KSP10BU [ONSEMI]
NPN外延硅晶体管;
| 型号： | KSP10BU |
| 厂家： | 
ONSEMI |
| 描述： | NPN外延硅晶体管 PC 晶体管 |
| 文件： | 总7页 (文件大小：210K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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NPN Epitaxial Silicon
Transistor
KSP10
1:Base
Features
• VHF/UHF Transistor
1
2:Emitter
1
2
3:Collector
2
3
3
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
TO−92−3
CASE 135AN
TO−92 LF
CASE 135AR
ABSOLUTE MAXIMUM RATINGS
Values are at T = 25°C unless otherwise noted.
A
MARKING DIAGRAM
Symbol
Parameter
Collector−Base Voltage
Value
30
Unit
V
V
CBO
V
CEO
AKS
P10
YWW
Collector−Emitter Voltage
Emitter−Base Voltage
25
V
V
EBO
3.0
350
2.8
1.0
8.0
150
V
mW
mW/°C
W
PC
PC
Collector Power Dissipation (T = 25°C)
A
Derate above 25°C
Collector Power Dissipation (T = 25°C)
C
A
= Assembly Code
Derate above 25°C
Junction Temperature
Storage Temperature
W/°C
°C
KSP10 = Device Code
Y
= Year
T
J
WW
= Work Week
T
STG
−55 to
150
°C
ORDERING INFORMATION
Rth(j−c) Thermal Resistance, Junction to Case
Rth(j−a) Thermal Resistance, Junction to Ambient
125
357
°C/W
°C/W
Device
Package
Shipping
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
KSP10BU
TO−92 3
(Pb−Free)
10000 /
Bulk Bag
KSP10TA
TO−92 3 LF
(Pb−Free)
2000 /
Fan−Fold
© Semiconductor Components Industries, LLC, 2002
1
Publication Order Number:
June, 2022 − Rev. 3
KS910/D
KSP10
ELECTRICAL CHARACTERISTICS (Values are at T = 25°C unless otherwise noted.)
A
Symbol
Parameter
Conditions
= 100 mA, I = 0
Min
Max
Unit
BV
BV
BV
Collector−Base Breakdown Voltage
I
I
30
−
V
CBO
CEO
EBO
C
E
Collector−Emitter Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cut−Off Current
= 1 mA, I = 0
25
3.0
−
−
−
V
V
C
B
I = 10 mA, I = 0
E
C
I
V
= 25 V, I = 0
100
100
−
nA
nA
−
CBO
CB
EB
CE
E
I
Emitter Cut−Off Current
V
V
= 2 V, I = 0
−
EBO
C
h
FE
DC Current Gain
= 10 V, I = 4 mA
60
−
C
V
CE
(sat)
Collector−Emitter Saturation Voltage
Base−Emitter On Voltage
I
C
= 4 mA, I = 0.4 mA
0.5
0.95
−
V
B
V
BE(on)
V
V
V
V
= 10 V, I = 4 mA
−
V
CE
CE
CB
CB
C
f
T
Current Gain Bandwidth Product
Output Capacitance
= 10 V, I = 4 mA, f = 100 MHz
650
−
MHz
pF
pF
C
C
= 10 V, I = 0, f = 1 MHz
0.7
0.65
ob
E
Crb
Collector Base Feedback Capacitance
= 10 V, I = 0, f = 1 MHz
0.35
E
C
Collector Base Time Constant
V
CB
= 10 V, I = 4 mA, f = 31.8 MHz
−
9.0
ps
′
c·rbb
C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: PW ≤ 300 ms, Duty Cycle ≤ 2%.
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2
KSP10
TYPICAL CHARACTERISTICS
10000
1000
100
I
= 10 I
CC
B
B
V
= 10 V
CE
BE (sat)
V
1000
100
10
10
1
V
CE
(sat)
100
I , COLLECTOR CURRENT (mA)
1
10
1
10
100
1000
0.1
1000
I , COLLECTOR CURRENT (mA)
C
C
Figure 2. Base−Emitter Saturation Voltage and
Collector−Emitter Saturation Voltage
Figure 1. DC Current Gain
10000
1000
100
140
120
V
= 10 V
CE
f = 100 MHz
100
80
60
40
20
g
ib
−b
ib
10
100
1000
1
10
100
I , COLLECTOR CURRENT (mA)
C
f, FREQUENCY (MHz)
Figure 4. Rectangular Form
Figure 3. Current Gain Bandwidth Product
100
90
80
70
60
50
40
30
0
−10
b
ib
−20
1000 MHz
−30
−40
−g
ib
700
20
10
400
0
100
80
200
−50
−10
−20
−30
−60
0
10
20
30
40
g
50
(W)
60
70
90
100
1000
f, FREQUENCY (MHz)
ib
Figure 5. Polar Form
Figure 6. Rectangular Form
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3
KSP10
TYPICAL CHARACTERISTICS (CONTINUED)
90
80
70
60
50
6
5
4
400
200
600
3
2
700
100
40
30
−b
rb
1000 MHz
1
20
10
0
60
40
10
0
−10 −20 −30
1000
70
50
30 20
100
f, FREQUENCY (MHz)
g
fb
(W)
Figure 8. Rectangular Form
Figure 7. Polar Form
3
2
10
9
8
7
6
1
0
5
4
−1
b
ob
−2
−3
400
700
3
2
1
0
g
ob
−4
−5
1000 MHz
1000
100
−2.0 −1.6 −1.2 −0.8 −0.4 0.0 0.4 0.8 1.2 1.6 2.0
g
fb
(W)
f, FREQUENCY (MHz)
Figure 10. Rectangular Form
Figure 9. Polar Form
16
14
12
10
8
1000 MHz
700
6
4
2
400
200
100
0
4
6
8
2
0
g
ob
(W)
Figure 11. Polar Form
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−92 3 4.825x4.76
CASE 135AN
ISSUE O
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13880G
TO−92 3 4.825X4.76
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−92 3 4.83x4.76 LEADFORMED
CASE 135AR
ISSUE O
DATE 30 SEP 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13879G
TO−92 3 4.83X4.76 LEADFORMED
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
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