KST2907AMTF [ONSEMI]
PNP外延硅晶体管;
| 型号： | KST2907AMTF |
| 厂家： | 
ONSEMI |
| 描述： | PNP外延硅晶体管 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：325K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
February 2015
KST2907A
PNP Epitaxial Silicon Transistor
3
Features
• General-Purpose Transistor
2
SOT-23
1
1. Base 2. Emitter 3. Collector
Ordering Information
Part Number
Marking
Package
Packing Method
KST2907AMTF
2F
SOT-23 3L
Tape and Reel
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
-60
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
-60
V
-5
V
-600
150
mA
°C
TSTG
Storage Temperature
Thermal Characteristics(1)
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
Parameter
Max.
350
2.8
Unit
mW
Total Device Dissipation
Derate Above 25°C
mW/°C
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
357
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
© 2002 Fairchild Semiconductor Corporation
KST2907A Rev. 1.5
www.fairchildsemi.com
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Parameter
Conditions
Min.
-60
-60
-5
Max.
-0.01
300
Unit
V
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage(2) IC = -10 mA, IB = 0
IC = -10 μA, IE = 0
V
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
IE = -10 μA, IC = 0
V
VCB = -50 V, IE = 0
μA
VCE = -10 V, IC = -0.1 mA
VCE = -10 V, IC = -1.0 mA
VCE = -10 V, IC = -10 mA
VCE = -10 V, IC = -150 mA(2)
VCE = -10 V, IC = -500 mA(2)
IC = -150 mA, IB = -15 mA
IC = -500 mA, IB = -50 mA
IC = -150 mA, IB = -15 mA
IC = -500 mA, IB = -50 mA
75
100
100
100
50
hFE
DC Current Gain
-0.4
-1.6
-1.3
-2.6
VCE(sat) Collector-Emitter Saturation Voltage(2)
VBE(sat) Base-Emitter Saturation Voltage(2)
V
V
IC = -50 mA, VCE = -20 V,
f = 100 MHz
fT
Current Gain Bandwidth Product
Output Capacitance
Turn-On Time
200
MHz
pF
VCB = -10 V, IE = 0,
f = 1.0 MHz
Cob
tON
tOFF
8
VCC = -30 V, IC = -150 mA,
IB1 = -15 mA
50
ns
VCC = -6 V, IC = -150 mA,
IB1 = IB2 = -15mA
Turn-Off Time
110
ns
Note:
2. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.
© 2002 Fairchild Semiconductor Corporation
KST2907A Rev. 1.5
www.fairchildsemi.com
2
Typical Performance Characteristics
1000
-10
VCE = 10V
IC = 10 IB
VBE(sat)
-1
100
-0.1
VCE(sat)
10
-0.01
-1
-10
-100
-1000
-1
-10
-100
-1000
IC[A], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 1. DC Current Gain
Figure 2. Collector-Emitter Saturation Voltage and
Base-Emitter Saturation Voltage
12
10
8
1000
IE = 0
f = 1MHz
VCE = -20V
100
6
4
2
10
0
-1
-10
-100
-1000
-1
-10
-100
IC[mA], COLLECTOR CURRENT
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 3. Output Capacitance
Figure 4. Current Gain Bandwidth Product
© 2002 Fairchild Semiconductor Corporation
KST2907A Rev. 1.5
www.fairchildsemi.com
3
Physical Dimensions
0.95
2.92 0.20
3
1.40
+0.20
-0.15
1.30
2.20
1.00
1
2
0.60
0.37
(0.29)
0.95
1.90
0.20
A B
1.90
LAND PATTERN
RECOMMENDATION
SEE DETAIL A
1.20 MAX
(0.93)
0.10
0.00
0.10
C
C
2.40 0.30
NOTES: UNLESS OTHERWISE SPECIFIED
GAGE PLANE
A) REFERENCE JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE INCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 1994.
0.23
0.08
0.25
0.20 MIN
E) DRAWING FILE NAME: MA03DREV10
SEATING
PLANE
(0.55)
SCALE: 2X
Figure 5. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE
© 2002 Fairchild Semiconductor Corporation
KST2907A Rev. 1.5
www.fairchildsemi.com
4
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Datasheet contains the design specifications for product development. Specifications may change
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changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Preliminary
No Identification Needed
Obsolete
First Production
Full Production
Not In Production
Rev. I73
© Fairchild Semiconductor Corporation
www.fairchildsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
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