KSC5502TU [ONSEMI]
NPN 平面硅晶体管;
| 型号： | KSC5502TU |
| 厂家： | 
ONSEMI |
| 描述： | NPN 平面硅晶体管 晶体管 |
| 文件： | 总11页 (文件大小：340K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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January 2014
KSC5502
NPN Planar Silicon Transistor
Equivalent Circuit
C
Features
• High-Voltage Power Switch Mode Application
• Small Variance in Storage Time
B
1
• Wide Safe Operating Area
TO-220
• Suitable for Electronic Ballast Application
E
1.Base 2.Collector 3.Emitter
Ordering Information
Part Number
Marking
Package
Packing Method
KSC5502TU
J5502
TO-220
Tube
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)(1)
Base Current (DC)
1200
600
V
12
V
2
A
ICP
4
A
IB
1
A
IBP
Base Current (Pulse)(1)
2
150
A
TJ
Junction Temperature
°C
°C
mJ
TSTG
EAS
Storage Junction Temperature Range
Avalanche Energy (TJ = 25°C)
-65 to +150
2.5
Notes:
1. Pulse test: pulse width = 5 ms, duty cycle ≤ 10%
© 2008 Fairchild Semiconductor Corporation
KSC5502 Rev. 1.1.0
www.fairchildsemi.com
1
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Max.
50
Unit
W
PC
Collector Dissipation (TC = 25°C)
(2)
RθJC
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
2.5
85
°C/W
°C/W
(3)
RθJA
Notes:
2. RθJC test fixture under infinite cooling condition.
3. RθJA test board and fixture under natural convection, JESD51-10 recommended thermal test board.
Electrical Characteristics(4)
Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min. Typ. Max. Unit
BVCBO
Collector-Base Breakdown Voltage IC = 1 mA, IE = 0
1200 1350
V
V
V
Collector-Emitter Breakdown
IC = 5 mA, IB = 0
Voltage
BVCEO
BVEBO
600
750
Emitter-Base Breakdown Voltage IE = 500 μA, IC=0
12.0
13.2
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
TC = 25°C
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
100
500
100
500
10
ICES
Collector Cut-Off Current
VCES = 1200 V, VBE = 0
μA
ICEO
IEBO
Collector Cut-Off Current
Emitter Cut-Off Current
VCE = 600 V, IB = 0
VEB = 12 V, IC = 0
VCE = 1 V, IC = 0.2 A
μA
μA
15
8
28
27
40
4.0
3.0
12
6
8.7
hFE
DC Current Gain
VCE = 1 V, IC = 1 A
6.6
20
30
VCE = 2.5 V,
IC = 0.5 A
16
0.09
0.13
0.08
0.12
0.19
0.35
0.77
0.65
0.83
0.70
410
20
0.80
1.10
0.60
1.00
1.50
3.00
1.00
0.90
1.20
1.00
500
IC = 0.2 A, IB = 0.02 A
IC = 0.4 A, IB = 0.08 A
IC = 1 A, IB = 0.2 A
Collector-Emitter Saturation
Voltage
V
CE(sat)
V
V
IC = 0.4 A, IB = 0.08 A
IC = 1 A, IB = 0.2 A
VBE(sat) Base-Emitter Saturation Voltage
Cib
Input Capacitance
Output Capacitance
VEB = 8 V, IC = 0, f = 1 MHz
VCB = 10 V, IE = 0, f = 1 MHz
pF
pF
Cob
100
Note:
4. Pulse test : pulse width = 5 ms, duty cycle ≤ 10%
© 2008 Fairchild Semiconductor Corporation
KSC5502 Rev. 1.1.0
www.fairchildsemi.com
2
Electrical Characteristics (Continued)
Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min Typ. Max. Unit
at 1μs
at 3μs
at 1μs
at 3μs
11
IC = 0.4 A, IB1 = 80 mA,
VCC = 300 V
8
VCE(DSAT) Dynamic Saturation Voltage
V
23
IC = 1 A, IB1 = 200 mA,
VCC = 300 V
13
Resistive Load Switching (D.C < 10%, Pulse Width = 20 s)
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
250
260
3.3
350
4.0
IC = 0.4 A,
tON
tOFF
tON
Turn-On Time
Turn-Off Time
Turn-On Time
Turn-Off Time
ns
μs
ns
μs
IB1 = 80 mA,
IB2 = 0.2 A,
VCC = 300 V,
RL = 750 Ω
3.8
220
250
4.3
450
5.0
IC = 1 A,
IB1 = 160 mA,
IB2 = 160 mA,
VCC = 300 V,
RL = 300 Ω
tOFF
5.0
Inductive Load Switching (VCC = 15 V)
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
1.4
1.7
2.0
200
350
5.5
tSTG
Storage Time
Fall Time
μs
ns
ns
μs
ns
ns
IC = 0.4 A,
IB1 = 80 mA,
IB2 = 0.2 A,
VZ = 300 V,
LC = 200 μH
130
80
tF
210
130
4.9
tC
Cross-Over Time
Storage Time
Fall Time
tSTG
5.3
IC = 0.8 A,
IB1 = 160 mA,
IB2 = 160 mA,
VCC = 300 V,
LC = 200 μH
170
340
300
810
250
600
tF
tC
Cross-Over Time
© 2008 Fairchild Semiconductor Corporation
KSC5502 Rev. 1.1.0
www.fairchildsemi.com
3
Typical Performance Characteristics
VCE=1V
1A
900mA
800mA
700mA
600mA
3
2
1
0
100
10
1
TJ=125oC
TJ=25oC
500mA
400mA
300mA
200mA
IB=100mA
1
10
100
1000
0
1
2
3
4
5
6
7
IC[mA], COLLECTOR CURRENT)
VCE[V], COLLECTOR EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC current Gain
IC=10IB
IC=5IB
10
10
1
1
TJ=125oC
TJ=125oC
0.1
0.01
0.1
TJ=25oC
TJ=25oC
0.01
1
10
100
1000
1
10
100
1000
IC(mA), COLLECTOR CURRENT
IC(mA), COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Collector-Emitter Saturation Voltage
2
TJ=25oC
IC=5IB
2.0A
1.5A
1.0A
1
TJ=25oC
1
0.4A
TJ=125oC
IC=0.2A
0
0.1
1
10
100
1k
1
10
100
1k
IB[mA], BASE CURRENT
IC[mA], COLLECTOR CURRENT
Figure 5. Typical Collector Saturation Voltage
Figure 6. Base-Emitter Saturation Voltage
© 2008 Fairchild Semiconductor Corporation
KSC5502 Rev. 1.1.0
www.fairchildsemi.com
4
Typical Performance Characteristics (Continued)
1000
900
800
700
IC=5IB1=2IB2
VCC=300V
PW=20us
IC=10IB
600
500
400
300
1
TJ=25oC
TJ=125oC
TJ=125oC
200
TJ=25oC
0.1
100
0.3
1
10
100
1k
0.4
0.5 0.6 0.7 0.8 0.9
1
2
3
IC[mA], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 7. Base-Emitter Saturation Voltage
Figure 8. Resistive Switching Time, ton
1000
900
5
4.5
800
IC=5IB1=5IB2
VCC=300V
4
700
IC=5IB1=2IB2
PW=20us
VCC=300V
PW=20us
600
3.5
3
500
400
2.5
TJ=125oC
TJ=125oC
300
2
TJ=25oC
200
1.5
TJ=25oC
100
0.3
1
0.3
0.4
0.5 0.6 0.7 0.8 0.9
1
2
3
0.4
0.5 0.6 0.7 0.8 0.9
1
2
3
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 9. Resistive Switching Time, toff
Figure 10. Resistive Switching Time, ton
6
9
IC=5IB1=2IB2
VCC=15V
VZ=300V
5
4
8
IC=5IB1=5IB2
VCC=300V
PW=20us
7
6
LC=200uH
TJ=125oC
3
2
5
TJ=125oC
4
TJ=25oC
TJ=25oC
3
2
0.3
1
0.3
0.4
0.5 0.6 0.7 0.8 0.9
1
2
3
0.4
0.5 0.6 0.7 0.8 0.9
1
2
3
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 11. Resistive Switching Time, toff
Figure 12. Inductive Switching Time, tSTG
© 2008 Fairchild Semiconductor Corporation
KSC5502 Rev. 1.1.0
www.fairchildsemi.com
5
Typical Performance Characteristics (Continued)
400
600
500
IC=5IB1=2IB2
VCC=15V
300
IC=5IB1=2IB2
VCC=15V
VZ=300V
LC=200uH
VZ=300V
LC=200uH
200
TJ=25oC
TJ=25oC
400
300
100
90
80
TJ=125oC
70
TJ=125oC
200
60
50
40
30
20
0.3
100
0.3
0.4
0.5 0.6 0.7 0.8 0.9
1
2
3
0.4
0.5 0.6 0.7 0.8 0.9
1
2
3
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 13. Inductive Switching Time, tF
Figure 14. Inductive Switching Time, tc
2000
10
9
IC=5IB1=5IB2
VCC=15V
VZ=300V
IC=5IB1=5IB2
VCC=15V
VZ=300V
8
7
TJ=125oC
TJ=125oC
1000
900
LC=200uH
6
5
LC=200uH
800
700
600
500
4
3
TJ=25oC
400
300
200
TJ=25oC
2
100
90
80
70
60
50
0.3
1
0.3
0.4
0.5 0.6 0.7 0.8 0.9
1
2
3
0.4
0.5 0.6 0.7 0.8 0.9
1
2
3
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 15. Inductive Switching Time, tSTG
Figure 16. Inductive Switching Time, tF
5
4000
TJ=25oC
IC=5IB1=2IB2
VCC=15V
VZ=300V
LC=200uH
3000
IC=5IB1=5IB2
VCC=15V
VZ=300V
TJ=125oC
TJ=125oC
4
2000
LC=200uH
IC=0.8A
1000
900
800
3
700
600
500
TJ=25oC
2
400
300
200
1
IC=0.4A
0
100
0.3
10
11
12
0.4
0.5 0.6 0.7 0.8 0.9
1
2
3
hFE, FORCED GAIN @ VCE=1V & IC=0.8A
IC[A], COLLECTOR CURRENT
Figure 17. Inductive Switching Time, tc
Figure 18. Inductive Switching Time, tSTG
© 2008 Fairchild Semiconductor Corporation
KSC5502 Rev. 1.1.0
www.fairchildsemi.com
6
Typical Performance Characteristics (Continued)
500
400
300
200
100
0
300
TJ=25oC
TJ=25oC
IC=5IB1=2IB2
VCC=15V
VZ=300V
LC=200uH
IC=5IB1=2IB2
VCC=15V
VZ=300V
LC=200uH
TJ=125oC
TJ=125oC
250
200
IC=0.8A
IC=0.8A
150
IC=0.4A
100
IC=0.4A
50
0
10
11
12
10
11
12
hFE, FORCED GAIN @ VCE=1V & IC=0.8A
hFE, FORCED GAIN @ VCE=1V & IC=0.8A
Figure 19. Inductive Switching Time, tF
Figure 20. Inductive Switching Time, tc
60
50
40
30
20
10
0
1000
F=1MHz
C
ib
100
Cob
10
0
50
100
150
200
1
1
10
100
TC(oC), CASE TEMPERATURE
REVERSE VOLTAGE[V]
Figure 21. Capacitance
Figure 22. Power Derating
© 2008 Fairchild Semiconductor Corporation
KSC5502 Rev. 1.1.0
www.fairchildsemi.com
7
Physical Dimensions
TO-220
Figure 23. TO-220, MOLDED, 3-LEAD, JEDEC VARIATION AB (ACTIVE)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/TO/TO220B03.pdf.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-TO220B03.pdf.
© 2008 Fairchild Semiconductor Corporation
KSC5502 Rev. 1.1.0
www.fairchildsemi.com
8
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
Sync-Lock™
AccuPowerA
AX-CAP®*
F-PFSA
FRFET®
®
®*
Global Power ResourceSM
GreenBridgeA
Green FPSA
Green FPSA e-SeriesA
GmaxA
PowerTrench®
PowerXS™
Programmable Active DroopA
QFET®
BitSiCA
TinyBoost®
TinyBuck®
TinyCalcA
TinyLogic®
TINYOPTOA
TinyPowerA
TinyPWMA
TinyWireA
TranSiCA
Build it NowA
CorePLUSA
CorePOWERA
CROSSVOLTA
CTLA
QSA
GTOA
IntelliMAXA
Quiet SeriesA
RapidConfigureA
A
Current Transfer LogicA
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficientMaxA
ISOPLANARA
Making Small Speakers Sound Louder
and Better™
Saving our world, 1mW/W/kW at a time™
SignalWiseA
SmartMaxA
MegaBuckA
TriFault DetectA
TRUECURRENT®*
ꢀSerDesA
ESBCA
MICROCOUPLERA
MicroFETA
SMART STARTA
Solutions for Your SuccessA
SPM®
®
MicroPakA
Fairchild®
MicroPak2A
Fairchild Semiconductor®
FACT Quiet SeriesA
FACT®
UHC®
Ultra FRFETA
UniFETA
VCXA
VisualMaxA
VoltagePlusA
XS™
STEALTHA
MillerDriveA
SuperFET®
MotionMaxA
mWSaver®
SuperSOTA-3
FAST®
SuperSOTA-6
OptoHiTA
FastvCoreA
FETBenchA
FPSA
OPTOLOGIC®
OPTOPLANAR®
SuperSOTA-8
SupreMOS®
SyncFETA
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Advance Information
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Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
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changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Preliminary
No Identification Needed
Obsolete
First Production
Full Production
Not In Production
Rev. I66
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