LM285D-2.5R2 [ONSEMI]

Micropower Voltage Reference Diodes; 微功耗电压基准二极管
LM285D-2.5R2
型号: LM285D-2.5R2
厂家: ONSEMI    ONSEMI
描述:

Micropower Voltage Reference Diodes
微功耗电压基准二极管

二极管 光电二极管
文件: 总8页 (文件大小:80K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
LM285, LM385B  
Micropower Voltage  
Reference Diodes  
The LM285/LM385 series are micropower two−terminal bandgap  
voltage regulator diodes. Designed to operate over a wide current  
range of 10 mA to 20 mA, these devices feature exceptionally low  
dynamic impedance, low noise and stable operation over time and  
temperature. Tight voltage tolerances are achieved by on−chip  
trimming. The large dynamic operating range enables these devices to  
be used in applications with widely varying supplies with excellent  
regulation. Extremely low operating current make these devices ideal  
for micropower circuitry like portable instrumentation, regulators and  
other analog circuitry where extended battery life is required.  
The LM285/LM385 series are packaged in a low cost TO−226  
plastic case and are available in two voltage versions of 1.235 V and  
2.500 V as denoted by the device suffix (see Ordering Information  
table). The LM285 is specified over a −40°C to +85°C temperature  
range while the LM385 is rated from 0°C to +70°C.  
http://onsemi.com  
MARKING  
DIAGRAMS  
LM285  
Z−xxx  
ALYWW  
N.C.  
Cathode  
Anode  
TO−92−3 (TO−226)  
Z SUFFIX  
CASE 29  
The LM385 is also available in a surface mount plastic package in  
voltages of 1.235 V and 2.500 V.  
8
1
8
y85−z  
ALYW  
1
Features  
SOIC−8  
D SUFFIX  
CASE 751  
Pb−Free Packages are Available  
Operating Current from 10 mA to 20 mA  
1.0%, 1.5%, 2.0% and 3.0% Initial Tolerance Grades  
Low Temperature Coefficient  
1.0 W Dynamic Impedance  
Surface Mount Package Available  
xxx  
y
= 1.2 or 2.5  
= 2 or 3  
= 1 or 2  
z
A
L
= Assembly Location  
= Wafer Lot  
Y
= Year  
W, WW = Work Week  
Cathode  
10 k  
3
2
1
8
1
2
3
4
N.C.  
N.C.  
Cathode  
360 k  
Open  
for 1.235 V  
7
N.C.  
6
N.C.  
N.C.  
5
N.C.  
Anode  
(Bottom View)  
600 k  
8.45 k  
Standard Application  
74.3 k  
600 k  
+
Open  
for 2.5 V  
3.3 k  
1.5 V  
Battery  
425 k  
1.235 V  
LM385−1.2  
600 k  
500 W  
100 k  
Anode  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
Figure 1. Representative Schematic Diagram  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
July, 2004 − Rev. 5  
LM285/D  
LM285, LM385B  
MAXIMUM RATINGS (T = 25°C, unless otherwise noted)  
A
Rating  
Symbol  
Value  
30  
Unit  
mA  
mA  
°C  
Reverse Current  
Forward Current  
I
R
I
F
10  
Operating Ambient Temperature Range  
T
A
LM285  
LM385  
−40 to +85  
0 to +70  
Operating Junction Temperature  
Storage Temperature Range  
T
+150  
°C  
°C  
V
J
T
stg  
−65 to + 150  
Electrostatic Discharge Sensitivity (ESD)  
Human Body Model (HBM)  
ESD  
4000  
400  
Machine Model (MM)  
Charged Device Model (CDM)  
2000  
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit  
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,  
damage may occur and reliability may be affected.  
ELECTRICAL CHARACTERISTICS (T = 25°C, unless otherwise noted)  
A
LM285−1.2  
Typ  
LM385−1.2/LM385B−1.2  
Min  
Max  
Min  
Typ  
Max  
Characteristic  
Symbol  
Unit  
Reverse Breakdown Voltage (I  
LM285−1.2/LM385B−1.2  
v I v 20 mA)  
V
(BR)R  
V
Rmin  
R
1.223  
1.200  
1.235  
1.247 1.223  
1.270 1.210  
1.235  
1.247  
1.260  
T = T  
to T  
(Note 1)  
A
low  
high  
LM385−1.2  
T = T  
1.205  
1.192  
1.235  
1.260  
1.273  
to T  
(Note 1)  
A
low  
high  
Minimum Operating Current  
I
mA  
Rmin  
T = 25°C  
8.0  
8.0  
A
10  
20  
15  
20  
T = T  
to T  
(Note 1)  
A
low  
high  
Reverse Breakdown Voltage Change with Current  
DV  
mV  
(BR)R  
I
v I v 1.0 mA, T = +25°C  
1.0  
1.5  
10  
1.0  
1.5  
20  
Rmin  
R
A
T = T  
to T (Note 1)  
high  
A
low  
1.0 mA v I v 20 mA, T = +25°C  
R
A
20  
25  
T = T  
to T (Note 1)  
high  
A
low  
Reverse Dynamic Impedance  
= 100 mA, T = +25°C  
Z
W
ppm/°C  
mV  
0.6  
80  
0.6  
80  
I
R
A
Average Temperature Coefficient  
DV  
/DT  
(BR)  
10 mA v I v 20 mA, T = T  
to T  
(Note 1)  
R
A
low  
high  
Wideband Noise (RMS)  
n
I
= 100 mA, 10 Hz v f v 10 kHz  
60  
20  
60  
20  
R
Long Term Stability  
= 100 mA, T = +25°C ± 0.1°C  
S
ppm/kHR  
V
I
R
A
Reverse Breakdown Voltage (I  
LM285−2.5/LM385B−2.5  
v I v 20 mA)  
V
(BR)R  
Rmin  
R
2.462  
2.415  
2.5  
2.538 2.462  
2.585 2.436  
2.5  
2.538  
2.564  
T = T  
to T  
(Note 1)  
A
low  
high  
LM385−2.5  
T = T to T  
2.425  
2.400  
2.5  
2.575  
2.600  
(Note 1)  
A
low  
high  
Minimum Operating Current  
T = 25°C  
I
mA  
Rmin  
13  
20  
30  
13  
20  
30  
A
T = T  
to T  
(Note 1)  
A
low  
high  
1. T  
= −40°C for LM285−1.2, LM285−2.5  
= +85°C for LM285−1.2, LM285−2.5  
= 0°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5  
low  
T
T
T
high  
low  
= +70°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5  
high  
http://onsemi.com  
2
 
LM285, LM385B  
ELECTRICAL CHARACTERISTICS (T = 25°C, unless otherwise noted)  
A
LM285−1.2  
LM385−1.2/LM385B−1.2  
Min  
Typ  
Max  
Min  
Typ  
Max  
Characteristic  
Symbol  
Unit  
Reverse Breakdown Voltage Change with Current  
DV  
mV  
(BR)R  
I
v I v 1.0 mA, T = +25°C  
1.0  
1.5  
2.0  
2.5  
Rmin  
R
A
T = T  
to T (Note 2)  
high  
A
low  
1.0 mA v I v 20 mA, T = +25°C  
R
A
10  
20  
20  
25  
T = T  
to T (Note 2)  
high  
A
low  
Reverse Dynamic Impedance  
= 100 mA, T = +25°C  
Z
W
I
R
0.6  
80  
0.6  
80  
A
Average Temperature Coefficient  
DV  
/DT  
ppm/°C  
mV  
(BR)  
20 mA v I v 20 mA, T = T  
to T  
(Note 2)  
R
A
low  
high  
Wideband Noise (RMS)  
n
I
R
= 100 mA, 10 Hz v f v 10 kHz  
120  
20  
120  
20  
Long Term Stability  
= 100 mA, T = +25°C ± 0.1°C  
S
ppm/kHR  
I
R
A
2. T  
= −40°C for LM285−1.2, LM285−2.5  
= +85°C for LM285−1.2, LM285−2.5  
= 0°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5  
= +70°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5  
low  
T
T
T
high  
low  
high  
http://onsemi.com  
3
 
LM285, LM385B  
TYPICAL PERFORMANCE CURVES FOR LM285−1.2/385−1.2/385B−1.2  
100  
10  
10  
8.0  
6.0  
4.0  
T = +ꢂ85°C  
A
+ꢂ25°C  
T = +ꢂ85°C  
A
1.0  
0.1  
−ꢂ40°C  
2.0  
+ꢂ25°C  
0
−ꢂ40°C  
−2.0  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
0.01  
0.1  
1.0  
I , REVERSE CURRENT (mA)  
10  
100  
125  
1.1  
V( , REVERSE VOLTAGE (V)  
BR)  
R
Figure 2. Reverse Characteristics  
Figure 3. Reverse Characteristics  
1.250  
1.240  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
I
R
= 100 mA  
T = −ꢂ40°C  
A
1.230  
1.220  
1.210  
+ꢂ25°C  
+ꢂ85°C  
−50  
−25  
0
25  
50  
75  
100  
0.01  
0.1  
1.0  
10  
100  
T , AMBIENT TEMPERATURE (°C)  
Aꢀ  
I , FORWARD CURRENT (mA)  
Fꢀ  
Figure 4. Forward Characteristics  
Figure 5. Temperature Drift  
875  
750  
625  
500  
375  
250  
125  
0
1.50  
1.25  
Input  
DUT  
100 k  
1.00  
0.75  
0.50  
0.25  
0
Output  
10  
5.0  
0
10  
100  
1.0ꢀK  
10ꢀK  
100ꢀk  
0
0.1 0.2 0.3  
0.6 0.7 0.8 0.9 1.0  
f, FREQUENCY (Hz)  
t, TIME (ms)  
Figure 6. Noise Voltage  
Figure 7. Response Time  
http://onsemi.com  
4
                          
LM285, LM385B  
TYPICAL PERFORMANCE CURVES FOR LM285−2.5/385−2.5/385B−2.5  
100  
10  
10  
8.0  
6.0  
T = +ꢂ85°C  
A
T = +ꢂ85°C  
A
+ꢂ25°C  
−ꢂ40°C  
4.0  
+
25°C  
1.0  
0.1  
2.0  
0
−ꢂ40°C  
−2.0  
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
0.01  
0.1  
1.0  
I , REVERSE CURRENT (mA)  
10  
100  
125  
1.1  
V( , REVERSE VOLTAGE (V)  
BR)  
R
Figure 8. Reverse Characteristics  
Figure 9. Reverse Characteristics  
2.520  
2.510  
2.500  
2.490  
2.480  
2.470  
2.460  
2.450  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
I
R
= 100 mA  
T = −ꢂ40°C  
A
+ꢂ85°C  
+ꢂ25°C  
−50  
−25  
0
25  
50  
75  
100  
0.01  
0.1  
1.0  
10  
100  
T , AMBIENT TEMPERATURE (°C)  
Aꢀ  
I , FORWARD CURRENT (mA)  
Fꢀ  
Figure 10. Forward Characteristics  
Figure 11. Temperature Drift  
3.00  
2.50  
Input  
DUT  
1500  
100 k  
2.00  
1.50  
1.00  
0.50  
0
1250  
1000  
750  
500  
250  
0
Output  
10  
5.0  
0
10  
100  
1.0ꢀK  
10ꢀK  
100ꢀk  
0
0.1 0.2 0.3  
0.6 0.7 0.8 0.9 1.0  
f, FREQUENCY (Hz)  
t, TIME (ms)  
Figure 12. Noise Voltage  
Figure 13. Response Time  
http://onsemi.com  
5
LM285, LM385B  
ORDERING INFORMATION  
Reverse Break−Down  
Voltage  
Device  
LM285Z−2.5  
LM285D−2.5  
LM285Z−1.2  
LM285Z−1.2G  
Operating Temperature Range  
T = −40°C to +85°C  
Package  
TO−92  
Shipping  
2.500 V  
2.500 V  
1.235 V  
1.235 V  
2000 Units / Bag  
98 Units / Rail  
A
T = −40°C to +85°C  
A
SOIC−8  
TO−92  
T = −40°C to +85°C  
A
2000 Units / Bag  
2000 Units / Bag  
T = −40°C to +85°C  
A
TO−92  
(Pb−Free)  
LM285D−1.2R2  
T = −40°C to +85°C  
1.235 V  
1.235 V  
SOIC−8  
2000 / Tape & Reel  
2000 / Tape & Reel  
A
LM285D−1.2R2G  
T = −40°C to +85°C  
A
SOIC−8  
(Pb−Free)  
LM285Z−2.5RA  
LM285Z−1.2RA  
LM285Z−2.5RP  
LM285D−1.2  
T = −40°C to +85°C  
2.500 V  
1.235 V  
2.500 V  
1.235 V  
2.500 V  
2.500 V  
TO−92  
TO−92  
TO−92  
SOIC−8  
SOIC−8  
2000 / Tape & Reel  
2500 / Tape & Reel  
2000 Units / Fan−Fold  
98 Units / Rail  
A
T = −40°C to +85°C  
A
T = −40°C to +85°C  
A
T = −40°C to +85°C  
A
LM285D−2.5R2  
LM285D−2.5R2G  
T = −40°C to +85°C  
A
2500 / Tape & Reel  
2500 / Tape & Reel  
T = −40°C to +85°C  
A
SOIC−8  
(Pb−Free)  
LM385BD−1.2  
T = 0°C to +70°C  
1.235 V  
1.235 V  
SOIC−8  
98 Units / Rail  
98 Units / Rail  
A
LM385BD−1.2G  
T = 0°C to +70°C  
A
SOIC−8  
(Pb−Free)  
LM385BD−1.2R2  
T = 0°C to +70°C  
1.235 V  
1.235 V  
SOIC−8  
2500 / Tape & Reel  
2500 / Tape & Reel  
A
LM385BD−1.2R2G  
T = 0°C to +70°C  
A
SOIC−8  
(Pb−Free)  
LM385BD−2.5  
LM385BD−2.5R2  
LM385BZ−1.2  
T = 0°C to +70°C  
2.500 V  
2.500 V  
1.235 V  
SOIC−8  
SOIC−8  
SOIC−8  
98 Units / Rail  
2500 / Tape & Reel  
98 Units / Rail  
A
T = 0°C to +70°C  
A
T = 0°C to +70°C  
A
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
http://onsemi.com  
6
LM285, LM385B  
PACKAGE DIMENSIONS  
TO−92 (TO−226)  
Z SUFFIX  
CASE 29−11  
ISSUE AL  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
3. CONTOUR OF PACKAGE BEYOND DIMENSION R  
IS UNCONTROLLED.  
A
B
R
4. LEAD DIMENSION IS UNCONTROLLED IN P AND  
BEYOND DIMENSION K MINIMUM.  
P
L
INCHES  
DIM MIN MAX  
MILLIMETERS  
MIN  
4.45  
4.32  
3.18  
0.407  
1.15  
2.42  
0.39  
12.70  
6.35  
2.04  
−−−  
MAX  
5.20  
5.33  
4.19  
0.533  
1.39  
2.66  
0.50  
−−−  
SEATING  
PLANE  
K
A
B
C
D
G
H
J
0.175  
0.170  
0.125  
0.016  
0.045  
0.095  
0.015  
0.500  
0.250  
0.080  
−−−  
0.205  
0.210  
0.165  
0.021  
0.055  
0.105  
0.020  
−−−  
D
X X  
G
K
L
J
H
V
−−−  
−−−  
N
P
R
V
0.105  
0.100  
−−−  
2.66  
2.54  
−−−  
C
0.115  
0.135  
2.93  
3.43  
SECTION X−X  
−−−  
−−−  
1
N
N
http://onsemi.com  
7
LM285, LM385B  
PACKAGE DIMENSIONS  
SOIC−8 NB  
CASE 751−07  
ISSUE AB  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER  
ANSI Y14.5M, 1982.  
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSION A AND B DO NOT INCLUDE  
MOLD PROTRUSION.  
−X−  
A
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)  
PER SIDE.  
8
5
4
5. DIMENSION D DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE DAMBAR  
PROTRUSION SHALL BE 0.127 (0.005) TOTAL  
IN EXCESS OF THE D DIMENSION AT  
MAXIMUM MATERIAL CONDITION.  
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW  
STANDARD IS 751−07.  
S
M
M
B
0.25 (0.010)  
Y
1
K
−Y−  
G
MILLIMETERS  
DIM MIN MAX  
INCHES  
MIN  
MAX  
0.197  
0.157  
0.069  
0.020  
A
B
C
D
G
H
J
K
M
N
S
4.80  
3.80  
1.35  
0.33  
5.00 0.189  
4.00 0.150  
1.75 0.053  
0.51 0.013  
C
N X 45  
_
SEATING  
PLANE  
−Z−  
1.27 BSC  
0.050 BSC  
0.10 (0.004)  
0.10  
0.19  
0.40  
0
0.25 0.004  
0.25 0.007  
1.27 0.016  
0.010  
0.010  
0.050  
8
0.020  
0.244  
M
J
H
D
8
0
_
_
_
_
0.25  
5.80  
0.50 0.010  
6.20 0.228  
M
S
S
X
0.25 (0.010)  
Z
Y
SOLDERING FOOTPRINT*  
1.52  
0.060  
7.0  
0.275  
4.0  
0.155  
0.6  
0.024  
1.270  
0.050  
mm  
inches  
ǒ
Ǔ
SCALE 6:1  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
SENSEFET is a trademark of Semiconductor Components Industries, LLC.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
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Order Literature: http://www.onsemi.com/litorder  
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For additional information, please contact your  
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LM285/D  

相关型号:

LM285D-2.5R2G

Micropower Voltage Reference Diodes
ONSEMI

LM285D1.2

Voltage Reference, 1.2V, BIPolar, PDSO8
MOTOROLA

LM285D2.5

Voltage Reference, 2.5V, BIPolar, PDSO8
MOTOROLA

LM285DE4-2-5

MICROPOWER VOLTAGE REFERENCES
TI

LM285DG4-1-2

具有 -40°C 至 +85°C 工作温度范围的 1.235V 微功耗基准电压 | D | 8 | -40 to 85
TI

LM285DG4-2-5

MICROPOWER VOLTAGE REFERENCES
TI

LM285DR-1-2

MICROPOWER VOLTAGE REFERENCES
TI

LM285DR-1.2

1-OUTPUT TWO TERM VOLTAGE REFERENCE, 1.235V, PDSO8
TI

LM285DR-2-5

MICROPOWER VOLTAGE REFERENCES
TI

LM285DR-2.5

Voltage Reference
ETC

LM285DRE4-1-2

具有 -40°C 至 +85°C 工作温度范围的 1.235V 微功耗基准电压 | D | 8 | -40 to 85
TI

LM285DRE4-2-5

MICROPOWER VOLTAGE REFERENCES
TI