LE24CBK222M [ONSEMI]
EEPROM,;型号: | LE24CBK222M |
厂家: | ONSEMI |
描述: | EEPROM, 可编程只读存储器 电动程控只读存储器 电可擦编程只读存储器 |
文件: | 总20页 (文件大小:181K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Ordering number : EN*A1811A
CMOS IC
Triple port EEPROM
Two Wire Serial Interface
(2K+2K EEPROM)
LE24CBK222
Overview
The triple port EEPROM series consists of two independent banks, and each bank can be controlled separately using
dedicated control pins. The EEPROM also features a control port, which is a third pin separate from the pins used for the
banks, and by accessing the memory areas from this control port, the two-bank configuration (2K bits + 2K bits) can be
used as a pseudo-one-bank configuration (4K bits). Together with the 16-byte page write function, this enables a
reduction in the number of factory write processes.
Furthermore, the EEPROM has a configuration area which is separate from the 2K-bit + 2K-bit area, and by using the
settings stored in this configuration area, it is possible to change the slave address for each port and to set read/write
protection for each port.
This product incorporates SANYO's high performance CMOS EEPROM technology and realizes high-speed operation
and high-level reliability. The interface of this product is compatible with the I2C bus protocol, making it ideal as a
nonvolatile memory for small-scale parameter storage.
In addition, this product also supports DDC2TM, so it can also be used as an EDID data storage memory for display
equipment.
Functions
• Capacity
: Bank1:2K bits (256 × 8 bits) + Bank2:2K bits (256 × 8 bits)
+ configuration area: 128 bits (16 × 8 bits), 4224 bits in total
: 2.5V to 5.5V
• Single supply voltage
• Interface
: Two wire serial interface (I2C Bus*), VESA DDC2TM compliant** 3-port access
• Operating clock frequency : 400kHz (max)
• Low power consumption : Standby: 5μA (max)
: One-bank read: 0.5 mA (max.), Two-bank simultaneous read: 1.0 mA (max.)
Continued on next page.
* : I2C Bus is a trademark of Philips Corporation.
**: DDC and EDID are trademarks of Video Electronics Standard Association (VESA).
* This product is licensed from Silicon Storage Technology, Inc. (USA), and manufactured and sold by
SANYO Semiconductor Co., Ltd.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
's products or
equipment.
10511 SY/92910 SY No.1811-1/20
LE24CBK222
Continued from preceding page.
• Automatic page write mode: 16 bytes
• Slave address setting
• Protect function
• Read mode
• Erase/Write cycles
• Data Retention
• High reliability
: Slave address can be set for each port.
: Read/write protection can be set for each port.
: Sequential read and random read
: 106 cycles
: 20 years
: Adopts SANYO’s proprietary symmetric memory array configuration (USP6947325)
Noise filters connected to SCL1, SDA1, SCL2, SDA2, SCLC and SDAC pins
Incorporates a feature to prohibit write operations under low voltage conditions.
• Package
: LE24CBK222M
MFP8 (225mil)
: LE24CBK222TT MSOP8 (150mil)
Package Dimensions
unit:mm (typ)
Package Dimensions
unit:mm (typ)
3032E
[LE24CBK222M]
3245B
[LE24CBK222TT]
3.0
5.0
8
8
1
2
1
2
(0.6)
1.27
0.15
0.35
(0.53)
0.65
0.25
0.125
SANYO : MFP8(225mil)
SANYO : MSOP8(150mil)
Pin Assignment
Pin Descriptions
PIN.1
PIN.2
PIN.3
PIN.4
PIN.5
PIN.6
PIN.7
PIN.8
SCL1
SDA1
SDA2
GND
Clock input
Port 1
Port 2
Data input/output
Data input/output
Ground
V
1
2
3
4
8
7
6
5
SCL1
SDA1
SDA2
GND
DD
SCL2
SCLC
SDAC
SDAC
SCLC
SCL2
Data input/output
Clock input
Control port
Port 2
Clock input
V
Power supply
DD
No.1811-2/20
LE24CBK222
Block Diagram
Low V
CC
Detect
V
DD
State
Control
Port 1
SDA1
Bank1
(2k EEPROM)
Port
Control
Control Port
SDAC
SCL1
Port
Control
Port 2
SDA2
SCLC
Port
Control
Bank2
(2k EEPROM)
SCL2
Configuration Area
Protect info.
Slave Address
Slave Enable
Description of Operation
Access to Bank1 is performed through port 1 (SCL1 / SDA1), and access to Bank2 through port 2 (SCL2 / SDA2).
When read operations are performed, Bank1 and Bank2 can be controlled independently of each other and both banks
can be accessed at the same time. When write operations are performed, it is not possible to access both banks while a
write operation is in progress in one of the banks (including the write wait time).
Both Bank1 and Bank2 can be accessed from the control port (SCLC, SDAC). The two-bank configuration (2K bits +
2K bits) can be used as a pseudo-one-bank configuration (4K bits). Data correlation is guaranteed between the mode in
which accesses are made from port1 or port 2 and the mode in which accesses are made from the control port, enabling
operations such as writing data from control port in a lump and reading data from port 1 or port 2.
Access to the configuration area where the slave addresses of the ports and protect information is stored is made from
the control port.
Specifications
Absolute Maximum Ratings
Parameter
Supply voltage
Symbol
Conditions
Ratings
-0.5 to +6.5
Unit
V
DC input voltage
-0.5 to +5.5
-1.0 to +6.5
-65 to +150
V
Over-shoot voltage
Storage temperature
Below 20ns
V
Tstg
°C
Note: If an electrical stress exceeding the maximum rating is applied, the device may be damaged.
Operating Conditions
Parameter
Operating supply voltage
Operating temperature
Symbol
Conditions
Ratings
Unit
V
2.5 to 5.5
-40 to +85
°C
No.1811-3/20
LE24CBK222
DC Electrical Characteristics
V
=2.5V to 5.5V
typ
DD
Parameter
Symbol
11
Conditions
Unit
mA
min
max
Supply current at reading
I
I
f=400kHz
0.5
CC
(when either Bank1 or Bank2 is read)
Supply current at reading
12
f=400kHz
1.0
mA
CC
(when both Bank1 and Bank2 are read
simultaneously)
I
I
I
I
2
f=400kHz, t
=5ms
5
5
mA
μA
μA
μA
V
Supply current at writing
Standby current
CC
SB
LI
WC
V
V
V
=V
or GND
0.7
IN DD
=GND to V
-2.0
+2.0
+2.0
*0.3
Input leakage current
Output leakage current (SDA)
Input low voltage
IN
DD
=GND to V
DD
-2.0
LO
OUT
V
V
V
V
DD
IL
V
*0.7
V
Input high voltage
IH
DD
I
=0.7mA, V =2.5V
OL DD
0.2
0.4
0.4
0.6
V
OL
I
I
I
=3.0mA, V =2.5V
DD
V
OL
OL
OL
Output low level voltage
=3.0mA, V =5.5V
DD
V
=6.0mA, V =4.5V
DD
V
Capacitance/Ta=25°C, f=100kHz
Parameter
Symbol
Conditions
min
typ
2
max
Unit
pF
In/Output capacitance
Input capacitance
C
V
=0V (SDA1, SDA2, SDAC)
I/O
5
5
I/O
C
V
=0V (SCL1, SCL2, SCLC)
IN
2
pF
I
Note: This parameter is sampled and not 100% tested.
AC Electric Characteristics
Fast Mode
V
=2.5V to 5.5V
typ
DD
Parameter
Symbol
unit
min
max
Slave mode SCL clock frequency
SCL clock low time
f
t
t
t
t
t
t
t
t
t
t
t
t
t
t
400
900
kHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
SCLS
LOW
HIGH
AA
1200
600
100
100
600
600
100
0
SCL clock high time
SDA output delay time
SDA data output hold time
Start condition setup time
Start condition hold time
Data in setup time
DH
SU.STA
HD.STA
SU.DAT
HD.DAT
SU.STO
R
Data in hold time
Stop condition setup time
SCL, SDA rise time
600
300
300
SCL, SDA fall time
F
Bus release time
1200
BUF
Noise suppression time
Write cycle time
100
5
SP
WC
No.1811-4/20
LE24CBK222
Standard Mode
V
=2.5V to 5.5V
typ
DD
Parameter
Symbol
unit
min
max
Slave mode SCL clock frequency
SCL clock low time
f
t
t
t
t
t
t
t
t
t
t
t
t
t
t
100
kHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
SCLS
LOW
HIGH
AA
4700
4000
100
SCL clock high time
SDA output delay time
SDA data output hold time
Start condition setup time
Start condition hold time
Data in setup time
3500
100
DH
4700
4000
250
SU.STA
HD.STA
SU.DAT
HD.DAT
SU.STO
R
Data in hold time
0
Stop condition setup time
SCL, SDA rise time
4000
1000
300
SCL, SDA fall time
F
Bus release time
4700
BUF
Noise suppression time
Write cycle time
100
5
SP
WC
Bus Timing
t
F
t
t
HIGH
LOW
t
R
SCL
t
SP
t
t
t
SU.STA
t
HD.STA
HD.DAT
t
HD.STA
SU.STO
t
SDA/IN
SDA/OUT
SP
t
BUF
t
t
DH
AA
Write Timing
t
WC
SCL
SDA
D0
Write data
Start
condition
Stop
condition
Acknowledge
No.1811-5/20
LE24CBK222
Pin Functions
(Port1: For Bank1)
SCL1 (serial clock input) pin
The SCL1 pin is the serial clock input pin used to access the Bank1 area, and processes signals at the rising and falling
edges of the SCL1 clock signal.
This pin must be pulled up by a resistor to the V
output device for use.
level, and wired-ORed with another open drain (or open collector)
DD
While this product is being accessed from the control port, it cannot be accessed from port 1.
SDA1 (serial data input/output) pin
The SDA1 pin is used to transfer serial data to the input/output of the Bank1 side area and it consists of a signal input
pin and n-channel transistor open drain output pin.
Like the SCL1 line, the SDA1 line must be pulled up by a resistor to the V
open drain (or open collector) output device for use.
level and wired-ORed with another
DD
While this product is being accessed from the control port, it cannot be accessed from port 1.
(Port2: For Bank2)
SCL2 (serial clock input) pin
The SCL2 pin is the serial clock input pin used to access the Bank2 area, and processes signals at the rising and falling
edges of the SCL2 clock signal.
This pin must be pulled up by a resistor to the V
output device for use.
level, and wired-ORed with another open drain (or open collector)
DD
While this product is being accessed from the control port, it cannot be accessed from port 2.
SDA2 (serial data input/output) pin
The SDA2 pin is used to transfer serial data to the input/output of the Bank2 side area and it consists of a signal input
pin and n-channel transistor open drain output pin.
Like the SCL2 line, the SDA2 line must be pulled up by a resistor to the V
open drain (or open collector) output device for use.
level and wired-ORed with another
DD
While this product is being accessed from the control port, it cannot be accessed from port 2.
(Control port: For accessing both banks and for accessing the configuration area)
SCLC (serial clock input) pin
The SCLC pin is the serial clock input pin used for accessing both the Bank1 and Bank2 areas and the configuration
area. The signals are processed at the rising and falling edges of the SCLC clock signal.
The pin must be pulled up by a resistor to the VDD level, and it is wired-ORed with another open drain (or open
collector) output device for use.
SDAC (serial data input/output) pin
The SDAC pin is used to transfer serial data to the input/output of both Bank1 and Bank2 areas and the configuration
area, and it consists of a signal input pin and n-channel transistor open drain output pin.
Like the SCLC line, the SDAC line must be pulled up by a resistor to the VDD level, and it is wired-ORed with another
open drain (or open collector) output device for use.
No.1811-6/20
LE24CBK222
Functional Description
1. Start condition
When the SCL line is at the high level, the start condition is established by changing the SDA line from high to low.
The operation of the EEPROM as a slave starts in the start condition.
2. Stop condition
When the SCL line is at the high level, the stop condition is established by changing the SDA line from low to high.
When the device is set up for the read sequence, the read operation is suspended when the stop condition is received,
and the device is set to standby mode. When it is set up for the write sequence, the capture of the write data is ended
when the stop condition is received, and the EEPROM internal write operation is started.
t
t
HD.STA
SU.STA
t
SU.STO
SCL
SDA
Stop
condition
Start
condition
3. Data transfer
Data is transferred by changing the SDA line while the SCL line is low. When the SDA line is changed while the SCL
line is high, the resulting condition will be recognized as the start or stop condition.
t
t
HD.DAT
SU.DAT
SCL
SDA
4. Acknowledge
During data transfer, 8 bits are transferred in succession, and then in the ninth clock cycle period the device on the
system bus receiving the data sets the SDA line to low, and sends the acknowledge signal indicating that the data has
been received. The acknowledge signal is not sent during an EEPROM internal write operation.
SCL
(EEPROM input)
8
9
1
SDA
(Master output)
Acknowledge
bit output
SDA
(EEPROM output)
Start
condition
t
t
DH
AA
No.1811-7/20
LE24CBK222
5. Device addressing
For the purposes of communication, the master device in the system generates the start condition for the slave device.
Communication with a particular slave device is enabled by sending along the SDA bus the device address, which is 7
bits long, and the read/write command code, which is 1 bit long, immediately following the start condition.
The upper four bits of the device address are called the device code which, for this product, are fixed at “1010b.”
The 3-bit slave address (SA2, SA1, and SA0 for access from port 1; SB2, SB1, and SB0 for access from port 2; SC2
and SC1for access from the control port) following the device code are stored in the configuration area, and any
values can be set for these addresses. However, the device address to be used to access the configuration area is fixed
at “1011_100b” and cannot be changed.
When the device code input from SDA and the slave addresses are compared with the product’s device code and
configuration area that were set at the mounting stage and found to match, the product sends the acknowledge signal
during the ninth clock cycle period, and initiates the read or write operation in accordance with the read or write
command code. If they do not match, the EEPROM returns to standby mode. When a read operation is performed
immediately after the slave device has been switched, the random read command must be used.
Slave
Address
Device code
1
1
SA1
0
0
0
0
0
SA2
SA0
SB0
A8*
Port 1
Port 2
R/W
LSB
MSB
Device Address word
1
1
1
1
SB1
0
0
1
SB2
SC2
1
R/W
LSB
MSB
Control Port
(When you access
Bank1, Bank2)
1
SC1
R/W
LSB
MSB
*A8=0:Bank1 access
A8=1:Bank2 access
Control Port
(When you access
configuration area)
1
0
0
R/W
MSB
LSB
The slave addresses are set as follows when this product is shipped.
(SA2, SA1, SA0) = (0, 0, 0)
(SB2, SB1, SB0) = (0, 0, 0)
(SC2, SC1) = (0, 0)
No.1811-8/20
LE24CBK222
6 Internal mode
This product functions in bank mode when it is accessed from port 1 or port 2 and in combined mode when it is
accessed from the control port.
6-1. Bank mode
The EEPOM functions in the bank mode when it is accessed from port 1 or port 2. In the bank mode, Bank1 is
controlled from the port 1 pins (SCL1, SDA1), and Bank2 is controlled from the port 2 pins (SCL2, SDA2).
When read operations are performed, the two banks can be controlled independently of each other, and access to
different addresses can be made at the same time. This enables the EEPROM to be handled as two independent
EEPROM devices incorporated in a single package. In turn, this makes it possible for the Bank1 and Bank2 sides to
be connected to the MCU of separate systems.
When write operations are performed, it is not possible to write data in two banks at the same time. After the write
data has been input into one of the banks and the internal rewriting operation has started, access to the two banks is
not possible during the write time tWC period.
LE24CBK222
00h
SCL1
SDA1
Bank1
(2k-bit)
FFh
00h
SCL2
SDA2
Bank2
(2k-bit)
FFh
6-2. Combine mode
The EEPROM functions in the combined mode when it is accessed from the control port. In the combined mode,
Bank1 and Bank2 are controlled from the control port pins (SCLC, SDAC). The combined mode uses the two-bank
configuration (2K bits + 2K bits) as a pseudo-one-bank configuration (4K bits). Since the memory area is processed
as a single 4K-bit bank in this mode, the MSB address changes from A7 to A8. Input A8=0 to control the Bank1 area,
and input A8=1 to control the Bank2 area.
When, in the combined mode, the last address (0FFh) of Bank1 has been reached in a sequential read operation, the
address (100h) in the Bank2 side is sequentially read. Similarly, when the last address (1FFh) of Bank2 has been
reached, it is rolled over to the Bank1 address (000h) and continues to be read into this address.
Data correlation is guaranteed between the bank mode and combined mode, enabling operations while switching the
mode such as performing write in the combined mode and read in the bank mode.
While the EEPROM is functioning in the combined mode, access from port 1 and port 2 is disabled. In the bank
mode, the read operation stops while data is being read from the ports. And, in the bank mode, while the data of one
of the banks is being written, access from the control port is disabled until the internal write operation is completed.
LE24CBK222
000h
SCLC
SDAC
Bank1
(2k-bit)
0FFh
100h
Bank2
SCL1
SDA1
SCL2
SDA2
(2k-bit)
1FFh
No.1811-9/20
LE24CBK222
Fig.: configuration area memory map
address
0h
1h
Bit7
×
×
Bit6
×
×
Bit5
×
×
Bit4
Bit3
×
×
Bit2
SC2
SA2
SB2
Bit1
SC1
SA1
SB1
Bit0
×
SA0
Slv_ENBC
Slv_ENB1
Slv_ENB2
2h
×
×
×
×
SB0
3h
Reserved R/W
4h
5h
6h
7h
Reserved R/W
Reserved R/W
Reserved R/W
Reserved R/W
8h
9h
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
PB1C
PB1A
PB1B
PB0C
PB0A
PB0B
Ah
Bh
Ch
Dh
Eh
Fh
Reserved R/W
Reserved R/W
Reserved R/W
Reserved R/W
Device Revision (Reserved R only)
7. Configuration area
This product has a configuration area equivalent to 16 addresses that is separate from Bank1 and Bank2. Refer to the
above table for the memory map of the configuration area. Access to the configuration area is performed by inputting
device address “1011_100b” from the control port.
7-1. Slave address bits (SA2, SA1, SA0, SB2, SB1, SB0, SC2, SC1)
The slave address bits are used to set the slave address in the device address. This product does not have slave
address pins, but has slave address bits inside instead. By changing the values of these bits, it is possible to change
the slave addresses at any time. Each port contains a slave address bit, and a different slave address can be assigned
to the ports.
Port
Port 1
Slave address bit
SA2, SA1, SA0
SB2, SB1, SB0
SC2, SC1
Port 2
Control Port
7-2. Slave address enable bits (Slv_ENB1, Slv_ENB2, Slv_ENBC)
The slave address enable bits (Slv_ENB) are used to enable or disable the slave addresses of the ports, which have
been set in the configuration area. When Slv_ENB=”0,” the slave address bits of the ports which have been set in the
configuration area are disabled, and the slave address value input in the device address is don’t care. When another
slave device exists on the same bus as the EEPROM, Slv_ENB=”1” must be set without fail.
Port
Port 1
Slave address enable bit
Slv_ENB1
Port 2
Slv_ENB2
Control Port
Slv_ENBC
7-3. Protect bits (PB1A, PB0A, PB1B, PB0B, PB1C, PB0C)
The protect bits are used to set the access level. The value of the protect bits determine whether the product is to be
protected against read and write operations. The protect bits can be set for each port.
PB1n
PB0n
access level
access inhibit
0
0
1
1
0
1
0
1
Read write prohibition. Only the acknowledge response.
Write prohibition. Only the read.
Read write possible.
7-4. Reserved R/W
The bits in addresses 3h to 7h and Bh to Eh in the configuration area are reserved bits, and have no significance.
Read and write are possible in the areas with these addresses, but it is recommended that the areas not be used.
7-5. Device revision
The revision code of this product is stored in the Fh address of the configuration area. It is read-only and cannot be
rewritten with a write operation.
No.1811-10/20
LE24CBK222
8 EEPROM write operation
8-1. Byte writing
When the EEPROM receives the 7-bit device address and write command code “0” after the start condition, it
generates an acknowledge signal. After this, if it receives the 8-bit word address, generates an acknowledge signal,
receives the 8-bit write data, generates an acknowledge signal and then receives the stop condition, the internal write
operation of the EEPROM in the designated memory address will start. Rewriting is completed in the t
period
WC
after the stop condition. During an EEPROM internal write operation, no input is accepted and no acknowledge
signals are generated.
Device Address
Word Address
Data
S0
/
A8
1
0
1
0
S2
S1
W
SDA
A3 A2
D2
A7
A5 A4
A1 A0
D7 D6 D5 D4 D3
ACK
D1
D0
A6
ACK
R/W
ACK
S2, S1, S0 : Slave Address
A8 : Bank selecting address used during control port access
Access from master
8-2. Page writing
This product enables pages with up to 16 bytes to be written. The basic data transfer procedure is the same as for byte
writing: Following the start condition, the 7-bit device address and write command code “0,” word address (n), and
data (n) are input in this order while confirming acknowledge “0” every 9 bits. The page write mode is established if,
after data (n) is input, the write data (n+1) is input without inputting the stop condition. After this, the write data
equivalent to the largest page size can be received by a continuous process of repeating the receiving of the 8-bit
write data and generating the acknowledge signals.
At the point when the write data (n+1) has been input, the lower 4 bits (A0-A3) of the word addresses are
automatically incremented to form the (n+1) address. In this way, the write data can be successively input, and the
word address on the page is incremented each time the write data is input. If the write data exceeds 16 bytes or the
last address of the page is exceeded, the word address on the page is rolled over. Write data will be input into the
same address two or more times, but in such cases the write data that was input last will take effect. Finally, the
EEPROM internal write operation corresponding to the page size for which the write data is received starts from the
designated memory address when the stop condition is received.
Device Address
Word Address
Data(n)
Data(n+1)
S0
/
A8
1
0
1
0
S2
W
D1 D0
SDA
S1
A3 A2
D2
D0
D1
D7
D6
A7
A5 A4
A1 A0
D7 D6 D5 D4 D3
ACK
A6
ACK
R/W
ACK
ACK
Data(n+x)
D7 D6
D1 D0
D7 D6
D1 D0
D7 D6
D1 D0
D7 D6
D1 D0
ACK
ACK
ACK
Access from master
S2, S1, S0 : Slave Address
A8 : Bank selecting address used during control port access
No.1811-11/20
LE24CBK222
8-3. Acknowledge polling
Acknowledge polling is used to find out when the EEPROM internal write operation is completed. When the stop
condition is received and the EEPROM starts rewriting, all operations are prohibited, and no response can be given to
the signals sent by the master device. Therefore, in order to find out when the EEPROM internal write operation is
completed, the start condition, device address and write command code are sent from the master device to the
EEPROM (slave device), and the response of the slave device is detected.
In other words, if the slave device does not send the acknowledge signal, it means that the internal write operation is
in progress; conversely, if it does send the acknowledge signal, it means that the internal write operation has been
completed.
During Write
During Write
S0
End of Write
S0
S0
1
0
1
1
0
1
1
0
1
0
S2
W
0
S2
W
0
S2
W
SDA
S1
/
S1
/
S1
/
A8
A8
A8
NO ACK
R/W
ACK
R/W
NO ACK
R/W
S2, S1, S0 : Slave Address
A8 : Bank selecting address used during control port access
Access from master
No.1811-12/20
LE24CBK222
9 EEPROM read operations
9-1. Current address reading
The address equivalent to the memory address accessed last +1 is held as the internal address of the EEPROM for
both write* and read operations. Therefore, provided that the master device has recognized the position of the
EEPROM address pointer, data can be read from the memory address with the current address pointer without
specifying the word address.
As with writing, current address reading involves receiving the 7-bit device address and read command code “1”
following the start condition, at which time the EEPROM generates an acknowledge signal. After this, the 8-bit data
of the (n+1) address is output serially starting with the highest bits. After the 8 bits have been output, by not sending
an acknowledge signal and inputting the stop condition, the EEPROM completes the read operation and is set to
standby mode.
If the previous read address is the last address, the address for the current address reading is rolled over to become
address 0.
* The current address assigned after a page write is the number of bytes written at the designated word address
plus 1 if the volume of the write data is greater than 1 byte or less than or equal to 16 bytes, and is the designated
word address if the volume of the write data is 16 bytes or more. If the last address of the page (A3 to A0 =
1111b) is specified as the word address for a byte write, the internal address after the write becomes the first
address in that page (A3 to A0 = 0000b).
Device Address
Data(Current Address)
S0
/
A8
1
0
1
0
S2
R
SDA
S1
D2
D7 D6 D5 D4 D3
ACK
D1
D0
NO ACK
R/W
S2, S1, S0 : Slave Address
A8 : Bank selecting address used during control port access
Access from master
9-2. Random read
Random read is a mode in which any memory address is specified and its data read. The address is specified by a
dummy write input.
First, when the EEPROM receives the 7-bit device address and write command code “0” following the start condition,
it generates an acknowledge signal. It then receives the 8-bit word address, and generates an acknowledge signal.
Through these operations, the word address is loaded into the address counter inside the EEPROM.
Next, the start condition is input again and the current read is initiated. This causes the data of the word address that
was input using the dummy write input to be output. If, after the data is output, an acknowledge signal is not sent and
the stop condition is input, reading is completed, and the EEPROM returns to standby mode.
Device Address
Word Address
Device Address
Data(n)
S0
/
A8
S0
/
A8
1
0
1
1
0
1
D0
0
S2
W
0
S2
D7
SDA
S1
A3 A2
A5 A4
A1 A0
A7
S1
R
A6
ACK
R/W
Dummy Write
ACK
NO ACK
ACK
R/W
Current Address Read
S2, S1, S0 : Slave Address
A8 : Bank selecting address used during control port access
Access from master
No.1811-13/20
LE24CBK222
9-3. Sequential read
In this mode, the data is read continuously, and sequential read operations can be performed with both current address
read and random read. If, after the 8-bit data has been output, acknowledge “0” is input and reading is continued
without issuing the stop condition, the address is incremented, and the data of the next address is output.
If acknowledge “0” continues to be input after the data has been output in this way, the data is successively output
while the address is incremented. When the last address is reached, it is rolled over to address 0, and the data
continues to be read. As with current address read and random read, the operation is completed by inputting the stop
condition without sending an acknowledge signal.
*: For accesses from port 1 or port 2, the last address is FFh and for accesses to Bank1 or Bank2 from the control port,
it is 1FFh. And, for accesses to the configuration area, the last address is Fh.
Device Address
Data(n)
Data(n+x)
Data(n+1)
S0
/
A8
1
0
1
R
D7
D1 D0
D7
D1 D0
D7
D6
D1 D0
0
S2
D6
D6
SDA
S1
ACK
R/W
ACK
ACK
NO ACK
Access from master
S2, S1, S0 : Slave Address
A8 : Bank selecting address used during control port access
10. Operations during protect
The access level can be set for each port by using the values of the protect bits stored in the configuration area.
However, access to the configuration area from the control port (device address 1011_100b) is always enabled
regardless of the access level of the control port.
10-1. Access disabled state (PB1n=0, PB0n=0)
When the protect bits in the configuration area are set to”00b,” all the operations from the corresponding port are
protected, and the access from the port is disabled. When a read or write operation is input from a port in this state,
the product does not start the operation and enters the standby state. In addition, it does not return an acknowledge
signal.
10-2. Read/write disabled state (PB1n=0, PB0n=1)
When the protect bits in the configuration area are set to “01b,” the read and write operations from the corresponding
port are protected. When a read or write operation is input from a port in this state, the product returns an
acknowledge signal and enters the standby state without initiating a read or write operation.
*: In read operations, the product generates an acknowledge signal on the high-to-low transition of the SCL clock in
the 9th cycle from the start condition. It enters the standby state on the low-to-high transition of the SCL clock in the
same cycle.
10-3. Write prohibited state (PB1n=1, PB0n=0)
When the protect bits in the configuration area are set to “10b,” the write operations from the corresponding port are
protected. When a write operation is input from a port in this state, the product returns an acknowledge signal and
enters the standby state without initiating a write operation.
10-4. Read/write enabled state (PB1n=1, PB0n=1)
When the protect bits in the configuration area are set to “11b,” the read operations and write operations from the
corresponding port are enabled.
No.1811-14/20
LE24CBK222
Application Notes
1) Software reset function
Software reset (start condition + 9 dummy clock cycles + start condition), shown in the figure below, is executed in
order to avoid erroneous operation after power-on and to reset while the command input sequence. During the
dummy clock input period, the SDA bus must be opened (set to high by a pull-up resistor). Since it is possible for
the ACK output and read data to be output from the EEPROM during the dummy clock period, forcibly entering H
will result in an overcurrent flow.
Note that this software reset function does not work during the internal write cycle.
Dummy clock ×9
SCL
1
2
8
9
SDA
Start
condition
Start
condition
2) Pull-up resistor of SDA pin
Due to the demands of the I2C bus protocol function, the SDA pin must be connected to a pull-up resistor (with a
resistance from several kΩ to several tens of kΩ) without fail. The appropriate value must be selected for this
resistance (R ) on the basis of the V and I of the microcontroller and other devices controlling this product as
PU IL IL
well as the V –I
characteristics of the product. Generally, when the resistance is too high, the operating
OL OL
frequency will be restricted; conversely, when it is too low, the operating current consumption will increase.
R
PU
maximum resistance
The maximum resistance must be set in such a way that the bus potential, which is determined by the sum total (I )
L
of the input leaks of the devices connected to the SDA bus and by R , can completely satisfy the input high level
PU
(V min) of the microcontroller and EEPROM. However, a resistance value that satisfies SDA rise time t and fall
IH
R
time t must be set.
F
R
PU
maximum value = (V
- V )/I
IH L
DD
Example: When V =3.0V and I = 2μA
DD
L
R
PU
maximum value = (3.0V − 3.0V × 0.8)/2μA = 300kΩ
R
PU
R
PU
minimum value
SDA
C
A resistance corresponding to the low-level output
voltage (V max) of SANYO’s EEPROM must be set.
EEPROM
Master
Device
OL
BUS
I
L
I
L
R
PU
minimum value = (V
− V )/I
DD OL OL
Example: When V =3.0V, V
DD
PU
= 0.4V and I = 1mA
OL
OL
minimum value = (3.0V − 0.4)/1mA = 2.6kΩ
R
Recommended R
setting
is set to strike a good balance between the operating frequency requirements and power consumption. If it is
PU
R
PU
assumed that the SDA load capacitance is 50pF and the SDA output data strobe time is 500ns, R
will be about
PU
R
PU
= 500ns/50pF = 10kΩ.
No.1811-15/20
LE24CBK222
3) Precautions when turning on the power
This product contains a power-on reset circuit for preventing the inadvertent writing of data when the power is
turned on. The following conditions must be met in order to ensure stable operation of this circuit. No data
guarantees are given in the event of an instantaneous power failure during the internal write operation.
V
=2.5 to 5.5V
typ
DD
Item
Symbol
unit
min
max
Power rise time
t
t
100
0.2
ms
ms
V
RISE
Power off time
10
t
OFF
Power bottom voltage
V
bot
RISE
V
DD
0V
t
OFF
V
bot
Notes:
1) The SDA pin must be set to high and the SCL pin to low or high.
2) Steps must be taken to ensure that the SDA and SCL pins are not placed in a high-impedance state.
A. If it is not possible to satisfy the instruction 1 in Note above, and SDA is set to low during power rise
After the power has stabilized, the SCL and SDA pins must be controlled as shown below, with both pins set to high.
V
V
DD
DD
t
LOW
SCL
SDA
SCL
SDA
t
t
SU.DAT
t
SU.DAT
DH
B. If it is not possible to satisfy the instruction 2 in Note above
After the power has stabilized, software reset must be executed.
C. If it is not possible to satisfy the instructions both 1 and 2 in Note above
After the power has stabilized, the steps in A must be executed, then software reset must be executed.
4) Noise filter for the SCL and SDA pins
This product contains a filter circuit for eliminating noise at the SCL and SDA pins. Pulses of 100ns or less are not
recognized because of this function.
5) Function to inhibit writing when supply voltage is low
This product contains a supply voltage monitoring circuit that inhibits inadvertent writing below the guaranteed
operating supply voltage range. The data is protected by ensuring that write operations are not started at voltages
(typ.) of 1.3V and below.
6) Initial values in the configuration
The slave address values as well as the slave address enable bit and protect bit values of the ports are stored in the
configuration area. These values are set as follows when the EEPROM is shipped:
- Slave address values: “000b” for all ports
- Slave address enable bits: “1b” for all ports (enabled)
- Protect bit values: “11b” for all ports (no protection)
When these values are to be changed, input the device address “1011_100b” from the control port, and perform the
write operation.
No.1811-16/20
LE24CBK222
7) Precautions when changing the mode
This product enables to actively change the bank accessing mode during period in which no write operation is
performed between the bank operation mode (access from port 1 or port 2 to Bank1 or Bank2) and the combined
operation mode (access from the control port to both banks). However, the current address value for each mode is not
held internally. When conducting read operations after changing the mode, random access read must be performed
without fail.
When switching the bank accessing mode, start the operations in the next mode after the operations in the previous
mode have been completed (when the stop condition is input or no acknowledge “0” input for a sequential read).
8) Writing with a ROM writer from the control port
This product enables two-bank configuration (2K bits + 2K bits) to be used as a pseudo-one-bank configuration (4K
bits) by accessing the memory areas from the control port (SCLC, SDAC). As a result, data can be written using a
ROM writer with the EEPROM serving as a regular 4K-bit EEPROM. Fix the port 1 and port 2 pins to high or low.
LE24C04x
LE24CBK222
(Standard 4k-bit EEPROM)
V
V
DD
8
7
6
5
8
7
6
5
1
2
3
4
1
2
3
4
SCL1
SDA1
SDA2
GND
S0
DD
SCL2
SCLC
SDAC
WP
S1
SCL
SDA
S2
GND
ROM writer connection example
LE24CBK222
V
8
7
6
5
1
2
3
4
SCL1
SDA1
SDA2
GND
DD
SCL2
SCLC
SDAC
Memory Area (4K-bit)
000h
Bank1
(2k-bit)
A8=0
The MSB address in combined mode is A8. A8 is used to select the
Bank1 or Bank2 area. Set A8 = 0 to control the Bank1 area, or A8 = 1
to control the Bank2 area.
0FFh
100h
Bank2
(2k-bit)
A8=1
1FFh
No.1811-17/20
LE24CBK222
10) System Configuration Image
(HDMI System)
This product can support two HDMI ports simultaneously. Both ports can be accessed at the same time when
performing read operations of the ports. All the data can be written together from a image processor into the areas
allocated to the two ports from the control port in a single operation.
DDC
Port 1
LE24CBK222
I2C
Port 2
Control Port
Image
Processor
HDMI Switch
Level Shifter
TMDS
HDMI
Receiver
DDC
Level Shifter
TMDS
LCD-TV
No.1811-18/20
LE24CBK222
10) Peripheral Circuit Diagram
Example of connection with HDMI receiver
V
(3V)*1
DD
*2
*2
*4 R
PU
DDC+5V
DDC_CLK
HDMI
8:V
DD
Connector
DDC_DAT
LE24CBK222
GND
1:SCL1
V
(3V)
DD
2:SDA1
*2
6:SCLC
5:SDAC
Controller
*4 R
PU
DDC+5V
DDC_CLK
HDMI
7:SCL2
3:SDA2
Connector
DDC_DAT
GND
4:GND
V
(3V)
DD
*4 R
SCL1
SDA1
PU
HDMI
Recever
HDMI
Switch
SCL2
SDA2
SCL(3V)
SDA(3V)
*3
(Level Shifter)
*1: System power supply (3V) for HDMI receiver, etc.
*2: Reverse-current preventing diode
This device can be operated by supplying power from any of the connected HDMI connectors (DDC + 5V) or the
system power supply (3V). However, the supply voltage must be set so that the voltage stepped-down by the
reverse-current preventing diode is within the guaranteed operation voltage range of this device.
*3: Level shifter
When connecting the 5V HDMI connector side with a 3V system, level shifters must generally be inserted. However,
this is not necessary when the HDMI receiver supports 5V input signals.
*4: Pull-up resistors for the I2C and DDC interfaces.
See item 2) in the Application Notes for the resistance value settings.
No.1811-19/20
LE24CBK222
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of January, 2011. Specifications and information herein are subject
to change without notice.
PS No.1811-20/20
相关型号:
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