KSC5027OTU [ONSEMI]

NPN芯片晶体管;
KSC5027OTU
型号: KSC5027OTU
厂家: ONSEMI    ONSEMI
描述:

NPN芯片晶体管

局域网 开关 晶体管
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KSC5027  
High Voltage and High Reliability  
High Speed Switching  
Wide SOA  
TO-220  
1.Base 2.Collector 3.Emitter  
1
NPN Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current  
1100  
V
V
CBO  
CEO  
EBO  
800  
7
V
I
I
3
10  
A
C
A
CP  
B
I
1.5  
A
P
Collector Dissipation ( T =25°C)  
50  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector-Emitter Sustaining Voltage  
I
I
I
= 1mA, I = 0  
1100  
800  
7
V
V
V
V
CBO  
CEO  
EBO  
C
C
E
E
BV  
BV  
= 5mA, I = 0  
B
= 1mA, I = 0  
C
V
(sus)  
I = 1.5A, I = -I = 0.3A  
800  
CEX  
C
B1  
B2  
L = 2mH, Clamped  
I
I
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
V
V
= 800V, I = 0  
10  
10  
40  
µA  
µA  
CBO  
EBO  
CB  
EB  
E
= 5V, I = 0  
C
h
h
V
V
= 5V, I = 0.2A  
10  
8
FE1  
FE2  
CE  
CE  
C
= 5V, I = 1A  
C
V
V
(sat)  
(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Output Capacitance  
I
I
= 1.5A, I = 0.3A  
2
V
V
CE  
C
C
B
= 1.5A, I = 0.3A  
1.5  
BE  
B
C
V
= 10V, I = 0, f = 1MHz  
60  
15  
pF  
MHz  
µs  
ob  
CB  
E
f
t
t
t
Current Gain Bandwidth Product  
Turn ON Time  
V
V
I
= 10V, I = 0.2A  
T
CE  
C
= 400V  
0.5  
3
ON  
CC  
= 5I = -2.5I = 2A  
Storage Time  
C
B1 B2  
µs  
STG  
F
R = 200Ω  
L
Fall Time  
0.3  
µs  
h
Classification  
FE  
Classification  
N
R
O
h
10 ~ 20  
15 ~ 30  
20 ~ 40  
FE1  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  
Typical Characteristics  
4.0  
3.6  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
1000  
100  
10  
VCE = 5V  
IB = 250mA  
IB = 200mA  
IB = 150mA  
IB = 100mA  
IB = 80mA  
IB = 60mA  
IB = 50mA  
IB = 40mA  
IB = 30mA  
IB = 20mA  
IB = 10mA  
IB = 0  
1
0.01  
0
1
2
3
4
5
6
7
8
9
10  
0.1  
1
10  
IC[A], COLLECTOR CURRENT  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
Figure 1. Static Characteristic  
Figure 2. DC current Gain  
10  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
IC = 5 IB  
VCE = 5V  
VBE(sat)  
1
VCE(sat)  
0.1  
0.01  
0.01  
0.1  
1
10  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
VBE[V], BASE-EMITTER VOLTAGE  
IC[A], COLLECTOR CURRENT  
Figure 3. Base-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
Figure 4. Base-Emitter On Voltage  
100  
10  
10  
VCC = 400V  
5.IB1 = -2.5.IB2 = IC  
tSTG  
ICMAX.(Pulse)  
ICMAX(Continuous)  
1
1
tON  
tF  
0.1  
0.1  
0.01  
1E-3  
0.01  
0.1  
1
10  
1
10  
100  
1000  
10000  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
IC[A], COLLECTOR CURRENT  
Figure 5. Switching Time  
Figure 6. Safe Operating Area  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  
Typical Characteristics (Continued)  
100  
80  
70  
60  
50  
40  
30  
20  
10  
0
IB2 = -0.3A  
10  
1
0.1  
0.01  
10  
100  
1000  
10000  
0
25  
50  
75  
100  
125  
150  
175  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
TC[oC], CASE TEMPERATURE  
Figure 7. Reverse Bias Operating Area  
Figure 8. Power Derating  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  
SUPPLIER "B" PACKAGE  
SHAPE  
‘ꢀꢁꢂꢂ  
3.50  
10.67  
9.65  
SUPPLIER "A" PACKAGE  
SHAPE  
E
3.40  
2.50  
16.30  
13.90  
IF PRESENT, SEE NOTE "D"  
E
16.51  
15.42  
9.40  
8.13  
E
1
2
3
4.10  
2.70  
[2.46]  
C
14.04  
12.70  
2.13  
2.06  
FRONT VIEWS  
H
4.70  
4.00  
1.62  
1.42  
1.62  
1.10  
2.67  
2.40  
"A1"  
8.65  
7.59  
1.00  
0.55  
SEE NOTE "F"  
ꢃƒ  
ꢄƒ  
ꢃƒ  
ꢄƒ  
6.69  
6.06  
OPTIONAL  
CHAMFER  
E
14.30  
11.50  
NOTE "I"  
BOTTOM VIEW  
NOTES:  
A) REFERENCE JEDEC, TO-220, VARIATION AB  
B) ALL DIMENSIONS ARE IN MILLIMETERS.  
C) DIMENSIONS COMMON TO ALL PACKAGE  
SUPPLIERS EXCEPT WHERE NOTED [ ].  
D) LOCATION OF MOLDED FEATURE MAY VARY  
(LOWER LEFT CORNER, LOWER CENTER  
AND CENTER OF THE PACKAGE)  
3
2
1
E DOES NOT COMPLY JEDEC STANDARD VALUE.  
F) "A1" DIMENSIONS AS BELOW:  
SINGLE GAUGE = 0.51 - 0.61  
DUAL GAUGE = 1.10 - 1.45  
G) DRAWING FILE NAME: TO220B03REV9  
H
PRESENCE IS SUPPLIER DEPENDENT  
I) SUPPLIER DEPENDENT MOLD LOCKING HOLES  
IN HEATSINK.  
0.60  
0.36  
2.85  
2.10  
BACK VIEW  
SIDE VIEW  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent  
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This  
literature is subject to all applicable copyright laws and is not for resale in any manner.  
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