KSH45H11TF [ONSEMI]

PNP 外延硅晶体管;
KSH45H11TF
型号: KSH45H11TF
厂家: ONSEMI    ONSEMI
描述:

PNP 外延硅晶体管

开关 晶体管
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April 2015  
KSH45H11  
PNP Epitaxial Silicon Transistor  
Features  
Description  
General-purpose power and switching such as output or  
driver stages in applications D-PAK for surface mount  
applications.  
• Lead Formed for Surface Mount Application (No Suffix)  
• Straight Lead (I-PAK, “- I” Suffix)  
• Electrically Similar to Popular KSE45H  
• Fast Switching Speeds  
• Low Collector Emitter Saturation Voltage  
Applications  
• Switching Regulators  
• Converters  
D-PAK  
I-PAK  
1
1
1.Base 2.Collector 3.Emitter  
• Power Amplifiers  
Ordering Information  
Part Number  
KSH45H11TF  
KSH45H11TM  
KSH45H11ITU  
Top Mark  
KSH45H11  
KSH45H11  
KSH45H11-I  
Package  
Packing Method  
Tape and Reel  
Tape and Reel  
Rail  
TO-252 3L (DPAK)  
TO-252 3L (DPAK)  
TO-251 3L (IPAK)  
Absolute Maximum Ratings  
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-  
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-  
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The  
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.  
Symbol  
VCEO  
VEBO  
IC  
Parameter  
Value  
- 80  
Unit  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
- 5  
V
Collector Current (DC)  
Collector Current (Pulse)  
- 8  
A
ICP  
- 16  
A
Collector Dissipation (TC = 25°C)  
Collector Dissipation (TA = 25°C)  
Junction Temperature  
20  
PC  
W
1.75  
TJ  
150  
°C  
°C  
TSTG  
Storage Temperature  
- 55 to +150  
© 2002 Fairchild Semiconductor Corporation  
KSH45H11 Rev. 2.7  
www.fairchildsemi.com  
1
Electrical Characteristics(1)  
Values are at TA = 25°C unless otherwise noted.  
Symbol  
Parameter  
Conditions  
IC = - 30 mA, IB = 0  
VCE = - 80 V, IB = 0  
VEB = - 5 V, IC = 0  
Min.  
Typ.  
Max.  
Unit  
V
VCEO(sus) Collector-Emitter Sustaining Voltage  
- 80  
ICEO  
IEBO  
Collector Cut-Off Current  
Emitter Cut-Off Current  
- 10  
- 50  
μA  
μA  
VCE = - 1 V, IC = - 2 A  
VCE = - 1 V, IC = - 4 A  
IC = - 8 A, IB = - 0.4 A  
IC = - 8 A, IB = - 0.8 A  
VCE = - 10 V, IC = - 0.5 A  
VCB = - 10 V, f = 1 MHz  
60  
40  
hFE  
DC Current Gain  
VCE(sat) Collector-Emitter Saturation Voltage  
VBE(sat) Base-Emitter Saturation Voltage  
- 1  
V
V
- 1.5  
fT  
Cob  
tON  
tSTG  
tF  
Current Gain Bandwidth Product  
Collector Capacitance  
Turn-On Time  
40  
MHz  
pF  
ns  
230  
135  
500  
100  
IC = - 5 A,  
Storage Time  
ns  
IB1 = - IB2 = - 0.5 A  
Fall Time  
ns  
Note:  
1. Pulse test: pulse width 300 μs, duty cycle 2%.  
© 2002 Fairchild Semiconductor Corporation  
KSH45H11 Rev. 2.7  
www.fairchildsemi.com  
2
Typical Performance Characteristics  
-100  
-10  
1000  
VCE = -1V  
ICP(max)  
IC(max)  
100  
10  
1
-1  
-0.1  
-0.01  
-1  
-10  
-100  
-1000  
-0.01  
-0.1  
-1  
-10  
IC[A], COLLECTOR CURRENT  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
Figure 1. DC Current Gain  
Figure 2. Safe Operating Area  
25  
20  
15  
10  
5
0
0
25  
50  
75  
100  
125  
150  
175  
TC[oC], CASE TEMPERATURE  
Figure 3. Power Derating  
© 2002 Fairchild Semiconductor Corporation  
KSH45H11 Rev. 2.7  
www.fairchildsemi.com  
3
Physical Dimensions  
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Figure 4. 3-LEAD, TO-252, NOT COMPLIANT TO JEDEC TO-252 VAR. AB, SURFACE MOUNT (DPAK)  
© 2002 Fairchild Semiconductor Corporation  
KSH45H11 Rev. 2.7  
www.fairchildsemi.com  
4
Physical Dimensions (Continued)  
Figure 5. TO-251 (IPAK) MOLDED, 3-LEAD  
© 2002 Fairchild Semiconductor Corporation  
KSH45H11 Rev. 2.7  
www.fairchildsemi.com  
5
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OPTOPLANAR®  
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AttitudeEngine™  
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F-PFS¥  
®*  
FRFET®  
Global Power ResourceSM  
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TranSiC¥  
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QFET®  
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Making Small Speakers Sound Louder  
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Solutions for Your Success¥  
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