KSA1013OBU [ONSEMI]
PNP外延硅晶体管;
| 型号： | KSA1013OBU |
| 厂家： | 
ONSEMI |
| 描述： | PNP外延硅晶体管 放大器 晶体管 |
| 文件： | 总8页 (文件大小：369K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
October 2014
KSA1013
PNP Epitaxial Silicon Transistor
Features
• Color TV Audio Output
• Color TV Vertical Deflection Output
TO-92L
1. Emitter 2. Collector 3. Base
1
Ordering Information
Part Number
KSA1013YBU
KSA1013OBU
KSA1013YTA
KSA1013OTA
Top Mark
Package
Packing Method
Bulk
A1013
TO-92 3L
Ammo
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
-160
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
-160
V
-6
V
-1
A
IB
Base Current
-0.5
A
TJ
Junction Temperature
Storage Temperature
150
°C
°C
TSTG
-55 to +150
© 2002 Fairchild Semiconductor Corporation
KSA1013 Rev. 1.1.1
www.fairchildsemi.com
Thermal Characteristics(1)
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
Parameter
Value
900
Unit
mW
Power Dissipation
Derate Above TA = 25°C
7.2
mW/°C
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
139
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
ICBO
Parameter
Collector Cut-Off Current
Emitter Cut-Off Current
Conditions
VCB = -150 V, IE = 0
VEB = -6 V, IC = 0
Min.
Typ.
Max.
-1
Unit
μA
μA
V
IEBO
-1
BVCEO
hFE
Collector-Emitter Breakdown Voltage IC = -10 mA, IB = 0
DC Current Gain VCE = -5 V, IC = -200 mA
-160
60
320
-1.5
VCE(sat) Collector-Emitter Saturation Voltage IC = -500 mA, IB = -50 mA
V
V
VBE(on)
fT
Base-Emitter On Voltage
VCE =- 5 V, IC = -5 mA
-0.45
15
-0.75
Current Gain Bandwidth Product
VCE = -5 V, IC = -200 mA
50
MHz
VCB = -10 V, IE = 0,
f = 1 MHz
Cob
Output Capacitance
35
pF
hFE Classification
Classification
R
O
Y
hFE
60 ~ 120
100 ~ 200
160 ~ 320
© 2002 Fairchild Semiconductor Corporation
KSA1013 Rev. 1.1.1
www.fairchildsemi.com
2
Typical Performance Characteristics
-1.0
1000
100
10
EMITTER COMMON
EMITTER COMMON
Ta=25oC
IB = -12mA
IB = -10mA
Ta=25oC
IB = -15mA
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
-0.0
IB = -8mA
VCE = -10V
VCE = -5V
IB = -6mA
IB = -4.5mA
VCE = -2V
IB = -3mA
IB = -2mA
IB = -1mA
1
-10
-0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
-100
-1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC Current Gain
1000
100
10
-10
EMITTER COMMON
Ta=25oC
EMITTER COMMON
-----VCE=-10V
- - -VCE= -5V
-1
IC/IB=10
-0.1
-0.01
IC/IB=5
-10
-100
-1000
-1
-10
-100
-1000
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 3. DC Current Gain
Figure 4. Collector-Emitter Saturation Voltage
-1.0
-0.8
-0.6
-0.4
-0.2
-0.0
100
EMITTER COMMON
VCE=-5V
10
1
-0.0
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0
-10
-100
VBE(sat)[V], BASE-EMITTER VOLTAGE
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Base-Emitter On Voltage
Figure 6. Collector Output Capacitance
© 2002 Fairchild Semiconductor Corporation
KSA1013 Rev. 1.1.1
www.fairchildsemi.com
3
Typical Performance Characteristics (Continued)
1000
-10
-1
EMITTER COMMON
Ta=25oC
IC MAX. (PULSE)
100
VCE=-5V
-0.1
VCE=-2V
10
-0.01
-1E-3
1
-1
-10
-100
-1
-10
-100
-1000
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 8. Safe Operating Area
Figure7. Current Gain Bandwidth Product
© 2002 Fairchild Semiconductor Corporation
KSA1013 Rev. 1.1.1
www.fairchildsemi.com
4
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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