KSB1151YS [ONSEMI]
PNP外延硅晶体管;
| 型号： | KSB1151YS |
| 厂家： | 
ONSEMI |
| 描述： | PNP外延硅晶体管 局域网 晶体管 |
| 文件： | 总6页 (文件大小：201K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
KSB1151
Feature
•
•
•
•
Low Collector-Emitter Saturation Voltage
Large Collector Current
High Power Dissipation : P =1.3W (T =25°C)
C
a
Complement to KSD 1691
TO-126
1. Emitter 2.Collector 3.Base
1
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Symbol
Parameter
Value
- 60
- 60
- 7
Units
V
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
CBO
V
CEO
EBO
V
I
I
I
- 5
A
C
*Collector Current (Pulse)
Base Current
- 8
A
CP
B
- 1
A
P
Collector Dissipation (T =25°C)
1.3
W
W
°C
°C
C
a
Collector Dissipation (T =25°C)
20
C
T
T
Junction Temperature
Storage Temperature
150
J
- 55 ~ 150
STG
* PW≤10ms, Duty Cycle≤50%
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
Test Condition
Min.
Typ.
Max.
Units
µA
I
V
V
= - 50V, I = 0
- 10
- 10
CBO
EBO
CB
EB
E
I
= - 7V, I = 0
µA
C
h
h
h
V
V
V
= - 1V, I = - 0.1A
60
100
50
FE1
FE2
FE3
CE
CE
CE
C
= - 1V, I = - 2A
200
400
C
= - 2V, I = - 5A
C
V
V
(sat)
(sat)
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Turn On Time
I
I
= - 2A, I = - 0.2A
- 0.14
- 0.9
0.15
0.78
0.18
- 0.3
- 1.2
1
V
V
CE
C
C
B
= - 2A, I = - 0.2A
BE
B
t
t
t
V
I
= - 10V, I = - 2A
µs
µs
µs
ON
CC
C
= - I =0.2A
Storage Time
B1
B2
2.5
1
STG
F
RL = 5Ω
Fall Time
* Pulse test: PW≤350µs, Duty Cycle≤2% Pulsed
h
Classification
FE
Classification
O
Y
G
h
100 ~ 200
160 ~ 320
200 ~ 400
FE2
©2003 Fairchild Semiconductor Corporation
Rev. B, May 2003
Typical Characteristics
-10
-8
-1000
-100
-10
VCE = -2V
-6
VCE = -1V
IB = -20mA
-4
-2
-0
IB = -10mA
IB = 0
-1
-0.01
-0.1
-1
-10
-0.4
-0.8
-1.2
-1.6
-2.0
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC current Gain
-10
-10
IC = 10 IB
IC(Pulse)MAX
IC(DC)MAX
VBE(sat)
-1
-1
-0.1
-0.01
-0.1
-0.1
-1
-10
-1
-10
-100
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Figure 4. Forward Bias Operating Area
-10
-8
160
140
120
100
80
-6
-4
60
40
-2
20
-0
0
-20
-40
-60
-80
-100
0
25
50
75
100
125
150
175
200
VCE[V], COLLECTOR-EMITTER VOLTAGE
TC[oC], CASE TEMPERATURE
Figure 5. Reverse Bias Safe Operating Area
Figure 6. Derating Curve of Safe Operating Areas
©2003 Fairchild Semiconductor Corporation
Rev. B, May 2003
Typical Characteristics (Continued)
30
25
20
15
10
5
0
25
50
75
100
125
150
175
TC[oC], CASE TEMPERATURE
Figure 7. Power Derating
©2003 Fairchild Semiconductor Corporation
Rev. B, May 2003
8.30
7.70
3.45
3.05
4.00
3.80
11.20
10.80
14.20 MAX
3.20
1.35
1.95
1.55
1.70
1.50
1.00
E
D
0.85
3X
0.65
#1
0.60
0.45
M
3X
0.254
2.29
TOP VIEW
3°
SIDE VIEW
PRODUCTION
CODE
TERMINAL
LENGTH "D"
TERMINAL
LENGTH "E"
TSSTU
TSTU
NONE
(STD LENGTH)
3.45 - 4.05
2.36 - 2.96
6.45-7.45
5.36-6.36
FRONT VIEW
12.76 - 13.36
15.76-16.76
NOTES:
A. NO INDUSTRY STANDARD APPLIES TO THIS
PACKAGE
B. ALL DIMENSIONS ARE IN MILLIMETERS
C. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD
FLASH, AND TIE BAR PROTRUSIONS
D
FOR TERMINAL LENGTH "D", REFER TO TABLE
FOR TERMINAL LENGTH "E", REFER TO TABLE
E
F. DRAWING FILENAME: MKT-TO126AArev2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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