KSC1845FTA [ONSEMI]
50 mA, 120 V NPN Epitaxial Bipolar Junction Transistor;型号: | KSC1845FTA |
厂家: | ONSEMI |
描述: | 50 mA, 120 V NPN Epitaxial Bipolar Junction Transistor 放大器 晶体管 |
文件: | 总6页 (文件大小:256K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NPN Epitaxial Silicon
Transistor
KSC1845
Features
• Audio Frequency Low−Noise Amplifier
• Complement to KSA992
• This is a Pb−Free Device
www.onsemi.com
MAXIMUM RATINGS (Values are at T = 25°C unless otherwise noted.)
A
Symbol
Parameter
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
Value
Unit
V
V
CBO
120
1. Emitter
2. Collector
3. Base
V
CEO
V
EBO
120
V
1
5
50
V
2
3
I
C
mA
mA
°C
°C
TO−92 3 4.83x4.76
LEADFORMED
CASE 135AR
I
B
Base Current
10
T
J
Junction Temperature
Storage Temperature
150
T
STG
−55 to 150
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
AC1
845X
YWW
THERMAL CHARACTERISTICS (Values are at T = 25°C unless otherwise
A
noted.) (Note 1)
Symbol
Parameter
Power Dissipation
Value
500
4
Unit
mW
P
D
Derate Above 25°C
mW/°C
°C/W
R
Thermal Resistance,
Junction−to−Ambient
250
q
JA
A
= Assembly Code
1. PCB size: FR−4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch)
C1845 = Device Code
= P / F / E / U
with minimum land pattern size.
X
YWW = Date Code
ORDERING INFORMATION
Device
KSC1845FTA
Package
Shipping
2000 / Fan−Fold
TO−92 3L
(Pb−Free)
© Semiconductor Components Industries, LLC, 2002
1
Publication Order Number:
April, 2021 − Rev. 2
KSC1845/D
KSC1845
ELECTRICAL CHARACTERISTICS (Values are at T = 25°C unless otherwise noted.)
A
Symbol
Parameter
Conditions
= 100 mA, I = 0
Min
120
120
5
Typ
−
Max
−
Unit
V
BV
BV
BV
Collector−Base Breakdown Voltage
Collector−Emitter Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cut−Off Current
I
I
CBO
CEO
EBO
C
A
= 1 mA, I = 0
−
−
V
C
B
I = 100 mA, I = 0
−
−
V
E
C
I
V
= 120 V, I = 0
−
−
50
50
−
nA
nA
CBO
CB
EB
CE
CE
CE
E
I
Emitter Cut−Off Current
V
V
V
V
= 5 V, I = 0
−
−
EBO
C
h
DC Current Gain
= 6 V, I = 0.1 mA
150
200
0.55
−
580
600
0.59
0.07
100
1.6
7
FE1
FE2
C
h
= 6 V, I = 1 mA
1200
0.65
0.30
−
C
V
BE
(on)
Base−Emitter On Voltage
Collector−Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
= 6 V, I = 1 mA
V
V
C
V
CE
(sat)
I = 10 mA, I = 1 mA
C B
f
T
V
V
V
= 6 V, I = 1 mA
50
−
MHz
pF
CE
CB
CE
C
C
= 30 V, I = 0, f = 1 MHz
2.5
−
ob
E
NF
Noise Figure
= −5 V, I = −1.0 mA,
−
dB
C
R = 100 kW, f = 1 kHz
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
hFE CLASSIFICATION
Classification
P
F
E
U
200~400
300~600
400~800
600~1200
h
FE2
www.onsemi.com
2
KSC1845
TYPICAL PERFORMANCE CHARACTERISTICS
10
8
1.0
I
= 16 mA
I
B
= 1.4 mA
I
B
= 1.2 mA
B
I
I
= 14 mA
= 12 mA
B
I
I
I
= 1.0 mA
= 0.8 mA
= 0.6 mA
B
B
B
0.8
0.6
0.4
0.2
0
B
I
B
I
B
I
B
= 10 mA
= 8 mA
= 6 mA
6
I
= 0.4 mA
= 0.2 mA
B
B
4
I
= 4 mA
= 2 mA
B
B
I
2
I
0
0
1
2
3
4
5
0
20
40
60
80
100
100
100
V
, COLLECTOR−EMITTER VOLTAGE (V)
V
, COLLECTOR−EMITTER VOLTAGE (V)
CE
CE
Figure 1. Static Characteristic
Figure 2. Static Characteristic
1000
900
800
700
600
500
400
300
200
100
0
100
10
V
CE
= 6 V
I = 10 I
C B
Pulse Test
Pulse Test
V
V
(sat)
(sat)
BE
1
CE
0.1
0.01
0.01
0.1
1
10
100
0.1
1
10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 3. DC Current Gain
Figure 4. Base−Emitter Saturation Voltage and
Collector−Emitter Saturation Voltage
10
10k
f = 1 MHz
= 0
V
CE
= 6 V
I
E
1k
1
100
10
0.1
1
10
, COLLECTOR−BASE VOLTAGE (V)
100
0
1
10
V
I , EMITTER CURRENT (mA)
E
CB
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
www.onsemi.com
3
KSC1845
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
100
10
800
V
= 6 V
CE
Pulse Test
700
600
500
400
300
200
100
0
1
0.1
0.01
0.4
0.5
V
0.6
0.7
0.8
0.9
0
25
50
75
100
125
150
175
, BASE−EMITTER VOLTAGE (V)
T , AMBIENT TEMPERATURE (°C)
a
BE
Figure 7. Collector Current vs. Base−Emitter Voltage
Figure 8. Power Derating
www.onsemi.com
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−92 3 4.83x4.76 LEADFORMED
CASE 135AR
ISSUE O
DATE 30 SEP 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13879G
TO−92 3 4.83X4.76 LEADFORMED
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号:
KSC1845J05Z
Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN
FAIRCHILD
KSC1845J18Z
Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN
FAIRCHILD
KSC1845P
Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN
FAIRCHILD
KSC1845PBU
Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, LEAD FREE, TO-92, 3 PIN
FAIRCHILD
KSC1845PD27Z
Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
FAIRCHILD
KSC1845PD74Z
Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
FAIRCHILD
KSC1845PD75Z
Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
FAIRCHILD
KSC1845PJ05Z
Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN
FAIRCHILD
KSC1845PJ18Z
Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN
FAIRCHILD
KSC1845PTA
Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, LEAD FREE, TO-92, 3 PIN
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明