KSA1281YTA [ONSEMI]
PNP外延硅晶体管;
| 型号： | KSA1281YTA |
| 厂家： | 
ONSEMI |
| 描述： | PNP外延硅晶体管 晶体管 |
| 文件： | 总6页 (文件大小：143K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductor
Is Now
To learn more about onsemi™, please visit our website at
www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
KSA1281
PNP Epitaxial Silicon
Transistor
Features
• Audio Power Amplifier
• 3 W Output Application
www.onsemi.com
ABSOLUTE MAXIMUM RATINGS
(Values are at T = 25°C unless otherwise noted.)
A
Parameter
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
Symbol
Value
−50
−50
−5
Unit
V
V
CBO
V
CEO
V
EBO
T
V
V
I
C
−2
A
Junction Temperature
Storage Temperature
T
150
°C
°C
J
T
−55 to
+150
STG
1
2
3
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
TO−92L
CASE 135AM
PIN CONNECTIONS
1. Emitter 2. Collector 3. Base
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
October, 2018 − Rev. 4
KSA1281/D
KSA1281
THERMAL CHARACTERISTICS (Note 1)
Symbol
Parameter
Value
1000
8.0
Unit
mW
P
D
Power Dissipation T = 25°C
C
Derate Above T = 25°C
mW/°C
°C/W
A
R
Thermal Resistance, Junction−to−Ambient
125
q
JA
1. PCB size: FR−4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
ELECTRICAL CHARACTERISTICS (Note 2) Values are at T = 25°C unless otherwise noted.
A
Symbol
Parameter
Conditions
= −1 mA, I = 0
Min
−50
−50
−5
Typ
Max
Unit
BV
BV
BV
Collector−Base Breakdown Voltage
Collector−Emitter Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cut−Off Current
I
V
V
CBO
CEO
EBO
C
E
I
C
= −10 mA, I = 0
B
I = −1 mA, I = 0
V
E
C
I
V
= −50 V, I = 0
−100
−100
240
nA
nA
CBO
CB
E
I
Emitter Cut−Off Current
V
= −5 V, I = 0
EB C
EBO
h
DC Current Gain
V
= −2 V, I = −500 mA
120
40
FE1
FE2
CE
C
h
V
= −2 V, I = −1.5 A
C
CE
V
V
(sat)
(sat)
Base−Emitter Saturation Voltage
Collector−Emitter Saturation Voltage
Output Capacitance
I
I
= −1 A, I = −0.05 A
−1.2
−0.5
V
V
BE
C
C
B
= −1 A, I = −0.05 A
CE
B
C
ob
T
V
= −10 V, I = 0, f = 1 MHz
40
pF
CB
E
f
Current Gain Bandwidth Product
V
= −2 V, I = −500 mA
100
MHz
CE
C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse test: pulse width ≤ 300 ms, duty cycle ≤ 2.0%.
ORDERING INFORMATION
Part Number
Top Mark
Package
Packing Method
KSA1281YTA
A1281 Y−
TO−92 3L
Ammo
www.onsemi.com
2
KSA1281
Typical Performance Characteristics
−1400
−1200
−1000
−800
−600
−400
−200
0
1
IB = −7mA
IB = −6mA
IB = −5mA
IC = 50IB
Ta = 25oC
IB = −4mA
0.1
IB = −3mA
IB = −2mA
IB = −1mA
0.01
0.001
1
10
0.1
0.01
0
−2
−4
−6
−8
−10
−12
−14
−16
VCE[V], COLLECTOR−EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. Base−Emitter Saturation Voltage
1
−1400
VCE = −2V
−1200
−1000
−800
−600
−400
IC = 50IB
Ta = 25oC
0.1
−200
0.01
0.001
0
1
10
0.1
0.01
0
−0.2
−0.4
−0.6
−0.8
−1.0
−1.2
−1.4
IC[mA], COLLECTOR CURRENT
VBE[V], BASE−EMITTER VOLTAGE
Figure 3. Collector−Emitter Saturation Voltage
Figure 4. Base−Emitter On Voltage
−10
1.4
IC(MAX)PLUS
IC(MAX)
1.2
1.0
0.8
0.6
0.4
−1
1ms
1s
Ta=25oC
D.C.
OPERATION
−0.1
VCEOMAX
0.2
0
−0.01
−0.1
−1
−10
−100
0
25
50
75
100
125
150
175
Ta[oC], AMBIENT TEMPERATURE
VCE[V], COLLECTOR−EMITTER VOLTAGE
Figure 5. Safe Operating Area
Figure 6. Power Derating
www.onsemi.com
3
KSA1281
PACKAGE DIMENSIONS
TO−92 3 8.0x4.9 (LEADFORMED)
CASE 135AM
ISSUE A
www.onsemi.com
4
KSA1281
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
◊
KSA1281/D
相关型号：
KSA1298D87Z
Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon
FAIRCHILD
KSA1298L99Z
Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon
FAIRCHILD
KSA1298OD87Z
Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon
FAIRCHILD
KSA1298OL99Z
Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon
FAIRCHILD
KSA1298TF
Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
SAMSUNG
KSA1298TR
Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
SAMSUNG
©2020 ICPDF网 联系我们和版权申明