KSC5338DTU [ONSEMI]
NPN型三重扩散平面硅晶体管;
| 型号： | KSC5338DTU |
| 厂家： | 
ONSEMI |
| 描述： | NPN型三重扩散平面硅晶体管 局域网 开关 晶体管 |
| 文件： | 总10页 (文件大小：506K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
May 2010
KSC5338D/KSC5338DW
NPN Triple Diffused Planar Silicon Transistor
Features
• High Voltage Power Switch Switching Application
• Wide Safe Operating Area
• Built-in Free-Wheeling Diode
• Suitable for Electronic Ballast Application
• Small Variance in Storage Time
• Two Package Choices : TO-220 or D2-PAK
Equivalent Circuit
D2-PAK
C
1
B
TO-220
E
1
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Units
V
V
V
A
Collector-Base Voltage
1000
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
450
12
5
10
ICP
IB
A
A
2
IBP
PC
TJ
TSTG
*Base Current (Pulse)
Power Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
4
75
150
A
W
°C
°C
- 55 to 150
* Pulse Test : Pulse Width = 5ms, Duty Cycle ≤ 10%
Thermal Characteristics
Symbol
Parameter
Rating
1.65
62.5
Units
°C/W
°C/W
°C
Rθjc
Rθja
Junction to Case
Thermal Resistance
Junction to Ambient
TL
Maximum Lead Temperature for Soldering
270
© 2010 Fairchild Semiconductor Corporation
KSC5338D/KSC5338DW Rev. B1
www.fairchildsemi.com
1
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Parameter
Test Condition
Min. Typ. Max. Units
Collector-Base Breakdown Voltage
IC=1mA, IE=0
1000
450
12
V
Collector-Emitter Breakdown Voltage IC=5mA, IB=0
Emitter-Base Breakdown Voltage
Collector Cut-off Current
V
V
IE=1mA, IC=0
VCB=800V, IE=0
10
µA
µA
µA
µA
µA
µA
ICES
Collector Cut-off Current
VCES=1000V, IEB=0 Ta=25°C
Ta=125°C
100
500
100
500
10
ICEO
Collector Cut-off Current
VCE=450V, IB=0
Ta=25°C
Ta=125°C
IEBO
hFE
Emitter Cut-off Current
DC Current Gain
VEB=10V, IC=0
VCE=1V, IC=0.8A Ta=25°C
Ta=125°C
15
10
6
25
14
9
VCE=1V, IC=2A
Ta=25°C
Ta=125°C
4
6
VCE=2.5V, IC=1A Ta=25°C
Ta=125°C
18
14
25
18
V
CE(sat) Collector-Emitter Saturation Voltage IC=0.8A, IB=0.08A Ta=25°C
0.35
0.55
0.47
0.9
0.9
1.8
0.22
0.3
0.8
0.65
0.9
0.8
550
60
0.5
0.75
0.75
1.1
1.5
2.5
0.5
0.6
1.0
0.9
V
V
V
V
V
V
V
V
V
V
V
V
pF
pF
MHz
V
V
V
Ta=125°C
Ta=25°C
Ta=125°C
IC=2A, IB=0.4A
IC=0.8A, IB=0.04A Ta=25°C
Ta=125°C
IC=1A, IB=0.2A
Ta=25°C
Ta=125°C
V
BE(sat) Base-Emitter Saturation Voltage
IC=0.8A, IB=0.08A Ta=25°C
Ta=125°C
IC=2A, IB=0.4A
Ta=25°C
1.0
0.9
750
100
Ta=125°C
Cib
Cob
fT
Input Capacitance
Output Capacitance
Current Gain Bandwidth Product
Diode Forward Voltage
VEB=10V, IC=0.5A, f=1MHz
VCB=10V, IE=0, f=1MHz
IC=0.5A,VCE=10V
11
VF
IF=1A, IC=1mA,
Ta=25°C
Ta=125°C
Ta=25°C
Ta=125°C
0.86
0.79
0.95
0.88
1.3
1.5
IE=0
IF=2A
V
tfr
Diode Forward Recovery Time
(di/dt=10A/µs)
IF=0.4A
IF=1A
IF=2A
460
360
325
ns
ns
ns
VCE(DSAT) Dynamic Saturation Voltage
IC=1A, IB1=100mA Ta=25°C
8
15
2.9
8
V
V
V
V
V
V
V
V
VCC=300V at 1 µs
Ta=125°C
IC=1A, IB1=100mA Ta=25°C
VCC=300V at 3 µs
Ta=125°C
IC=2A, IB1=400mA Ta=25°C
9
VCC=300V at 1 µs
Ta=125°C
17
1.9
8.5
IC=2A, IB1=400mA Ta=25°C
VCC=300V at 3 µs
Ta=125°C
© 2010 Fairchild Semiconductor Corporation
KSC5338D/KSC5338DW Rev. B1
www.fairchildsemi.com
2
Electrical Characteristics (Continued) Ta=25°C unless otherwise noted
Symbol Parameter Test Condition
RESISTIVE LOAD SWITCHING (D.C < 10%, Pulse Width=40µs)
Min Typ. Max. Units
tON
tSTG
tF
Turn On Time
Storage Time
Fall Time
IC=2.5A, IB1=500mA,
500
750
1.5
200
150
ns
µs
ns
ns
ns
µs
µs
ns
ns
ns
ns
µs
µs
ns
ns
IB2=-1A, VCC=250V, RL = 100Ω
1.2
100
100
150
1.4
1.7
90
150
120
150
tON
Turn On Time
IC=2A,
Ta=25°C
Ta=125°C
Ta=25°C
Ta=125°C
Ta=25°C
Ta=125°C
Ta=25°C
Ta=125°C
Ta=25°C
Ta=125°C
Ta=25°C
Ta=125°C
IB1=400mA,
IB2=-1A,
tSTG
tF
Storage Time
Fall Time
2.2
150
150
2.1
VCC=300V,
RL = 150Ω
tON
tSTG
tF
Turn On Time
Storage Time
Fall Time
IC=2.5A,
IB1=500mA,
I
B2=-5mA,
1.8
VCC=300V,
2.6
110
160
RL = 120Ω
150
INDUCTIVE LOAD SWITCHING (VCC=15V)
tSTG
Storage Time
IC=2.5A,
Ta=25°C
Ta=125°C
Ta=25°C
Ta=125°C
Ta=25°C
Ta=125°C
Ta=25°C
Ta=125°C
Ta=25°C
Ta=125°C
Ta=25°C
Ta=125°C
Ta=25°C
Ta=125°C
Ta=25°C
Ta=125°C
Ta=25°C
Ta=125°C
1.9
2.4
160
330
350
750
2.2
200
500
2.25
150
450
0.8
µs
µs
ns
ns
ns
ns
µs
µs
ns
ns
ns
ns
µs
µs
ns
ns
ns
ns
IB1=500mA,
IB2=-0.5A,
VZ=350V,
LC=300µH
tF
Fall Time
tC
Cross-over Time
Storage Time
Fall Time
tSTG
tF
IC=2A,
1.95
IB1=400mA,
IB2=-0.4A,
VZ=300V,
LC=200µH
2.9
120
270
300
700
0.6
1.0
70
tC
Cross-over Time
Storage Time
Fall Time
tSTG
tF
IC=1A,
IB1=100mA,
IB2=-0.5A,
VZ=300V,
LC=200µH
110
80
170
tC
Cross-over Time
130
© 2010 Fairchild Semiconductor Corporation
KSC5338D/KSC5338DW Rev. B1
www.fairchildsemi.com
3
Typical Characteristics
5
100
10
1
IB = 1A
VCE = 1V
0.9A
0.8A
0.7A
0.6A
0.5A
0.4A
0.3A
0.2A
TJ = +25oC
4
3
2
1
0
TJ = -25oC
TJ = 125oC
IB = 0.1A
IB = 0
0
2
4
6
8
10
0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC current Gain
100
10
1
10
VCE = 5V
TJ = +25oC
IC = 5IB
TJ = 125oC
TJ = -25oC
1
TJ = 125oC
TJ = +25OC
TJ = -25oC
0.1
0.01
0.1
1
10
1E-3
0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 3. DC current Gain
Figure 4. Collector-Emitter SaturationVoltage
10
10
IC = 5IB
IC = 10IB
TJ = 125oC
1
1
TJ = -25oC
TJ = +25oC
TJ = 125oC
TJ = +25oC
TJ = -25oC
0.1
0.1
1E-3
0.01
0.1
1
10
1E-3
0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 5. Collector-Emitter Saturation Voltage
Figure 6. Base-Emitter Saturation Voltage
© 2010 Fairchild Semiconductor Corporation
KSC5338D/KSC5338DW Rev. B1
www.fairchildsemi.com
4
Typical Characteristics (Continued)
10
2000
1000
IC = 10IB
f = 1MHz
Cib
TJ = -25oC
1
100
TJ = 125oC
Cob
TJ = +25oC
10
0.1
1
10
100
1E-3
0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
REVERSE VOLTAGE [V]
Figure 7. Base-Emitter Saturation Voltage
Figure 8. Collector Output Capacitance
500
10
V
= 250V
ICC=C 5IB1 = 2.5IB2
di/dt = 10A/µS
TC = 25oC
tSTG
450
1
0.1
400
350
300
250
tF
0.01
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
1
10
0.2
IF[A], FORWARD CURRENT
IC[A], COLLECTOR CURRENT
Figure 9. Forward Recovery Time
Figure 10. Switching Time
5
4
3
2
2000
1500
1000
500
0
IBon = IBoff
IBon = IBoff
V
= 15V
IC = 2A @ TJ=125oC
V
= 15V
VCC= 300V
VCC= 300V
LCZ = 200µH
LCZ = 200µH
IC = 2A @ TJ=125oC
IC = 1A @ TJ=125oC
IC = 1A @ TJ=125oC
IC = 2A @ TJ=25oC
IC = 2A @ TJ=25oC
IC = 1A @ TJ=25oC
IC = 1A @ TJ=25oC
0
5
10
15
20
2
4
6
8
10
12
14
16
18
20
hFE, FORCED GAIN
hFE, FORCED GAIN
Figure 11. Induction Storage Time
Figure 12. Inductive Crossover Time
© 2010 Fairchild Semiconductor Corporation
KSC5338D/KSC5338DW Rev. B1
www.fairchildsemi.com
5
Typical Characteristics (Continued)
1000
100
10
IBon = IBoff
IC = 2A @ TJ=125oC
V
= 15V
VCC= 300V
LCZ = 200µH
800
600
400
200
0
1µs
10µS
5ms
1ms
IC = 1A @ TJ=125oC
1
DC
IC = 2A @ TJ=25oC
IC = 1A @ TJ=25oC
0.1
0.01
2
4
6
8
10
12
14
16
18
20
10
100
1000
hFE, FORCED GAIN
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 13. Inductive Fall Time
Figure 14. Safe Operating Area
8
7
6
5
4
3
2
1
0
100
75
50
25
0
Vcc = 50V
V
(off) = -5V
LCBE= 1mH
Ic = 4 Ib
-5V
200
300
400
500
600
700
800
900
1000 1100
0
25
50
75
100
125
150
175
TC[OC], CASE TEMPERATURE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 15. Reverse Bias Safe Operating
Figure 16. Power Derating
6
Vcc = 50V
V
(off) = -5V
5
4
3
2
1
0
LCBE= 1mH
Ic = 5 Ib
Ic = 4 Ib
Ic = 3.3 Ib
Ic = 2.2 Ib
0
1
2
3
4
5
6
7
8
9
10
ICE[A], COLLECTOR CURRENT
Figure 17. RBSOA Saturation
© 2010 Fairchild Semiconductor Corporation
KSC5338D/KSC5338DW Rev. B1
www.fairchildsemi.com
6
Physical Dimensions
TO-220
Dimensions in Millimeters
© 2010 Fairchild Semiconductor Corporation
KSC5338D/KSC5338DW Rev. B1
www.fairchildsemi.com
7
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
®
*
AccuPower¥
Auto-SPM¥
Build it Now¥
CorePLUS¥
CorePOWER¥
CROSSVOLT¥
CTL¥
F-PFS¥
Power-SPM¥
PowerTrench®
PowerXS™
FRFET®
The Power Franchise®
Global Power ResourceSM
Green FPS¥
Green FPS¥ e-Series¥
Gmax¥
GTO¥
IntelliMAX¥
Programmable Active Droop¥
QFET®
QS¥
Quiet Series¥
RapidConfigure¥
¥
TinyBoost¥
TinyBuck¥
TinyCalc¥
Current Transfer Logic¥
DEUXPEED®
Dual Cool™
TinyLogic®
ISOPLANAR¥
MegaBuck¥
MICROCOUPLER¥
MicroFET¥
TINYOPTO¥
TinyPower¥
TinyPWM¥
TinyWire¥
TriFault Detect¥
TRUECURRENT¥*
PSerDes¥
Saving our world, 1mW/W/kW at a time™
SignalWise¥
EcoSPARK®
EfficientMax¥
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SMART START¥
®
SPM®
MicroPak2¥
MillerDrive¥
MotionMax¥
Motion-SPM¥
OptoHiT™
Fairchild®
STEALTH¥
Fairchild Semiconductor®
FACT Quiet Series¥
FACT®
SuperFET¥
SuperSOT¥-3
SuperSOT¥-6
SuperSOT¥-8
SupreMOS®
OPTOLOGIC®
UHC®
FAST®
OPTOPLANAR®
Ultra FRFET¥
UniFET¥
VCX¥
FastvCore¥
®
SyncFET¥
Sync-Lock™
FETBench¥
FlashWriter®
*
PDP SPM™
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XS™
FPS¥
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Definition of Terms
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Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
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The datasheet is for reference information only.
Advance Information
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Formative / In Design
First Production
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No Identification Needed
Obsolete
Rev. I49
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ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
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FAIRCHILD
KSC5345TU
Power Bipolar Transistor, 5A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
FAIRCHILD
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