L272AM [ONSEMI]

双路运算放大器;
L272AM
型号: L272AM
厂家: ONSEMI    ONSEMI
描述:

双路运算放大器

放大器 PC 光电二极管 运算放大器
文件: 总11页 (文件大小:351K)
中文:  中文翻译
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November 2013  
L272 / L272A  
Dual Power Operational Amplifier  
Features  
Descriptin  
• Output Current up to 0.7 A  
The L272 a272A e high-power dual operational  
amplirs provid in MDIP 8-lead package. The oper-  
atial mplifier idesigned for low-impeance loads  
and delivs output current up to 0.7 A. TL272A offers  
tighter speccations for input bias current, input offset  
voage, and input offset current. The L272 and L272A  
an be sed in a wide range of applications, including  
owsupply, VCR, monitor, ervo amplifier, compact  
di, etc.  
• Operates at Low Voltage (VS(MIN) = 4 V)  
• Low Saturation Voltage (IP = 0.5 A, VO = 1.5 V)  
• Thermal Shutdown (TSD = 160°C)  
• Ground-Compatible Inputs  
• Large Common Mode & Differential Mode Range  
Applications  
• Servo Amplifier  
• Power Supply  
• Compact Disc  
• VCR  
MDIP 8L  
• Monitor  
1
Ordering Infor
Part Num
L27
Ong Temperate Range Top Mark  
Package  
MDIP 8L  
MDIP 8L  
Packing Method  
L272M  
Rail  
Rail  
-40 to +85°C  
L272
L272AM  
Block Diagram  
OUT1  
IN 1-  
1
8
7
6
-
+
V
CC  
2
3
4
IN 1+  
IN 2+  
OUT2  
/GND  
+
V
5
EE  
IN 2-  
(MDIP 8L)  
Figure 1. Block Diagram  
© 2001 Fairchild Semiconductor Corporation  
L272 / L272A Rev. 1.2.0  
www.fairchildsemi.com  
1
Pin Descriptions  
Pin Number  
Name  
Description  
1
2
3
4
5
6
7
8
OUTPUT1  
VCC  
Amplifier Output 1  
Positive Supply Voltage  
Amplifier Output 2  
OUTPUT2  
VEE/GND  
INPUT-2  
INPUT+2  
INPUT+1  
INPUT-1  
Negative Supply Voltage (GND)  
Amplifier Negative Input 2  
Amplifier Positive Input 2  
Amplifier Positive Input 1  
Amplifier Negative Input 1  
Absolute Maximum Ratings(1)  
Stresses exceeding the absolute maximum ratings may damge the dee. The device may not funcn or be opera-  
ble above the recommended operating conditions and stresing the parts tthese levels is not recommended. In addi-  
tion, extended exposure to stresses above the recommnded operating conditions may affect device reliability. The  
absolute maximum ratings are stress ratings only. Values at TA = 25°C unless otherwise noted.  
Symbol  
VCC  
Parameter  
Value  
Unit  
V
Supply Voltage  
Input Voltage  
40  
VS  
VI  
V
VI(DIFF)  
IO  
Differential Input Volta
VS  
V
DC Output Cur
0.7  
A
IP  
Peak OutpuCurreon-Repetitive)  
Operating Temperature Range  
StorJunction Temperature Range  
1
A
TOP  
-40 to 85  
-40 to 150  
°C  
°C  
TSTG, TJ  
Note:  
1. The “Absximuatings” are those values beyond which the safety of the device cannot be guaranteed.  
The device be operated at these limits. The parametric values defined in the Electrical Characteristics  
tables are ed at the absolute maximum ratings.  
Thermal Characteristics  
Values are at TA = 25°C unless otherwise noted.  
Symbol  
PD  
Parameter  
Total Power Dissiption (TA = 50°C)  
Thermal Resistance, Junction to Ambient  
Value  
1
Unit  
W
RθJA  
100  
°C/W  
© 2001 Fairchild Semiconductor Corporation  
L272 / L272A Rev. 1.2.0  
www.fairchildsemi.com  
2
Electrical Characteristics (L272)  
VCC = +12 V, VEE = -12 V; Values are at TA = 25°C unless otherwise noted.  
Symbol  
Parameter  
Conditions  
Min.  
Typ.  
Max.  
Unit  
VS  
Supply Voltage (VCC - VEE  
)
4
28  
V
VO = VCC/2,  
VCC = 24 V, VEE = 0 V  
8.0  
7.5  
12.0  
11.0  
IS  
Supply Current  
mA  
VO = VCC/2,  
VCC = 12 V, VEE = 0 V  
IBIAS  
VIO  
IIO  
Input Bias Current  
Input Offset Voltage  
Input Offset Current  
Slew Rate  
0.3  
15  
50  
1
2.5  
60  
μA  
mV  
nA  
250  
SR  
VIN = 1VPP, UniGain  
V/μs  
kHz  
kΩ  
GBW  
RI  
Gain-Bandwidth Product  
Input Resistance  
350  
500  
65  
GV  
Large-Signal Voltage Gain  
Input Noise Voltage  
Input Noise Current  
VO() = 10 V  
B = z  
75  
10  
dB  
eN  
μV  
IN  
B = 20 kz  
00  
75  
pA  
CMRR  
Common Mode Rejection Ratio  
60  
54  
dB  
C +15 V, VEE = -15 V  
PSRR  
VO  
Supply Voltage Rejectio
62  
23.0  
22.5  
60  
dB  
V
V
CC = +5 V, VEE = -5 V  
VCC = 24 V, VE= 0 V,  
IP = 0.1 A  
20  
21.0  
Output VoltagSwing  
VCC = 24 V, VE= 0 V,  
IP = 0.5 A  
f = 1 kHz, RL = 10 Ω,  
GV = 30 dB  
CS  
Chaparatio
dB  
%
f = 1 kHz, GV = 1 dB,  
RL = ∞  
THD  
TSD  
Total HDistortion  
0.5  
al Shutdown  
erature(2)  
160  
°C  
Note:  
2. Guaranteed by design; not 100% tested in production.  
© 2001 Fairchild Semiconductor Corporation  
L272 / L272A Rev. 1.2.0  
www.fairchildsemi.com  
3
Electrical Characteristics (L272A)  
VCC = +12 V, VEE = -12 V; Values are at TA = 25°C unless otherwise noted.  
Symbol  
Parameter  
Conditions  
Min.  
Typ.  
Max.  
Unit  
VS  
Supply Voltage (VCC - VEE  
)
4
28  
V
VO = VCC/2  
VCC = 24 V, VEE = 0 V  
8.0  
7.5  
12.0  
11.0  
mA  
mA  
IS  
Supply Current  
VO = VCC/2,  
VCC = 12 V, VEE = 0 V  
IBIAS  
VIO  
IIO  
Input Bias Current  
Input Offset Voltage  
Input Offset Current  
Slew Rate  
0.1  
7
1.0  
30  
μA  
mV  
nA  
20  
1
100  
SR  
VIN = 1VPP, UniGain  
V/μs  
kHz  
kΩ  
GBW  
RI  
Gain-Bandwidth Product  
Input Resistance  
350  
500  
65  
GV  
Large-Signal Voltage Gain  
Input Noise Voltage  
Input Noise Current  
VO() = 10 V  
B = z  
75  
10  
dB  
eN  
μV  
IN  
B = 20 kz  
00  
75  
pA  
CMRR  
Common Mode Rejection Ratio  
60  
54  
dB  
C +15 V, VEE = -15 V  
PSRR  
VO  
Supply Voltage Rejecti
62  
23.0  
22.5  
60  
dB  
V
V
CC = +5 V, VEE = -5 V  
VCC = 24 V, VE= 0 V,  
Ip = 0.1 A  
20  
21.0  
Output VoltagSwing  
VCC = 24 V, VE= 0 V,  
Ip = 0.5 A  
V
f = 1 kHz, RL = 10 Ω,  
GV = 30 dB  
CS  
Chaparatio
dB  
%
°C  
f = 1 kHz, GV = 1 dB,  
RL = ∞  
THD  
TSD  
Total HDistortion  
0.5  
al Shutdown  
erature(3)  
160  
Note:  
3. Guaranteed by design; not 100% tested in production.  
© 2001 Fairchild Semiconductor Corporation  
L272 / L272A Rev. 1.2.0  
www.fairchildsemi.com  
4
Typical Performance Characteristics  
80  
60  
9
8
7
6
5
40  
20  
0
-20  
1.E+06  
1.01 1.E2 E+03  
1.E+04  
1.E+05  
0
4
8
12  
16  
20  
24  
28  
VCC/VEE/Supply Voltage(V)  
f, Frequency(Hz)  
Figure 2. Supply Voltage vs. Supply  
Current with No Load  
Figure 3. Open-Loop Voltage Gain  
11  
-11  
10
-12  
100  
100  
200  
300  
400  
500  
600  
700  
200  
400  
00  
600  
700  
IL, Load Current (mA)  
rrent (mA)  
25  
25  
50℃  
75℃  
0℃  
75℃  
0℃  
50℃  
100℃  
100℃  
Figure 5. Output Voltage Swing vs. Load Current  
Figure oltage Swing vs. Load Current  
60  
40  
20  
0
1.E+01  
1.E+02  
1.E+03  
5.E+03  
1.E+04  
1.E+05  
5.E+01  
5.E+02  
5.E+04  
f,Frequency(Hz)  
Figure 6. Channel Separation vs. Frequency  
© 2001 Fairchild Semiconductor Corporation  
L272 / L272A Rev. 1.2.0  
www.fairchildsemi.com  
5
Applications  
VCC  
36kΩ  
6
+
2
3
7
8
2
4
CH2  
-
+
IN  
1
5
4
CH1  
-
Tilt Coil  
10kΩ  
VEE  
3.3uF  
50V  
40kΩ  
Ω  
33Ω  
VEE  
9.1kΩ  
Figure 7. Tilt Coil, Current-ntroCircuit in Monitor  
© 2001 Fairchild Semiconductor Corporation  
L272 / L272A Rev. 1.2.0  
www.fairchildsemi.com  
6
Physical Dimensions  
MDIP 8L  
.400 10.15  
A
.373 9.46  
[ ]  
.036 [0.9 TYP]  
(.092) [Ø2.337]  
PIN #1  
(.032) [R0.813]  
.250 .005 [6.35 0.13]  
PIN #1  
B
TOP VIEW  
OPTION 1  
TOP VIEW  
OPTION 2  
.070 1.78  
.310 .07.87 0.25]  
.045  
[ ]  
1.14  
.1.005 [3.3 0.13]  
.210 M
[5]  
7° TYP  
7° TYP  
C
.015 MIN  
[0.38]  
.021 0.53  
.300  
.015 0.37  
[ ]  
40 3.55  
[7.62]  
.125 [3.17]  
.001[.025]  
C
.100  
[2.54]  
.430 MAX  
[10.92]  
.060 MAX  
[1.52]  
NOTES
JEDEC REGISTRATION MS-001,  
+.005  
+0.127  
0.254  
-0.000  
.010  
-.000  
[
]
B. CDIMENSIONS ARE IN INCHES  
REE DIMENSIONS ARE MILLIMETERS  
DOES T INCLUDE MOLD FLASH OR PROTRUSIONS.  
OLD FLASH OR PROTRUSIONS SHALL NOT EXCEED  
10 INCHES OR 0.25MM.  
OES NOT INCLUDE DAMBAR PROTUSIONS.  
AMBAR PROTRUSIONS SHALL NOT EXCEED  
.010 INCHES OR 0.25MM.  
E. DIMENSIONING AND TOLERANCING  
PER ASME Y14.5M-1994.  
N08EREVG  
Figure 8. 8-LEAD, MDIP, JEDEC MS-001, .300-INCH WIDE  
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner  
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or  
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the  
warranty therein, which covers Fairchild products.  
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:  
http://www.fairchildsemi.com/dwg/N0/N08E.pdf.  
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:  
http://www.fairchildsemi.com/packing_dwg/PKG-N08E.pdf.  
© 2001 Fairchild Semiconductor Corporation  
L272 / L272A Rev. 1.2.0  
www.fairchildsemi.com  
7
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®
®*  
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GmaxA  
PowerTrench®  
PowerXS™  
Programmable Active DroopA  
QFET®  
BitSiCA  
TinyBoost®  
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CTLA  
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GTOA  
IntelliMAXA  
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A
Current Transfer LogicA  
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and Better™  
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XS™  
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Datasheet contains the design specifications for product development. Specifications may change  
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Preliminary  
No Identification Needed  
Obsolete  
First Production  
Full Production  
Not In Production  
Rev. I66  
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