KSC1815YTA [ONSEMI]
NPN 外延硅晶体管;
| 型号： | KSC1815YTA |
| 厂家： | 
ONSEMI |
| 描述： | NPN 外延硅晶体管 放大器 PC 晶体管 |
| 文件： | 总5页 (文件大小：253K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN Epitaxial Silicon
Transistor
KSC1815
Features
• Audio Frequency Amplifier and High−Frequency OSC
• Complement to KSA1015
www.onsemi.com
• Collector−Base Voltage: V
• This is a Pb−Free Device
= 50 V
CBO
MAXIMUM RATINGS (Values are at T = 25°C unless otherwise noted.)
A
Symbol
Parameter
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
Value
Unit
V
1. Emitter
2. Collector
3. Base
V
CBO
V
CEO
V
EBO
60
50
5
V
1
2
3
V
TO−92 3 4.83x4.76
LEADFORMED
CASE 135AR
I
C
150
mA
mA
°C
°C
I
B
Base Current
50
T
J
Junction Temperature
Storage Temperature Range
150
MARKING DIAGRAM
T
STG
−55 to 150
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
AC1
815X
YWW
THERMAL CHARACTERISTICS (Values are at T = 25°C unless otherwise
A
noted.) (Note 1)
Symbol
Parameter
Total Device Dissipation
Max.
400
3.2
Unit
mW
P
D
Derate Above 25°C
mW/°C
°C/W
R
Thermal Resistance, Junction to Ambient
312
q
JA
1. PCB size: FR−4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch)
A
= Assembly Code
with minimum land pattern size.
C1815 = Device Code
X
= O / Y / GR / L
YWW = Date Code
ORDERING INFORMATION
Device
KSC1815YTA
Package
Shipping
2000 / Fan−Fold
TO−92 3L
(Pb−Free)
© Semiconductor Components Industries, LLC, 1999
1
Publication Order Number:
June, 2021 − Rev. 2
KSC1815/D
KSC1815
ELECTRICAL CHARACTERISTICS (Values are at T = 25°C unless otherwise noted.)
A
Symbol
Parameter
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Conditions
= 1 mA, I = 0
Min
60
50
5
Typ
Max
Unit
V
BV
BV
BV
I
I
CBO
CEO
EBO
C
E
= 10 mA, I = 0
V
C
B
I = 10 mA, I = 0
V
E
C
I
Collector Cut−Off Current
Emitter Cut−Off Current
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
DC Current Gain
V
= 60 V, I = 0
0.1
0.1
mA
mA
V
CBO
CB
EB
E
I
V
= 5 V, I = 0
C
EBO
V
V
(sat)
(sat)
I
C
I
C
= 100 mA, I = 10 mA
0.10
0.25
1.0
CE
BE
B
= 100 mA, I = 10 mA
V
B
h
h
V
CE
V
CE
V
CE
V
CB
V
CE
= 6 V, I = 2 mA
70
25
80
700
FE1
FE2
C
= 6 V, I = 150 mA
C
f
T
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
= 10 V, I = 1 mA
MHz
pF
C
C
= 10 V, I = 0, f = 1 MHz
2.0
1.0
3.0
ob
E
NF
= 6 V, I = 0.1 mA,
10.0
dB
C
R = 10 kW, f = 1 kHz
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
hFE CLASSIFICATION
Classification
O
Y
GR
L
70 ~ 140
120 ~ 240
200 ~ 400
350 ~ 700
H
FE1
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2
KSC1815
TYPICAL PERFORMANCE CHARACTERISTICS
100
80
60
40
20
0
100
V
= 6 V
CE
I
= 400 mA
B
I
B
= 350 mA
I
= 300 mA
B
10
1
I
B
= 250 mA
I
= 200 mA
= 150 mA
B
I
B
I
= 100 mA
= 50 mA
B
I
B
0.1
0.0
0.2
V
0.4
0.6
0.8
1.0
1.2
0
4
8
12
16
20
, BASE−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
BE
Figure 1. Static Characteristic
Figure 2. Static Characteristic
10000
1000
100
V
CE
= 6 V
I = 10 I
C B
V
(sat)
BE
1000
V
(sat)
CE
10
10
1
10
100
1000
1
10
100
1000
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 3. DC Current Gain
Figure 4. Base−Emitter Saturation Voltage and
Collector−Emitter Saturation Voltage
100
10
1
1000
V
CE
= 6 V
f = 1 MHz
= 0
I
E
100
10
1
0.1
1
10
100
1000
0
1
10
100
V
CB
, COLLECTOR−BASE VOLTAGE (V)
I , COLLECTOR CURRENT (mA)
C
Figure 5. Output Capacitance
Figure 6. Current Gain Bandwidth Product
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−92 3 4.83x4.76 LEADFORMED
CASE 135AR
ISSUE O
DATE 30 SEP 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13879G
TO−92 3 4.83X4.76 LEADFORMED
PAGE 1 OF 1
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