, A14, A26, B14, C03, C06, C12, C14, C25, D03, D12,  
D14, D25, E03, E12, E19, E23, E25, AA03, AA12, AA19,  
AA23, AA25, AB03, AB12, AB14, AB25, AC03, AC06,  
AC12, AC14, AC25, AD14, AE02, AE14, AE26, D15, E15,  
AA09  
Sensor Ground Reference  
No Connect  
A01, E14, E16, C09, D09, D05, D06, AA16, AC09  
Unused and test-only pins. These  
pins must be floated.  
www.onsemi.com  
5
KAC−06040  
Table 6. LVDS PIN DESCRIPTION  
Pin  
E01  
E02  
D01  
D02  
C01  
C02  
B01  
B02  
A03  
B03  
A04  
B04  
A05  
B05  
A06  
B06  
Name  
Description  
Pin  
C07  
C08  
A07  
B07  
A08  
B08  
A09  
B09  
A10  
B10  
A11  
B11  
A12  
B12  
A13  
B13  
Name  
Description  
Pin  
C15  
C16  
A15  
B15  
A16  
B16  
A17  
B17  
A18  
B18  
A19  
B19  
A20  
B20  
A21  
B21  
Name  
Description  
Pin  
A22  
B22  
A23  
B23  
A24  
B24  
A25  
B25  
B27  
B26  
C27  
C26  
D27  
D26  
E27  
E26  
Name  
Description  
1DCLK+  
1DCLK−  
1DATA0+  
1DATA0−  
1DATA1+  
1DATA1−  
1DATA2+  
1DATA2−  
1DATA3+  
1DATA3−  
1DATA4+  
1DATA4−  
1DATA5+  
1DATA5−  
1DATA6+  
1DATA6−  
3DCLK+  
3DCLK−  
3DATA0+  
3DATA0−  
3DATA1+  
3DATA1−  
3DATA2+  
3DATA2−  
3DATA3+  
3DATA3−  
3DATA4+  
3DATA4−  
3DATA5+  
3DATA5−  
3DATA6+  
3DATA6−  
5DCLK+  
5DCLK−  
5DATA0+  
5DATA0−  
5DATA1+  
5DATA1−  
5DATA2+  
5DATA2−  
5DATA3+  
5DATA3−  
5DATA4+  
5DATA4−  
5DATA5+  
5DATA5−  
5DATA6+  
5DATA6−  
7DCLK+  
7DCLK−  
7DATA0+  
7DATA0−  
7DATA1+  
7DATA1−  
7DATA2+  
7DATA2−  
7DATA3+  
7DATA3−  
7DATA4+  
7DATA4−  
7DATA5+  
7DATA5−  
7DATA6+  
7DATA6−  
Bank 1  
Bank 3  
Bank 5  
Bank 7  
LVDS Clock  
LVDS Clock  
LVDS Clock  
LVDS Clock  
Bank 1  
Bank 3  
Bank 5  
Bank 7  
LVDS Data  
LVDS Data  
LVDS Data  
LVDS Data  
Pin  
Name  
Description  
Pin  
Name  
Description  
Pin  
Name  
Description  
Pin  
Name  
Description  
AA01  
AA02  
AB01  
AB02  
AC01  
AC02  
AD01  
AD02  
AE03  
AD03  
AE04  
AD04  
AE05  
AD05  
AE06  
AD06  
0DCLK+  
0DCLK−  
0DATA0+  
0DATA0−  
0DATA1+  
0DATA1−  
0DATA2+  
0DATA2−  
0DATA3+  
0DATA3−  
0DATA4+  
0DATA4−  
0DATA5+  
0DATA5−  
0DATA6+  
0DATA6−  
AC07  
AC08  
AE07  
AD07  
AE08  
AD08  
AE09  
AD09  
AE10  
AD10  
AE11  
AD11  
AE12  
AD12  
AE13  
AD13  
2DCLK+  
2DCLK−  
2DATA0+  
2DATA0−  
2DATA1+  
2DATA1−  
2DATA2+  
2DATA2−  
2DATA3+  
2DATA3−  
2DATA4+  
2DATA4−  
2DATA5+  
2DATA5−  
2DATA6+  
2DATA6−  
AC15  
AC16  
AE15  
AD15  
AE16  
AD16  
AE17  
AD17  
AE18  
AD18  
AE19  
AD19  
AE20  
AD20  
AE21  
AD21  
4DCLK+  
4DCLK−  
4DATA0+  
4DATA0−  
4DATA1+  
4DATA1−  
4DATA2+  
4DATA2−  
4DATA3+  
4DATA3−  
4DATA4+  
4DATA4−  
4DATA5+  
4DATA5−  
4DATA6+  
4DATA6−  
AE22  
AD22  
AE23  
AD23  
AE24  
AD24  
AE25  
AD25  
AD26  
AD27  
AC26  
AC27  
AB26  
AB27  
AA26  
AA27  
6DCLK+  
6DCLK−  
6DATA0+  
6DATA0−  
6DATA1+  
6DATA1−  
6DATA2+  
6DATA2−  
6DATA3+  
6DATA3−  
6DATA4+  
6DATA4−  
6DATA5+  
6DATA5−  
6DATA6+  
6DATA6−  
Bank 0  
Bank 2  
Bank 4  
Bank 6  
LVDS Clock  
LVDS Clock  
LVDS Clock  
LVDS Clock  
Bank 0  
Bank 2  
Bank 4  
Bank 6  
LVDS Data  
LVDS Data  
LVDS Data  
LVDS Data  
1. All LVDS Data and Clock lines must be routed with 100 W differential transmission line traces.  
2. All the traces for a single LVDS Bank should be the same physical length to minimize skew between the clock and data lines.  
3. In 2 Bank mode, only LVDS banks 0 and 1 are active.  
4. In 4 Bank mode, only LVDS bank 0, 1, 2, and 3 are active.  
5. Float the pins of unused LVDS Banks to conserve power.  
6. Unused pins in active banks (due to ADC bit depth < 14) are automatically tri-stated to save power, but these can also be floated.  
www.onsemi.com  
6
KAC−06040  
IMAGING PERFORMANCE  
Table 7. TYPICAL OPERATIONAL CONDITIONS  
(Unless otherwise noted, the Imaging Performance Specifications are measured using the following conditions.)  
Description  
Light Source  
Condition  
Continuous Red, Green and Blue LED Illumination  
Measured Die Temperature: 40°C and 27°C  
16.6 ms (1400d LL, Register 0201h)  
Notes  
1
Temperature  
Integration Time  
Readout Mode  
Clamps  
Dual-Scan, Global Shutter, 320 MHz, PLL2  
Column/Row Noise Correction Active, Frame Black Level Clamp Active  
10 bit  
ADC Bit Depth  
Analog Gain  
Unity Gain or Referred Back to Unity Gain  
1. For monochrome sensor, only green LED used.  
Table 8. KAC−12040−ABA CONFIGURATION (MONOCHROME)  
Wavelength  
(nm)  
Sampling  
Plan  
Temperature  
Tested at (5C)  
Description  
Symbol  
QE  
Nom.  
Units  
Test  
Peak Quantum Efficiency  
%
Design  
27  
MAX  
Green  
NIR1  
NIR2  
550  
850  
900  
52  
15  
9.0  
ke*  
Lux @ s  
Responsivity  
Responsivity  
83  
Design  
Design  
27  
27  
20  
21  
7.3  
V
Lux @ s  
Table 9. KAC−12040−CBA CONFIGURATION (BAYER RGB)  
Wavelength  
(nm)  
Sampling  
Plan  
Temperature  
Tested at (5C)  
Description  
Symbol  
QE  
Nom.  
Units  
Test  
Peak Quantum Efficiency  
470  
540  
620  
850  
900  
42  
47  
44  
16  
9.8  
%
Design  
27  
MAX  
Green  
NIR1  
NIR2  
ke*  
Lux @ s  
Responsivity  
Responsivity  
Blue  
Green  
Red  
18  
36  
39  
Design  
Design  
27  
27  
20  
21  
Blue  
Green  
Red  
1.6  
3.1  
3.4  
V
Lux @ s  
www.onsemi.com  
7
 
KAC−06040  
Table 10. PERFORMANCE SPECIFICATIONS ALL CONFIGURATIONS  
Sampling  
Plan  
Temperature  
Tested at (5C)  
Description  
Symbol  
Min  
Nom.  
Max  
Units  
Test  
Notes  
Photodiode Charge  
Capacity  
PNe  
17  
ke  
Die  
27, 40  
16  
Read Noise  
ne T  
3.4 RS/GR DS  
3.7 RS/GR TS  
25 GS DS/TS  
e rms  
Die  
27  
8
Total Pixelized  
Noise  
TPN  
DR  
3.6 RS/GR DS  
3.9 RS/GR TS  
25 GS DS/TS  
e rms  
Die  
Die  
27  
27  
19  
Dynamic Range  
74 RS/GR DS  
73 RS/GR TS  
57 GS DS/TS  
dB  
3
Column Noise  
Row Noise  
C
R
0.4 RS/GR DS/TS  
2.4 GS DS/TS  
e rms  
Die  
Die  
27  
27  
9
5
6
N
N
0.4 RS/GR DS  
0.7 RS/GR TS  
2.7 GS DS/TS  
e rms  
10  
Dark Field Local  
Non-Uniformity  
Floor  
DSNU_flr  
PRNU_1  
PRNU_2  
NL  
1.3 RS/GR DS  
1.7 RS/GR TS  
10 GS DS/TS  
e rms  
Die  
Die  
Die  
Die  
Die  
27, 40  
27, 40  
27, 40  
27, 40  
27, 40  
1
2
4
1
1
2
7
Bright Field Local  
Photoresponse  
Non-Uniformity  
1.1 Mono  
1.5 Bayer  
% rms  
% pp  
%
Bright Field Global  
Photoresponse  
Non-Uniformity  
3.7 Mono  
3.4 Bayer  
3
Maximum  
Photoresponse  
Non-Linearity  
5.4  
0.3  
11  
12  
Maximum Gain  
Difference between  
Outputs  
DG  
%
Photodiode Dark  
Current  
I
I
6.6  
1490  
1.6  
e/p/s  
e/p/s  
Die  
Die  
40  
40  
13  
14  
8
4
PD  
Storage Node Dark  
Current  
VD  
Image Lag  
Lag  
e
Design  
Design  
27, 40  
27  
15  
7
2
Black-Sun  
Anti-Blooming  
X
15  
> 10,000  
W/cm  
13  
9
AB  
xllumSat  
Parasitic Light  
Sensitivity  
PLS  
728  
Design  
Design  
Design  
27  
27  
27  
6
Dual-Video WDR  
140 RS  
120 GS  
dB  
dB  
10, 11  
12, 11  
Pulsed Pixel WDR  
(GS Only)  
100  
NOTE: RS = Rolling Shutter Operation Mode, GS = Global Shutter Operation Mode, GR = Global Reset, DS = Dual−Scan, TS = Tri−Scan  
1. Measured per color, worst of all colors reported.  
2. Value is over the range of 10% to 90% of photodiode saturation, Green response used.  
3. Uses 20LOG (PNe / ne T).  
4. Photodiode dark current made negligible.  
5. Column Noise Correction active.  
6. Row Noise Correction active.  
7. Measured at 70% illumination.  
8. Storage node dark current made negligible.  
9. GSE (Global Shutter Efficiency) = 1 − 1 / PLS.  
10.Min vs Max integration time at 30 fps.  
11. WDR measures expanded exposure latitude from linear mode DR.  
12.Min/Max responsivity in a 30 fps image.  
13.Saturation Illumination referenced to a 3 line time integration.  
www.onsemi.com  
8
KAC−06040  
TYPICAL PERFORMANCE CURVES  
Monochrome with Microlens  
Figure 4. Monochrome QE (with Microlens)  
Color (Bayer RGB) with Microlens  
Figure 5. Bayer QE (with Microlens)  
www.onsemi.com  
9
KAC−06040  
Angular Quantum Efficiency  
For the curves marked “Horizontal”, the incident light angle is varied along the wider array dimension.  
For the curves marked “Vertical”, the incident light angle is varied along the shorter array dimension.  
Figure 6. Monochrome Relative Angular QE (with Microlens)  
Figure 7. Bayer Relative Angular QE (with Microlens)  
www.onsemi.com  
10  
KAC−06040  
Dark Current vs. Temperature  
NOTE: “Dbl” denotes an approximate doubling temperature for the dark current for the displayed temperature range.  
Figure 8. Dark Current vs. Temperature  
Power vs. Frame Rate  
The most effective method to set the frame rate is to use  
vertical blanking (Register 01F1h). Unnecessary chip  
operations are suspended during vertical blanking  
conserving significant power consumption and also  
minimizing the image storage time on the storage node when  
in Global Shutter Operation. Tri−scan can reach higher  
frame rates, but consumes more power at all frame rates. It  
is recommended use Dual−Scan unless the frame rate  
required can only be reached with Tri−Scan. The LVDS  
clock is 1/2 the PLL2 clock frequency.  
Figure 9. Dual−Scan Power vs. Frame Rate, 10 bit Mode  
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11  
KAC−06040  
Figure 10. Tri−Scan Power vs. Frame Rate, 10 bit Mode  
Power and Frame Rate vs. ADC Bit Depth  
parameters impacting the line time, Tri−Scan only has  
significant benefit at 10 bit operation. At 8 bit operation the  
LVDS readout time dominates the line time; and at 12 and  
14 bit the ADC time dominates the line time and the pixel  
time is not significant. But at 10 bit operation Tri−Scan can  
almost halve the line time at the cost of additional power  
consumption.  
Increasing the ADC bit depth impacts the frame rate by  
changing the ADC conversion time. The following figure  
shows the power and Frame rate range for several typical  
cases. For optimum image quality and power consumption  
the PLL2 and vertical blanking have been optimized for  
each bit depth and target frame rate. Because of the different  
Figure 11. Dual−Scan ADC Bit Depth Impact on Frame Rate and Power  
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KAC−06040  
Figure 12. Tri−Scan vs. Dual−Scan Power  
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13  
KAC−06040  
DEFECT DEFINITIONS  
Table 11. OPERATION CONDITIONS FOR DEFECT TESTING  
Description  
Condition  
Notes  
Operational Mode  
10 bit ADC, 8 LVDS outputs, Global Shutter and Rolling Shutter modes, Dual−Scan,  
Black Level Clamp on, Column/Row Noise Correction on, 1x Analog Gain, 1x Digital Gain  
Pixels per Line  
Lines per Frame  
Line Time  
2832  
2128  
6.875 ms  
Frame Time  
8.25 ms  
Photodiode Integration Time  
Storage Readout Time  
Temperature  
33 ms  
7.85 ms  
40°C and 30°C  
Light Source  
Continuous Red, Green and Blue LED Illumination (Green only for monochrome sensor)  
Nominal Operating Voltages and Timing, PLL1 = 320 MHz, PLL2 = 410 MHz  
Operation  
Table 12. DEFECT DEFINITIONS FOR TESTING  
Description  
Definition  
Limit  
Test  
Notes  
Dark Field Defective Pixel  
30°C  
40°C  
60  
4
1, 4, 5  
RS: Defect 20 dn  
GS: Defect 180 dn  
RS: Defect 30 dn  
GS: Defect 240 dn  
Bright Field Defective Pixel  
Cluster Defect  
Defect 12% from Local Mean  
60  
11  
5
2, 5  
3
A group of 2 to 10 contiguous defective pixels, but  
no more than 3 adjacent defects horizontally.  
Column/Row Major Defect  
A group of more than 10 contiguous defective pixels  
along a single column or row.  
0
0
0
Dark Field Faint Column/Row Defect  
Bright Field Faint Column/Row Defect  
1. RS = Rolling Shutter, GS = Global Shutter.  
RS: 3 dn Threshold  
GS: 10 dn Threshold  
17  
18  
1
1
RS: 12 dn Threshold  
GS: 18 dn Threshold  
2. For the color devices, all bright defects are defined within a single color plane, each color plane is tested.  
3. Cluster defects are separated by no less than two good pixels in any direction.  
4. Rolling Shutter Dark Field points are dominated by photodiode integration time, Global Shutter Dark Field defects are dominated by the  
readout time.  
5. The net sum of all bright and dark field pixel defects in rolling and global shutter are combined and then compared to the test limit.  
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KAC−06040  
TEST DEFINITIONS  
Test Regions of Interest  
Image Area ROI:  
Active Area ROI:  
Pixel (0, 0) to Pixel (2847, 2143)  
Pixel (8, 8) to Pixel (2839, 2135)  
Only the Active Area ROI pixels are used for performance and defect tests.  
88  
8
B
G
G
R
B
G
G
R
2832 (H) y 2128 (V)  
4.7 mm Pixel  
8,8  
0,0  
B
G
G
R
8
88  
Figure 13. Regions of Interest  
Tests  
The highest sub-ROI average (Maximum Signal) and the  
lowest sub-ROI average (Minimum Signal) are then used in  
the following formula to calculate PRNU_2.  
1) Dark Field Local Non-Uniformity Floor (DSNU_flr)  
This test is performed under dark field conditions.  
A 4 frame average image is collected. This image is  
partitioned into 180 sub-regions of interest, each of which is  
190 by 178 pixels in size. For each sub-region the standard  
deviation of all its pixels is calculated. The dark field local  
non-uniformity is the largest standard deviation found from  
Max. Signal * Min. Signal  
PRNU_2 + 100 @ ǒ  
Units : % pp  
Ǔ
Active Area Signal  
4) Dark Field Defect Test  
This test is performed under dark field conditions.  
The sensor is partitioned into 390 sub regions of interest,  
each of which is 128 by 128 pixels in size. In each region of  
interest, the median value of all pixels is found. For each  
region of interest, a pixel is marked defective if it is greater  
than or equal to the median value of that region of interest  
plus the defect threshold specified in the Defect Definition  
Table section.  
all the sub regions of interest. Units: e rms (electrons rms).  
2) Bright Field Local Photoresponse Non-Uniformity  
(PRNU_1)  
The sensor illuminated to 70% of saturation (700 dn). In  
this condition a 4 frame average image is collected. From  
this 4 frame average image a 4 frame average dark image is  
subtracted. The Active Area Standard Deviation is the  
standard deviation of the resultant image and the Active  
Area Signal is the average of the resultant image.  
5) Bright Field Defect Test  
This test is performed with the imager illuminated to  
a level such that the output is at approximately 700 dn.  
The average signal level of all active pixels is found.  
The bright and dark thresholds are set as:  
Active Area Standard Deviation  
PRNU_1 + 100 @ ǒ  
Ǔ
Active Area Signal  
Units : % rms  
Dark Defect Threshold = Active Area Signal Threshold  
Bright Defect Threshold = Active Area Signal Threshold  
3) Bright Field Global Non-Uniformity (PRNU_2)  
This test is performed with the sensor uniformly  
illuminated to 70% of saturation (700 dn), a 4 frame  
average image is collected and a 4 frame averaged dark  
image is subtracted. The resultant image is partitioned into  
180 sub regions of interest, each of which is 190 by  
178 pixels in size. The average signal level of each sub  
regions of interest (sub-ROI) is calculated.  
The sensor is then partitioned into 390 sub regions of  
interest, each of which is 128 by 128 pixels in size. In each  
region of interest, the average value of all pixels is found.  
For each region of interest, a pixel is marked defective if it  
is greater than or equal to the median value of that region of  
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15  
KAC−06040  
interest plus the bright threshold specified or if it is less than  
or equal to the median value of that region of interest minus  
the dark threshold specified.  
detected, typically several orders of magnitude greater than  
the photodiode integration time.  
7) Black-Sun Anti-Blooming  
Example for bright field defective pixels:  
A typical CMOS image sensor has a light response profile  
that goes from 0 dn to saturation (1023 dn for KAC−06040  
in 10 bit ADC mode) and, with enough light, back to 0 dn.  
The sensor reaching 0 dn at very bright illumination is often  
called the “Black-sun” artifact and is undesirable. Black-sun  
artifact is typically the dominant form of anti-blooming  
image distortion. For the KAC−06040 the Black-sun artifact  
threshold is measured at the onset of saturation distortion,  
not at the point where the output goes to 0 dn. To first order  
the onset of black-sun artifact for the KAC−06040 is not  
proportional to the integration time or readout time.  
The sensor is placed in the dark at unity gain and  
illuminated with a 532 nm laser with the intensity of about  
Average value of all active pixels is found to be 700 dn  
Lower defect threshold: 700 dn 12% = 84 dn  
A specific 128 × 128 ROI is selected:  
Median of this region of interest is found to be  
690 dn.  
Any pixel in this region of interest that is  
(690 − 84 dn) in intensity will be marked  
defective.  
Any pixel in this region of interest that is  
(690 − 84 dn) in intensity will be marked  
defective.  
All remaining 299 sub regions of interest are analyzed  
2
26 W/cm at the center of the sensor. The laser is strong  
for defective pixels in the same manner.  
enough to make the center of the laser spot below 1020 dn  
without any ND filters. ND filters are added to adjust the  
laser intensity until the signal in the region at the center of  
the spot increases to > 1020 dn.  
6) Parasitic Light Sensitivity (PLS)  
Parasitic Light Sensitivity is the ratio of the light  
sensitivity of the photodiode to the light sensitivity of the  
storage node in Global Shutter. There is no equivalent  
distortion in Rolling Shutter. A low PLS value can provide  
distortion of the image on the storage node by the scene  
during readout.  
This illumination intensity at this ND filter is recorded  
2
(W/cm ) as the Black-Sun Anti-blooming.  
The ‘xIlumSat’ unit is calculated using and integration  
time of 100 msec.  
Photodiode Responsivity  
Exposing the sensor to very strong illumination for  
extended periods of time will permanently alter the sensor  
performance in that localized region.  
PLS +  
(UnitlessRatio)  
Storage Node Responsivity  
GSE (Global Shutter Efficiency) is a related unit.  
1
PLS  
8) Read Noise  
GSE + ǒ1 * Ǔ%  
This test is performed with no illumination and one line of  
integration time. The read noise is defined as one standard  
deviation of the frequency histogram containing the values  
of all pixels after the excessively deviant pixels ( three  
standard deviations) are removed.  
Detailed Method: Photodiode Responsivity:  
The sensor is set in global shutter serial mode (integration  
time not overlapping readout) and the FLO signal is used to  
control a 550 nm normal incident (or large f# focused)  
illumination source so that the sensor is illuminated only  
during photodiode integration time (not illuminated during  
readout time). The integration time is not critical but should  
be large enough to create a measurable mean during this  
time. A 16 frame-average illuminated photodiode image is  
recorded. A 16 frame-average dark frame using the same  
sensor settings is captured and is subtracted from the  
illuminated image.  
9) Column Noise  
After all rows are averaged together. Shading (low  
frequency change wrt column address) is removed.  
A frequency histogram is constructed of the resulting  
column values. The column noise is the standard deviation  
of the frequency histogram of the column values. This  
Metric includes both temporal and FPN.  
10) Row Noise  
Detailed Method: Storage Node Responsivity:  
All columns are averaged together. Shading (low  
frequency change wrt row address) is removed. A frequency  
histogram is constructed of the resulting row values.  
The row noise is the standard deviation of the frequency  
histogram of the row values. This Metric includes both  
temporal and FPN.  
The sensor is set to a special characterization mode where  
the PD signal is discarded and does not impact the storage  
node. A long total frame time (storage node exposure time)  
is used to increase the storage node signal. A 16  
frame-average dark frame is captured. The sensor is  
illuminated by the same 550 nm incident light source used  
for the photodiode responsivity. A 16 frame-average  
illuminated photodiode image is recorded; the dark frame  
image is subtracted from this. The integration time is not  
critical but should be set such that a significant response is  
11) Maximum Photoresponse Non-Linearity  
The photoresponse non-linearity is defined as the  
deviation from the best fit of the sensor response using 70%  
of saturation and zero signal as the reference points.  
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KAC−06040  
The different signal levels are determined by varying the  
14) Storage Node Dark Current  
integration time. The sensor saturation level is (1023-dark  
offset). The dark offset is subtracted from the image for the  
The storage node dark current is measured in global  
shutter read out mode using a special timing mode to prevent  
the photodiode dark current from being transferred to the  
storage node. In global shutter mode, the integration time of  
the storage node is the time it takes to read out a frame. The  
sensor analog gain is set to 2:  
following M  
and L  
.
AVG  
AVG  
The integration time is varied until the integration time  
required to reach the 70% saturation is determined.  
M
AVG  
= the active array mean at the 70% saturation  
el−per−DN (gain=2)  
integration time.  
Storage Node Dark Current + Aver. Signal (DN) @  
0.138 seconds  
The integration is set to 1/14 (5% exposure point).  
L
= meant at the 5% exposure point.  
where ‘average signal (DN)’ is the average of all pixels in  
the sensor array and ‘el-per-DN (gain=2)’ is measured on  
each sensor using the photon transfer method.  
AVG  
PRNL (@ 5% saturation) = ((L  
100  
/M  
AVG AVG  
) (14/1) −1)  
15) Lag  
12) Maximum Gain Difference between Outputs  
Lag is measured as the number of electrons left in the  
photodiode after readout when the sensor is illuminated at  
70% of Photodiode Charge Capacity.  
The LVDS outputs contain no gain or offset error since  
these are purely digital segmentations. The predominant  
output mismatch comes from the pixel array readout  
segmentation. The sensor contains two ADC banks and four  
channels of analog line stores in its highest frame rate  
configuration, Tri−Scan. The sensor is factory calibrated to  
match the gain differences between all four possible gain  
Analog gain is set to 8. With no illumination a 64 average  
dark image is recorded (Dark_ref). The ‘el-per-DN’ is  
measured using the photon transfer method.  
Illumination is adjusted blink every other frame such that  
the mean image output is 70% of the Photodiode Charge  
Capacity for even frames, and with no illumination for odd  
frames. A 64 frame average of Odd Dark Frames is recorded  
as Dark_Lag.  
th  
channels. The gain variations are manifest as an every 4  
row gain pattern. In tri−scan, and an even/odd row gain  
difference in Dual−Scan. The sensor is factory calibrated to  
match the four possible row gains. This test is performed in  
Tri−Scan mode to test the worst case gain error including all  
possible 4 row gains after the calibration has been applied.  
The sensor is illuminated at 70% of saturation. The entire  
(
)
Lag + Dark_Lag * Dark_Ref @ el−per−DN  
Units : Electrons rms  
th  
test frame ROI into 4 groups of every 4 row. The first row  
16) Photodiode Charge Capacity  
group(average) is used as a reference and the following three  
row groups are compared to the first. The largest error is  
reported.  
The sensor analog gain is reduced to < 1 to prevent ADC  
clipping at 1023 dn. The ‘el-per-DN’ is measured using the  
photon transfer method. The sensor is illuminated at a light  
level 1.5x the illumination at which the pixel output no  
longer linearly changes with illumination level.  
The Photodiode Charge Capacity is equal to the average  
signal (DN) el-per-DN. Units: electrons rms.  
Second Row Average  
ǒ
* 1Ǔ@ 100  
* 1Ǔ@ 100  
* 1Ǔ@ 100  
First Row Average  
Third Row Average  
First Row Average  
ǒ
17) Dark Field Faint Column/Row Defect  
Fourth Row Average  
First Row Average  
A 4 frame average, no illumination image is acquired at  
one line time of integration. Major defective pixels are  
removed (> 5 Sigma). All columns or rows are averaged  
together. The average of the local ROI of 128 columns or  
rows about the column/row being tested is determined. Any  
columns/rows greater than the local average by more than  
the threshold are identified.  
ǒ
13) Photodiode Dark Current  
The photodiode dark current is measured in rolling shutter  
read out mode using 105 ms integration time and an analog  
gain = 8. The value is converted to electrons/pix/sec using  
the formula:  
18) Bright Field Faint Column/Row Defect  
el−per−DN (gain=8)  
Photodiode Dark Current + Aver. Signal (DN) @  
A 4 frame average, 70% illumination image is acquired at  
one line time of integration. Major defective pixels are  
removed (> 5 Sigma). All columns or rows are averaged  
together. The average of the local ROI of 128 columns or  
rows about the column/row being tested is determined. Any  
columns/rows greater than the local average by more than  
the threshold are identified.  
0.105 seconds  
where ‘average signal (DN)’ is the average of all pixels in  
the sensor array, and ‘el-per-DN (gain=8)’ is measured on  
each sensor using the photon transfer method.  
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KAC−06040  
19) Total Pixelized Noise  
20) Responsivity ke /lux-sec  
This test is performed with no illumination and one line of  
integration time. A single image is captured including both  
Temporal and Fixed Pattern Noise (FPN). A spatial low pass  
filter is applied to remove shading and excessively deviant  
pixels ( three standard deviations) are removed. The Total  
Pixelized Noise is defined as one standard deviation of the  
frequency histogram.  
This number is calculated by integrating the  
multiplication of the sensor QE by the human photopic  
response assuming a 3200K light source with a QT100 IR  
filter. This is a sharp 650 nm cutoff filter. If the IR filter is  
removed a higher response value will result.  
21) Responsivity V/lux-sec  
Voltage levels are not output from the sensor. This value  
uses the pixel output before analog gain to match the ADC  
input range. Including the ADC matching gain will result in  
a larger responsivity value.  
OPERATION  
This section is a brief discussion of the most common  
features and functions assuming default conditions. See the  
KAC−06040 User Guide for a full explanation of the sensor  
operation modes, options, and registers.  
All SPI reads are to an even address, all SPI writes are to an  
odd address.  
Sensor States  
Figure 14 shows the sensor states, see the KAC−06040  
User Guide for detailed explanation of the States.  
Register Address  
The last bit of any register address is a Read/Write bit.  
Most references in this document refer to the Write address.  
RESETN low or  
RESET  
reset Reg 4060h  
<35µ s  
STANDBY  
<2µ s  
150µ s  
CONFIG  
WAKE−UP  
(50 ms)  
<2µ s  
Slave Integration Mode  
<50µ s  
TRIG_WAIT  
TRIGGER Active Edge  
IDLE  
End of  
acquisition  
<2µ s  
RUNNING mode OR  
TRIGGER pin  
<50µ s  
End of acquisition AND  
IDLE mode AND  
No TRIGGER  
EXT_INT  
TRIGGER Inactive Edge  
RUNNING  
READOUT  
Figure 14. Sensor State Diagram  
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KAC−06040  
Encoded Syncs  
the following Figure 15. This is performed for each of the  
8 LVDS output banks providing frame, line, and output  
synchronization. See the KAC−06040 User Guide for  
additional detail on LVDS and Encoded Sync output.  
To facilitate system acquisition synchronization the  
KAC−06040 places synchronization words (SW) at the  
beginning and at the end of each output row as indicated in  
V Blanking Period  
SOF  
SOL  
Data  
EOL  
EOF  
V Blanking Period  
Line Length (LL)  
Figure 15. Encoded Frame Syncs  
Line Time  
This Datasheet presumes the recommended startup script  
that is defined in the KAC−06040 User Guide has been  
applied. The KAC−06040 defaults to Dual−Scan mode. In  
this mode the LVDS data readout overlaps the pixel readout  
and ADC conversion time. The Pixel read time is fixed, and  
the ADC Conversion Time is dependent on the ADC bit  
depth selected. The LVDS time will be dependent on the  
PLL2 frequency selected. Depending on the ADC bit depth  
and the PLL2 frequency the LVDS readout or the (Pixel +  
ADC conversion) may limit the minimum possible line  
time. The Line Time is not impacted by the selection of  
Rolling Shutter or Global Shutter mode.  
conversion time and LVDS readout time are similar in size.  
For full resolution this corresponds to 8 LVDS bank and 10  
bit ADC bit depth. In Tri−Scan mode the longest of the three  
components will define the minimum line time.  
The KAC−06040 architecture always outputs two rows at  
once, one row from the top ADC, and one from the bottom  
ADC. Each ADC then divides up the pixel into 1 4  
parallel pixel output LVDS Banks. The default is 4 output  
banks per ADC for a total of 8 parallel pixel outputs to  
minimize the LVDS data output time. Since the sensor  
always outputs 2 rows at a time the timing and registers are  
based on a Line Time (LT) or Line Length (LL) where one  
LT = the time to readout 2 rows in parallel (one even row and  
one odd row).  
Tri−scan mode can be used in for shorter line times and  
faster frame rates (at elevated power consumption).  
Tris−scan is of most value when the Pixel time and ADC  
Line  
10 bit ADC n+1  
Pixel n+1  
8 Bank LVDS Output n  
Line n Time = Line Length register (0200h)  
Figure 16. Dual−Scan Line Time Relationship  
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KAC−06040  
Pixel (Line n+2)  
10 bit ADC (n+1)  
8 Bank LVDS (n)  
Min Line Time  
Figure 17. Tri−Scan Line Time Relationship  
Frame Time  
By default the Integration Phase overlaps the Readout and  
Frame Wait Phases. If the Integration Phase is larger than the  
Readout + Frame Wait time, then the Integration Phase will  
determine the video frame rate. Otherwise the frame rate  
will be set by the Readout + Frame Wait time. In other words,  
if the programmed integration time is larger than the  
minimum readout time (and vertical blanking) then extra  
vertical blanking will be added and the frame rate will slow  
to accommodate the requested integration time.  
The frame time is defined in units of Line Time. 1 Line  
Time unit = 2 output rows. To first-order the frame rate is not  
directly impacted by selection of Global Shutter, Rolling  
Shutter, Dual-Scan, or Tri-Scan.  
The Frame Time is made up of three phases:  
1. Integration Phase  
2. Readout Phase  
3. Frame Wait Phase (Vertical Blanking, V  
)
BLANK  
Integration Phase Frame m  
Integration Phase Frame m+1  
Integration Phase Frame m+2  
Frame  
Wait  
Frame  
Wait  
Readout Phase Frame m  
Readout Phase Frame m+1  
Video Frame Time = Readout + Wait  
Figure 18. Default Frame Time Configuration (Frame A)  
If the Integration Phase is less than the Readout Phase then the start of integration is automatically delayed to minimize the  
storage time and dark current.  
Integration Phase Frame m  
Integration Phase Frame m+1  
Integration Phase Frame m+2  
Frame  
Wait  
Frame  
Wait  
Readout Phase Frame m  
Readout Phase Frame m+1  
Video Frame Time = Integration Time  
Figure 19. Frame Time with Extended Integration Time  
If the Readout Phase (+ V  
) is less than the  
See the KAC−06040 User Guide for detailed calculation  
of the Integration Phase, Readout Phase, and Frame Wait.  
To first-order the Readout Phase is equal to the number of  
rows row_time.  
BLANKING  
Integration Phase, then the readout occurs as soon the  
integration is complete to minimize the storage time and  
dark current.  
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KAC−06040  
Global Shutter Readout  
Global Shutter readout provides the maximum precision  
for freezing scene motion. Any motion artifacts will be  
100% defined by an ideal integration time edge. Every pixel  
in the array starts and stops integration at the same time.  
Figure 20 illustrates a Global Shutter Frame readout  
assuming the recommended Start-up Script defined in the  
KAC−06040 User Guide (8 LVDS banks, Dual-Scan,  
8.75 ms line time). The Frame Wait Phase is not shown due  
to its small default size (1 LL) and for clarity.  
Integration of Next Frame Overlaps  
Readout of Previous Frame  
Integration Time  
Frame Readout  
Time/Col Address Axis  
Effective Frame Time (Video) = Readout Time  
Trigger Pin: True  
Figure 20. Illustration of Frame Time for Global Shutter Readout  
Global Shutter readout mode is selected using Bits [1:0]  
of Register 01D1h.  
Images can be initiated by setting and holding the  
TRIGGER input pin or by placing the sensor into  
RUNNING mode by writing 03d to register 4019h. If the  
TRIGGER input pin is true when at the start of the  
integration time for the next frame then the sensor will  
complete an additional frame integration and readout. In the  
case shown in Figure 20 two frames will be output.  
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KAC−06040  
Rolling Shutter Readout  
The KAC−06040 high speed Rolling Shutter readout  
provides the maximum dynamic range while still providing  
excellent motion capture. In Rolling Shutter the readout  
more closely matches a film camera shutter. Each row of the  
image receives the same integration time, but each row starts  
and ends at a different time as the shutter travels from the top  
of the array to the bottom. In the Figure 21 frame time  
illustration this ‘moving shutter’ displays as a sloped edge  
for the blue pixel array region, just as the readout edge is  
sloped.  
The Figure 21 illustration shows a 2 frame output  
sequence using the external TRIGGER pin.  
Integration of Next Frame Overlaps  
Readout of Previous Frame  
Integration Time  
Frame Readout  
Time/Col Address Axis  
Effective Frame Time (Video) = Readout Time  
Trigger Pin: True  
Figure 21. Illustration of Frame Time for Rolling Shutter Readout  
Rolling Readout mode can be selected using Bits [1:0] of  
Register 01D1h.  
Images can be initiated by setting and holding the  
TRIGGER input pin or by placing the sensor into  
RUNNING mode by writing 03d to register 4019h. If the  
TRIGGER input pin is True when at the start of the  
integration time for the next frame then the sensor will  
complete an additional frame integration and readout.  
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KAC−06040  
8 BANK LVDS DATA READOUT  
LVDS Banks  
The KAC−06040 provides 8 parallel pixel banks, each  
consisting of 8 LVDS differential pairs (7 data pairs + 1clock  
pair). This allows the output of 8 pixels per LVDS clock  
period. All 7 data pairs, of each bank, are used only in 14 bit  
operation mode. By default only 5 data pairs are used for  
10 bit mode (D4 D0). The unused pairs are held in  
low-power high impedance mode.  
Bank 3  
Bank 5  
Bank 7  
Bank 3  
Bank 5  
Bank 7  
Bank 3  
Bank 5  
Bank 7  
Pixel Array  
Pixel Array  
Pixel Array  
2 Bank Mode  
4 Bank Mode  
8 Bank Mode  
Bank 2  
Bank 4  
Bank 6  
Bank 2  
Bank 4  
Bank 6  
Bank 2  
Bank 4  
Bank 6  
Figure 22. LVDS Bank Labeling  
The number of output banks used is independent of the  
ADC bit depth chosen. By default the KAC−06040 uses all  
8 output banks for maximum frame rate. If technical  
restrictions prevent the use of 8 LVDS banks, the sensor can  
be programmed to use 4 or 2 banks, however this can result  
in reduced frame rate and reduction of image quality. It is  
recommended that 8 banks be used when possible. Only the  
8 bank option is discussed in detail in this specification, see  
the KAC−06040 User Guide for additional detail on 4 and 2  
bank mode.  
In order to minimize the LVDS clock rate (and power) for  
a given data rate the pixels are output in DDR (Double Data  
Rate) where the MSB is always sent first (on rising edge) and  
the LSB second (falling edge) This is not programmable.  
Ports per LVDS Bank  
The MSB comes out first on the falling edge, followed by  
the LSB on the net rising edge.  
Table 13. NUMBER OF LVDS PAIRS (PORTS) USED VS. BIT DEPTH  
Bit Depth  
Edge of DATA CLK  
Falling (MSB Nibble)  
Rising (LSB Nibble)  
Falling (MSB Nibble)  
Rising (LSB Nibble)  
Falling (MSB Nibble)  
Rising (LSB Nibble)  
Falling (MSB Nibble)  
Rising (LSB Nibble)  
Data0  
D7  
Data1  
D8  
Data2  
D9  
Data3  
D10  
D3  
Data4  
D11  
D4  
Data5  
D12  
D5  
Data6  
D13  
D6  
14 bits  
D0  
D1  
D2  
12 bits  
10 bits  
8 bits  
D6  
D7  
D8  
D9  
D10  
D4  
D11  
D5  
HiZ  
HiZ  
HiZ  
HiZ  
HiZ  
HiZ  
D0  
D1  
D2  
D3  
D5  
D6  
D7  
D8  
D9  
HiZ  
HiZ  
HiZ  
HiZ  
D0  
D1  
D2  
D3  
D4  
D4  
D5  
D6  
D7  
HiZ  
HiZ  
D0  
D1  
D2  
D3  
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23  
KAC−06040  
8 Bank Pixel Order  
The KAC−06040 always processes two rows at a time.  
Even row decodes are sent to the bottom ADC and LVDS  
output banks (0, 2, 4, 6). Odd rows are sent to the top ADC  
and LVDS banks (1, 3, 5, 7). The ROI must be (and is  
internally forced to) an even size and always starting on an  
even row decode.  
The rows are read out progressively left to right (small  
column address to large). Eight pixels are sent out of the chip  
at once, one pixel per LVDS bank per LVDS clock cycle.  
Pixel Readout order:  
4. Each LVDS Bank outputs one pixel per clock  
cycle, so 4 pixels of each row are output each full  
LVDS clock cycle, two rows in parallel for  
8 pixels per clock cycle total.  
5. The pixels are sent out from left to right  
(low column number to high column number).  
So the first 4 pixels are sent out on clock cycle 1,  
and the next 4 pixels to the right are sent out on  
clock cycle 2.  
6. To conserve the number of wires per port,  
the 10 bits per pixel are sent out DDR (Dual Data  
Rate) over 5 ports. On the falling edge the upper  
5 MSB bits are sent out, and on the rising edge the  
lower 5 bits LSB are sent out. Completing one full  
LVDS clock cycle and one set of eight pixels.  
1. Two rows are selected, the even row is sent to  
the bottom ADC and the odd row to the top ADC.  
2. Each ADC converts its row of pixel data at once  
and stores the result in a line buffer.  
3. At default settings there are 4 output LVDS banks  
for each ADC.  
Bank 3  
Bank 5  
Bank 7  
First CLK−DATA  
Pulse  
0
0
1
1
2
2
3
3
4
4
5
6
6
7
7
Row 2n +1  
Row 2n  
5
Second CLK−DATA  
Pulse  
Bank 2  
Bank 4  
Bank 6  
Figure 23. Pixel Readout Order Diagram  
Table 14. PIXEL READOUT ORDER TABLE  
LVDS Bank  
Bank 0  
Bank 2  
Bank 4  
Bank 6  
Bank 1  
Bank 3  
Bank 5  
Bank 7  
Row  
Pixel Number  
2n (Even)  
2n (Even)  
2n (Even)  
2n (Even)  
2n+1 (Odd)  
2n+1 (Odd)  
2n+1 (Odd)  
2n+1 (Odd)  
0
1
2
3
0
1
2
3
1
4
5
6
7
4
5
6
7
2
8
9
12  
13  
14  
15  
12  
13  
14  
15  
4
16  
17  
18  
19  
16  
17  
18  
19  
5
10  
11  
8
9
10  
11  
3
LVDS Clock Cycle  
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24  
KAC−06040  
De-Serializer Settings  
Figure 24 shows the data stream of one LVDS bank for  
10 bit resolution.  
Data serialization is fixed at 2 cycle DDR for all bit depths.  
Data output order is MSB first on the falling edge, and LSB  
following on the rising edge.  
The SOL/SOF synchronization words are sent out of each  
LVDS bank before the first valid pixel data from that bank.  
Each bank outputs all 4 syncs of the SOF or SOL.  
And each of the active LVDS banks each output all 4 sync  
codes for the EOL/EOF.  
Four pixel values per synchronization word are embedded  
into the video stream per LVDS bank.  
Dclk0  
Data0 D5 D0 D5 D0 D5 D0 D5 D0 D5 D0 D5 D0 D5 D0 D5 D0  
Data1 D6 D1 D6 D1 D6 D1 D6 D1 D6 D1 D6 D1 D6 D1 D6 D1  
Data2 D7 D2 D7 D2 D7 D2 D7 D2 D7 D2 D7 D2 D7 D2 D7 D2  
Data3 D8 D3 D8 D3 D8 D3 D8 D3 D8 D3 D8 D3 D8 D3 D8 D3  
Data4 D9 D4 D9 D4 D9 D4 D9 D4 D9 D4 D9 D4 D9 D4 D9 D4  
MSB LSB MSB LSB MSB LSB MSB LSB MSB LSB MSB LSB MSB LSB MSB LSB  
D5 D0 D5 D0 D5 D0 D5 D0 D5 D0 D5 D0  
D6 D1 D6 D1 D6 D1 D6 D1 D6 D1 D6 D1  
D7 D2 D7 D2 D7 D2 D7 D2 D7 D2 D7 D2  
D8 D3 D8 D3 D8 D3 D8 D3 D8 D3 D8 D3  
D9 D4 D9 D4 D9 D4 D9 D4 D9 D4 D9 D4  
MSB LSB MSB LSB MSB LSB MSB LSB MSB LSB MSB LSB  
SW1  
SW2  
SW3  
SW4  
P0  
P1  
P2  
P3  
PN−1  
PN  
SW1  
SW2  
SW3  
SW4  
t
Synchronized Word on 10 bits  
Data on 10 bits  
Synchronized Word on 10 bits  
Figure 24. Data Stream of One LVDS Bank for 10 bits ADC Resolution  
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25  
 
KAC−06040  
REGISTER DEFINITION  
Table 15. REGISTER DEFINITION  
Reset Value  
Hex/Dec  
16 bit Address (Hex)  
0001  
0009  
0011  
SPI State  
Any  
Any  
Any  
Any  
Any  
Any  
Any  
Any  
Any  
Any  
Any  
Any  
Any  
Any  
Any  
Any  
Any  
Any  
Any  
Any  
Any  
Any  
Any  
Any  
Any  
Any  
Any  
Any  
Any  
Any  
Any  
Any  
Any  
Any  
Any  
Any  
Any  
Any  
Any  
Any  
Any  
Any  
Any  
Any  
Register Name  
Frame A ROI y1  
0d  
2144d  
0d  
Frame A ROI h1  
Frame A ROI x1  
0019  
0021  
0029  
0031  
0039  
0041  
0049  
0051  
0059  
0061  
0069  
0071  
0079  
0081  
0089  
0091  
0099  
00A1  
00A9  
00E9  
00F1  
00F9  
0101  
0109  
0111  
2848d  
0d  
Frame A ROI w1  
Frame A sub-ROI y2  
Frame A sub-ROI h2  
Frame A sub-ROI x2  
Frame A sub-ROI w2  
Frame A sub-ROI y3  
Frame A sub-ROI h3  
Frame A sub-ROI x3  
Frame A sub-ROI w3  
Frame A sub-ROI y4  
Frame A sub-ROI h4  
Frame A sub-ROI x4  
Frame A sub-ROI w4  
Frame A Decimation  
Frame A Video Blanking  
Frame A Integration Rows  
Frame A Integration Sub−Row  
Frame A Black Level  
Frame A Gain  
0d  
0d  
0d  
0d  
0d  
0d  
0d  
0d  
0d  
0d  
0d  
0011h  
0d  
3430d  
0d  
10d  
001Fh  
344d  
1456d  
136d  
2576d  
0d  
Frame B ROI y1  
Frame B ROI h1  
Frame B ROI x1  
Frame B ROI w1  
Frame B sub-ROI y2  
Frame B sub-ROI h2  
Frame B sub-ROI x2  
Frame B sub-ROI w2  
Frame B sub-ROI y3  
Frame B sub-ROI h3  
Frame B sub-ROI x3  
Frame B sub-ROI w3  
Frame B sub-ROI y4  
Frame B sub-ROI h4  
Frame B sub-ROI x4  
Frame B sub-ROI w4  
Frame B Decimation  
Frame B Video Blanking  
Frame B Integration Rows  
Frame B Integration Sub−Row  
Frame B Black Level  
Frame B Gain  
0d  
0119  
0d  
0121  
0129  
0131  
0139  
0141  
0149  
0151  
0159  
0161  
0169  
0171  
0179  
0181  
0189  
0191  
0d  
0d  
0d  
0d  
0d  
0d  
0d  
0d  
0d  
0011h  
0d  
3430d  
0d  
10d  
001Fh  
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26  
 
KAC−06040  
Table 15. REGISTER DEFINITION (continued)  
Reset Value  
Hex/Dec  
FC10h  
0500h  
00AAh  
0000h  
0d  
16 bit Address (Hex)  
01D1  
01D9  
01E1  
01E9  
01F1  
01F9  
0201  
0209  
0211  
SPI State  
CONFIG Only  
CONFIG or IDLE  
CONFIG or IDLE  
CONFIG or IDLE  
CONFIG or IDLE  
CONFIG or IDLE  
CONFIG or IDLE  
CONFIG or IDLE  
CONFIG or IDLE  
CONFIG or IDLE  
Any  
Description  
Config1  
Config2  
Analog/Digital Power Mode  
Dual-Video Repetition  
Vertical Blanking  
3431d  
1400d  
002Dh  
0000h  
0000h  
0000h  
0000h  
0000h  
0000h  
0000h  
0000h  
0300h  
2877h  
0861h  
1C32h  
10B8h  
20C7h  
0000h  
536d  
Fixed Frame Period  
Line Length (LL)  
ADC Bit Depth  
FLO Edge Delay  
0219  
0708  
0710  
0718  
0720  
0730  
0738  
2059  
2099  
20A1  
2449  
2479  
2481  
2499  
24A1  
24B9  
24C1  
24C9  
24D1  
24D9  
24E1  
24E9  
24F1  
24F9  
2501  
2559  
2561  
25C1  
2619  
4000  
4008  
4010  
4019  
4021  
MSO Edge Delay  
Sensor Type FB  
Any  
Temperature Sensor FB  
General Feedback  
Any  
Any  
Minimum LL FB  
Any  
User OTP1 FB  
Any  
User OTP2 FB  
CONFIG Only  
CONFIG Only  
CONFIG Only  
CONFIG Only  
Any  
Output Bank Select 1  
PLL1 Setting  
PLL2 Setting  
Sub-LVDS Enable  
BSC Clamp Threshold A  
BSC Clamp Threshold B  
Test Pattern Control 1  
Test Pattern Control 2  
Companding Slope 1 Length  
Companding Slope 2 Length  
Companding Slope 3 Length  
Companding Slope 4 Length  
Companding Slope 5 Length  
Companding Slope 6 Length  
Companding Slope 1/2 Gain  
Companding Slope 3/4 Gain  
Companding Slope 5/6 Gain  
Companding Slope 7 Gain  
Defect Avoidance Threshold  
Defect Avoidance Enable  
Encoded Sync Config  
Output Bank Select 2  
Chip Revision Code  
Chip ID Code MSB  
Chip ID Code LSB  
Any  
CONFIG or IDLE  
CONFIG or IDLE  
CONFIG Only  
CONFIG Only  
CONFIG Only  
CONFIG Only  
CONFIG Only  
CONFIG Only  
CONFIG Only  
CONFIG Only  
CONFIG Only  
CONFIG Only  
Any  
202d  
101d  
101d  
101d  
101d  
420d  
0083h  
038Fh  
0FBFh  
1F9Fh  
7804h  
003Fh  
0003h  
000Bh  
4100h  
0011h  
0080h  
0000h  
0000h  
Any  
CONFIG or IDLE  
CONFIG Only  
Any  
Any  
Any  
Any  
Set Sensor State  
CONFIG or IDLE  
OTP Address  
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27  
KAC−06040  
Table 15. REGISTER DEFINITION (continued)  
Reset Value  
Hex/Dec  
0000h  
0000h  
0000h  
0000h  
16 bit Address (Hex)  
SPI State  
Description  
OTP Write Data  
Command_Done_FB  
OTP Read Data  
Soft Reset  
4029  
4031  
4041  
4061  
CONFIG or IDLE  
CONFIG or IDLE  
CONFIG or IDLE  
CONFIG or IDLE  
NOTES: SPI State (the Sensor State from which the register can be set):  
1. “Any”: Can be written from any state (including RUNNING).  
2. “CONFIG or IDLE”: These registers can be changed in IDLE or CONFIG states.  
3. “CONFIG Only”: Sensor must be in CONFIG state to set these registers.  
4. Only Register 4018h and 4060h may be set when the sensor is in STANDBY state.  
5. FB = Feedback, a read−only register that provides some error or status.  
NOTES: Decimal, hexadecimal, binary values:  
1. “b” denotes a binary number, a series of bits: MSB is on the left, LSB is on the right.  
2. “h” or “hex” denotes a hexadecimal number (Base 16, 1−9, A−F). The letters in a hex number are always capitalized.  
3. “d” denotes a decimal number.  
4. Note that “0” and “1” are the same value in all number base systems and sometimes the base notation is omitted.  
The KAC−06040 features an embedded microprocessor by Cortus.  
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28  
KAC−06040  
ABSOLUTE MAXIMUM RATINGS  
For Supplies and Inputs the maximum rating is defined as  
a level or condition that should not be exceeded at any time.  
If the level or the condition is exceeded, the device will be  
degraded and may be damaged. Operation at these values  
will reduce Mean Time to Failure (MTTF).  
Table 16. SUPPLIES  
Description  
Value  
−0.25 V; 2.3 V  
AVDD_LV, VDD_DIG  
AVDD_HV, Vref_P, VDD_LVDS  
DC Input Voltage at Any Input Pin  
−0.25 V; 4 V  
−0.25 V; VDD_DIG + 0.25 V  
Table 17. CMOS INPUTS  
Parameter  
Input Voltage Low Level  
Input Voltage High Level  
Symbol  
Minimum  
−0.3  
Typical  
Maximum  
Unit  
V
V
IL  
0.35 VDD_DIG  
VDD_DIG + 0.3  
V
IH  
0.65 VDD_DIG  
V
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29  
KAC−06040  
OPERATING RATINGS  
Table 18. INPUT CLOCK CONDITIONS  
Parameter  
Minimum  
Typical  
Maximum  
Unit  
MHz  
%
Frequency for Clk_In1 and Clk_In2  
Duty Cycle for Clk_In1 and Clk_In2  
RESETN  
5
48  
50  
50  
60  
40  
10  
20  
ns  
TRIGGER Pin Minimum Pulse Width  
ns  
TRIGGER must be active at least 4 periods of PLL1 (12.5 ns at 320 MHz) to start a capture cycle. The polarity of the active  
level is configurable by SPI (Register 01D8h Bit 0), the default is active high (i.e. pin = VDD_DIG = trigger request).  
Table 19. OPERATING TEMPERATURE  
Description  
Symbol  
Minimum  
Maximum  
Unit  
Operating Temperature (Note 1)  
T
OP  
−40  
80  
°C  
1. Under conditions of no condensation on the sensor.  
Table 20. CMOS IN/OUT CHARACTERISTICS  
Parameter  
Output Voltage Low Level  
Symbol  
Minimum  
Typical  
Maximum  
Unit  
V
OL  
0.45  
V
V
Output Voltage High Level  
V
OH  
VDD_DIG − 0.45  
Input Hysteresis Voltage  
V
R
R
62  
100  
0.25  
TH  
PU  
PD  
Pull-up Resistor Value for RESETN Pin  
Pull-down Resistor Value for TRIGGER Pin  
Current on ADC_REF Pin  
kW  
kW  
mA  
I
100  
ADC_REF  
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30  
 
KAC−06040  
Table 21. SUPPLIES  
Parameter  
Symbol  
VDD_LVDS  
AVDD_HV  
Vref_P  
Minimum  
3.15  
3.40  
2.71  
1.71  
1.90  
Typical  
3.30  
3.50  
2.80  
1.80  
2.00  
0.5  
Maximum  
3.63  
3.60  
2.88  
1.89  
2.10  
Unit  
V
LVDS IO Supply  
Pixel High Voltage Supply  
Pixel Low Voltage Supply  
Analog Power Supply  
Digital Power Supply  
AVDD_HV − Vref_P  
V
V
AVDD_LV  
VDD_DIG  
V
V
V
Power in STANDBY State  
10  
mW  
mA  
Current in STANDBY State  
VDD_LVDS  
AVDD_HV  
AVDD_LV  
Vref_P  
< 0.5  
< 0.5  
< 0.5  
< 0.5  
1
VDD_DIG  
Power in CONFIG State  
320  
mW  
mA  
Current in CONFIG State  
VDD_LVDS  
AVDD_HV  
AVDD_LV  
Vref_P  
< 0.5  
< 0.5  
< 0.5  
< 0.5  
162  
VDD_DIG  
Power in IDLE State  
510  
mW  
mA  
Current in IDLE State  
VDD_LVDS  
AVDD_HV  
AVDD_LV  
Vref_P  
< 0.5  
20  
< 0.5  
< 0.5  
222  
VDD_DIG  
Power in RUNNING State  
2.26  
W
Current in RUNNING State  
VDD_LVDS in Sub-LVDS Mode  
AVDD_HV  
AVDD_LV  
Vref_P  
mA  
115  
100  
20  
20  
VDD_DIG  
721  
1. Voltages relative to VSS. Current measurements made in darkness.  
2. Max frame rate (and thus maximum current mode).  
a. Tri0Scam mode  
b. 10 bit ADC  
c. PLL2 = Max spec MHz  
d. No horizontal or vertical blanking and 8 active LVDS banks.  
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31  
KAC−06040  
SPI (SERIAL PERIPHERAL INTERFACE)  
The SPI communication interface lets the application  
system to control and configure the sensor. The sensor has  
an embedded slave SPI interface. The application system is  
the master of the SPI bus.  
Table 22.  
Sensor I/O  
Direction  
Name  
Description  
CSN  
I
I
SPI Chip Select − Active low, this input activates the slave interface in the sensor.  
SCK  
SPI Clock − Toggled by the master.  
MISO  
MOSI  
O
I
SPI Master Serial Data Input − Slave (sensor) serial data output.  
SPI Master Serial Data Output − Slave (sensor) serial data input.  
Table 23.  
Parameter  
Minimum  
Typical  
25  
Maximum  
Unit  
MHz  
%
SPI SCK  
5
50  
60  
Duty Cycle on SPI SCK  
40  
50  
Clock Polarity and Phase  
CPOL (Clock POLarity) and CPHA (Clock PHAse) are  
commonly defined in SPI protocol such as to define SCK  
clock phase and polarity. The KAC−06040 defaults to  
expecting the master to be configured with CPOL = 1  
(the base value of the clock is VDD_DIG) and CPHA = 1  
(data is valid on the clock rising edge).  
CSN  
SCK  
MOSI  
MISO  
X
X
X
X
Figure 25. CPOL = 1 and CPHA = 1 Configuration  
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32  
KAC−06040  
SPI Protocol  
Byte 0  
Byte 1  
Byte 2  
Byte 3  
CSN  
Sclk  
8 Cycles 8 Cycles 8 Cycles 8 Cycles  
16 Bit  
Address Word  
16 Bit  
Data to Write  
MOSI  
MSB  
LSB  
MSB  
LSB  
Figure 26. SPI Write Byte Order  
Byte 0  
Byte 1  
Byte 2  
Byte 3  
CSN  
Sclk  
8 Cycles 8 Cycles  
8 Cycles 8 Cycles  
16 Bit  
Address Word  
MOSI  
MISO  
MSB  
LSB  
16 Bit  
Read Data  
Wait Time  
1.5 ms  
MSB  
LSB  
Figure 27. SPI Read Byte Order  
There is a delay during readback between presenting the  
address to be read on the MOSI and being able to read the  
register contents on the MISO. This delay is not the same for  
all registers. Some are available immediately, some require  
a longer fetch time. The 1.5 ms shown in Figure 27 is the  
maximum time to fetch a register’s value when in CONFIG  
state (the recommended state for changing registers). Some  
registers can be adjusted during RUNNING state (see the  
Register Summary on page 26). If performing a readback  
during RUNNING state, the delay could be as long as 4.5 ms  
depending on when in the row the request was sent and the  
sensor’s microcontroller activity at that moment.  
The SPI FB pin can be used to dynamically adjust the wait  
time for a register contents to be fetched. Figure 29  
illustrates the use of the FB pin. The FB output will be low  
(VSS) until the requested register contents are ready to be  
clocked out of the MOSI pin. Once the FB pin goes high  
(VDD_DIG) then clocking the Sclk will transmit the  
requested register contents. The SPI FB pin is inactive by  
default, this function is enabled in register 4041h.  
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33  
 
KAC−06040  
Byte 0  
Byte 1  
Byte 2  
Byte 3  
CSN  
Sclk  
8 Cycles 8 Cycles  
8 Cycles 8 Cycles  
16 Bit  
Address Word  
MOSI  
MSB  
LSB  
16 Bit  
Read Data  
Variable Wait Time  
MISO  
FB  
MSB  
LSB  
Figure 28. SPI Read with FBRB Handshaking  
The Note that readback does not provide the actual  
register value being used, but reflects the next value to be  
used. All new register writes are placed in a shadow memory  
until they can be updated into the active memory. This active  
memory update occurs at the start of the next frame or upon  
entering the state listed in the Register Summary table on  
page 26. Register reads access this shadow memory not the  
active memory. For instance if the sensor is in RUNNING  
mode and you adjust the LL in register 200h. You can read  
back and confirm that your register change was received by  
the sensor; however, the LL will not change since register  
200h can only be changed in CONFIG state. If you change  
the sensor state to CONFIG and then back to RUNNING,  
then the new LL will take effect.  
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34  
KAC−06040  
SPI Interface  
CS  
T
CS_HOLD  
T
T
CYCLE  
CS_SETUP  
SCK  
T
T
HOLD  
SETUP  
X
MSB  
MOSI  
T
T
OUT_DELAY  
OUT_DELAY_CSN  
MISO  
MSB  
MSB−1  
Figure 29. SPI Timing Chronogram  
Table 24. SPI TIMING SPECIFICATION  
Symbol  
Minimum Value  
Maximum Value  
Unit  
ns  
T
T
25  
CYCLE  
2.9  
ns  
SETUP  
T
0.8  
12.5  
12.5  
3.1  
ns  
HOLD  
CS_SETUP  
T
ns  
T
ns  
CS_HOLD  
OUT_DELAY_CSN  
T
4.7  
8.7  
ns  
T
4.9  
ns  
OUT_DELAY  
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35  
KAC−06040  
LVDS INTERFACE  
The data output can be configured to follow standard  
TIA/EIA−644−A LVDS specification or a low power mode  
compatible with common Sub-LVDS definition used in  
FPGA industry. (Please refer to the KAC−06040 User Guide  
for more information).  
Unless otherwise noted, min/max characteristics are for  
T = −40°C to +85°C, output termination resistance  
RL = 100 W 1%, Typical values are at VDD_LVDS =  
3.3 V.  
Use register 2449h to select standard or Sub-LVDS. This  
document assumes that Sub-LVDS is active for all power  
measurements. Standard LVDS can increase the average  
power consumption as much as 200 mW in the case of  
minimum horizontal and vertical blanking.  
Table 25. STANDARD LVDS CHARACTERISTICS  
Parameter  
Symbol  
VOD  
Minimum  
250  
Typical  
Maximum  
Unit  
mV  
mV  
V
Differential Output Voltage  
355  
450  
20  
VOD Variation between Complementary Output States  
Common Mode Output Voltage  
DVOD  
VOCM  
DVOCM  
IOZD  
−20  
1.259  
1.235  
−25  
1.275  
25  
VOCM Variation between Complementary Output States  
High Impedance Leakage Current  
mV  
mA  
−1  
1
Output Short Circuit Current:  
When D+ or D− Connected to Ground  
When D+ or D− Connected to 3.3 V  
IOSD  
mA  
2.9  
12.25  
4.3  
30.47  
Output Capacitance  
CDO  
1.3  
pF  
pF  
Maximum Transmission Capacitance Load Expected  
(for 260 MHz LVDS Clock)  
10  
Table 26. SUB-LVDS CHARACTERISTICS  
Parameter  
Symbol  
Minimum  
140  
Typical  
Maximum  
Unit  
mV  
mV  
V
Differential Output Voltage  
V
OD  
180  
220  
5
VOD Variation between Complementary Output States  
Common Mode Output Voltage  
DV  
−5  
OD  
V
OCM  
0.88  
−10  
0.90  
0.92  
10  
1
VOCM Variation between Complementary Output States  
High Impedance Leakage Current  
DV  
mV  
mA  
OCM  
I
−1  
OZD  
Output Short Circuit Current:  
When D+ or D− Connected to Ground  
When D+ or D− Connected to 3.3 V  
I
mA  
OSD  
1.4  
10.21  
2.2  
30.47  
Output Capacitance  
C
1.3  
pF  
pF  
DO  
Maximum Transmission Capacitance Load Expected  
(for 260 MHz LVDS Clock)  
10  
Table 27.  
Parameter  
Minimum  
Typical  
160  
Maximum  
Unit  
MHz  
%
LVDS_CLK  
50  
160  
Duty Cycle on LVDS_CLK  
50  
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36  
KAC−06040  
In-Block LVDS Timing Specification  
The table below gives LVDS timing specification for one group of LVDS for nominal frequency of 260 MHz. There is no  
skew specification between groups.  
Table 28. IN-BLOCK LVDS TIMING SPECIFICATION  
Parameter  
Symbol  
Value  
600  
600  
600  
600  
Typical  
Maximum  
Unit  
ps  
Minimum Time between Data Change and Clock Rising Edge  
Minimum Time between Clock Rising and Data Change  
Minimum Time between Data Change and Clock Falling Edge  
Minimum Time between Clock Falling Edge and Data Change  
Maximum Differential Skew between the 7 Data Pairs  
ts  
th  
ts  
th  
DLH  
ps  
DLH  
DHL  
DHL  
SKD  
ps  
ps  
t
200  
700  
ps  
V
OH  
Differential Data  
V
OL  
ts  
th  
DLH  
ts  
th  
DHL  
DLH  
DHL  
Differential Clock  
Figure 30. LVDS Timing Chronogram  
Table 29. INTER-BLOCK LVDS TIMING SPECIFICATION  
Parameter  
Minimum  
Typical  
Maximum  
Unit  
LVDS Clock Periods  
Inter-Block Skew  
6
12  
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37  
KAC−06040  
STORAGE AND HANDLING  
Table 30. STORAGE CONDITIONS  
Description  
Storage Temperature  
Humidity  
Symbol  
Minimum  
Maximum  
Unit  
°C  
Notes  
T
ST  
−40  
5
80  
90  
1
2
RH  
%
1. Long-term storage toward the maximum temperature will accelerate color filter degradation.  
2. T = 25°C. Excessive humidity will degrade MTTF.  
For information on ESD and cover glass care and  
cleanliness, please download the Image Sensor Handling  
and Best Practices Application Note (AN52561/D) from  
www.onsemi.com.  
For quality and reliability information, please download  
the Quality & Reliability Handbook (HBD851/D) from  
www.onsemi.com.  
For information on device numbering and ordering codes,  
please download the Device Nomenclature technical note  
(TND310/D) from www.onsemi.com.  
For information on soldering recommendations, please  
download the Soldering and Mounting Techniques  
Reference  
www.onsemi.com.  
Manual  
(SOLDERRM/D)  
from  
For information on Standard terms and Conditions of  
Sale, please download Terms and Conditions from  
www.onsemi.com.  
www.onsemi.com  
38  
 
KAC−06040  
MECHANICAL INFORMATION  
Completed Assembly  
Notes:  
1. See Ordering Information for marking code.  
2. No materials to interfere with clearance through package holes.  
3. Imaging Array is centered at the package center.  
4. Length dimensions in mm units.  
Figure 31. Completed Assembly (1 of 5)  
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39  
KAC−06040  
Figure 32. Completed Assembly (2 of 5)  
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40  
KAC−06040  
Figure 33. Completed Assembly (3 of 5)  
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41  
KAC−06040  
Figure 34. Completed Assembly (4 of 5)  
Figure 35. Completed Assembly (5 of 5)  
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42  
KAC−06040  
MAR (Multi-Layer Anti-Reflective Coating) Cover Glass  
Notes:  
1. Units: IN [MM]  
2. A-Zone Dust/Scratch Spec: 10 mm Maximum  
3. Index of Refraction: 1.5231  
Figure 36. MAR Cover Glass Specification  
ON Semiconductor and the  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.  
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed  
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation  
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and  
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets  
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each  
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,  
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which  
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or  
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim  
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable  
copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81−3−5817−1050  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA  
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada  
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Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
KAC−06040/D  

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