KSB1366GTU [ONSEMI]

PNP外延硅晶体管;
KSB1366GTU
型号: KSB1366GTU
厂家: ONSEMI    ONSEMI
描述:

PNP外延硅晶体管

局域网 放大器 晶体管
文件: 总5页 (文件大小:212K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Is Now Part of  
To learn more about ON Semiconductor, please visit our website at  
www.onsemi.com  
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers  
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor  
product management systems do not have the ability to manage part nomenclature that utilizes an underscore  
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain  
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated  
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please  
email any questions regarding the system integration to Fairchild_questions@onsemi.com.  
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number  
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right  
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON  
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON  
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s  
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA  
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended  
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out  
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor  
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
KSB1366  
LOW FREQUENCY POWER AMPLIFIER  
Complement to KSD2012  
TO-220F  
1.Base 2.Collector 3.Emitter  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
- 60  
Units  
V
V
V
V
Collector-Base Voltage  
CBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current(DC)  
Base Current  
- 60  
V
CEO  
EBO  
- 7  
V
I
I
- 3  
A
C
- 0.5  
2
A
B
P
Collector Dissipation (T =25°C)  
W
W
°C  
°C  
C
a
P
T
T
Collector Dissipation (T =25°C)  
25  
C
C
Junction Temperature  
Storage Temperature  
150  
J
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Collector-Emitter Breakdown Voltage  
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
Test Condition  
Min.  
Typ.  
Max.  
Units  
BV  
I
= - 50mA, I = 0  
- 60  
V
CEO  
CBO  
EBO  
C
B
I
I
V
V
= - 60V, I = 0  
- 100  
- 100  
320  
µA  
µA  
CB  
EB  
E
= - 7V, I = 0  
C
h
h
V
V
= - 5V, I = - 0.5A  
100  
20  
FE1  
FE2  
CE  
CE  
C
= - 5V, I = - 3A  
C
V
V
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
Base-Emitter ON Voltage  
I
= - 2A, I = - 0.2A  
- 0.5  
- 0.7  
9
- 1  
- 1  
V
V
CE  
C
B
V
V
= - 5V, I = - 0.5A  
C
BE  
CE  
CE  
f
Current Gain Bandwidth Product  
= - 5V, I = - 0.5A  
MHz  
T
C
h
Classification  
FE  
Classification  
Y
G
h
100 ~ 200  
150 ~ 320  
FE1  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  
Typical Characteristics  
-5  
-4  
-3  
-2  
-1  
-0  
1000  
100  
10  
VCE = -5V  
IB = -40mA  
IB = -30mA  
IB = -20mA  
IB = -10mA  
IB = 0  
1
-0.01  
-0.1  
-1  
-10  
-0  
-1  
-2  
-3  
-4  
-5  
IC[A], COLLECTOR CURRENT  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
Figure 1. Static Characteristic  
Figure 2. DC current Gain  
-4  
-3  
-2  
-1  
-0  
VCE = -5V  
-10  
IC = 10 IB  
-1  
-0.1  
-0.0  
-0.4  
-0.8  
-1.2  
-1.6  
-0.01  
-0.01  
-0.1  
-1  
-10  
VBE[V], BASE-EMITTER VOLTAGE  
IC[A], COLLECTOR CURRENT  
Figure 3. Collector-Emitter Saturation Voltage  
Figure 4. Base-Emitter On Voltage  
-10  
40  
35  
30  
25  
20  
15  
10  
5
ICmax(pulse)  
ICmax(DC)  
-1  
-0.1  
0
-1  
-10  
-100  
0
25  
50  
75  
100  
125  
150  
175  
200  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
TC[oC], CASE TEMPERATURE  
Figure 5. Safe Operating Area  
Figure 6. Power Derating  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  
10.36  
9.96  
2.66  
2.42  
B
A
B
3.28  
3.08  
7.00  
3.40  
3.20  
0.70  
SEE NOTE "F"  
SEE NOTE "F"  
6.88  
6.48  
1 X 45°  
16.07  
15.67  
B
16.00  
15.60  
B
(3.23)  
3
1
1.47  
1.24  
2.96  
2.56  
2.14  
0.90  
0.70  
0.50  
10.05  
9.45  
M
A
30°  
0.45  
0.25  
0.60  
0.45  
B
2.54  
2.54  
4.90  
4.50  
B
NOTES:  
A. EXCEPT WHERE NOTED CONFORMS TO  
EIAJ SC91A.  
B
DOES NOT COMPLY EIAJ STD. VALUE.  
C. ALL DIMENSIONS ARE IN MILLIMETERS.  
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,  
MOLD FLASH AND TIE BAR PROTRUSIONS.  
E. DIMENSION AND TOLERANCE AS PER ASME  
Y14.5-1994.  
F. OPTION 1 - WITH SUPPORT PIN HOLE.  
OPTION 2 - NO SUPPORT PIN HOLE.  
G. DRAWING FILE NAME: TO220M03REV5  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent  
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This  
literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 8002829855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81358171050  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA  
Phone: 3036752175 or 8003443860 Toll Free USA/Canada  
Fax: 3036752176 or 8003443867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
© Semiconductor Components Industries, LLC  
www.onsemi.com  

相关型号:

KSB1366YTU

Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN
FAIRCHILD

KSB1A010LFT

Low-profile Tact Switch
ITT

KSB1A011LFT

Low-profile Tact Switch
ITT

KSB1A012LFT

Low-profile Tact Switch
ITT

KSB1A030LFT

Low-profile Tact Switch
ITT

KSB1A031LFT

Low-profile Tact Switch
ITT

KSB1A032LFT

Low-profile Tact Switch
ITT

KSB1A110LFT

Low-profile Tact Switch
ITT

KSB1A111LFT

Low-profile Tact Switch
ITT

KSB1A112LFT

Low-profile Tact Switch
ITT

KSB1A130LFT

Low-profile Tact Switch
ITT

KSB1A131LFT

Low-profile Tact Switch
ITT