LE24CBK222M [ONSEMI]

EEPROM,;
LE24CBK222M
型号: LE24CBK222M
厂家: ONSEMI    ONSEMI
描述:

EEPROM,

可编程只读存储器 电动程控只读存储器 电可擦编程只读存储器
文件: 总20页 (文件大小:181K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Ordering number : EN*A1811A  
CMOS IC  
Triple port EEPROM  
Two Wire Serial Interface  
(2K+2K EEPROM)  
LE24CBK222  
Overview  
The triple port EEPROM series consists of two independent banks, and each bank can be controlled separately using  
dedicated control pins. The EEPROM also features a control port, which is a third pin separate from the pins used for the  
banks, and by accessing the memory areas from this control port, the two-bank configuration (2K bits + 2K bits) can be  
used as a pseudo-one-bank configuration (4K bits). Together with the 16-byte page write function, this enables a  
reduction in the number of factory write processes.  
Furthermore, the EEPROM has a configuration area which is separate from the 2K-bit + 2K-bit area, and by using the  
settings stored in this configuration area, it is possible to change the slave address for each port and to set read/write  
protection for each port.  
This product incorporates SANYO's high performance CMOS EEPROM technology and realizes high-speed operation  
and high-level reliability. The interface of this product is compatible with the I2C bus protocol, making it ideal as a  
nonvolatile memory for small-scale parameter storage.  
In addition, this product also supports DDC2TM, so it can also be used as an EDID data storage memory for display  
equipment.  
Functions  
Capacity  
: Bank1:2K bits (256 × 8 bits) + Bank2:2K bits (256 × 8 bits)  
+ configuration area: 128 bits (16 × 8 bits), 4224 bits in total  
: 2.5V to 5.5V  
Single supply voltage  
Interface  
: Two wire serial interface (I2C Bus*), VESA DDC2TM compliant** 3-port access  
Operating clock frequency : 400kHz (max)  
Low power consumption : Standby: 5μA (max)  
: One-bank read: 0.5 mA (max.), Two-bank simultaneous read: 1.0 mA (max.)  
Continued on next page.  
* : I2C Bus is a trademark of Philips Corporation.  
**: DDC and EDID are trademarks of Video Electronics Standard Association (VESA).  
* This product is licensed from Silicon Storage Technology, Inc. (USA), and manufactured and sold by  
SANYO Semiconductor Co., Ltd.  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,  
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be  
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace  
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety  
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case  
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee  
thereof. If you should intend to use our products for applications outside the standard applications of our  
customer who is considering such use and/or outside the scope of our intended standard applications, please  
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our  
customer shall be solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are not  
guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent  
device, the customer should always evaluate and test devices mounted in the customer  
's products or  
equipment.  
10511 SY/92910 SY No.1811-1/20  
LE24CBK222  
Continued from preceding page.  
Automatic page write mode: 16 bytes  
Slave address setting  
Protect function  
Read mode  
Erase/Write cycles  
Data Retention  
High reliability  
: Slave address can be set for each port.  
: Read/write protection can be set for each port.  
: Sequential read and random read  
: 106 cycles  
: 20 years  
: Adopts SANYO’s proprietary symmetric memory array configuration (USP6947325)  
Noise filters connected to SCL1, SDA1, SCL2, SDA2, SCLC and SDAC pins  
Incorporates a feature to prohibit write operations under low voltage conditions.  
Package  
: LE24CBK222M  
MFP8 (225mil)  
: LE24CBK222TT MSOP8 (150mil)  
Package Dimensions  
unit:mm (typ)  
Package Dimensions  
unit:mm (typ)  
3032E  
[LE24CBK222M]  
3245B  
[LE24CBK222TT]  
3.0  
5.0  
8
8
1
2
1
2
(0.6)  
1.27  
0.15  
0.35  
(0.53)  
0.65  
0.25  
0.125  
SANYO : MFP8(225mil)  
SANYO : MSOP8(150mil)  
Pin Assignment  
Pin Descriptions  
PIN.1  
PIN.2  
PIN.3  
PIN.4  
PIN.5  
PIN.6  
PIN.7  
PIN.8  
SCL1  
SDA1  
SDA2  
GND  
Clock input  
Port 1  
Port 2  
Data input/output  
Data input/output  
Ground  
V
1
2
3
4
8
7
6
5
SCL1  
SDA1  
SDA2  
GND  
DD  
SCL2  
SCLC  
SDAC  
SDAC  
SCLC  
SCL2  
Data input/output  
Clock input  
Control port  
Port 2  
Clock input  
V
Power supply  
DD  
No.1811-2/20  
LE24CBK222  
Block Diagram  
Low V  
CC  
Detect  
V
DD  
State  
Control  
Port 1  
SDA1  
Bank1  
(2k EEPROM)  
Port  
Control  
Control Port  
SDAC  
SCL1  
Port  
Control  
Port 2  
SDA2  
SCLC  
Port  
Control  
Bank2  
(2k EEPROM)  
SCL2  
Configuration Area  
Protect info.  
Slave Address  
Slave Enable  
Description of Operation  
Access to Bank1 is performed through port 1 (SCL1 / SDA1), and access to Bank2 through port 2 (SCL2 / SDA2).  
When read operations are performed, Bank1 and Bank2 can be controlled independently of each other and both banks  
can be accessed at the same time. When write operations are performed, it is not possible to access both banks while a  
write operation is in progress in one of the banks (including the write wait time).  
Both Bank1 and Bank2 can be accessed from the control port (SCLC, SDAC). The two-bank configuration (2K bits +  
2K bits) can be used as a pseudo-one-bank configuration (4K bits). Data correlation is guaranteed between the mode in  
which accesses are made from port1 or port 2 and the mode in which accesses are made from the control port, enabling  
operations such as writing data from control port in a lump and reading data from port 1 or port 2.  
Access to the configuration area where the slave addresses of the ports and protect information is stored is made from  
the control port.  
Specifications  
Absolute Maximum Ratings  
Parameter  
Supply voltage  
Symbol  
Conditions  
Ratings  
-0.5 to +6.5  
Unit  
V
DC input voltage  
-0.5 to +5.5  
-1.0 to +6.5  
-65 to +150  
V
Over-shoot voltage  
Storage temperature  
Below 20ns  
V
Tstg  
°C  
Note: If an electrical stress exceeding the maximum rating is applied, the device may be damaged.  
Operating Conditions  
Parameter  
Operating supply voltage  
Operating temperature  
Symbol  
Conditions  
Ratings  
Unit  
V
2.5 to 5.5  
-40 to +85  
°C  
No.1811-3/20  
LE24CBK222  
DC Electrical Characteristics  
V
=2.5V to 5.5V  
typ  
DD  
Parameter  
Symbol  
11  
Conditions  
Unit  
mA  
min  
max  
Supply current at reading  
I
I
f=400kHz  
0.5  
CC  
(when either Bank1 or Bank2 is read)  
Supply current at reading  
12  
f=400kHz  
1.0  
mA  
CC  
(when both Bank1 and Bank2 are read  
simultaneously)  
I
I
I
I
2
f=400kHz, t  
=5ms  
5
5
mA  
μA  
μA  
μA  
V
Supply current at writing  
Standby current  
CC  
SB  
LI  
WC  
V
V
V
=V  
or GND  
0.7  
IN DD  
=GND to V  
-2.0  
+2.0  
+2.0  
*0.3  
Input leakage current  
Output leakage current (SDA)  
Input low voltage  
IN  
DD  
=GND to V  
DD  
-2.0  
LO  
OUT  
V
V
V
V
DD  
IL  
V
*0.7  
V
Input high voltage  
IH  
DD  
I
=0.7mA, V =2.5V  
OL DD  
0.2  
0.4  
0.4  
0.6  
V
OL  
I
I
I
=3.0mA, V =2.5V  
DD  
V
OL  
OL  
OL  
Output low level voltage  
=3.0mA, V =5.5V  
DD  
V
=6.0mA, V =4.5V  
DD  
V
Capacitance/Ta=25°C, f=100kHz  
Parameter  
Symbol  
Conditions  
min  
typ  
2
max  
Unit  
pF  
In/Output capacitance  
Input capacitance  
C
V
=0V (SDA1, SDA2, SDAC)  
I/O  
5
5
I/O  
C
V
=0V (SCL1, SCL2, SCLC)  
IN  
2
pF  
I
Note: This parameter is sampled and not 100% tested.  
AC Electric Characteristics  
Fast Mode  
V
=2.5V to 5.5V  
typ  
DD  
Parameter  
Symbol  
unit  
min  
max  
Slave mode SCL clock frequency  
SCL clock low time  
f
t
t
t
t
t
t
t
t
t
t
t
t
t
t
400  
900  
kHz  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ms  
SCLS  
LOW  
HIGH  
AA  
1200  
600  
100  
100  
600  
600  
100  
0
SCL clock high time  
SDA output delay time  
SDA data output hold time  
Start condition setup time  
Start condition hold time  
Data in setup time  
DH  
SU.STA  
HD.STA  
SU.DAT  
HD.DAT  
SU.STO  
R
Data in hold time  
Stop condition setup time  
SCL, SDA rise time  
600  
300  
300  
SCL, SDA fall time  
F
Bus release time  
1200  
BUF  
Noise suppression time  
Write cycle time  
100  
5
SP  
WC  
No.1811-4/20  
LE24CBK222  
Standard Mode  
V
=2.5V to 5.5V  
typ  
DD  
Parameter  
Symbol  
unit  
min  
max  
Slave mode SCL clock frequency  
SCL clock low time  
f
t
t
t
t
t
t
t
t
t
t
t
t
t
t
100  
kHz  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ms  
SCLS  
LOW  
HIGH  
AA  
4700  
4000  
100  
SCL clock high time  
SDA output delay time  
SDA data output hold time  
Start condition setup time  
Start condition hold time  
Data in setup time  
3500  
100  
DH  
4700  
4000  
250  
SU.STA  
HD.STA  
SU.DAT  
HD.DAT  
SU.STO  
R
Data in hold time  
0
Stop condition setup time  
SCL, SDA rise time  
4000  
1000  
300  
SCL, SDA fall time  
F
Bus release time  
4700  
BUF  
Noise suppression time  
Write cycle time  
100  
5
SP  
WC  
Bus Timing  
t
F
t
t
HIGH  
LOW  
t
R
SCL  
t
SP  
t
t
t
SU.STA  
t
HD.STA  
HD.DAT  
t
HD.STA  
SU.STO  
t
SDA/IN  
SDA/OUT  
SP  
t
BUF  
t
t
DH  
AA  
Write Timing  
t
WC  
SCL  
SDA  
D0  
Write data  
Start  
condition  
Stop  
condition  
Acknowledge  
No.1811-5/20  
LE24CBK222  
Pin Functions  
(Port1: For Bank1)  
SCL1 (serial clock input) pin  
The SCL1 pin is the serial clock input pin used to access the Bank1 area, and processes signals at the rising and falling  
edges of the SCL1 clock signal.  
This pin must be pulled up by a resistor to the V  
output device for use.  
level, and wired-ORed with another open drain (or open collector)  
DD  
While this product is being accessed from the control port, it cannot be accessed from port 1.  
SDA1 (serial data input/output) pin  
The SDA1 pin is used to transfer serial data to the input/output of the Bank1 side area and it consists of a signal input  
pin and n-channel transistor open drain output pin.  
Like the SCL1 line, the SDA1 line must be pulled up by a resistor to the V  
open drain (or open collector) output device for use.  
level and wired-ORed with another  
DD  
While this product is being accessed from the control port, it cannot be accessed from port 1.  
(Port2: For Bank2)  
SCL2 (serial clock input) pin  
The SCL2 pin is the serial clock input pin used to access the Bank2 area, and processes signals at the rising and falling  
edges of the SCL2 clock signal.  
This pin must be pulled up by a resistor to the V  
output device for use.  
level, and wired-ORed with another open drain (or open collector)  
DD  
While this product is being accessed from the control port, it cannot be accessed from port 2.  
SDA2 (serial data input/output) pin  
The SDA2 pin is used to transfer serial data to the input/output of the Bank2 side area and it consists of a signal input  
pin and n-channel transistor open drain output pin.  
Like the SCL2 line, the SDA2 line must be pulled up by a resistor to the V  
open drain (or open collector) output device for use.  
level and wired-ORed with another  
DD  
While this product is being accessed from the control port, it cannot be accessed from port 2.  
(Control port: For accessing both banks and for accessing the configuration area)  
SCLC (serial clock input) pin  
The SCLC pin is the serial clock input pin used for accessing both the Bank1 and Bank2 areas and the configuration  
area. The signals are processed at the rising and falling edges of the SCLC clock signal.  
The pin must be pulled up by a resistor to the VDD level, and it is wired-ORed with another open drain (or open  
collector) output device for use.  
SDAC (serial data input/output) pin  
The SDAC pin is used to transfer serial data to the input/output of both Bank1 and Bank2 areas and the configuration  
area, and it consists of a signal input pin and n-channel transistor open drain output pin.  
Like the SCLC line, the SDAC line must be pulled up by a resistor to the VDD level, and it is wired-ORed with another  
open drain (or open collector) output device for use.  
No.1811-6/20  
LE24CBK222  
Functional Description  
1. Start condition  
When the SCL line is at the high level, the start condition is established by changing the SDA line from high to low.  
The operation of the EEPROM as a slave starts in the start condition.  
2. Stop condition  
When the SCL line is at the high level, the stop condition is established by changing the SDA line from low to high.  
When the device is set up for the read sequence, the read operation is suspended when the stop condition is received,  
and the device is set to standby mode. When it is set up for the write sequence, the capture of the write data is ended  
when the stop condition is received, and the EEPROM internal write operation is started.  
t
t
HD.STA  
SU.STA  
t
SU.STO  
SCL  
SDA  
Stop  
condition  
Start  
condition  
3. Data transfer  
Data is transferred by changing the SDA line while the SCL line is low. When the SDA line is changed while the SCL  
line is high, the resulting condition will be recognized as the start or stop condition.  
t
t
HD.DAT  
SU.DAT  
SCL  
SDA  
4. Acknowledge  
During data transfer, 8 bits are transferred in succession, and then in the ninth clock cycle period the device on the  
system bus receiving the data sets the SDA line to low, and sends the acknowledge signal indicating that the data has  
been received. The acknowledge signal is not sent during an EEPROM internal write operation.  
SCL  
(EEPROM input)  
8
9
1
SDA  
(Master output)  
Acknowledge  
bit output  
SDA  
(EEPROM output)  
Start  
condition  
t
t
DH  
AA  
No.1811-7/20  
LE24CBK222  
5. Device addressing  
For the purposes of communication, the master device in the system generates the start condition for the slave device.  
Communication with a particular slave device is enabled by sending along the SDA bus the device address, which is 7  
bits long, and the read/write command code, which is 1 bit long, immediately following the start condition.  
The upper four bits of the device address are called the device code which, for this product, are fixed at “1010b.”  
The 3-bit slave address (SA2, SA1, and SA0 for access from port 1; SB2, SB1, and SB0 for access from port 2; SC2  
and SC1for access from the control port) following the device code are stored in the configuration area, and any  
values can be set for these addresses. However, the device address to be used to access the configuration area is fixed  
at “1011_100b” and cannot be changed.  
When the device code input from SDA and the slave addresses are compared with the product’s device code and  
configuration area that were set at the mounting stage and found to match, the product sends the acknowledge signal  
during the ninth clock cycle period, and initiates the read or write operation in accordance with the read or write  
command code. If they do not match, the EEPROM returns to standby mode. When a read operation is performed  
immediately after the slave device has been switched, the random read command must be used.  
Slave  
Address  
Device code  
1
1
SA1  
0
0
0
0
0
SA2  
SA0  
SB0  
A8*  
Port 1  
Port 2  
R/W  
LSB  
MSB  
Device Address word  
1
1
1
1
SB1  
0
0
1
SB2  
SC2  
1
R/W  
LSB  
MSB  
Control Port  
(When you access  
Bank1, Bank2)  
1
SC1  
R/W  
LSB  
MSB  
*A8=0:Bank1 access  
A8=1:Bank2 access  
Control Port  
(When you access  
configuration area)  
1
0
0
R/W  
MSB  
LSB  
The slave addresses are set as follows when this product is shipped.  
(SA2, SA1, SA0) = (0, 0, 0)  
(SB2, SB1, SB0) = (0, 0, 0)  
(SC2, SC1) = (0, 0)  
No.1811-8/20  
LE24CBK222  
6 Internal mode  
This product functions in bank mode when it is accessed from port 1 or port 2 and in combined mode when it is  
accessed from the control port.  
6-1. Bank mode  
The EEPOM functions in the bank mode when it is accessed from port 1 or port 2. In the bank mode, Bank1 is  
controlled from the port 1 pins (SCL1, SDA1), and Bank2 is controlled from the port 2 pins (SCL2, SDA2).  
When read operations are performed, the two banks can be controlled independently of each other, and access to  
different addresses can be made at the same time. This enables the EEPROM to be handled as two independent  
EEPROM devices incorporated in a single package. In turn, this makes it possible for the Bank1 and Bank2 sides to  
be connected to the MCU of separate systems.  
When write operations are performed, it is not possible to write data in two banks at the same time. After the write  
data has been input into one of the banks and the internal rewriting operation has started, access to the two banks is  
not possible during the write time tWC period.  
LE24CBK222  
00h  
SCL1  
SDA1  
Bank1  
(2k-bit)  
FFh  
00h  
SCL2  
SDA2  
Bank2  
(2k-bit)  
FFh  
6-2. Combine mode  
The EEPROM functions in the combined mode when it is accessed from the control port. In the combined mode,  
Bank1 and Bank2 are controlled from the control port pins (SCLC, SDAC). The combined mode uses the two-bank  
configuration (2K bits + 2K bits) as a pseudo-one-bank configuration (4K bits). Since the memory area is processed  
as a single 4K-bit bank in this mode, the MSB address changes from A7 to A8. Input A8=0 to control the Bank1 area,  
and input A8=1 to control the Bank2 area.  
When, in the combined mode, the last address (0FFh) of Bank1 has been reached in a sequential read operation, the  
address (100h) in the Bank2 side is sequentially read. Similarly, when the last address (1FFh) of Bank2 has been  
reached, it is rolled over to the Bank1 address (000h) and continues to be read into this address.  
Data correlation is guaranteed between the bank mode and combined mode, enabling operations while switching the  
mode such as performing write in the combined mode and read in the bank mode.  
While the EEPROM is functioning in the combined mode, access from port 1 and port 2 is disabled. In the bank  
mode, the read operation stops while data is being read from the ports. And, in the bank mode, while the data of one  
of the banks is being written, access from the control port is disabled until the internal write operation is completed.  
LE24CBK222  
000h  
SCLC  
SDAC  
Bank1  
(2k-bit)  
0FFh  
100h  
Bank2  
SCL1  
SDA1  
SCL2  
SDA2  
(2k-bit)  
1FFh  
No.1811-9/20  
LE24CBK222  
Fig.: configuration area memory map  
address  
0h  
1h  
Bit7  
×
×
Bit6  
×
×
Bit5  
×
×
Bit4  
Bit3  
×
×
Bit2  
SC2  
SA2  
SB2  
Bit1  
SC1  
SA1  
SB1  
Bit0  
×
SA0  
Slv_ENBC  
Slv_ENB1  
Slv_ENB2  
2h  
×
×
×
×
SB0  
3h  
Reserved R/W  
4h  
5h  
6h  
7h  
Reserved R/W  
Reserved R/W  
Reserved R/W  
Reserved R/W  
8h  
9h  
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
PB1C  
PB1A  
PB1B  
PB0C  
PB0A  
PB0B  
Ah  
Bh  
Ch  
Dh  
Eh  
Fh  
Reserved R/W  
Reserved R/W  
Reserved R/W  
Reserved R/W  
Device Revision (Reserved R only)  
7. Configuration area  
This product has a configuration area equivalent to 16 addresses that is separate from Bank1 and Bank2. Refer to the  
above table for the memory map of the configuration area. Access to the configuration area is performed by inputting  
device address “1011_100b” from the control port.  
7-1. Slave address bits (SA2, SA1, SA0, SB2, SB1, SB0, SC2, SC1)  
The slave address bits are used to set the slave address in the device address. This product does not have slave  
address pins, but has slave address bits inside instead. By changing the values of these bits, it is possible to change  
the slave addresses at any time. Each port contains a slave address bit, and a different slave address can be assigned  
to the ports.  
Port  
Port 1  
Slave address bit  
SA2, SA1, SA0  
SB2, SB1, SB0  
SC2, SC1  
Port 2  
Control Port  
7-2. Slave address enable bits (Slv_ENB1, Slv_ENB2, Slv_ENBC)  
The slave address enable bits (Slv_ENB) are used to enable or disable the slave addresses of the ports, which have  
been set in the configuration area. When Slv_ENB=”0,” the slave address bits of the ports which have been set in the  
configuration area are disabled, and the slave address value input in the device address is don’t care. When another  
slave device exists on the same bus as the EEPROM, Slv_ENB=”1” must be set without fail.  
Port  
Port 1  
Slave address enable bit  
Slv_ENB1  
Port 2  
Slv_ENB2  
Control Port  
Slv_ENBC  
7-3. Protect bits (PB1A, PB0A, PB1B, PB0B, PB1C, PB0C)  
The protect bits are used to set the access level. The value of the protect bits determine whether the product is to be  
protected against read and write operations. The protect bits can be set for each port.  
PB1n  
PB0n  
access level  
access inhibit  
0
0
1
1
0
1
0
1
Read write prohibition. Only the acknowledge response.  
Write prohibition. Only the read.  
Read write possible.  
7-4. Reserved R/W  
The bits in addresses 3h to 7h and Bh to Eh in the configuration area are reserved bits, and have no significance.  
Read and write are possible in the areas with these addresses, but it is recommended that the areas not be used.  
7-5. Device revision  
The revision code of this product is stored in the Fh address of the configuration area. It is read-only and cannot be  
rewritten with a write operation.  
No.1811-10/20  
LE24CBK222  
8 EEPROM write operation  
8-1. Byte writing  
When the EEPROM receives the 7-bit device address and write command code “0” after the start condition, it  
generates an acknowledge signal. After this, if it receives the 8-bit word address, generates an acknowledge signal,  
receives the 8-bit write data, generates an acknowledge signal and then receives the stop condition, the internal write  
operation of the EEPROM in the designated memory address will start. Rewriting is completed in the t  
period  
WC  
after the stop condition. During an EEPROM internal write operation, no input is accepted and no acknowledge  
signals are generated.  
Device Address  
Word Address  
Data  
S0  
/
A8  
1
0
1
0
S2  
S1  
W
SDA  
A3 A2  
D2  
A7  
A5 A4  
A1 A0  
D7 D6 D5 D4 D3  
ACK  
D1  
D0  
A6  
ACK  
R/W  
ACK  
S2, S1, S0 : Slave Address  
A8 : Bank selecting address used during control port access  
Access from master  
8-2. Page writing  
This product enables pages with up to 16 bytes to be written. The basic data transfer procedure is the same as for byte  
writing: Following the start condition, the 7-bit device address and write command code “0,” word address (n), and  
data (n) are input in this order while confirming acknowledge “0” every 9 bits. The page write mode is established if,  
after data (n) is input, the write data (n+1) is input without inputting the stop condition. After this, the write data  
equivalent to the largest page size can be received by a continuous process of repeating the receiving of the 8-bit  
write data and generating the acknowledge signals.  
At the point when the write data (n+1) has been input, the lower 4 bits (A0-A3) of the word addresses are  
automatically incremented to form the (n+1) address. In this way, the write data can be successively input, and the  
word address on the page is incremented each time the write data is input. If the write data exceeds 16 bytes or the  
last address of the page is exceeded, the word address on the page is rolled over. Write data will be input into the  
same address two or more times, but in such cases the write data that was input last will take effect. Finally, the  
EEPROM internal write operation corresponding to the page size for which the write data is received starts from the  
designated memory address when the stop condition is received.  
Device Address  
Word Address  
Data(n)  
Data(n+1)  
S0  
/
A8  
1
0
1
0
S2  
W
D1 D0  
SDA  
S1  
A3 A2  
D2  
D0  
D1  
D7  
D6  
A7  
A5 A4  
A1 A0  
D7 D6 D5 D4 D3  
ACK  
A6  
ACK  
R/W  
ACK  
ACK  
Data(n+x)  
D7 D6  
D1 D0  
D7 D6  
D1 D0  
D7 D6  
D1 D0  
D7 D6  
D1 D0  
ACK  
ACK  
ACK  
Access from master  
S2, S1, S0 : Slave Address  
A8 : Bank selecting address used during control port access  
No.1811-11/20  
LE24CBK222  
8-3. Acknowledge polling  
Acknowledge polling is used to find out when the EEPROM internal write operation is completed. When the stop  
condition is received and the EEPROM starts rewriting, all operations are prohibited, and no response can be given to  
the signals sent by the master device. Therefore, in order to find out when the EEPROM internal write operation is  
completed, the start condition, device address and write command code are sent from the master device to the  
EEPROM (slave device), and the response of the slave device is detected.  
In other words, if the slave device does not send the acknowledge signal, it means that the internal write operation is  
in progress; conversely, if it does send the acknowledge signal, it means that the internal write operation has been  
completed.  
During Write  
During Write  
S0  
End of Write  
S0  
S0  
1
0
1
1
0
1
1
0
1
0
S2  
W
0
S2  
W
0
S2  
W
SDA  
S1  
/
S1  
/
S1  
/
A8  
A8  
A8  
NO ACK  
R/W  
ACK  
R/W  
NO ACK  
R/W  
S2, S1, S0 : Slave Address  
A8 : Bank selecting address used during control port access  
Access from master  
No.1811-12/20  
LE24CBK222  
9 EEPROM read operations  
9-1. Current address reading  
The address equivalent to the memory address accessed last +1 is held as the internal address of the EEPROM for  
both write* and read operations. Therefore, provided that the master device has recognized the position of the  
EEPROM address pointer, data can be read from the memory address with the current address pointer without  
specifying the word address.  
As with writing, current address reading involves receiving the 7-bit device address and read command code “1”  
following the start condition, at which time the EEPROM generates an acknowledge signal. After this, the 8-bit data  
of the (n+1) address is output serially starting with the highest bits. After the 8 bits have been output, by not sending  
an acknowledge signal and inputting the stop condition, the EEPROM completes the read operation and is set to  
standby mode.  
If the previous read address is the last address, the address for the current address reading is rolled over to become  
address 0.  
* The current address assigned after a page write is the number of bytes written at the designated word address  
plus 1 if the volume of the write data is greater than 1 byte or less than or equal to 16 bytes, and is the designated  
word address if the volume of the write data is 16 bytes or more. If the last address of the page (A3 to A0 =  
1111b) is specified as the word address for a byte write, the internal address after the write becomes the first  
address in that page (A3 to A0 = 0000b).  
Device Address  
Data(Current Address)  
S0  
/
A8  
1
0
1
0
S2  
R
SDA  
S1  
D2  
D7 D6 D5 D4 D3  
ACK  
D1  
D0  
NO ACK  
R/W  
S2, S1, S0 : Slave Address  
A8 : Bank selecting address used during control port access  
Access from master  
9-2. Random read  
Random read is a mode in which any memory address is specified and its data read. The address is specified by a  
dummy write input.  
First, when the EEPROM receives the 7-bit device address and write command code “0” following the start condition,  
it generates an acknowledge signal. It then receives the 8-bit word address, and generates an acknowledge signal.  
Through these operations, the word address is loaded into the address counter inside the EEPROM.  
Next, the start condition is input again and the current read is initiated. This causes the data of the word address that  
was input using the dummy write input to be output. If, after the data is output, an acknowledge signal is not sent and  
the stop condition is input, reading is completed, and the EEPROM returns to standby mode.  
Device Address  
Word Address  
Device Address  
Data(n)  
S0  
/
A8  
S0  
/
A8  
1
0
1
1
0
1
D0  
0
S2  
W
0
S2  
D7  
SDA  
S1  
A3 A2  
A5 A4  
A1 A0  
A7  
S1  
R
A6  
ACK  
R/W  
Dummy Write  
ACK  
NO ACK  
ACK  
R/W  
Current Address Read  
S2, S1, S0 : Slave Address  
A8 : Bank selecting address used during control port access  
Access from master  
No.1811-13/20  
LE24CBK222  
9-3. Sequential read  
In this mode, the data is read continuously, and sequential read operations can be performed with both current address  
read and random read. If, after the 8-bit data has been output, acknowledge “0” is input and reading is continued  
without issuing the stop condition, the address is incremented, and the data of the next address is output.  
If acknowledge “0” continues to be input after the data has been output in this way, the data is successively output  
while the address is incremented. When the last address is reached, it is rolled over to address 0, and the data  
continues to be read. As with current address read and random read, the operation is completed by inputting the stop  
condition without sending an acknowledge signal.  
*: For accesses from port 1 or port 2, the last address is FFh and for accesses to Bank1 or Bank2 from the control port,  
it is 1FFh. And, for accesses to the configuration area, the last address is Fh.  
Device Address  
Data(n)  
Data(n+x)  
Data(n+1)  
S0  
/
A8  
1
0
1
R
D7  
D1 D0  
D7  
D1 D0  
D7  
D6  
D1 D0  
0
S2  
D6  
D6  
SDA  
S1  
ACK  
R/W  
ACK  
ACK  
NO ACK  
Access from master  
S2, S1, S0 : Slave Address  
A8 : Bank selecting address used during control port access  
10. Operations during protect  
The access level can be set for each port by using the values of the protect bits stored in the configuration area.  
However, access to the configuration area from the control port (device address 1011_100b) is always enabled  
regardless of the access level of the control port.  
10-1. Access disabled state (PB1n=0, PB0n=0)  
When the protect bits in the configuration area are set to”00b,” all the operations from the corresponding port are  
protected, and the access from the port is disabled. When a read or write operation is input from a port in this state,  
the product does not start the operation and enters the standby state. In addition, it does not return an acknowledge  
signal.  
10-2. Read/write disabled state (PB1n=0, PB0n=1)  
When the protect bits in the configuration area are set to “01b,” the read and write operations from the corresponding  
port are protected. When a read or write operation is input from a port in this state, the product returns an  
acknowledge signal and enters the standby state without initiating a read or write operation.  
*: In read operations, the product generates an acknowledge signal on the high-to-low transition of the SCL clock in  
the 9th cycle from the start condition. It enters the standby state on the low-to-high transition of the SCL clock in the  
same cycle.  
10-3. Write prohibited state (PB1n=1, PB0n=0)  
When the protect bits in the configuration area are set to “10b,” the write operations from the corresponding port are  
protected. When a write operation is input from a port in this state, the product returns an acknowledge signal and  
enters the standby state without initiating a write operation.  
10-4. Read/write enabled state (PB1n=1, PB0n=1)  
When the protect bits in the configuration area are set to “11b,” the read operations and write operations from the  
corresponding port are enabled.  
No.1811-14/20  
LE24CBK222  
Application Notes  
1) Software reset function  
Software reset (start condition + 9 dummy clock cycles + start condition), shown in the figure below, is executed in  
order to avoid erroneous operation after power-on and to reset while the command input sequence. During the  
dummy clock input period, the SDA bus must be opened (set to high by a pull-up resistor). Since it is possible for  
the ACK output and read data to be output from the EEPROM during the dummy clock period, forcibly entering H  
will result in an overcurrent flow.  
Note that this software reset function does not work during the internal write cycle.  
Dummy clock ×9  
SCL  
1
2
8
9
SDA  
Start  
condition  
Start  
condition  
2) Pull-up resistor of SDA pin  
Due to the demands of the I2C bus protocol function, the SDA pin must be connected to a pull-up resistor (with a  
resistance from several kΩ to several tens of kΩ) without fail. The appropriate value must be selected for this  
resistance (R ) on the basis of the V and I of the microcontroller and other devices controlling this product as  
PU IL IL  
well as the V –I  
characteristics of the product. Generally, when the resistance is too high, the operating  
OL OL  
frequency will be restricted; conversely, when it is too low, the operating current consumption will increase.  
R
PU  
maximum resistance  
The maximum resistance must be set in such a way that the bus potential, which is determined by the sum total (I )  
L
of the input leaks of the devices connected to the SDA bus and by R , can completely satisfy the input high level  
PU  
(V min) of the microcontroller and EEPROM. However, a resistance value that satisfies SDA rise time t and fall  
IH  
R
time t must be set.  
F
R
PU  
maximum value = (V  
- V )/I  
IH L  
DD  
Example: When V =3.0V and I = 2μA  
DD  
L
R
PU  
maximum value = (3.0V 3.0V × 0.8)/2μA = 300kΩ  
R
PU  
R
PU  
minimum value  
SDA  
C
A resistance corresponding to the low-level output  
voltage (V max) of SANYO’s EEPROM must be set.  
EEPROM  
Master  
Device  
OL  
BUS  
I
L
I
L
R
PU  
minimum value = (V  
V )/I  
DD OL OL  
Example: When V =3.0V, V  
DD  
PU  
= 0.4V and I = 1mA  
OL  
OL  
minimum value = (3.0V 0.4)/1mA = 2.6kΩ  
R
Recommended R  
setting  
is set to strike a good balance between the operating frequency requirements and power consumption. If it is  
PU  
R
PU  
assumed that the SDA load capacitance is 50pF and the SDA output data strobe time is 500ns, R  
will be about  
PU  
R
PU  
= 500ns/50pF = 10kΩ.  
No.1811-15/20  
LE24CBK222  
3) Precautions when turning on the power  
This product contains a power-on reset circuit for preventing the inadvertent writing of data when the power is  
turned on. The following conditions must be met in order to ensure stable operation of this circuit. No data  
guarantees are given in the event of an instantaneous power failure during the internal write operation.  
V
=2.5 to 5.5V  
typ  
DD  
Item  
Symbol  
unit  
min  
max  
Power rise time  
t
t
100  
0.2  
ms  
ms  
V
RISE  
Power off time  
10  
t
OFF  
Power bottom voltage  
V
bot  
RISE  
V
DD  
0V  
t
OFF  
V
bot  
Notes:  
1) The SDA pin must be set to high and the SCL pin to low or high.  
2) Steps must be taken to ensure that the SDA and SCL pins are not placed in a high-impedance state.  
A. If it is not possible to satisfy the instruction 1 in Note above, and SDA is set to low during power rise  
After the power has stabilized, the SCL and SDA pins must be controlled as shown below, with both pins set to high.  
V
V
DD  
DD  
t
LOW  
SCL  
SDA  
SCL  
SDA  
t
t
SU.DAT  
t
SU.DAT  
DH  
B. If it is not possible to satisfy the instruction 2 in Note above  
After the power has stabilized, software reset must be executed.  
C. If it is not possible to satisfy the instructions both 1 and 2 in Note above  
After the power has stabilized, the steps in A must be executed, then software reset must be executed.  
4) Noise filter for the SCL and SDA pins  
This product contains a filter circuit for eliminating noise at the SCL and SDA pins. Pulses of 100ns or less are not  
recognized because of this function.  
5) Function to inhibit writing when supply voltage is low  
This product contains a supply voltage monitoring circuit that inhibits inadvertent writing below the guaranteed  
operating supply voltage range. The data is protected by ensuring that write operations are not started at voltages  
(typ.) of 1.3V and below.  
6) Initial values in the configuration  
The slave address values as well as the slave address enable bit and protect bit values of the ports are stored in the  
configuration area. These values are set as follows when the EEPROM is shipped:  
- Slave address values: “000b” for all ports  
- Slave address enable bits: “1b” for all ports (enabled)  
- Protect bit values: “11b” for all ports (no protection)  
When these values are to be changed, input the device address “1011_100b” from the control port, and perform the  
write operation.  
No.1811-16/20  
LE24CBK222  
7) Precautions when changing the mode  
This product enables to actively change the bank accessing mode during period in which no write operation is  
performed between the bank operation mode (access from port 1 or port 2 to Bank1 or Bank2) and the combined  
operation mode (access from the control port to both banks). However, the current address value for each mode is not  
held internally. When conducting read operations after changing the mode, random access read must be performed  
without fail.  
When switching the bank accessing mode, start the operations in the next mode after the operations in the previous  
mode have been completed (when the stop condition is input or no acknowledge “0” input for a sequential read).  
8) Writing with a ROM writer from the control port  
This product enables two-bank configuration (2K bits + 2K bits) to be used as a pseudo-one-bank configuration (4K  
bits) by accessing the memory areas from the control port (SCLC, SDAC). As a result, data can be written using a  
ROM writer with the EEPROM serving as a regular 4K-bit EEPROM. Fix the port 1 and port 2 pins to high or low.  
LE24C04x  
LE24CBK222  
(Standard 4k-bit EEPROM)  
V
V
DD  
8
7
6
5
8
7
6
5
1
2
3
4
1
2
3
4
SCL1  
SDA1  
SDA2  
GND  
S0  
DD  
SCL2  
SCLC  
SDAC  
WP  
S1  
SCL  
SDA  
S2  
GND  
ROM writer connection example  
LE24CBK222  
V
8
7
6
5
1
2
3
4
SCL1  
SDA1  
SDA2  
GND  
DD  
SCL2  
SCLC  
SDAC  
Memory Area (4K-bit)  
000h  
Bank1  
(2k-bit)  
A8=0  
The MSB address in combined mode is A8. A8 is used to select the  
Bank1 or Bank2 area. Set A8 = 0 to control the Bank1 area, or A8 = 1  
to control the Bank2 area.  
0FFh  
100h  
Bank2  
(2k-bit)  
A8=1  
1FFh  
No.1811-17/20  
LE24CBK222  
10) System Configuration Image  
(HDMI System)  
This product can support two HDMI ports simultaneously. Both ports can be accessed at the same time when  
performing read operations of the ports. All the data can be written together from a image processor into the areas  
allocated to the two ports from the control port in a single operation.  
DDC  
Port 1  
LE24CBK222  
I2C  
Port 2  
Control Port  
Image  
Processor  
HDMI Switch  
Level Shifter  
TMDS  
HDMI  
Receiver  
DDC  
Level Shifter  
TMDS  
LCD-TV  
No.1811-18/20  
LE24CBK222  
10) Peripheral Circuit Diagram  
Example of connection with HDMI receiver  
V
(3V)*1  
DD  
*2  
*2  
*4 R  
PU  
DDC+5V  
DDC_CLK  
HDMI  
8:V  
DD  
Connector  
DDC_DAT  
LE24CBK222  
GND  
1:SCL1  
V
(3V)  
DD  
2:SDA1  
*2  
6:SCLC  
5:SDAC  
Controller  
*4 R  
PU  
DDC+5V  
DDC_CLK  
HDMI  
7:SCL2  
3:SDA2  
Connector  
DDC_DAT  
GND  
4:GND  
V
(3V)  
DD  
*4 R  
SCL1  
SDA1  
PU  
HDMI  
Recever  
HDMI  
Switch  
SCL2  
SDA2  
SCL(3V)  
SDA(3V)  
*3  
(Level Shifter)  
*1: System power supply (3V) for HDMI receiver, etc.  
*2: Reverse-current preventing diode  
This device can be operated by supplying power from any of the connected HDMI connectors (DDC + 5V) or the  
system power supply (3V). However, the supply voltage must be set so that the voltage stepped-down by the  
reverse-current preventing diode is within the guaranteed operation voltage range of this device.  
*3: Level shifter  
When connecting the 5V HDMI connector side with a 3V system, level shifters must generally be inserted. However,  
this is not necessary when the HDMI receiver supports 5V input signals.  
*4: Pull-up resistors for the I2C and DDC interfaces.  
See item 2) in the Application Notes for the resistance value settings.  
No.1811-19/20  
LE24CBK222  
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using  
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition  
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.  
products described or contained herein.  
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all  
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or  
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise  
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt  
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not  
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural  
design.  
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are  
controlled under any of applicable local export control laws and regulations, such products may require the  
export license from the authorities concerned in accordance with the above law.  
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or  
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,  
without the prior written consent of SANYO Semiconductor Co.,Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the  
SANYO Semiconductor Co.,Ltd. product that you intend to use.  
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed  
for volume production.  
Upon using the technical information or products described herein, neither warranty nor license shall be granted  
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third  
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's  
intellectual property rights which has resulted from the use of the technical information and products mentioned  
above.  
This catalog provides information as of January, 2011. Specifications and information herein are subject  
to change without notice.  
PS No.1811-20/20  

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