KSC2383YTA [ONSEMI]
NPN 外延硅晶体管;
| 型号： | KSC2383YTA |
| 厂家： | 
ONSEMI |
| 描述： | NPN 外延硅晶体管 晶体管 |
| 文件： | 总5页 (文件大小：290K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN Epitaxial Silicon
Transistor
KSC2383
ABSOLUTE MAXIMUM RATINGS
(Values are at T = 25°C unless otherwise noted.)
A
www.onsemi.com
Symbol
Parameter
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
Value
Unit
V
V
CBO
V
CEO
V
EBO
160
160
V
6
V
I
C
1
0.5
A
I
B
Base Current
A
TO−92 3 LF
CASE 135AM
T
Junction Temperature
Storage Temperature
150
°C
°C
J
T
−55 to +150
STG
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
AC2
383X
YWW
(Values are at T = 25°C unless otherwise noted.) (Note 1)
A
Symbol
Parameter
Power Dissipation
Value
900
7.2
Unit
mW
P
D
Derate Above 25_C
mW/°C
°C/W
R
Thermal Resistance,
138
θ
JA
Junction−to−Ambient
1. PCB size: FR−4, 76 mm × 114 mm × 1.57 mm (3.0 inch × 4.5 inch × 0.062 inch)
with minimum land pattern size.
1: Emitter
2: Collector
3: Base
1
2
3
A
= Assembly Code
= Device Code
= O / Y
C2383
X
YWW
= Date Code
ORDERING INFORMATION
Device
Package
Shipping
KSC2383OTA
TO−92 3 LF
(Pb−Free)
2000 /
Fan−Fold
KSC2383YTA
TO−92 3 LF
(Pb−Free)
2000 /
Fan−Fold
© Semiconductor Components Industries, LLC, 2002
1
Publication Order Number:
March, 2021 − Rev. 3
KSC2383/D
KSC2383
ELECTRICAL CHARACTERISTICS
(Values are at T = 25°C unless otherwise noted.)
A
Symbol
Parameter
Collector Cut−Off Current
Emitter Cut−Off Current
Conditions
= 150 V, I = 0
Min.
−
Typ.
−
Max.
1
Unit
mA
mA
V
I
V
V
CBO
CB
E
I
= 6 V, I = 0
−
−
1
EBO
EB
C
BV
h
Collector−Emitter Breakdown Voltage
DC Current Gain
I
C
= 10 mA, I = 0
160
60
−
−
−
CEO
B
V
CE
= 5 V, I = 200 mA
−
320
1.5
0.75
−
FE
C
V
CE
(sat)
Collector−Emitter Saturation Voltage
Base−Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
I
C
= 500 mA, I = 50 mA
−
V
V
B
V
BE
(on)
V
CE
V
CE
V
CB
= 5 V, I = 5 mA
0.45
20
−
−
C
f
T
= 5 V, I = 200 mA
100
−
MHz
pF
C
C
= 10 V, I = 0, f = 1 MHz
20
ob
E
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
hFE CLASSIFICATION
Classification
R
O
Y
h
FE
60 ~ 120
100 ~ 200
160 ~ 320
TYPICAL PERFORMANCE CHARACTERISTICS
1000
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Emitter Common
T = 25°C
Emitter Common
A
V
CE
= 10 V
I
B
= 15 mA
I
B
= 10 mA
100
10
1
I
B
= 6 mA
V
CE
= 5 V
I
B
= 4 mA
I
B
= 3 mA
I
B
= 2.5 mA
I
= 2 mA
B
I
= 1.5 mA
B
I
= 1 mA
= 0.5 mA
B
I
B
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10
100
1000
V
CE
, Collector−Emitter Voltage (V)
I , Controller Current (mA)
C
Figure 1. Static Characteristic
Figure 2. DC Current Gain
1000
100
1
Emitter Common
T = 25°C
Emitter Common
T = 25°C
A
A
0.1
I
I
/ I = 10
B
C
V
V
= 10 V
= 5 V
CE
/ I = 5
B
C
0.01
CE
V
CE
= 1 V
10
0.001
1
10
100
1000
100
1000
I , Controller Current (mA)
C
I , Controller Current (mA)
C
Figure 3. DC Current Gain
Figure 4. Collector−Emitter Saturation Voltage
www.onsemi.com
2
KSC2383
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
1.0
0.8
0.6
0.4
0.2
0.0
1000
Emitter Common
Emitter Common
f = 1 MHz
T = 25°C
A
I
C
/ I = 10
B
100
10
1
0.0
0.2
0.4
0.6
0.8
1.0
1
10
100
1000
V
BE
, Base−Emitter Voltage (V)
V
CB
, Collector Base Voltage (V)
Figure 5. Base−Emitter On Voltage
Figure 6. Collector Output Capacitance
1000
100
10
10
1
Emitter Common
T = 25°C
I
Max. (Pulse)
1 ms
C
A
10 ms
100 ms
0.1
I
Max. = 1 A
C
DC T = 25°C
A
0.01
1
0.001
1
10
100
1000
1
10
100
1000
V
CE
, Collector−Emitter Voltage (V)
I , Collector Current (A)
C
Figure 7. Current Gain Bandwidth Product
Figure 8. Safe Operating Area
www.onsemi.com
3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−92 3 8.0x4.9 (LEADFORMED)
CASE 135AM
ISSUE B
DATE 14 JAN 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON14058G
TO−92 3 8.0X4.9 (LEADFORMED)
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
KSC241J
Keypad Switch, 1 Switches, SPST, Momentary-tactile, 0.05A, 32VDC, 3.5N, Solder Terminal, Surface Mount-straight
ITT
©2020 ICPDF网 联系我们和版权申明