KSC945CGTA [ONSEMI]
NPN外延硅晶体管;
| 型号： | KSC945CGTA |
| 厂家： | 
ONSEMI |
| 描述： | NPN外延硅晶体管 晶体管 |
| 文件： | 总7页 (文件大小：241K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
November 2014
KSC945
NPN Epitaxial Silicon Transistor
Features
• Audio Frequency Amplifier and High-Frequency OSC.
• Complimentary to KSA733
• Collector-Base Voltage: VCBO = 60 V
• High Current Gain Bandwidth Product: fT = 300 MHz (Tyical)
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
TO-92
1. Emitter 2. Base 3. Collector
1
Ordering Information
Part Number
KSC945YBU
KSC945YTA
Top Mark
C945
Package
Packing Method
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
Bulk
Ammo
Ammo
Ammo
Bulk
C945
KSC945GTA
KSC945CYTA
KSC945CGBU
KSC945CGTA
C945
C945
C945
C945
Ammo
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
60
50
V
5
V
150
mA
°C
°C
TJ
Junction Temperature
Storage Temperature
150
TSTG
-55 to 150
© 2002 Fairchild Semiconductor Corporation
KSC945 Rev. 1.1.0
www.fairchildsemi.com
Thermal Characteristics(1)
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
Parameter
Value
250
Unit
mW
Power Dissipation
Derate Above 25°C
2.0
mW/°C
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
500
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Parameter
Conditions
Min.
60
Typ.
Max.
Unit
V
Collector-Base Breakdown Voltage
IC = 100 μA, IE = 0
Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0
50
V
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
IE = 10 μA, IC = 0
5
V
VCB = 40 V, IE = 0
0.1
0.1
μA
μA
IEBO
VEB = 3 V, IC = 0
hFE
DC Current Gain
VCE = 6 V, IC = 1.0 mA
IC = 100 mA, IB = 10 mA
40
700
0.30
VCE(sat)
Collector-Emitter Saturation Voltage
0.15
300
V
fT
Current Gain Bandwidth Product
MHz
VCE = 6 V, IC = 10 mA
VCB = 6 V, IE = 0,
f = 1 MHz
Cob
Output Capacitance
2.5
4.0
pF
dB
VCE = 6 V, IC = 0.5 mA,
f = 1 kHz, RS = 500 Ω
NF
Noise Figure
hFE Classification
Classification
R
O
Y
G
L
hFE
40 ~ 80
70 ~ 140
120 ~ 240
200 ~ 400
350 ~ 700
© 2002 Fairchild Semiconductor Corporation
KSC945 Rev. 1.1.0
www.fairchildsemi.com
2
Typical Performance Characteristics
100
100
10
1
VCE = 6V
IB = 400μA
IB = 350μA
80
IB = 300μA
IB = 250μA
60
IB = 200μA
IB = 150μA
40
IB = 100μA
20
IB = 50μA
0
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
12
14
16
18
20
VCE[V], COLLECTOR-EMITTER VOLTAGE
VBE[V], BASE-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. Transfer Characteristic
1000
100
10
10
IC = 10 IB
VCE = 6V
1
VBE(sat)
0.1
VCE(sat)
0.01
1
10
100
1000
1
10
100
1000
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 3. DC Current Gain
Figure 4. Base-Emitter Saturation Voltage and
Collector-Emitter Saturation Voltage
1000
100
10
1
VCE = 6V
IE = 0
f = 1MHz
100
10
1
0.1
1
10
100
1000
0.1
1
10
100
VCB [V], COLLECTOR-BASE VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 5. Output Capacitance
Figure 6. Current Gain Bandwidth Product
© 2002 Fairchild Semiconductor Corporation
KSC945 Rev. 1.1.0
www.fairchildsemi.com
3
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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