KSC2752OSTU [ONSEMI]
NPN外延硅晶体管;
ONSEMI 
Is Now Part of
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
KSC2752
High Speed
High Voltage Swiching Industrial Use
TO-126
1. Emitter 2.Collector 3.Base
1
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Symbol
Parameter
Value
Units
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
500
V
V
CBO
CEO
EBO
400
7
V
I
I
I
0.5
A
C
1
0.25
1
A
CP
B
A
P
P
Collector Dissipation (T =25°C)
W
W
°C
°C
C
a
Collector Dissipation (T =25°C)
10
C
C
T
Junction Temperature
150
J
T
Storage Temperature
- 55 ~ 150
STG
* PW≤300µs, Duty Cycle≤10%
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Test Condition
Min.
400
450
Max.
Units
V
V
(sus)
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
I
I
= 0.3A, I = 0.06A, L = 10mH
V
V
CEO
C
C
B1
(sus)1
= 0.3A, I = -I = 0.06A
B1 B2
CEX
V
(off) = -5V, L =10mH, Clamped
BE
V
(sus)2
Collector-Emitter Sustaining Voltage
I
= 0.6A, I = 0.2A, I = -0.06A
400
V
CEX
C
B1
B2
V
V
V
V
V
(off) = -5V, L = 10mH, Clamped
BE
CB
CE
CE
CE
I
Collector Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
= 400V, I = 0
10
1
µA
mA
µA
CBO
E
I
= 400V, R = 51Ω, T = 125°C
BE C
CER
I
I
= 400V, R (off) = -1.5V
10
1
CEX1
CEX2
BE
= 400V, R (off) = -1.5V
mA
BE
@ T = 125°C
C
I
Emitter Cut-off Current
* DC Current Gain
V
= 5V, I = 0
10
80
µA
EBO
EB
C
h
h
V
V
= 5V, I = 0.05A
20
10
FE1
CE
CE
C
= 5V, I = 0.3A
C
FE2
V
V
(sat)
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Turn ON Time
I
I
= 0.3A, I = 0.06A
1
2
V
CE
BE
C
C
B
(sat)
= 0.3A, I = 0.06A
V
B
t
t
t
V
I
= 150V, I = 0.3A
1
µs
µs
µs
ON
CC
C
= -I = 0.06A, R = 500Ω
Storage Time
B1
B2 L
2.5
1
STG
F
PW = 50µs, Duty Cycle≤2%
Fall Time
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed
h
Classification
FE
Classification
R
O
Y
h
20 ~ 40
30 ~ 60
40 ~ 80
FE1
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Typical Characteristics
0.5
1000
100
10
I
= 50mA
VCE = 2V, 5V
Pulsed
IB = 45mA
IB = 40mA
IB = 35mA
IBB = 30mA
0.4
0.3
0.2
0.1
0.0
IB = 25mA
IB = 20mA
IB = 15mA
IB = 10mA
VCE = 5V
IB = 5mA
VCE = 2V
1
0
1
2
3
4
5
0.1
1
10
100
1000
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC current Gain
10
10
IC = 5 IB1 = -5 IB2
IC = 5 IB
Pulsed
tSTG
1
1
VBE(sat)
tF
tON
0.1
0.1
VCE(sat)
0.01
0.1
0.01
1
10
100
1000
10
100
1000
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Switching Time
10
1.0
0.8
0.6
0.4
0.2
0.0
IC(Pulse) MAX.
1
0.1
0.01
1E-3
1
10
100
1000
0
100
200
300
400
500
VCE[V], COLLECTOR-EMITTER VOLTAGE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
Figure 6. Reverse Bias Safe Operating Area
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Typical Characteristics (Continued)
160
140
120
100
80
16
14
12
10
8
60
6
40
4
20
2
0
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
TC[oC], CASE TEMPERATURE
TC[oC], CASE TEMPERATURE
Figure 7. Derating Curve of Safe Operating Area
Figure 8. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
8.30
7.70
3.45
3.05
4.00
3.80
11.20
10.80
14.20 MAX
3.20
1.35
1.95
1.55
1.70
1.50
1.00
E
D
0.85
3X
0.65
#1
0.60
0.45
M
3X
0.254
2.29
TOP VIEW
3°
SIDE VIEW
PRODUCTION
CODE
TERMINAL
LENGTH "D"
TERMINAL
LENGTH "E"
TSSTU
TSTU
NONE
(STD LENGTH)
3.45 - 4.05
2.36 - 2.96
6.45-7.45
5.36-6.36
FRONT VIEW
12.76 - 13.36
15.76-16.76
NOTES:
A. NO INDUSTRY STANDARD APPLIES TO THIS
PACKAGE
B. ALL DIMENSIONS ARE IN MILLIMETERS
C. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD
FLASH, AND TIE BAR PROTRUSIONS
D
FOR TERMINAL LENGTH "D", REFER TO TABLE
FOR TERMINAL LENGTH "E", REFER TO TABLE
E
F. DRAWING FILENAME: MKT-TO126AArev2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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