KSC388CYTA [ONSEMI]
NPN外延硅晶体管;
| 型号： | KSC388CYTA |
| 厂家： | 
ONSEMI |
| 描述： | NPN外延硅晶体管 放大器 晶体管 |
| 文件： | 总6页 (文件大小：233K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
October 2015
KSC388
NPN Epitaxial Silicon Transistor
Features
• TV Final Picture IF Amplifier Applications
• GPE = 33 dB (Typical) at f = 45 MHz
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
• Non Suffix “-C” means Side Collector (1. Emitter 2. Base 3. Collector)
TO-92
1. Emitter
2. Base
3. Collector
1
1
2
2
3
3
Straight Lead
Bulk Packing
Bent Lead
Tape & Reel
Ammo Packing
Ordering Information
Part Number
Top Mark
Package
TO-92 3L
Packing Method
Ammo
KSC388CYTA
C388
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
30
25
V
4
50
V
mA
°C
°C
TJ
Junction Temperature
Storage Temperature
150
TSTG
-55 to 150
© 2002 Fairchild Semiconductor Corporation
KSC388 Rev. 1.4
www.fairchildsemi.com
Thermal Characteristics(1)
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
Parameter
Value
300
Unit
mW
Power Dissipation
Derate Above 25°C
2.4
mW/°C
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
416
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
BVCBO
BVCEO
ICBO
Parameter
Conditions
IC = 10 μA, IE = 0
Min. Typ. Max.
Unit
V
Collector-Base Breakdown Voltage
30
Collector-Emitter Breakdown Voltage IC = 5 mA, IB = 0
25
V
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
VCB = 30 V, IE = 0
0.1
0.1
μA
μA
IEBO
VEB = 3 V, IC = 0
hFE
VCE = 12.5 V, IC = 12.5 mA
20
200
0.2
1.5
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage IC = 15 mA, IB = 1.5 mA
V
V
Base-Emitter Saturation Voltage
IC = 15 mA, IB = 1.5 mA
VCB = 10 V, IE = 0,
f = 1 MHz
Cob
Output Capacitance
0.8
2
pF
VCB = 10 V, IC = 1 mA,
f = 30 MHz
Cc·rbb´
fT
Collector-Base Time Constant
Current Gain Bandwidth Product
Power Gain
25
ps
MHz
dB
VCE = 12.5 V, IC = 12.5 mA
300
28
VCE = 12.5 V, IC = 12.5 mA,
f = 45 MHz
GPE
33
36
© 2002 Fairchild Semiconductor Corporation
KSC388 Rev. 1.4
www.fairchildsemi.com
2
Typical Performance Characteristics
1000
100
10
16
VCE=12.5V
14
12
10
8
IB = 70μA
IB = 60μA
IB = 50μA
IB = 40μA
IB = 30μA
IB = 20μA
IB = 10μA
6
4
2
0
0.1
1
10
100
0
4
8
12
16
20
24
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC Current Gain
1000
100
10
10
IC=10IB
VCE=6V
1
0.1
1
0.1
0.0
0.01
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1
10
VBE[V], BASE-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage and
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
1000
100
10
10
VCE=12.5V
f = 1MHz
IE=0
Cib
Cob
1
0.1
0.1
0.1
1
10
100
1
10
100
VCB[V], COLLECTOR-BASE VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 5. Collector Input Capacitance
Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
© 2002 Fairchild Semiconductor Corporation
KSC388 Rev. 1.4
www.fairchildsemi.com
3
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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