KSP2222ATA [ONSEMI]

NPN外延硅晶体管;
KSP2222ATA
型号: KSP2222ATA
厂家: ONSEMI    ONSEMI
描述:

NPN外延硅晶体管

晶体管
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中文:  中文翻译
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November 2014  
KSP2222A  
NPN General-Purpose Amplifier  
Features  
• Collector-Emitter Voltage: VCEO = 40 V  
• Available as PN2222A  
TO-92  
1. Emitter 2. Base 3. Collector  
1
2 3  
Ordering Information  
Part Number  
KSP2222ABU  
KSP2222ATA  
KSP2222ATF  
Marking  
Package  
TO-92 3L  
TO-92 3L  
TO-92 3L  
Packing Method  
KSP2222A  
KSP2222A  
KSP2222A  
Bulk  
Ammo  
Tape and Reel  
Absolute Maximum Ratings  
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-  
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-  
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The  
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
75  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
40  
V
6.0  
V
600  
mA  
°C  
°C  
TJ  
Junction Temperature  
Storage Temperature  
150  
TSTG  
-55 to +150  
© 2001 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
KSP2222A Rev. 1.2  
Thermal Characteristics(1)  
Values are at TA = 25°C unless otherwise noted.  
Symbol  
Parameter  
Value  
625  
5
Unit  
mW  
Power Dissipation by RθJA  
PD  
Derate Above 25°C  
mW/°C  
°C/W  
°C/W  
RθJC  
RθJA  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
83.3  
200  
Note:  
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.  
Electrical Characteristics  
Values are at TA = 25°C unless otherwise noted.  
Symbol  
BVCBO  
BVCEO  
BVEBO  
ICBO  
Parameter  
Conditions  
IC = 10 μA, IE = 0  
Min.  
75  
Max.  
Unit  
V
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0  
40  
V
Emitter-Base Breakdown Voltage  
Collector Cut-Off Current  
Emitter Cut-Off Current  
IE = 10 μA, IC = 0  
6.0  
V
VCB = 60 V, IE = 0  
0.01  
10  
μA  
nA  
IEBO  
VEB = 3.0 V, IC = 0  
VCE = 10 V, IC = 0.1 mA  
VCE = 10 V, IC = 1 mA  
VCE = 10 V, IC = 10 mA  
VCE = 10 V, IC = 150 mA(2)  
VCE = 10 V, IC = 500 mA(2)  
IC = 150 mA, IB = 15 mA  
IC = 500 mA, IB = 50 mA  
IC = 150 mA, IB = 15 mA  
IC = 500 mA, IB = 50 mA  
35  
50  
hFE  
DC Current Gain  
75  
100  
40  
300  
0.3  
1.0  
1.2  
2.0  
VCE(sat) Collector-Emitter Saturation Voltage(2)  
VBE(sat) Base-Emitter Saturation Voltage(2)  
V
V
0.6  
IC = 20 mA, VCE = 20 V,  
f = 100 MHz  
fT  
Current Gain Bandwidth Product  
Output Capacitance  
Turn-On Time  
300  
MHz  
pF  
VCB = 10 V, IE = 0,  
f = 1.0 MHz  
Cob  
tON  
tOFF  
NF  
8
35  
285  
4
VCC = 30 V, IC = 150 mA,  
IB1 = 15 mA, VBE(off) = 0.5 V  
ns  
VCC = 30 V, IC = 150 mA,  
IB1 = IB2 = 15 mA  
Turn-Off Time  
ns  
IC = 100 μA, VCE = 10 V,  
RS = 1 kΩ, f = 1.0 kHz  
Noise Figure  
dB  
Note:  
2. Pulse test: Pulse width 300 μs, duty cycle 2%  
© 2001 Fairchild Semiconductor Corporation  
KSP2222A Rev. 1.1.0  
www.fairchildsemi.com  
2
Physical Dimensions  
D
Figure 1. 3-Lead, TO-92, JEDEC TO-92 Compliant Straight Lead Configuration, Bulk Type  
© 2001 Fairchild Semiconductor Corporation  
KSP2222A Rev. 1.1.0  
www.fairchildsemi.com  
3
Physical Dimensions (Continued)  
Figure 2. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo, Tape and Reel Type  
© 2001 Fairchild Semiconductor Corporation  
KSP2222A Rev. 1.1.0  
www.fairchildsemi.com  
4
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Rev. I72  
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