LM285D-2.5R2 [ONSEMI]
Micropower Voltage Reference Diodes; 微功耗电压基准二极管型号: | LM285D-2.5R2 |
厂家: | ONSEMI |
描述: | Micropower Voltage Reference Diodes |
文件: | 总8页 (文件大小:80K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
LM285, LM385B
Micropower Voltage
Reference Diodes
The LM285/LM385 series are micropower two−terminal bandgap
voltage regulator diodes. Designed to operate over a wide current
range of 10 mA to 20 mA, these devices feature exceptionally low
dynamic impedance, low noise and stable operation over time and
temperature. Tight voltage tolerances are achieved by on−chip
trimming. The large dynamic operating range enables these devices to
be used in applications with widely varying supplies with excellent
regulation. Extremely low operating current make these devices ideal
for micropower circuitry like portable instrumentation, regulators and
other analog circuitry where extended battery life is required.
The LM285/LM385 series are packaged in a low cost TO−226
plastic case and are available in two voltage versions of 1.235 V and
2.500 V as denoted by the device suffix (see Ordering Information
table). The LM285 is specified over a −40°C to +85°C temperature
range while the LM385 is rated from 0°C to +70°C.
http://onsemi.com
MARKING
DIAGRAMS
LM285
Z−xxx
ALYWW
N.C.
Cathode
Anode
TO−92−3 (TO−226)
Z SUFFIX
CASE 29
The LM385 is also available in a surface mount plastic package in
voltages of 1.235 V and 2.500 V.
8
1
8
y85−z
ALYW
1
Features
SOIC−8
D SUFFIX
CASE 751
• Pb−Free Packages are Available
• Operating Current from 10 mA to 20 mA
• 1.0%, 1.5%, 2.0% and 3.0% Initial Tolerance Grades
• Low Temperature Coefficient
• 1.0 W Dynamic Impedance
• Surface Mount Package Available
xxx
y
= 1.2 or 2.5
= 2 or 3
= 1 or 2
z
A
L
= Assembly Location
= Wafer Lot
Y
= Year
W, WW = Work Week
Cathode
10 k
3
2
1
8
1
2
3
4
N.C.
N.C.
Cathode
360 k
Open
for 1.235 V
7
N.C.
6
N.C.
N.C.
5
N.C.
Anode
(Bottom View)
600 k
8.45 k
Standard Application
74.3 k
600 k
+
Open
for 2.5 V
3.3 k
1.5 V
Battery
425 k
−
1.235 V
LM385−1.2
600 k
500 W
100 k
Anode
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Figure 1. Representative Schematic Diagram
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
July, 2004 − Rev. 5
LM285/D
LM285, LM385B
MAXIMUM RATINGS (T = 25°C, unless otherwise noted)
A
Rating
Symbol
Value
30
Unit
mA
mA
°C
Reverse Current
Forward Current
I
R
I
F
10
Operating Ambient Temperature Range
T
A
LM285
LM385
−40 to +85
0 to +70
Operating Junction Temperature
Storage Temperature Range
T
+150
°C
°C
V
J
T
stg
−65 to + 150
Electrostatic Discharge Sensitivity (ESD)
Human Body Model (HBM)
ESD
4000
400
Machine Model (MM)
Charged Device Model (CDM)
2000
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS (T = 25°C, unless otherwise noted)
A
LM285−1.2
Typ
LM385−1.2/LM385B−1.2
Min
Max
Min
Typ
Max
Characteristic
Symbol
Unit
Reverse Breakdown Voltage (I
LM285−1.2/LM385B−1.2
v I v 20 mA)
V
(BR)R
V
Rmin
R
1.223
1.200
1.235
−
1.247 1.223
1.270 1.210
1.235
−
1.247
1.260
T = T
to T
(Note 1)
A
low
high
LM385−1.2
T = T
−
−
−
−
−
−
1.205
1.192
1.235
−
1.260
1.273
to T
(Note 1)
A
low
high
Minimum Operating Current
I
mA
Rmin
T = 25°C
−
−
8.0
−
8.0
−
A
10
20
15
20
T = T
to T
(Note 1)
A
low
high
−
Reverse Breakdown Voltage Change with Current
DV
mV
(BR)R
I
v I v 1.0 mA, T = +25°C
−
−
−
−
−
−
−
−
1.0
1.5
10
−
−
−
−
−
−
−
−
1.0
1.5
20
Rmin
R
A
T = T
to T (Note 1)
high
A
low
1.0 mA v I v 20 mA, T = +25°C
R
A
20
25
T = T
to T (Note 1)
high
A
low
Reverse Dynamic Impedance
= 100 mA, T = +25°C
Z
W
ppm/°C
mV
−
−
0.6
80
−
−
−
−
0.6
80
−
−
I
R
A
Average Temperature Coefficient
DV
/DT
(BR)
10 mA v I v 20 mA, T = T
to T
(Note 1)
R
A
low
high
Wideband Noise (RMS)
n
I
= 100 mA, 10 Hz v f v 10 kHz
−
−
60
20
−
−
−
−
60
20
−
−
R
Long Term Stability
= 100 mA, T = +25°C ± 0.1°C
S
ppm/kHR
V
I
R
A
Reverse Breakdown Voltage (I
LM285−2.5/LM385B−2.5
v I v 20 mA)
V
(BR)R
Rmin
R
2.462
2.415
2.5
−
2.538 2.462
2.585 2.436
2.5
−
2.538
2.564
T = T
to T
(Note 1)
A
low
high
LM385−2.5
T = T to T
−
−
−
−
−
−
2.425
2.400
2.5
−
2.575
2.600
(Note 1)
A
low
high
Minimum Operating Current
T = 25°C
I
mA
Rmin
−
−
13
−
20
30
−
−
13
−
20
30
A
T = T
to T
(Note 1)
A
low
high
1. T
= −40°C for LM285−1.2, LM285−2.5
= +85°C for LM285−1.2, LM285−2.5
= 0°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5
low
T
T
T
high
low
= +70°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5
high
http://onsemi.com
2
LM285, LM385B
ELECTRICAL CHARACTERISTICS (T = 25°C, unless otherwise noted)
A
LM285−1.2
LM385−1.2/LM385B−1.2
Min
Typ
Max
Min
Typ
Max
Characteristic
Symbol
Unit
Reverse Breakdown Voltage Change with Current
DV
mV
(BR)R
I
v I v 1.0 mA, T = +25°C
−
−
−
−
1.0
1.5
−
−
−
−
2.0
2.5
Rmin
R
A
T = T
to T (Note 2)
high
A
low
1.0 mA v I v 20 mA, T = +25°C
R
A
−
−
−
−
10
20
−
−
−
−
20
25
T = T
to T (Note 2)
high
A
low
Reverse Dynamic Impedance
= 100 mA, T = +25°C
Z
W
I
R
−
−
−
−
0.6
80
−
−
−
−
−
−
−
−
0.6
80
−
−
−
−
A
Average Temperature Coefficient
DV
/DT
ppm/°C
mV
(BR)
20 mA v I v 20 mA, T = T
to T
(Note 2)
R
A
low
high
Wideband Noise (RMS)
n
I
R
= 100 mA, 10 Hz v f v 10 kHz
120
20
120
20
Long Term Stability
= 100 mA, T = +25°C ± 0.1°C
S
ppm/kHR
I
R
A
2. T
= −40°C for LM285−1.2, LM285−2.5
= +85°C for LM285−1.2, LM285−2.5
= 0°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5
= +70°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5
low
T
T
T
high
low
high
http://onsemi.com
3
LM285, LM385B
TYPICAL PERFORMANCE CURVES FOR LM285−1.2/385−1.2/385B−1.2
100
10
10
8.0
6.0
4.0
T = +ꢂ85°C
A
+ꢂ25°C
T = +ꢂ85°C
A
1.0
0.1
−ꢂ40°C
2.0
+ꢂ25°C
0
−ꢂ40°C
−2.0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.01
0.1
1.0
I , REVERSE CURRENT (mA)
10
100
125
1.1
V( , REVERSE VOLTAGE (V)
BR)
R
Figure 2. Reverse Characteristics
Figure 3. Reverse Characteristics
1.250
1.240
1.2
1.0
0.8
0.6
0.4
0.2
0
I
R
= 100 mA
T = −ꢂ40°C
A
1.230
1.220
1.210
+ꢂ25°C
+ꢂ85°C
−50
−25
0
25
50
75
100
0.01
0.1
1.0
10
100
T , AMBIENT TEMPERATURE (°C)
Aꢀ
I , FORWARD CURRENT (mA)
Fꢀ
Figure 4. Forward Characteristics
Figure 5. Temperature Drift
875
750
625
500
375
250
125
0
1.50
1.25
Input
DUT
100 k
1.00
0.75
0.50
0.25
0
Output
10
5.0
0
10
100
1.0ꢀK
10ꢀK
100ꢀk
0
0.1 0.2 0.3
0.6 0.7 0.8 0.9 1.0
f, FREQUENCY (Hz)
t, TIME (ms)
Figure 6. Noise Voltage
Figure 7. Response Time
http://onsemi.com
4
LM285, LM385B
TYPICAL PERFORMANCE CURVES FOR LM285−2.5/385−2.5/385B−2.5
100
10
10
8.0
6.0
T = +ꢂ85°C
A
T = +ꢂ85°C
A
+ꢂ25°C
−ꢂ40°C
4.0
+
25°C
1.0
0.1
2.0
0
−ꢂ40°C
−2.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.01
0.1
1.0
I , REVERSE CURRENT (mA)
10
100
125
1.1
V( , REVERSE VOLTAGE (V)
BR)
R
Figure 8. Reverse Characteristics
Figure 9. Reverse Characteristics
2.520
2.510
2.500
2.490
2.480
2.470
2.460
2.450
1.2
1.0
0.8
0.6
0.4
0.2
0
I
R
= 100 mA
T = −ꢂ40°C
A
+ꢂ85°C
+ꢂ25°C
−50
−25
0
25
50
75
100
0.01
0.1
1.0
10
100
T , AMBIENT TEMPERATURE (°C)
Aꢀ
I , FORWARD CURRENT (mA)
Fꢀ
Figure 10. Forward Characteristics
Figure 11. Temperature Drift
3.00
2.50
Input
DUT
1500
100 k
2.00
1.50
1.00
0.50
0
1250
1000
750
500
250
0
Output
10
5.0
0
10
100
1.0ꢀK
10ꢀK
100ꢀk
0
0.1 0.2 0.3
0.6 0.7 0.8 0.9 1.0
f, FREQUENCY (Hz)
t, TIME (ms)
Figure 12. Noise Voltage
Figure 13. Response Time
http://onsemi.com
5
LM285, LM385B
ORDERING INFORMATION
Reverse Break−Down
Voltage
†
Device
LM285Z−2.5
LM285D−2.5
LM285Z−1.2
LM285Z−1.2G
Operating Temperature Range
T = −40°C to +85°C
Package
TO−92
Shipping
2.500 V
2.500 V
1.235 V
1.235 V
2000 Units / Bag
98 Units / Rail
A
T = −40°C to +85°C
A
SOIC−8
TO−92
T = −40°C to +85°C
A
2000 Units / Bag
2000 Units / Bag
T = −40°C to +85°C
A
TO−92
(Pb−Free)
LM285D−1.2R2
T = −40°C to +85°C
1.235 V
1.235 V
SOIC−8
2000 / Tape & Reel
2000 / Tape & Reel
A
LM285D−1.2R2G
T = −40°C to +85°C
A
SOIC−8
(Pb−Free)
LM285Z−2.5RA
LM285Z−1.2RA
LM285Z−2.5RP
LM285D−1.2
T = −40°C to +85°C
2.500 V
1.235 V
2.500 V
1.235 V
2.500 V
2.500 V
TO−92
TO−92
TO−92
SOIC−8
SOIC−8
2000 / Tape & Reel
2500 / Tape & Reel
2000 Units / Fan−Fold
98 Units / Rail
A
T = −40°C to +85°C
A
T = −40°C to +85°C
A
T = −40°C to +85°C
A
LM285D−2.5R2
LM285D−2.5R2G
T = −40°C to +85°C
A
2500 / Tape & Reel
2500 / Tape & Reel
T = −40°C to +85°C
A
SOIC−8
(Pb−Free)
LM385BD−1.2
T = 0°C to +70°C
1.235 V
1.235 V
SOIC−8
98 Units / Rail
98 Units / Rail
A
LM385BD−1.2G
T = 0°C to +70°C
A
SOIC−8
(Pb−Free)
LM385BD−1.2R2
T = 0°C to +70°C
1.235 V
1.235 V
SOIC−8
2500 / Tape & Reel
2500 / Tape & Reel
A
LM385BD−1.2R2G
T = 0°C to +70°C
A
SOIC−8
(Pb−Free)
LM385BD−2.5
LM385BD−2.5R2
LM385BZ−1.2
T = 0°C to +70°C
2.500 V
2.500 V
1.235 V
SOIC−8
SOIC−8
SOIC−8
98 Units / Rail
2500 / Tape & Reel
98 Units / Rail
A
T = 0°C to +70°C
A
T = 0°C to +70°C
A
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
6
LM285, LM385B
PACKAGE DIMENSIONS
TO−92 (TO−226)
Z SUFFIX
CASE 29−11
ISSUE AL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
A
B
R
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
P
L
INCHES
DIM MIN MAX
MILLIMETERS
MIN
4.45
4.32
3.18
0.407
1.15
2.42
0.39
12.70
6.35
2.04
−−−
MAX
5.20
5.33
4.19
0.533
1.39
2.66
0.50
−−−
SEATING
PLANE
K
A
B
C
D
G
H
J
0.175
0.170
0.125
0.016
0.045
0.095
0.015
0.500
0.250
0.080
−−−
0.205
0.210
0.165
0.021
0.055
0.105
0.020
−−−
D
X X
G
K
L
J
H
V
−−−
−−−
N
P
R
V
0.105
0.100
−−−
2.66
2.54
−−−
C
0.115
0.135
2.93
3.43
SECTION X−X
−−−
−−−
1
N
N
http://onsemi.com
7
LM285, LM385B
PACKAGE DIMENSIONS
SOIC−8 NB
CASE 751−07
ISSUE AB
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
−X−
A
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
8
5
4
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
S
M
M
B
0.25 (0.010)
Y
1
K
−Y−
G
MILLIMETERS
DIM MIN MAX
INCHES
MIN
MAX
0.197
0.157
0.069
0.020
A
B
C
D
G
H
J
K
M
N
S
4.80
3.80
1.35
0.33
5.00 0.189
4.00 0.150
1.75 0.053
0.51 0.013
C
N X 45
_
SEATING
PLANE
−Z−
1.27 BSC
0.050 BSC
0.10 (0.004)
0.10
0.19
0.40
0
0.25 0.004
0.25 0.007
1.27 0.016
0.010
0.010
0.050
8
0.020
0.244
M
J
H
D
8
0
_
_
_
_
0.25
5.80
0.50 0.010
6.20 0.228
M
S
S
X
0.25 (0.010)
Z
Y
SOLDERING FOOTPRINT*
1.52
0.060
7.0
0.275
4.0
0.155
0.6
0.024
1.270
0.050
mm
inches
ǒ
Ǔ
SCALE 6:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SENSEFET is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
For additional information, please contact your
local Sales Representative.
LM285/D
相关型号:
©2020 ICPDF网 联系我们和版权申明