KSC1845FTA [ONSEMI]

50 mA, 120 V NPN Epitaxial Bipolar Junction Transistor;
KSC1845FTA
型号: KSC1845FTA
厂家: ONSEMI    ONSEMI
描述:

50 mA, 120 V NPN Epitaxial Bipolar Junction Transistor

放大器 晶体管
文件: 总6页 (文件大小:256K)
中文:  中文翻译
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NPN Epitaxial Silicon  
Transistor  
KSC1845  
Features  
Audio Frequency LowNoise Amplifier  
Complement to KSA992  
This is a PbFree Device  
www.onsemi.com  
MAXIMUM RATINGS (Values are at T = 25°C unless otherwise noted.)  
A
Symbol  
Parameter  
CollectorBase Voltage  
CollectorEmitter Voltage  
EmitterBase Voltage  
Collector Current  
Value  
Unit  
V
V
CBO  
120  
1. Emitter  
2. Collector  
3. Base  
V
CEO  
V
EBO  
120  
V
1
5
50  
V
2
3
I
C
mA  
mA  
°C  
°C  
TO92 3 4.83x4.76  
LEADFORMED  
CASE 135AR  
I
B
Base Current  
10  
T
J
Junction Temperature  
Storage Temperature  
150  
T
STG  
55 to 150  
MARKING DIAGRAM  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
AC1  
845X  
YWW  
THERMAL CHARACTERISTICS (Values are at T = 25°C unless otherwise  
A
noted.) (Note 1)  
Symbol  
Parameter  
Power Dissipation  
Value  
500  
4
Unit  
mW  
P
D
Derate Above 25°C  
mW/°C  
°C/W  
R
Thermal Resistance,  
JunctiontoAmbient  
250  
q
JA  
A
= Assembly Code  
1. PCB size: FR4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch)  
C1845 = Device Code  
= P / F / E / U  
with minimum land pattern size.  
X
YWW = Date Code  
ORDERING INFORMATION  
Device  
KSC1845FTA  
Package  
Shipping  
2000 / FanFold  
TO92 3L  
(PbFree)  
© Semiconductor Components Industries, LLC, 2002  
1
Publication Order Number:  
April, 2021 Rev. 2  
KSC1845/D  
 
KSC1845  
ELECTRICAL CHARACTERISTICS (Values are at T = 25°C unless otherwise noted.)  
A
Symbol  
Parameter  
Conditions  
= 100 mA, I = 0  
Min  
120  
120  
5
Typ  
Max  
Unit  
V
BV  
BV  
BV  
CollectorBase Breakdown Voltage  
CollectorEmitter Breakdown Voltage  
EmitterBase Breakdown Voltage  
Collector CutOff Current  
I
I
CBO  
CEO  
EBO  
C
A
= 1 mA, I = 0  
V
C
B
I = 100 mA, I = 0  
V
E
C
I
V
= 120 V, I = 0  
50  
50  
nA  
nA  
CBO  
CB  
EB  
CE  
CE  
CE  
E
I
Emitter CutOff Current  
V
V
V
V
= 5 V, I = 0  
EBO  
C
h
DC Current Gain  
= 6 V, I = 0.1 mA  
150  
200  
0.55  
580  
600  
0.59  
0.07  
100  
1.6  
7
FE1  
FE2  
C
h
= 6 V, I = 1 mA  
1200  
0.65  
0.30  
C
V
BE  
(on)  
BaseEmitter On Voltage  
CollectorEmitter Saturation Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
= 6 V, I = 1 mA  
V
V
C
V
CE  
(sat)  
I = 10 mA, I = 1 mA  
C B  
f
T
V
V
V
= 6 V, I = 1 mA  
50  
MHz  
pF  
CE  
CB  
CE  
C
C
= 30 V, I = 0, f = 1 MHz  
2.5  
ob  
E
NF  
Noise Figure  
= 5 V, I = 1.0 mA,  
dB  
C
R = 100 kW, f = 1 kHz  
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
hFE CLASSIFICATION  
Classification  
P
F
E
U
200~400  
300~600  
400~800  
600~1200  
h
FE2  
www.onsemi.com  
2
KSC1845  
TYPICAL PERFORMANCE CHARACTERISTICS  
10  
8
1.0  
I
= 16 mA  
I
B
= 1.4 mA  
I
B
= 1.2 mA  
B
I
I
= 14 mA  
= 12 mA  
B
I
I
I
= 1.0 mA  
= 0.8 mA  
= 0.6 mA  
B
B
B
0.8  
0.6  
0.4  
0.2  
0
B
I
B
I
B
I
B
= 10 mA  
= 8 mA  
= 6 mA  
6
I
= 0.4 mA  
= 0.2 mA  
B
B
4
I
= 4 mA  
= 2 mA  
B
B
I
2
I
0
0
1
2
3
4
5
0
20  
40  
60  
80  
100  
100  
100  
V
, COLLECTOREMITTER VOLTAGE (V)  
V
, COLLECTOREMITTER VOLTAGE (V)  
CE  
CE  
Figure 1. Static Characteristic  
Figure 2. Static Characteristic  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
100  
10  
V
CE  
= 6 V  
I = 10 I  
C B  
Pulse Test  
Pulse Test  
V
V
(sat)  
(sat)  
BE  
1
CE  
0.1  
0.01  
0.01  
0.1  
1
10  
100  
0.1  
1
10  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 3. DC Current Gain  
Figure 4. BaseEmitter Saturation Voltage and  
CollectorEmitter Saturation Voltage  
10  
10k  
f = 1 MHz  
= 0  
V
CE  
= 6 V  
I
E
1k  
1
100  
10  
0.1  
1
10  
, COLLECTORBASE VOLTAGE (V)  
100  
0
1
10  
V
I , EMITTER CURRENT (mA)  
E
CB  
Figure 5. Collector Output Capacitance  
Figure 6. Current Gain Bandwidth Product  
www.onsemi.com  
3
KSC1845  
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)  
100  
10  
800  
V
= 6 V  
CE  
Pulse Test  
700  
600  
500  
400  
300  
200  
100  
0
1
0.1  
0.01  
0.4  
0.5  
V
0.6  
0.7  
0.8  
0.9  
0
25  
50  
75  
100  
125  
150  
175  
, BASEEMITTER VOLTAGE (V)  
T , AMBIENT TEMPERATURE (°C)  
a
BE  
Figure 7. Collector Current vs. BaseEmitter Voltage  
Figure 8. Power Derating  
www.onsemi.com  
4
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
TO92 3 4.83x4.76 LEADFORMED  
CASE 135AR  
ISSUE O  
DATE 30 SEP 2016  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON13879G  
TO92 3 4.83X4.76 LEADFORMED  
PAGE 1 OF 1  
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© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
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ADDITIONAL INFORMATION  
TECHNICAL PUBLICATIONS:  
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