KSC1008OBU [ONSEMI]
NPN外延硅晶体管;
| 型号： | KSC1008OBU |
| 厂家： | 
ONSEMI |
| 描述： | NPN外延硅晶体管 开关 晶体管 |
| 文件： | 总6页 (文件大小：290K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN Epitaxial Silicon
Transistor
KSC1008
Features
• Low−Frequency Amplifier Medium Speed Switching
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• High Collector−Base Voltage: V
= 80 V
CBO
• Collector Current: I = 700 mA
C
• Suffix “−C” means Center Collector (1. Emitter 2. Collector 3. Base)
• Non Suffix “−C” means Side Collector (1. Emitter 2. Base
TO−92−3
CASE 135AN
3. Collector)
• Complement to KSA708
• These are Pb−Free Devices
1
2
3
ABSOLUTE MAXIMUM RATINGS
(T = 25°C unless otherwise noted.)
A
Symbol
Parameter
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
Value
Unit
V
TO−92−3 LF
CASE 135AR
V
CBO
V
CEO
V
EBO
80
60
1
2
V
3
8
V
KSC1008:
1. Emitter 2. Base 3. Collector
KSC1008C: 1. Emitter 2. Collector 3. Base
I
C
700
mA
_C
_C
T
J
Junction Temperature
Storage Temperature
150
T
STG
−55 to 150
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
AC1
008X
YWW
THERMAL CHARACTERISTICS
(T = 25°C unless otherwise noted.) (Note 1)
A
Symbol
Parameter
Power Dissipation
Value
800
6.4
Unit
mW
P
D
A
= Assembly Code
C1008 = Device Code
= O/Y/YC/G
Derate Above 25_C
mW/_C
_C/W
R
Thermal Resistance,
156
θ
JA
X
Junction−to−Ambient
YWW = Date Code
1. PCB size: FR−4, 76 mm × 114 mm × 1.57 mm (3.0 inch × 4.5 inch × 0.062 inch)
with minimum land pattern size.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
August, 2021 − Rev. 2
KSC1008/D
KSC1008
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Collector−Base Breakdown Voltage
Collector−Emitter Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cut−Off Current
Conditions
= 100 mA, I = 0
Min
80
60
8
Typ
−
Max
−
Unit
V
BV
BV
BV
I
I
CBO
CEO
EBO
C
E
= 10 mA, I = 0
−
−
V
C
B
I = 10 mA, I = 0
−
−
V
E
C
I
V
= 60 V, I = 0
−
−
0.1
0.1
400
0.4
1.10
−
mA
mA
CBO
CB
EB
CE
E
I
Emitter Cut−Off Current
V
V
= 5 V, I = 0
−
−
EBO
C
h
FE
DC Current Gain
= 2 V, I = 50 mA
40
−
−
C
V
V
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
I
C
I
C
= 500 mA, I = 50 mA
0.2
0.86
50
8
V
V
CE(sat)
BE(sat)
B
= 500 mA, I = 50 mA
−
B
f
T
V
V
= 10 V, I = 50 mA
30
−
MHz
pF
CE
CB
C
C
= 10 V, I = 0, f = 1 MHz
−
ob
E
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
hFE Classification
Classification
O
Y
G
hFE
70 ~ 140
120 ~ 240
200 ~ 400
ORDERING INFORMATION (Note 2)
Part Number
Top Mark
C1008 O−
C1008 Y−
C1008 Y−
C1008 YC
C1008 G−
Package
Shipping
KSC1008OBU
TO−92−3
(Pb−Free)
10000 / Bulk Bag
10000 / Bulk Bag
2000 / Fan−Fold
2000 / Fan−Fold
2000 / Fan−Fold
KSC1008YBU
KSC1008YTA
TO−92−3 LR
(Pb−Free)
KSC1008CYTA
KSC1008GTA
2. Affix “−C−” means center collector pin. Affix “−O−, −Y−, −G−” means h classification. Suffix “−BU” means bulk packing, straight lead form.
FE
Suffix “−TA” means tape and ammo packing, 0.200 in−line spacing lead form.
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2
KSC1008
TYPICAL PERFORMANCE CHARACTERISTICS
200
180
160
140
120
100
80
240
I
B
= 1.8 mA
V
CE
= 2 V
220
200
180
160
140
120
100
80
I
B
= 1.6 mA
I
= 1.4 mA
B
I
B
I
B
I
B
= 1.2 mA
= 1.0 mA
= 0.8 mA
I
B
I
B
I
B
= 0.6 mA
= 0.4 mA
= 0.2 mA
60
60
40
40
20
20
0
0
0
5
10 15 20 25 30 35 40 45 50
, Collector−Emitter Voltage (V)
1
10
100
1000
V
CE
I , Collector Current (mA)
C
Figure 2. DC Current Gain
Figure 1. Static Characteristic
10
1
1000
100
10
I
C
= 10 I
V
CE
= 2 V
B
V
BE(sat)
0.1
0.01
V
CE(sat)
1
0.0
1
10
100
1000
0.2
0.4
, Base−Emitter Voltage (V)
BE
0.6
0.8
1.0
1.2
I , Collector Current (mA)
C
V
Figure 4. Base−Emitter On Voltage
Figure 3. Base−Emitter Saturation Voltage
and Collector−Emitter Saturation Voltage
100
10
1
f = 1 MHz
I
E
= 0
1
10
100
V
CB
, Collector−Base Voltage (V)
Figure 5. Collector Output Capacitance
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−92 3 4.825x4.76
CASE 135AN
ISSUE O
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13880G
TO−92 3 4.825X4.76
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−92 3 4.83x4.76 LEADFORMED
CASE 135AR
ISSUE O
DATE 30 SEP 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13879G
TO−92 3 4.83X4.76 LEADFORMED
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
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