KSD1616ALTA [ONSEMI]
NPN 外延硅晶体管;
| 型号： | KSD1616ALTA |
| 厂家： | 
ONSEMI |
| 描述： | NPN 外延硅晶体管 开关 晶体管 |
| 文件： | 总7页 (文件大小：295K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN Epitaxial Silicon
Transistor
KSD1616A
Features
• Audio Frequency Power Amplifier and Medium Speed Switching
• Complement to KSB1116/KSB1116A
• These are Pb−Free Devices
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ABSOLUTE MAXIMUM RATINGS
(Values are at T = 25°C unless otherwise noted.)
A
Symbol
Parameter
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Value
Unit
V
V
CBO
V
CEO
V
EBO
120
1. Emitter
2. Collector
3. Base
1
60
V
1
2
3
2
6
V
3
I
Collector Current (DC)
Collector Current (Pulse) (Note 1)
Junction Temperature
1
2
A
C
TO−92−3 LF
CASE 135AR
TO−92−3
CASE 135AN
I
A
CP
T
150
°C
°C
J
MARKING DIAGRAM
T
Storage Temperature
−55 to 150
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Pulse width ≤ 10 ms, duty cycle < 50%.
AD1
616Ax
YWW
THERMAL CHARACTERISTICS
(Values are at T = 25°C unless otherwise noted.)
A
Symbol
Parameter
Total Device Dissipation
Derate Above 25_C
Max
0.75
6
Unit
W
P
D
A
= Assembly Location
D1616Ax = Specific Device Code
x = G or Y
mW/°C
°C/W
R
Thermal Resistance,
160
Y
WW
= Year of Production
= Work Week Number
q
JA
Junction−to−Ambient
2. PCB size: FR−4, 76 mm × 114 mm × 1.57 mm (3.0 inch × 4.5 inch × 0.062 inch)
with minimum land pattern size.
ORDERING INFORMATION
Device
Package
Shipping
KSD1616AGBU
KSD1616AGTA
KSD1616AYTA
TO−92−3
(Pb−Free)
10,000 Units /
Bulk Bag
TO−92−3 LF
(Pb−Free)
2,000 Units /
Fan−Fold
TO−92−3 LF
(Pb−Free)
2,000 Units /
Fan−Fold
© Semiconductor Components Industries, LLC, 2002
1
Publication Order Number:
July, 2021 − Rev. 2
KSD1616A/D
KSD1616A
ELECTRICAL CHARACTERISTICS
(Values are at T = 25°C unless otherwise noted.)
A
Symbol
Parameter
Conditions
Min
120
60
Typ
−
Max
−
Unit
V
BV
BV
Collector−Base Breakdown Voltage
I
I
= 100 mA, I = 0
E
CBO
CEO
C
Collector−Emitter Breakdown
= 1 mA, I = 0
−
−
V
C
B
Voltage
BV
Emitter−Base Breakdown Voltage
Collector Cut−Off Current
Emitter Cut−Off Current
DC Current Gain
I = 100 mA, I = 0
6
−
−
−
−
V
EBO
E
C
I
V
= 60 V, I = 0
100
100
400
−
nA
nA
CBO
CB
EB
CE
CE
CE
E
I
V
V
V
V
= 6 V, I = 0
−
−
EBO
C
h
h
= 2 V, I = 100 mA
135
81
600
−
−
FE1
C
DC Current Gain
= 2 V, I = 1 A
−
FE2
C
V
Base−Emitter On Voltage (Note 3)
= 2 V, I = 50 mA
640
0.15
700
0.30
mV
V
BE(on)
CE(sat)
C
V
V
Collector−Emitter Saturation
Voltage (Note 3)
I
C
= 1 A, I = 50 mA
B
Base−Emitter Saturation Voltage
(Note 3)
I
C
= 1 A, I = 50 mA
−
0.9
1.2
V
BE(sat)
B
C
f
Output Capacitance
Current Gain Bandwidth Product
Turn−On Time
V
V
V
= 10 V, I = 0, f = 1 MHz
−
100
−
19
−
−
−
−
−
pF
MHz
ms
ob
CE
CE
CC
E
= 2 V, I = 100 mA
160
0.07
0.95
0.07
T
C
t
= 10 V, I = 100 mA,
C
ON
I
= −I = 10 mA,
B1
B2
t
Storage Time
−
ms
STG
V
BE(off)
= −2 V ~ −3 V
t
F
Fall Time
−
ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse test: pulse width < 350 ms, duty cycle ≤ 2% pulsed.
hFE CLASSIFICATION
Classification
Y
G
hFE1
135 ~ 270
200 ~ 400
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2
KSD1616A
TYPICAL PERFORMANCE CHARACTERISTICS
I
= 4.5 mA
B
I
B
= 4.0 mA
I
B
= 5.0 mA
100
80
1.0
0.8
I
= 3.5 mA
B
I
= 300 mA
B
I
B
= 3.0 mA
I
I
= 250 mA
= 200 mA
B
I
B
I
B
= 2.5 mA
= 2.0 mA
60
40
20
0
0.6
0.4
B
I
= 150 mA
B
B
I
B
I
B
= 1.5 mA
= 1.0 mA
I
= 100 mA
= 50 mA
0.2
0.0
I
I
B
= 0.5 mA
B
0
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
V
CE
, Collector−Emitter Voltage (V)
V
CE
, Collector−Emitter Voltage (V)
Figure 1. Static Characteristic
Figure 2. Static Characteristic
1000
100
10
1
V
CE
= 2 V
I = 20 I
C B
V
BE(sat)
0.1
10
1
V
CE(sat)
0.01
0.01
0.1
1
10
0.01
0.1
1
10
I , Collector Current (mA)
C
I , Collector Current (A)
C
Figure 3. DC Current Gain
Figure 4. Base−Emitter Saturation Voltage and
Collector−Emitter Saturation Voltage
1000
10
I
E
= 0
V
CC
= −10 V
f = 1 MHz
I = 10 I = −10 I
C B1 B2
100
1
t
STG
t
F
10
1
0.1
t
ON
0.01
1
10
100
400
−0.001
−0.01
−0.1
−1
V
CB
, Collector−Base Voltage (V)
I , Collector Current (A)
C
Figure 5. Collector Output Capacitance
Figure 6. Switching Time
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3
KSD1616A
TYPICAL CHARACTERISTICS (continued)
1000
100
10
V
CE
= 2 V
10 ms
1
0.1
PW = 1 ms
200 ms
DC
10
10
1
0.01
0.01
0.1
1
10
1
100
I , Collector Current (mA)
C
V
CE
, Collector−Emitter Voltage (V)
Figure 7. Current Gain Bandwidth Product
Figure 8. Safe Operating Area
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
25
50
75 100 125 150 175 200
T , Ambient Temperature (5C)
A
Figure 9. Power Derating
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−92 3 4.825x4.76
CASE 135AN
ISSUE O
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13880G
TO−92 3 4.825X4.76
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−92 3 4.83x4.76 LEADFORMED
CASE 135AR
ISSUE O
DATE 30 SEP 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13879G
TO−92 3 4.83X4.76 LEADFORMED
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
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, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
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