KSC5402DTF [ONSEMI]
NPN硅晶体管的平面硅晶体管;
| 型号： | KSC5402DTF |
| 厂家： | 
ONSEMI |
| 描述： | NPN硅晶体管的平面硅晶体管 开关 晶体管 |
| 文件： | 总12页 (文件大小：337K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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December 2009
KSC5402D/KSC5402DT
NPN Silicon Transistor, Planar Silicon Transistor
Features
D-PAK
• High Voltage High Speed Power Switch Application
Equivalent Circuit
C
• Wide Safe Operating Area
1
• Built-in Free Wheeling Diode
TO-220
• Suitable for Electronic Ballast Application
B
• Small Variance in Storage Time
• Two Package Choices; D-PAK or TO-220
1
E
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
Units
1000
450
12
2
V
V
V
A
A
A
A
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
ICP
5
IB
1
IBP
*Base Current (Pulse)
2
PC
Power Dissipation(TC=25°C) : D-PAK*
30
50
W
W
: TO-220
TJ
Junction Temperature
Storage Temperature
150
°C
°C
TSTG
- 65 to 150
* Pulse Test: Pulse Width=5ms, Duty Cycle<10%
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Rating
Units
TO-220
D-PAK
4.17*
50
RθJC
RθJA
TL
Thermal Resistance
Junction to Case
Junction to Ambient
2.5
62.5
270
°C/W
°C/W
°C
Maximum Lead Temperature for Soldering Purpose
; 1/8” from Case for 5 Seconds
270
* Mounted on 1” square PCB (FR4 ro G-10 Material)
© 2009 Fairchild Semiconductor Corporation
KSC5402D/KSC5402DT Rev. C0
www.fairchildsemi.com
1
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Test Condition
IC=1mA, IE=0
Min. Typ. Max. Units
BVCBO
Collector-Base Breakdown
Voltage
1000 1090
V
V
V
BVCEO
BVEBO
ICES
Collector-Emitter Breakdown
Voltage
IC=5mA, IB=0
450
12
525
14
Emitter-Base Breakdown
Voltage
IE=1mA, IC=0
Collector Cut-off Current
VCES=1000V, IEB=0
TA=25°C
TA=125°C
TA=25°C
TA=125°C
0.03
1.2
0.3
15
100
500
100
500
100
μA
μA
ICEO
Collector Cut-off Current
VCE=450V, VB=0
μA
μA
μA
IEBO
hFE
Emitter Cut-off Current
DC Current Gain
VEB=10V, IC=0
0.01
29
VCE=1V, IC=0.4A
TA=25°C
TA=125°C
TA=25°C
TA=125°C
TA=25°C
TA=125°C
TA=25°C
TA=125°C
TA=25°C
TA=125°C
TA=25°C
TA=125°C
14
8
17
VCE=1V, IC=1A
6
9
4
6
VCE(sat)
Collector-Emitter Saturation
Voltage
IC=0.4, IB=0.04A
IC=1A, IB=0.2A
IC=0.4A, IB=0.04A
IC=1A, IB=0.2A
0.25
0.4
0.3
0.65
0.78
0.65
0.85
0.75
330
35
0.6
1.0
V
V
0.75
1.2
V
V
VBE(sat)
Base-Emitter Saturation
Voltage
1.0
V
0.9
V
1.1
V
1.0
V
Cib
Cob
fT
Input Capacitance
Output Capacitance
VEB=8V, IC=0, f=1MHz
VCB=10V, IE=0, f=1MHz
IC=0.5A, VCE=10V
500
100
pF
pF
MHz
Current Gain Bandwidth
Product
11
VF
Diode Forward Voltage
IF=1A
TA=25°C
TA=25°C
TA=125°C
TA=25°C
TA=125°C
0.86
0.75
0.6
1.5
1.2
V
V
V
V
V
IF=0.2A
IF=0.4A
0.8
1.3
0.65
© 2009 Fairchild Semiconductor Corporation
KSC5402D/KSC5402DT Rev. C0
www.fairchildsemi.com
2
Electrical Characteristics (Continued) TA=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min. Typ. Max. Units
tfr
Diode Froward Recvery Time
(di/dt=10A/μs)
IF=0.2A
IF=0.4A
IF=1A
540
520
480
ns
ns
ns
VCE(DSAT) Dynamic Saturation Voltage
IC=0.4A, IB1=40mA
VCC=300V
@ 1μs
@ 3μs
@ 1μs
@ 3μs
7.5
2.5
V
V
V
V
IC=1A, IB1=200mA
VCC=300
11.5
1.5
RESISTIVE LOAD SWITCHING (D.C < 10%, Pulse Width=20μs)
tON
Turn On Time
IC=1A,
IB1=200mA,
TA=25°C
TA=125°C
TA=25°C
TA=125°C
110
135
150
ns
ns
μs
μs
I
V
B2=150mA,
CC=300V,
tOFF
Turn Off Time
0.95
1.25
1.4
RL = 300Ω
INDUCTIVE LOAD SWITCHING (VCC=15V)
tSTG
Storage Time
IC=0.4A,
TA=25°C
TA=125°C
TA=25°C
TA=125°C
TA=25°C
TA=125°C
TA=25°C
TA=125°C
TA=25°C
TA=125°C
TA=25°C
TA=125°C
TA=25°C
TA=125°C
TA=25°C
TA=125°C
TA=25°C
TA=125°C
0.56
0.7
60
0.65
175
175
2.75
175
350
1.2
μs
μs
ns
ns
ns
ns
μs
μs
ns
ns
ns
ns
μs
μs
ns
ns
ns
ns
IB1=40mA,
IB2=200mA,
Vz=300V,
LC=200H
tF
Fall Time
75
tC
Cross-over Time
Storage Time
Fall Time
90
90
tSTG
tF
IC=0.8A,
IB1=160mA,
IB2=160mA,
Vz=300V,
LC=200H
3
110
180
125
185
1.1
tC
Cross-over Time
Storage Time
Fall Time
tSTG
tF
IC=1A,
IB1=200mA,
IB2=500mA,
VZ=300V,
LC=200μH
1.35
105
75
150
150
tC
Cross-over Time
125
100
© 2009 Fairchild Semiconductor Corporation
KSC5402D/KSC5402DT Rev. C0
www.fairchildsemi.com
3
Typical Performance Characteristics
3.0
IB = 1A
900mA
VCE = 1V
800mA
2.5
700mA
600mA
500mA
400mA
100
10
1
TJ=125℃
TJ=25℃
2.0
300mA
200mA
100mA
1.5
1.0
0.5
0.0
IB = 0
0
1
2
3
4
5
6
1E-3
0.01
0.1
1
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
VCE = 6V
IC = 5 IB
TJ=125℃
TJ=25℃
100
10
1
10
1
TJ=125℃
TJ=25℃
0.1
1E-3
0.01
0.1
1
1E-3
0.01
0.1
1
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 3. DC current Gain
Figure 4. Collector-Emitter Saturation Voltage
10
IC = 5 IB
IC = 10 IB
10
1
TJ=25℃
1
TJ=125℃
TJ=125℃
TJ=25℃
0.1
0.1
1E-3
0.01
0.1
1
1E-3
0.01
0.1
1
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 5. Base-Emitter Saturation Voltage
Figure 6. Collector-Emitter Saturation Voltage
© 2009 Fairchild Semiconductor Corporation
KSC5402D/KSC5402DT Rev. C0
www.fairchildsemi.com
4
Typical Performance Characteristics (Continued)
1000
100
10
10
f=1MHz
IC = 10 IB
Cib
1
TJ=25℃
TJ=125℃
Cob
0.1
1E-3
1
10
100
0.01
0.1
1
REVERSE VOLTAGE [V]
IC[A], COLLECTOR CURRENT
Figure 7. Base-Emitter Saturation Voltage
Figure 8. Collector Output Capacitance
550
2.0
TJ=25℃
1.5
2.0A
500
1.5A
1.0
1.0A
0.4A
IC=0.2A
0.5
450
0.0
0.5
1.0
0.0
1E-3
0.01
0.1
1
IF [A], FORWARD CURRENT
IC[A], COLLECTOR CURRENT
Figure 9. Typical Collector Saturation Region
Figure 10. Forward Recovery Time
10
IC=5IB1=2IB2
VCC=300V
PW=40μs
300
200
100
1
TJ=25℃
TJ=125℃
TJ=125℃
TJ=25℃
0.1
0.01
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1
Ic [A], COLLECTOR CURRENT
IFD [A], CURRENT
Figure 11. Diode Forward Voltage
Figure 12. Resistive Switching Time, ton
© 2009 Fairchild Semiconductor Corporation
KSC5402D/KSC5402DT Rev. C0
www.fairchildsemi.com
5
(Continued)
Typical Performance Characteristics
850
800
750
700
650
600
550
IC=10IB1=2IB2
VCC=15V
VZ=300V
IC=5IB1=2IB2
VCC=300V
PW=40μs
2.0
LC=200μH
1.5
TJ=125℃
TJ=125℃
TJ=25℃
TJ=25℃
1.0
0.4
0.6
0.8
1.0
1.2
1.4
0.4
0.6
0.8
1.0
1.2
1.4
Ic [A], COLLECTOR CURRENT
Ic [A], COLLECTOR CURRENT
Figure 13. Resistive Switching Time, toff
Figure 14. Inductive Switching Time, tsi
130
100
120
IC=10IB1=2IB2
VCC=15V
VZ=300V
LC=200μH
IC=10IB1=2IB2
90
VCC=15V
VZ=300V
LC=200μH
110
80
100
TJ=125℃
TJ=25℃
TJ=25℃
70
90
TJ=125℃
80
70
60
60
50
0.4
0.6
0.8
1.0
1.2
1.4
0.4
0.6
0.8
1.0
1.2
1.4
Ic [A], COLLECTOR CURRENT
Ic [A], COLLECTOR CURRENT
Figure 15. Inductive Switching Time, tfi
Figure 16. Inductive Switching Time, tc
450
IC=5IB1=5IB2
VCC=15V
VZ=300V
LC=200μH
400
350
300
250
200
150
100
50
30
TJ=125℃
TJ=125℃
25
TJ=25℃
IC=5IB1=5IB2
VCC=15V
VZ=300V
TJ=25℃
LC=200μH
20
0.4
0.6
0.8
1.0
1.2
1.4
0.4
0.6
0.8
1.0
1.2
1.4
Ic [A], COLLECTOR CURRENT
Ic [A], COLLECTOR CURRENT
Figure 17. Inductive Switching Time, tsi
Figure 18. Inductive Switching Time, tfi
© 2009 Fairchild Semiconductor Corporation
KSC5402D/KSC5402DT Rev. C0
www.fairchildsemi.com
6
(Continued)
Typical Performance Characteristics
450
1.6
1.4
1.2
1.0
0.8
0.6
IC=5IB1=5IB2
VCC=15V
VZ=300V
LC=200μH
400
350
300
250
200
150
100
50
TJ=125℃
TJ=125℃
TJ=25℃
TJ=25℃
IC=5IB1=2IB2
VCC=15V
VZ=300V
LC=200μH
0.4
0.6
0.8
1.0
1.2
1.4
0.4
0.6
0.8
1.0
1.2
1.4
Ic [A], COLLECTOR CURRENT
Ic [A], COLLECTOR CURRENT
Figure 19. Inductive Switching Time, tc
Figure 20. Inductive Switching Time, tsi
200
IC=5IB1=2IB2
VCC=15V
VZ=300V
LC=200μH
IC=5IB1=2IB2
VCC=15V
VZ=300V
LC=200μH
160
140
120
100
80
180
160
140
120
100
80
TJ=125℃
TJ=25℃
TJ=25℃
TJ=125℃
60
60
40
0.4
0.6
0.8
1.0
1.2
1.4
0.4
0.6
0.8
1.0
1.2
1.4
Ic [A], COLLECTOR CURRENT
Ic [A], COLLECTOR CURRENT
Figure 21. Inductive Switching Time, tfi
Figure 22. Inductive Switching Time, tc
40
10
1μs
10μs
30
20
10
0
50μs
5ms
1ms
1
DC
0.1
0.01
10
0
25
50
75
100
125
150
100
1000
TC[℃], CASE TEMPERATURE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 23. Forward Bias Safe Operating Area
Figure 24. Power Derating
© 2009 Fairchild Semiconductor Corporation
KSC5402D/KSC5402DT Rev. C0
www.fairchildsemi.com
7
Physical Dimension
TO-220
4.50 0.20
+0.10
9.90 0.20
(8.70)
1.30
–0.05
ø3.60 0.10
(45
°
)
1.27 0.10
2.54TYP
1.52 0.10
0.80 0.10
2.54TYP
+0.10
–0.05
0.50
2.40 0.20
[2.54 0.20
]
[2.54 0.20]
10.00 0.20
Dimensions in Millimeters
© 2009 Fairchild Semiconductor Corporation
KSC5402D/KSC5402DT Rev. C0
www.fairchildsemi.com
8
Physical Dimension (Continued)
D-PAK
Dimensions in Millimeters
www.fairchildsemi.com
© 2009 Fairchild Semiconductor Corporation
KSC5402D/KSC5402DT Rev. C0
9
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
PowerTrench®
PowerXS™
Programmable Active Droop¥
QFET®
QS¥
The Power Franchise®
AccuPower¥
Auto-SPM¥
Build it Now¥
CorePLUS¥
CorePOWER¥
CROSSVOLT¥
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™*
™*
FPS¥
F-PFS¥
FRFET®
Global Power ResourceSM
Green FPS¥
Green FPS¥ e-Series¥
Gmax™
TinyBoost¥
TinyBuck¥
Quiet Series¥
RapidConfigure¥
TinyCalc¥
TinyLogic®
GTO¥
IntelliMAX¥
ISOPLANAR¥
MegaBuck™
MICROCOUPLER¥
MicroFET¥
TINYOPTO¥
TinyPower¥
TinyPWM¥
TinyWire¥
TriFault Detect¥
TRUECURRENT¥*
PSerDes¥
™
Saving our world, 1mW/W/kW at a time™
SmartMax™
SMART START¥
SPM®
®
MicroPak¥
STEALTH™
SuperFET¥
SuperSOT¥-3
SuperSOT¥-6
SuperSOT¥-8
SupreMOS™
SyncFET™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
UHC®
Ultra FRFET¥
UniFET¥
VCX¥
VisualMax¥
XS™
OPTOPLANAR®
FAST®
®
FastvCore¥
Sync-Lock™
®
FETBench¥
PDP SPM™
Power-SPM¥
*
FlashWriter®
*
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Datasheet contains the design specifications for product development. Specifications may change in
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Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
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Rev. I41
© 2008 Fairchild Semiconductor Corporation
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