KSC3503DSTU [ONSEMI]
NPN外延硅晶体管;
| 型号： | KSC3503DSTU |
| 厂家： | 
ONSEMI |
| 描述： | NPN外延硅晶体管 局域网 放大器 PC 晶体管 |
| 文件： | 总6页 (文件大小：249K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
NPN Epitaxial Silicon
Transistor
KSC3503
1. Emitter
2. Collector
3. Base
Features
• High Voltage: V
= 300 V
CEO
TO−126−3LD
CASE 340AS
• Low Reverse Transfer Capacitance: C = 1.8 pF at V = 30 V
re
CB
• Excellent Gain Linearity for Low THD
• High Frequency: 150 MHz
MARKING DIAGRAM
• Full Thermal and Electrical Spice Models are Available
• Complement to KSA1381
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Audio, Voltage Amplifier and Current Source
• CRT Display, Video Output
• General Purpose Amplifier
AYWWZZ
C3503D
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Parameter
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Symbol
Ratings
300
300
5
Units
V
BV
BV
BV
I
CBO
CEO
EBO
C
V
V
100
200
mA
mA
I
CP
Total Device Dissipation, T = 25°C
P
C
7
1.2
W
W
C
T
C
= 125°C
A
= Assembly Location
Junction and Storage Temperature
T , T
−50 ~ +150
°C
YWW
ZZ
= Date Code
= Assembly Lot
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
C3503D = Specific Device Code
THERMAL CHARACTERISTICS (Note 1)
A
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
(T = 25°C unless otherwise noted)
Parameter
Symbol
Max.
Units
Thermal Resistance, Junction to Case
1. Device mounted on minimum pad size.
R
17.8
°C/W
q
JC
© Semiconductor Components Industries, LLC, 2008
1
Publication Order Number:
July, 2022 − Rev. 2
KSC3503/D
KSC3503
ELECTRICAL CHARACTERISTICS (Note 2) (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Collector−Base Breakdown Voltage
Collector−Emitter Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cut−Off Current
Conditions
= 10 mA, I = 0
Min.
300
300
5
Typ.
Max.
Unit
V
BV
BV
BV
I
I
CBO
CEO
EBO
C
E
= 1 mA, I = 0
V
C
B
I
= 10 mA, I = 0
V
E
C
I
V
= 200 V, I = 0
0.1
0.1
120
0.6
1
mA
mA
CBO
CB
EB
CE
E
I
Emitter Cut−Off Current
V
V
= 4 V, I = 0
C
EBO
h
FE
DC Current Gain
= 10 V, I = 10 mA
60
C
V
V
(sat)
(sat)
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
I
I
= 20 mA, I = 2 mA
V
V
CE
C
C
B
= 20 mA, I = 2 mA
BE
B
f
T
V
V
V
= 30 V, I = 10 mA
150
2.6
1.8
MHz
pF
pF
CE
CB
CB
C
C
C
= 30 V, f = 1 MHz
= 30 V, f = 1 MHz
ob
ob
Output Capacitance
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%
ORDERING INFORMATION
Part Number*
KSC3503DS
KSC3503DSTU
Marking
C3503D
C3503D
Package
Shipping
TO−126−3LD (Pb−Free)
TO−126−3LD (Pb−Free)
2000 Units / Bulk Box
1920 Units / Tube
*Suffix “−TU” means the tube packing, The Suffix “TU” could be replaced to other suffix character as packing method.
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2
KSC3503
TYPICAL CHARACTERISTICS
10
8
20
16
A
20μ
IB = 1
=
=
60μA
IB
IB
A
50μ
0μA
IB
IB
IB
=
=
=
10
A
80μ
0μA
IB
= 4
12
8
6
60μA
40μA
μA
30
IB
IB
=
=
4
20μA
IB
=
=
2
4
A
20μ
IB
0
μA
IB = 1
IB = 0
IB = 0
0
0
0
20
40
60
80
100
0
2
4
6
8
10
V , COLLECTOR−EMITTER VOLTAGE [V]
CE
V , COLLECTOR−EMITTER VOLTAGE [V]
CE
Figure 1. Static Characteristic
Figure 2. Static Characteristic
1000
10
1
VCE= 10V
IC= 10 IB
100
10
1
VBE(sat)
VCE(sat)
0.1
0.01
0.1
1
10
100
1000
0.1
1
10
100
I , COLLECTOR CURRENT [mA]
C
I , COLLECTOR CURRENT [mA]
C
Figure 3. DC Current Gain
Figure 4. Base−Emitter Saturation Voltage
Collector−Emitter Saturation Voltage
100
160
140
120
100
80
VCE= 10V
f = 1MHz
10
1
60
40
20
0.1
0
0.1
1
10
100
1000
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V , BASE−EMITTER VOLTAGE [V]
BE
V , COLLECTOR−BASE VOLTAGE [V]
CB
Figure 5. Base−Emitter On Voltage
Figure 6. Collector Output Capacitance
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3
KSC3503
TYPICAL CHARACTERISTICS
100
10
1
1000
f=1MHz
VCE= 30V
100
10
1
0.1
0.1
1
10
100
1000
0.1
1
10
100
1000
V , COLLECTOR−BASE VOLTAGE [V]
CB
I , COLLECTOR CURRENT [mA]
C
Figure 7. Reverse Transfer Capacitance
Figure 8. Current Gain Bandwidth Product
8
7
6
5
1000
100
10
I MAX. (Pulse)
C
I MAX.
C
500 ms
T
= 25°C
C
4
3
2
1
0
1ms
10ms
DC (T = 25°C)
a
T
= 125°C
DC (T = 25°C)
C
c
1
1
10
100
1000
0
25
50
75
100
125
150
175
V , COLLECTOR−EMITTER VOLTAGE [V]
CE
T, TEMPERATURE [°C]
Figure 9. Safe Operating Area
Figure 10. Power Derating
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−126−3LD
CASE 340AS
ISSUE O
DATE 30 SEP 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13817G
TO−126−3LD
PAGE 1 OF 1
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