LM4040ASD-330GT3 [ONSEMI]
IC 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 3.3 V, PDSO5, 1.25 X 2 MM, HALOGEN FREE AND ROHS COMPLIANT, MO-203, SC-70, SC-88A, 5 PIN, Voltage Reference;
| 型号： | LM4040ASD-330GT3 |
| 厂家： | 
ONSEMI |
| 描述： | IC 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 3.3 V, PDSO5, 1.25 X 2 MM, HALOGEN FREE AND ROHS COMPLIANT, MO-203, SC-70, SC-88A, 5 PIN, Voltage Reference 光电二极管 输出元件 |
| 文件： | 总14页 (文件大小：161K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LM4040, LM4041
Precision Micro-Power
Shunt Voltage References
Description
LM4040 and LM4041 are precision two−terminal shunt mode
voltage references offered in factory programmed reverse breakdown
voltages of 1.225 V, 2.500 V, 3.000 V, 3.300 V, 4.096 V, and 5.000 V.
ON Semiconductor’s Charge Programmable floating gate
technology ensures precise voltage settings offering five grades of
initial accuracy; from 0.1% to 2%.
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LM4040 and LM4041 operate over a shunt current range of 60 mA
to 15 mA with low dynamic impedance, and 100 ppm/°C temperature
coefficient ensuring stable reverse breakdown voltage accuracy over a
wide range of operating conditions.
SOT−23 3 Lead
TB SUFFIX
CASE 527AG
SC−70 5 Lead
SD SUFFIX
CASE 419AC
These shunt regulators do not require an external stabilizing
capacitor but are stable with any capacitive load (up to 1 mF).
Offered in space saving SOT−23 and SC−70 packages LM4040 and
LM4041 are specified for operation over the full industrial
temperature range of −40°C to +85°C.
MARKING DIAGRAMS
4xA
4xYM
G
G
Features
• Reverse Breakdown Voltages:
4x
= Specific Device Code
♦ 1.225 V
♦ 2.500 V
♦ 3.000 V
♦ 3.300 V
♦ 4.096 V
♦ 5.000 V
= (4L = LM4040, 4M = LM4041)
= Assembly Location Code
= Production Year
= Production Month
= Pb−Free Package
A
Y
M
G
• Accuracy Grades:
♦ A: 0.1%
♦ D: 1.0%
♦ E: 2.0%
♦ B: 0.2%
♦ C: 0.5%
PIN CONNECTIONS
• Operating Current: 60 mA to 15 mA
• Low Output Noise: 35 mV
(10 Hz to 10 KHz)
1
2
5
4
1
3
2
3
• Small Package Size: SOT−23, SC−70
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
(SOT−23)
(SC−70)
Typical Applications
• Mobile Handheld Devices
• Industrial Process Control
• Instrumentation
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 11 of this data sheet.
• Laptop and Desktop PCs
• Automotive
• Energy Management
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
July, 2013 − Rev. 4
LM4040/D
LM4040, LM4041
R
S
V
R
V
IN
LM4040
LM4041
Figure 1. Test Circuit
Table 1. PIN DESCRIPTIONS
Pin
SOT−23
SC−70
Name
V+
Function
1
2
3
3
1
2
4
5
Positive voltage
Negative voltage
V−
NC
This pin must be left floating or connected to V−.
NIC
NIC
No Internal Connection. A voltage or signal applied to this pin will have no effect.
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameter
Rating
20
Unit
Reverse Current
mA
mA
°C
Forward Current
10
Junction Temperature
150
300
240
Power Dissipation
Power Dissipation
SOT−23−3
SC−70−5
mW
mW
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 3. RECOMMENDED OPERATING CONDITIONS
Parameter
Rating
0.06 − 15
−40 to +85
Unit
mA
°C
I
REVERSE
Ambient Temperature Range
Table 4. ESD SUSCEPTABILITY
Symbol
Parameter
Min
2000
200
Units
ESD
Human Body Model
Machine Model
V
V
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2
LM4040, LM4041
Table 5. DC ELECTRICAL CHARACTERISTICS
(I = 100 mA, T = −40°C to +85°C, unless otherwise noted. Typical values are at T = +25°C.)
R
A
A
Limits
Typ
Min
Max
Symbol
1.225 V
Parameter
Test Conditions
Units
V
Reverse Breakdown Voltage
T = +25°C
LM4041A (0.1%)
LM4041B (0.2%)
LM4041C (0.5%)
LM4041D (1.0%)
LM4041E (2.0%)
1.2238
1.2226
1.219
1.213
1.200
1.225
1.225
1.225
1.225
1.225
1.2
2.4
6
1.2262
1.2274
1.231
1.237
1.250
9.2
V
R
A
V
R
Reverse Breakdown Voltage
Tolerance
LM4041A
LM4041B
LM4041C
LM4041D
LM4041E
mV
10.4
14
12
24
25
36
I
Minimum Operating Current
45
65
mA
R_MIN
DV /DT
Reverse Breakdown Voltage
Temperature Coefficient
I
I
= 10 mA
= 1 mA
20
ppm/°C
R
R
LM4041A, B, C
LM4041D, E
15
100
150
R
15
I
I
= 100 mA
15
R
DV /DI
Reverse Breakdown Voltage
Change with Operating Current
≤ I ≤
R
LM4041A, B, C
LM4041D, E
LM4041A, B, C
LM4041D, E
LM4041A, B
LM4041C
0.7
0.7
2.5
2.5
0.5
0.5
0.5
200
120
2.0
2.5
8
mV
R
R
R_MIN
1 mA
1 mA ≤ I
15 mA
≤
R
10
Z
Reverse Dynamic Impedance
Wideband Noise
I
R
= 1 mA,
1.5
1.5
2.0
W
R
f = 120 Hz,
I
= 0.1 I
AC
R
LM4041D, E
e
N
I
R
= 100 mA, 10 Hz ≤ f ≤ 10 KHz
mV
RMS
DV
Reverse Breakdown Voltage
Long Term Stability
T = 1000 h
ppm
R
V
Thermal Hysteresis (Note 2)
DT = −40°C to +125°C
0.08
%
V
HYST
2.500 V
V
R
Reverse Breakdown Voltage
T = +25°C
A
LM4040A (0.1%)
LM4040B (0.2%)
LM4040C (0.5%)
LM4040D (1.0%)
LM4040E (2.0%)
2.498
2.496
2.490
2.475
2.450
2.500
2.500
2.500
2.500
2.500
2
2.502
2.504
2.510
2.525
2.550
19
V
R
Reverse Breakdown Voltage
Tolerance
LM4040A
LM4040B
LM4040C
LM4040D
LM4040E
mV
4
21
10
29
25
49
50
74
1. Guaranteed by design.
2. Thermal hysteresis is defined as the difference in voltage measured at +25°C after cycling to temperature −40°C and the 25°C measure-
ment after cycling to temperature +125°C.
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3
LM4040, LM4041
Table 5. DC ELECTRICAL CHARACTERISTICS
(I = 100 mA, T = −40°C to +85°C, unless otherwise noted. Typical values are at T = +25°C.)
R
A
A
Limits
Typ
Min
Max
Symbol
2.500 V
Parameter
Test Conditions
Units
I
Minimum Operating Current
45
20
65
mA
R_MIN
DV /DT
Reverse Breakdown Voltage
Temperature Coefficient
I
I
= 10 mA
= 1 mA
ppm/°C
R
R
LM4040A, B, C
LM4040D, E
15
100
150
R
15
I
I
= 100 mA
15
R
DV /DI
Reverse Breakdown Voltage
Change with Operating Current
≤ I ≤
R
LM4040A, B, C
LM4040D, E
LM4040A, B, C
LM4040D, E
LM4040A, B
LM4040C
0.3
0.3
2.5
2.5
0.3
0.3
0.3
350
120
1.0
1.2
8
mV
R
R
R_MIN
1 mA
1 mA ≤ I
15 mA
≤
R
10
Z
Reverse Dynamic Impedance
Wideband Noise
I
R
= 1 mA,
0.8
0.9
1.1
W
R
f = 120 Hz,
I
= 0.1 I
AC
R
LM4040D, E
e
N
I
R
= 100 mA, 10 Hz ≤ f ≤ 10 KHz
mV
RMS
DV
Reverse Breakdown Voltage
Long Term Stability
T = 1000 h
ppm
R
V
Thermal Hysteresis (Note 2)
DT = −40°C to +125°C
0.08
%
V
HYST
3.000 V
V
R
Reverse Breakdown Voltage
T = +25°C
A
LM4040A (0.1%)
LM4040B (0.2%)
LM4040C (0.5%)
LM4040D (1.0%)
LM4040E (2.0%)
2.997
2.994
2.985
2.970
2.940
3.000
3.000
3.000
3.000
3.000
3
3.003
3.006
3.015
3.030
3.060
22
V
R
Reverse Breakdown Voltage
Tolerance
LM4040A
LM4040B
LM4040C
LM4040D
LM4040E
mV
6
26
15
34
30
59
60
89
I
Minimum Operating Current
45
65
mA
R_MIN
DV /DT
Reverse Breakdown Voltage
Temperature Coefficient
I
I
= 10 mA
= 1 mA
20
ppm/°C
R
R
LM4040A, B, C
LM4040D, E
15
100
150
R
15
I
I
= 100 uA
15
R
DV /DI
Reverse Breakdown Voltage
Change with Operating Current
≤ I
R
≤
LM4040A, B, C
LM4040D, E
0.4
0.4
2.7
2.7
1.1
1.3
9
mV
R
R
R_MIN
1 mA
1mA ≤ I
15 mA
≤
LM4040A, B, C
LM4040D, E
R
11
1. Guaranteed by design.
2. Thermal hysteresis is defined as the difference in voltage measured at +25°C after cycling to temperature −40°C and the 25°C measure-
ment after cycling to temperature +125°C.
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LM4040, LM4041
Table 5. DC ELECTRICAL CHARACTERISTICS
(I = 100 mA, T = −40°C to +85°C, unless otherwise noted. Typical values are at T = +25°C.)
R
A
A
Limits
Typ
Min
Max
Symbol
3.000 V
Parameter
Test Conditions
Units
Z
Reverse Dynamic Impedance
I
= 1 mA,
LM4040A, B
0.4
0.4
0.4
350
120
0.9
0.9
1.2
W
R
R
f = 120 Hz,
LM4040C
I
= 0.1 I
AC
R
LM4040D, E
e
N
Wideband Noise
I
R
= 100 mA, 10 Hz ≤ f ≤ 10 KHz
mV
RMS
DV
Reverse Breakdown Voltage
Long Term Stability
T = 1000 h
ppm
R
V
Thermal Hysteresis (Note 2)
Reverse Breakdown Voltage
Reverse Breakdown Voltage
DT = −40°C to +125°C
0.08
%
V
HYST
3.300 V
V
R
V
R
V
R
T = +25°C
LM4040A (0.1%)
LM4040B (0.2%)
LM4040C (0.5%)
LM4040D (1.0%)
3.297
3.294
3.285
3.270
3.300
3.300
3.300
3.300
3
3.303
3.306
3.315
3.330
22
A
T = +25°C
A
V
Reverse Breakdown Voltage
Tolerance
LM4040A
LM4040B
LM4040C
LM4040D
mV
6
26
15
34
30
59
I
Minimum Operating Current
45
65
mA
R_MIN
DV /DT
Reverse Breakdown Voltage
Temperature Coefficient
I
I
= 10 mA
= 1 mA
20
ppm/°C
R
R
LM4040A, B, C
LM4040D
15
100
150
R
15
I
I
= 100 mA
15
R
DV /DI
Reverse Breakdown Voltage
Change with Operating Current
≤ I ≤
R
LM4040A, B, C
LM4040D
0.3
0.3
2.5
2.5
0.3
0.3
0.3
350
120
1.0
1.2
8
mV
R
R
R_MIN
1 mA
1 mA ≤ I
15 mA
≤
LM4040A, B, C
LM4040D
R
10
Z
Reverse Dynamic Impedance
Wideband Noise
I
R
= 1 mA,
LM4040A, B
LM4040C
0.8
0.9
1.1
W
R
f = 120 Hz,
I
= 0.1 I
AC
R
LM4040D
e
N
I
R
= 100 mA, 10 Hz ≤ f ≤ 10 KHz
mV
RMS
DV
Reverse Breakdown Voltage
Long Term Stability
T = 1000 h
ppm
R
V
Thermal Hysteresis (Note 2)
DT = −40°C to +125°C
0.08
%
V
HYST
4.096 V
V
R
Reverse Breakdown Voltage
T = +25°C
LM4040A (0.1%)
LM4040B (0.2%)
LM4040C (0.5%)
LM4040D (1.0%)
4.092
4.088
4.080
4.055
4.096
4.096
4.096
4.096
4.100
4.104
4.120
4.137
A
1. Guaranteed by design.
2. Thermal hysteresis is defined as the difference in voltage measured at +25°C after cycling to temperature −40°C and the 25°C measure-
ment after cycling to temperature +125°C.
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LM4040, LM4041
Table 5. DC ELECTRICAL CHARACTERISTICS
(I = 100 mA, T = −40°C to +85°C, unless otherwise noted. Typical values are at T = +25°C.)
R
A
A
Limits
Typ
Min
Max
Symbol
4.096 V
Parameter
Test Conditions
Units
V
Reverse Breakdown Voltage
Tolerance
LM4040A
4
8
31
35
47
80
65
mV
R
LM4040B
LM4040C
LM4040D
20
41
I
Minimum Operating Current
45
mA
R_MIN
DV /DT
Reverse Breakdown Voltage
Temperature Coefficient
I
I
= 10 mA
= 1 mA
30
ppm/°C
R
R
LM4040A, B, C
LM4040D
20
100
150
R
20
I
I
= 100 mA
15
R
DV /DI
Reverse Breakdown Voltage
Change with Operating Current
≤ I ≤
R
LM4040A, B, C
LM4040D
0.5
0.5
3.0
3.0
0.5
0.5
0.5
800
120
1.2
1.5
10
mV
R
R
R_MIN
1 mA
1 mA ≤ I
15 mA
≤
LM4040A, B, C
LM4040D
R
13
Z
Reverse Dynamic Impedance
Wideband Noise
I
R
= 1 mA,
LM4040A, B
LM4040C
1.0
1.0
1.3
W
R
f = 120 Hz,
I
= 0.1 I
AC
R
LM4040D
e
N
I
R
= 100 mA, 10 Hz ≤ f ≤ 10 KHz
mV
RMS
DV
Reverse Breakdown Voltage
Long Term Stability
T = 1000 h
ppm
R
V
Thermal Hysteresis (Note 2)
DT = −40°C to +125°C
0.08
%
V
HYST
5.000 V
V
Reverse Breakdown Voltage
T = +25°C
A
LM4040A (0.1%)
LM4040B (0.2%)
LM4040C (0.5%)
LM4040D (1.0%)
4.995
4.990
4.975
4.950
5.000
5.000
5.000
5.000
5
5.005
5.010
5.025
5.050
38
R
R
V
Reverse Breakdown Voltage
Tolerance
LM4040A
LM4040B
LM4040C
LM4040D
mV
10
43
25
58
50
99
I
Minimum Operating Current
45
65
mA
R_MIN
DV /DT
Reverse Breakdown Voltage
Temperature Coefficient
I
I
= 10 mA
= 1 mA
30
ppm/°C
R
R
LM4040A, B, C
LM4040D
20
100
150
R
20
I
R
= 100 mA
15
1. Guaranteed by design.
2. Thermal hysteresis is defined as the difference in voltage measured at +25°C after cycling to temperature −40°C and the 25°C measure-
ment after cycling to temperature +125°C.
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LM4040, LM4041
Table 5. DC ELECTRICAL CHARACTERISTICS
(I = 100 mA, T = −40°C to +85°C, unless otherwise noted. Typical values are at T = +25°C.)
R
A
A
Limits
Typ
Min
Max
Symbol
5.000 V
Parameter
Test Conditions
Units
DV /DI
Reverse Breakdown Voltage
Change with Operating Current
I
≤ I ≤
R
LM4040A, B, C
LM4040D
0.5
05
1.4
1.8
12
mV
R
R
R_MIN
1 mA
1 mA ≤ I
15 mA
≤
LM4040A, B, C
LM4040D
3.5
3.5
0.5
0.5
0.5
800
120
R
15
Z
R
Reverse Dynamic Impedance
Wideband Noise
I
R
= 1 mA,
LM4040A, B
LM4040C
1.1
1.1
1.5
W
f = 120 Hz,
I
= 0.1 I
AC
R
LM4040D
e
N
I
R
= 100 mA, 10 Hz ≤ f ≤ 10 KHz
mV
RMS
DV
Reverse Breakdown Voltage
Long Term Stability
T = 1000 h
ppm
R
V
HYST
Thermal Hysteresis (Note 2)
DT = −40°C to +125°C
0.08
%
1. Guaranteed by design.
2. Thermal hysteresis is defined as the difference in voltage measured at +25°C after cycling to temperature −40°C and the 25°C measure-
ment after cycling to temperature +125°C.
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LM4040, LM4041
TYPICAL PERFORMANCE CHARACTERISTICS
10
5
5
0
0
6
3
2
1
0
4
2
0
0
10
20
30
40
0
20
40
60
80
RESPONSE TIME (ms)
RESPONSE TIME (ms)
Figure 2. LM4040 − 2.5 V (RS = 30 k)
Figure 3. LM4040 − 5 V (RS = 30 k)
5
0
1.5
1.0
0.5
0
0
10
20
30
40
RESPONSE TIME (ms)
Figure 4. LM4041 − 1.225 V (RS = 30 k)
100
80
100
80
60
60
40
40
+85°C
−40°C
+85°C
+25°C
+25°C
20
0
20
0
−40°C
0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
2
3
4
5
6
REVERSE VOLTAGE (V)
REVERSE VOLTAGE (V)
Figure 5. Reverse Characteristics
Figure 6. Reverse Characteristics
(LM4040 − 2.5 V)
(LM4040 − 5 V)
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LM4040, LM4041
TYPICAL PERFORMANCE CHARACTERISTICS
0.3
0.2
0.4
I
R
= 150 mA
0.3
0.2
I = 150 mA
R
+48 ppm/°C
+35 ppm/°C
−20 ppm/°C
0.1
0.1
0
0
−0.1
−0.2
−0.3
−0.1
−0.2
−0.3
−29 ppm/°C
−0.4
−0.5
−0.4
−0.5
−40
−20
0
20
40
60
80
100
−40
−20
0
20
40
60
80
100
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 7. Temperature Drift − LM4040
Figure 8. Temperature Drift − LM4041
1.E+03
1.E+02
1.E+03
1.E+02
I
= 150 mA
R
I
= 1 mA
R
T = 25°C,
DI = 0.1I
J
T = 25°C,
DI = 0.1I
J
R
R
R
R
C = 0 mF
L
C = 0 mF
L
LM4041 − 1.225 V
LM4041 − 1.225 V
1.E+01
1.E+01
LM4040 − 5 V
1.E+00
1.E+00
LM4040 − 5 V
C = 1 mF
L
C = 1 mF
L
LM4040 − 2.5 V
LM4040 − 2.5 V
1.E+04
1.E−01
1.E−01
1.E+02
1.E+03
1.E+04
1.E+05
1.E+06
1.E+02
1.E+03
1.E+05
1.E+06
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 9. Output Impedance vs. Frequency
Figure 10. Output Impedance vs. Frequency
100
80
60
40
+85°C
+25°C
20
−40°C
0
0
0.4
0.8
1.2
1.6
2.0
REVERSE VOLTAGE (V)
Figure 11. Reverse Characteristics − LM4041
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LM4040, LM4041
RS
Device Description
V
R
VS
I
LOAD
The LM404x shunt references use ON Semiconductor’s
floating gate (EEPROM) technology to produce a capacitor
which stores an accurate and stable voltage that is used as the
reference voltage for a control amplifier and shunt
N−channel FET.
I
SHUNT
Figure 13. Typical Operating Circuit
+
To select a value of RS, set VS at its minimum value and
I
at its maximum. Be sure to maintain a minimum
LOAD
operating current of 60 mA through LM404x at all times, as
LM404x uses this current to power its internal circuitry. The
+
RS value should be large enough to keep I
less than
SHUNT
15 mA for proper regulation when VS is maximum and
is at a minimum. Therefore, the value of RS is
bounded by the following equation:
−
I
LOAD
V
REF
+
ǒV
Ǔ
S(min) * VR
Ǔ u RS
−
ǒ60 mA ) I
LOAD(max)
Figure 12. Functional Block Diagram
and
ǒV
Ǔ
S(max) * VR
The device operates like a zener diode; maintaining a
fixed voltage across its output terminals when biased with
60 mA to 15 mA of reverse current. The LM404x will also
act like a silicon diode when forward biased with currents up
to 10 mA.
RS u
ǒ
Ǔ
15 mA ) ILOAD(min)
Choosing a larger resistance minimizes the power
dissipated in the circuit by reducing the shunt current.
Output Capacitance
Applications Information
The LM404x does not require an external capacitor for
frequency stability and is stable for any output capacitance.
The LM404x’s internal pass transistor maintains a
constant output voltage by sinking the necessary amount of
current across a source resistor. The source resistance (RS)
Effect of Temperature
is set by the load current range (I
), supply voltage (VS)
LOAD
LM404x has an output voltage temperature coefficient of
typically 15 to 30 ppm/°C meaning the LM404x’s output
voltage will change by 50 – 100 mV/°C for a 3.300 V
regulator. The polarity of this temperature induced voltage
shift can vary from device to device, some moving in the
positive direction and others in the negative direction.
variations, LM404x’s terminal voltage (VR), and desired
quiescent current.
http://onsemi.com
10
LM4040, LM4041
Table 6. ORDERING INFORMATION
Specific
Device
Marking
Package
(Note 3)
Part Number
Voltage
Accuracy
0.1%
0.2%
0.5%
1.0%,
2.0%,
0.1%
0.2%
0.5%
1.0%,
2.0%,
0.1%
0.2%
0.5%
1.0%,
2.0%,
0.1%
0.2%
0.5%
1.0%,
2.0%,
0.1%
0.2%
0.5%
1.0%,
2.0%,
0.1%
0.2%
0.5%
1.0%,
2.0%,
Max Drift
Temperature Range
LM4041ATB−122GT3*
LM4041BTB−122GT3
LM4041CTB−122GT3
LM4041DTB−122GT3
LM4041ETB−122GT3
LM4040ATB−250GT3*
LM4040BTB−250GT3
LM4040CTB−250GT3
LM4040DTB−250GT3
LM4040ETB−250GT3*
LM4040ATB−300GT3*
LM4040BTB−300GT3
LM4040CTB−300GT3
LM4040DTB−300GT3
LM4040ETB−300GT3*
LM4040ATB−330GT3*
LM4040BTB−330GT3
LM4040CTB−330GT3
LM4040DTB−330GT3
LM4040ETB−330GT3*
LM4040ATB−409GT3*
LM4040BTB−409GT3
LM4040CTB−409GT3
LM4040DTB−409GT3
LM4040ETB−409GT3*
LM4040ATB−500GT3
LM4040BTB−500GT3
LM4040CTB−500GT3
LM4040DTB−500GT3
LM4040ETB−500GT3*
*Consult Sales.
100 ppm/°C
150 ppm/°C
100 ppm/°C
150 ppm/°C
100 ppm/°C
150 ppm/°C
100 ppm/°C
150 ppm/°C
100 ppm/°C
150 ppm/°C
100 ppm/°C
150 ppm/°C
4M
1.225 V
2.500 V
3.000 V
3.300 V
4.096 V
5.000 V
−40°C to 85°C
SOT−23−3
4L
3. Tape & Reel, 3,000 Units / Reel
4. All packages are RoHS−compliant (Lead−free, Halogen−free).
5. The standard lead finish is NiPdAu.
6. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
7. For detailed information and a breakdown of device nomenclature and numbering systems, please see the ON Semiconductor Device
Nomenclature document, TND310/D, available at www.onsemi.com
http://onsemi.com
11
LM4040, LM4041
Table 6. ORDERING INFORMATION
Specific
Device
Marking
Package
(Note 3)
Part Number
Voltage
Accuracy
0.1%
0.2%
0.5%
1.0%,
2.0%,
0.1%
0.2%
0.5%
1.0%,
2.0%,
0.1%
0.2%
0.5%
1.0%,
2.0%,
0.1%
0.2%
0.5%
1.0%,
2.0%,
0.1%
0.2%
0.5%
1.0%,
2.0%,
0.1%
0.2%
0.5%
1.0%,
2.0%,
Max Drift
Temperature Range
LM4041ASD−122GT3*
LM4041BSD−122GT3
LM4041CSD−122GT3
LM4041DSD−122GT3
LM4041ESD−122GT3*
LM4040ASD−250GT3*
LM4040BSD−250GT3
LM4040CSD−250GT3
LM4040DSD−250GT3
LM4040ESD−250GT3*
LM4040ASD−300GT3*
LM4040BSD−300GT3
LM4040CSD−300GT3
LM4040DSD−300GT3
LM4040ESD−300GT3*
LM4040ASD−330GT3*
LM4040BSD−330GT3
LM4040CSD−330GT3
LM4040DSD−330GT3
LM4040ESD−330GT3*
LM4040ASD−409GT3*
LM4040BSD−409GT3
LM4040CSD−409GT3
LM4040DSD−409GT3
LM4040ESD−409GT3*
LM4040ASD−500GT3*
LM4040BSD−500GT3
LM4040CSD−500GT3
LM4040DSD−500GT3
LM4040ESD−500GT3*
*Consult Sales.
100 ppm/°C
150 ppm/°C
100 ppm/°C
150 ppm/°C
100 ppm/°C
150 ppm/°C
100 ppm/°C
150 ppm/°C
100 ppm/°C
150 ppm/°C
100 ppm/°C
150 ppm/°C
4M
1.225 V
2.500 V
3.000 V
3.300 V
4.096 V
5.000 V
−40°C to 85°C
SC−70−5
4L
3. Tape & Reel, 3,000 Units / Reel
4. All packages are RoHS−compliant (Lead−free, Halogen−free).
5. The standard lead finish is NiPdAu.
6. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
7. For detailed information and a breakdown of device nomenclature and numbering systems, please see the ON Semiconductor Device
Nomenclature document, TND310/D, available at www.onsemi.com
http://onsemi.com
12
LM4040, LM4041
PACKAGE DIMENSIONS
SOT−23, 3 Lead
CASE 527AG
ISSUE O
SYMBOL
MIN
NOM
MAX
D
A
A1
b
0.89
0.013
0.37
1.12
0.10
0.50
0.18
3.04
2.64
1.40
3
c
0.085
2.80
D
E1
E
E
2.10
E1
e
1.20
0.95 BSC
1.90 BSC
0.40 REF
1
2
e1
L
e
e1
L1
0.54 REF
0º
8º
θ
TOP VIEW
A
q
b
L1
L
c
A1
SIDE VIEW
END VIEW
Notes:
(1) All dimensions are in millimeters. Angles in degrees.
(2) Complies with JEDEC TO-236.
http://onsemi.com
13
LM4040, LM4041
PACKAGE DIMENSIONS
SC−88A (SC−70 5 Lead), 1.25x2
CASE 419AC
ISSUE A
SYMBOL
MIN
NOM
MAX
D
0.80
A
1.10
e
e
A1
A2
0.00
0.80
0.10
1.00
b
c
0.15
0.10
1.80
1.80
1.15
0.30
0.18
2.20
2.40
1.35
D
2.00
2.10
E1
E
E
E1
e
1.25
0.65 BSC
0.36
L
0.26
0.46
L1
L2
0.42 REF
0.15 BSC
TOP VIEW
0º
4º
8º
θ
10º
θ1
q1
A2
A1
A
q
L
b
L1
q1
c
L2
SIDE VIEW
END VIEW
Notes:
(1) All dimensions are in millimeters. Angles in degrees.
(2) Complies with JEDEC MO-203.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
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limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
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any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
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LM4040/D
相关型号：
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