KSA1015YTA [ONSEMI]
PNP外延硅晶体管;
| 型号： | KSA1015YTA |
| 厂家： | 
ONSEMI |
| 描述： | PNP外延硅晶体管 放大器 晶体管 |
| 文件： | 总5页 (文件大小：169K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
PNP Epitaxial Silicon
Transistor
KSA1015
1. Emitter
2. Collector
3. Base
1
Features
2
3
• Low−Frequency Amplifier
• Collector−Base Voltage: V
• Complement to KSC1815
Bent Lead
Tape & Reel
Ammo Packing
= −50 V
CBO
TO−92 3 4.83x4.76 LEADFORMED
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
CASE 135AR
Compliant
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
MARKING DIAGRAM
Symbol
Parameter
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
Value
−50
Unit
V
V
CBO
A1015
(GR, Y)
AYWW
V
CEO
V
EBO
−50
V
−5
V
I
C
−150
−50
mA
mA
°C
°C
I
B
Base Current
A
= Assembly Site
A1015(GR, Y) = Device Code
T
Junction Temperature
Storage Temperature Range
150
J
Y
WW
= Year of Production,
= Work Week Number
T
−55 to 150
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
THERMAL CHARACTERISTICS (Note 1)
A
Packing
Package Method
(T = 25°C unless otherwise noted)
Device
Marking
Symbol
Parameter
Max
400
3.2
Unit
mW
KSA1015GRTA A1015GR TO−92 3L Ammo
(Pb−Free)
P
D
Total Device Dissipation
KSA1015YTA
A1015Y
TO−92 3L Ammo
(Pb−Free)
Derate Above 25°C
mW/°C
°C/W
R
Thermal Resistance, Junction to Ambient
312
q
JA
1. PCB size: FR−4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch)
with minimum land pattern size.
© Semiconductor Components Industries, LLC, 2002
1
Publication Order Number:
December, 2021 − Rev. 2
KSA1015/D
KSA1015
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Collector−Base Breakdown Voltage
Collector−Emitter Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cut−Off Current
Emitter Cut−Off Current
Conditions
= −100 mA, I = 0
Min
−50
−50
−5
−
Typ
−
Max
−
Unit
V
BV
BV
BV
I
I
I
CBO
CEO
EBO
C
E
= −10 mA, I = 0
−
−
V
C
B
I = −10 mA, I = 0
−
−
V
E
C
V
= −50 V, I = 0
−
−0.1
−0.1
400
−
mA
mA
CBO
CB
EB
CE
CE
E
I
V
V
V
= −5 V, I = 0
−
−
EBO
C
h
h
1
2
DC Current Gain
= −6 V, I = −2 mA
70
25
−
−
FE
C
DC Current Gain
= −6 V, I = −150 mA
−
FE
C
V
V
(sat)
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
I
= −100 mA, I = −10 mA
−0.1
−
−0.3
−1.1
−
V
V
CE
C
C
B
(sat)
I
= −100 mA, I = −10 mA
−
BE
B
f
T
V
V
V
= −10 V, I = −1 mA
80
−
−
MHz
pF
CE
CB
CE
C
C
= −10 V, I = 0, f = 1 MHz
4
7
ob
E
NF
Noise Figure
= −6 V, I = −0.1 mA, f = 100 Hz,
−
0.5
6
dB
C
R
= 10 kW
G
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
hFE CLASSIFICATION
Classification
O
Y
GR
h
FE
1
70~140
120~240
200~400
www.onsemi.com
2
KSA1015
TYPICAL PERFORMANCE CHARACTERISTICS
−50
−45
−40
−35
−30
−25
−20
−15
−10
−5
1000
V
CE
= −6 V
I
B
= −400 mA
I
B
= −350 mA
I
B
= −300 mA
100
10
1
I
= −250 mA
B
I
= −200 mA
B
I
= −150 mA
B
B
I
= −100 mA
= −50 mA
I
B
0
0
−2 −4 −6 −8 −10 −12 −14 −16 −18 −20
, COLLECTOR−EMITTER VOLTAGE (V)
−0.1
−1
−10
−100
V
CE
I , COLLECTOR CURRENT (mA)
C
Figure 1. Static Characteristic
Figure 2. DC Current Gain
−10
−1
−100
−10
−1
V
CE
= −6 V
I
C
= 10 I
B
V
BE
(sat)
V
CE
(sat)
−0.1
−0.01
−0.1
−0.1
−1
−10
−100
−0.0
−0.2
V (sat), BASE−EMITTER VOLTAGE (V)
BE
−0.4
−0.6
−0.8
−1.0
−1.2
I , COLLECTOR CURRENT (mA)
C
Figure 3. Base−Emitter Saturation Voltage
and Collector−Emitter Saturation Voltage
Figure 4. Base−Emitter On Voltage
1000
100
10
f = 1 MHz
V
CE
= −6 V
I
E
= 0
10
1
−1
−10
−100
−1
−10
V
CB
(sat), COLLECTOR−BASE VOLTAGE (V)
I , COLLECTOR CURRENT (mA)
C
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
www.onsemi.com
3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−92 3 4.83x4.76 LEADFORMED
CASE 135AR
ISSUE O
DATE 30 SEP 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13879G
TO−92 3 4.83X4.76 LEADFORMED
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
KSA1015YTA_NL
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, LEAD FREE PACKAGE-3
FAIRCHILD
KSA1142-O
Power Bipolar Transistor, 0.1A I(C), 180V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
SAMSUNG
KSA1142-Y
Power Bipolar Transistor, 0.1A I(C), 180V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
SAMSUNG
KSA1142OSTU
PNP Epitaxial Silicon Transistor, TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD), 1920/RAIL
FAIRCHILD
KSA1142Y
Power Bipolar Transistor, 0.1A I(C), 180V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
FAIRCHILD
KSA1142YSTU
Power Bipolar Transistor, 0.1A I(C), 180V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
ONSEMI
KSA1150
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92S, 3 PIN
SAMSUNG
©2020 ICPDF网 联系我们和版权申明