LMV321SQ3T2G [ONSEMI]
Single, Dual, Quad Low-Voltage, Rail-to-Rail Operational Amplifiers; 单，双，四通道低电压轨至轨运算放大器
| 型号： | LMV321SQ3T2G |
| 厂家： | 
ONSEMI |
| 描述： | Single, Dual, Quad Low-Voltage, Rail-to-Rail Operational Amplifiers |
| 文件： | 总20页 (文件大小：242K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LMV321, LMV358, LMV324
Single, Dual, Quad
Low-Voltage, Rail-to-Rail
Operational Amplifiers
The LMV321, LMV358, and LMV324 are CMOS single, dual, and
quad low voltage operational amplifiers with rail−to−rail output
swing. These amplifiers are a cost−effective solution for applications
where low power consumption and space saving packages are critical.
Specification tables are provided for operation from power supply
voltages at 2.7 V and 5 V. Rail−to−Rail operation provides improved
signal−to−noisepreformance. Ultra low quiescent current makes this
series of amplifiers ideal for portable, battery operated equipment. The
common mode input range includes ground making the device useful
for low−side current−shunt measurements. The ultra small packages
allow for placement on the PCB in close proximity to the signal source
thereby reducing noise pickup.
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5
1
1
SC−70
TSOP−5
CASE 419A
CASE 483
1
Micro8]
CASE 846A
Features
8
8
• Operation from 2.7 V to 5.0 V Single−Sided Power Supply
• LMV321 Single Available in Ultra Small 5 Pin SC70 Package
• No Output Crossover Distortion
• Industrial temperature Range: −40°C to +85°C
• Rail−to−Rail Output
1
1
UDFN8
CASE 517AJ
SOIC−8
CASE 751
• Low Quiescent Current: LMV358 Dual − 220 mA, Max per Channel
• No Output Phase−Reversal from Overdriven Input
• These are Pb−Free Devices
1
1
SOIC−14
CASE 751A
TSSOP−14
CASE 948G
Typical Applications
• Notebook Computers and PDA’s
• Portable Battery−Operated Instruments
• Active Filters
ORDERING AND MARKING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 12 of this data sheet.
120
100
80
80
70
60
50
40
30
V
S
= 5 V
60
40
20
Over −40°C to +85°C
Same Gain $1.8 dB (Typ)
0
−20
−1
0
1
2
3
4
5
10
100
1k
10k
100k
1M
10M
INPUT COMMON MODE VOLTAGE (V)
FREQUENCY (Hz)
Figure 1. Open Loop Frequency Response
Figure 2. CMRR vs. Input Common Mode
Voltage
(RL = 2 kW, TA = 255C, VS = 5 V)
© Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
August, 2009 − Rev. 8
LMV321/D
LMV321, LMV358, LMV324
MARKING DIAGRAMS
SC−70
TSOP−5
Micro8
8
1
5
V358
AYWG
G
3ACAYWG
AAC MG
G
G
1
AAC
M
= Specific Device Code
= Date Code
= Pb−Free Package
3AC = Specific Device Code
V358
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
A
Y
W
G
= Assembly Location
= Year
= Work Week
A
Y
W
G
G
(Note: Microdot may be in either location)
= Pb−Free Package
(Note: Microdot may be in either location)
(Note: Microdot may be in either location)
SOIC−8
UDFN8
8
V358
ALYWX
AC M
G
G
1
V358 = Specific Device Code
AC = Specific Device Code
A
L
Y
W
G
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
M
G
= Date Code
= Pb−Free Package
SOIC−14
TSSOP−14
14
14
LMV
324
ALYW
LMV324
AWLYWWG
1
1
LMV324 = Specific Device Code
LMV324 = Specific Device Code
A
WL
Y
WW
G
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
A
L
Y
W
G
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
PIN CONNECTIONS
SC70−5/TSOP−5
UDFN8/Micro8/SOIC−8
SOIC−14
TSSOP−14
OUT A
IN A−
IN A+
V+
1
2
3
4
5
6
7
14 OUT D OUT A
1
2
3
4
5
6
7
14 OUT D
OUT A
V+
1
2
3
5
1
8
A
D
A
D
13 IN D−
13 IN D−
IN A−
IN A+
V+
+
− +
+
−
− +
+ −
V
+IN
A
12
11
10
9
12
11
10
9
IN D+
V−
IN D+
V−
− +
IN A−
OUT B
2
3
7
6
+
−
−
V
IN A+
IN B−
4
IN C+
IN C−
OUT C
IN C+
IN C−
OUT C
IN B+
IN B−
OUT B
IN B+
IN B−
OUT B
B
−IN
OUTPUT
+
−
− +
−
+
+
−
+
−
V−
IN B+
4
5
B
C
B
C
8
8
(Top View)
(Top View)
(Top View)
(Top View)
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2
LMV321, LMV358, LMV324
MAXIMUM RATINGS
Symbol
Rating
Value
5.5
Unit
V
V
S
Supply Voltage (Operating Range V = 2.7 V to 5.5 V)
S
V
IDR
V
ICR
Input Differential Voltage
$Supply Voltage
−0.5 to (V+) + 0.5
10
V
Input Common Mode Voltage Range
V
Maximum Input Current
mA
t
Output Short Circuit (Note 1)
Continuous
150
So
T
Maximum Junction Temperature (Operating Range −40°C to 85°C)
°C
J
q
Thermal Resistance:
°C/W
JA
SC−70
280
238
Micro8
TSOP−5
333
UDFN8 (1.2 mm x 1.8 mm x 0.5 mm)
350
SOIC−8
212
SOIC−14
156
TSSOP−14
190
T
Storage Temperature
−65 to 150
235
°C
°C
V
stg
Mounting Temperature (Infrared or Convection −20 sec)
V
ESD
ESD Tolerance
LMV321
Machine Model
Human Body Model
LMV358/324
100
1000
Machine Model
Human Body Mode
100
2000
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may
affect device reliability.
1. Continuous short−circuit operation to ground at elevated ambient temperature can result in exceeding the maximum allowed junction
temperature of 150°C. Output currents in excess of 45 mA over long term may adversely affect reliability. Shorting output to either V+
or V− will adversely affect reliability.
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3
LMV321, LMV358, LMV324
+
2.7 V DC ELECTRICAL CHARACTERISTICS (Unless otherwise specified, all limits are guaranteed for T = 25°C, V = 2.7 V,
A
−
R = 1 MW, V = 0 V, V = V+/2)
L
O
Parameter
Symbol
Condition
Min
Typ
1.7
5
Max
Unit
mV
mV/°C
nA
Input Offset Voltage
V
IO
T = −40°C to +85°C
9
A
Input Offset Voltage Average Drift
Input Bias Current
ICV
T = −40°C to +85°C
OS
A
I
B
T = −40°C to +85°C
<1
<1
63
60
A
Input Offset Current
I
IO
T = −40°C to +85°C
nA
A
Common Mode Rejection Ratio
Power Supply Rejection Ratio
CMRR
PSRR
0 V v V
v 1.7 V
50
50
dB
CM
2.7 V v V+ v 5 V,
= 1 V
dB
V
O
Input Common−Mode Voltage Range
V
V
For CMRR w 50 dB
R = 10 kW to 1.35 V
0 to 1.7
−0.2 to 1.9
V
CM
Output Swing
V
CC
− 100
V − 10
CC
mV
mV
mA
OH
L
V
R = 10 kW to 1.35 V (Note 2)
60
180
OL
CC
L
Supply Current
LMV321
I
80
140
260
185
340
680
LMV358 (Both Amplifiers)
LMV324 (4 Amplifiers)
+
2.7 V AC ELECTRICAL CHARACTERISTICS (Unless otherwise specified, all limits are guaranteed for T = 25°C, V = 2.7 V,
A
−
R = 1 MW, V = 0 V, V = V+/2)
L
O
Parameter
Symbol
Condition
Min
Typ
1
Max
Unit
MHz
°
Gain Bandwidth Product
Phase Margin
GBWP
C = 200 pF
L
Q
m
G
m
e
n
60
10
50
Gain Margin
dB
Input−Referred Voltage Noise
f = 50 kHz
nV/√Hz
2. Guaranteed by design and/or characterization.
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4
LMV321, LMV358, LMV324
+
5.0 V DC ELECTRICAL CHARACTERISTICS (Unless otherwise specified, all limits are guaranteed for T = 25°C, V = 5.0 V,
A
−
R = 1 MW, V = 0 V, V = V+/2)
L
O
Parameter
Symbol
Condition
Min
Typ
1.7
5
Max
Unit
mV
Input Offset Voltage
V
IO
T = −40°C to +85°C
9
A
Input Offset Voltage Average Drift
Input Bias Current (Note 3)
T V
T = −40°C to +85°C
mV/°C
nA
C
IO
A
I
B
< 1
T = −40°C to +85°C
A
Input Offset Current (Note 3)
Common Mode Rejection Ratio
Power Supply Rejection Ratio
I
T = −40°C to +85°C
< 1
65
60
nA
dB
dB
IO
A
CMRR
PSRR
0 V v V
v 4 V
50
50
CM
2.7 V v V+ v 5 V,
= 1 V, V = 1 V
V
O
CM
Input Common−Mode Voltage Range
V
For CMRR w 50 dB
0 to 4
15
−0.2 to 4.2
V
CM
Large Signal Voltage Gain (Note 3)
A
100
V/mV
R = 2 kW
L
V
T = −40°C to +85°C
A
10
Output Swing
V
OH
V
CC
V
CC
− 300
− 400
V − 40
CC
V
R = 2 kW to 2.5 V
A
L
T = −40°C to +85°C
V
R = 2 kW to 2.5 V (Note 3)
120
300
400
mV
V
OL
L
T = −40°C to +85°C
A
V
OH
R = 10 kW to 2.5 V (Note 3)
V
CC
V
CC
− 100
− 200
L
T = −40°C to +85°C
A
V
I
R = 10 kW to 2.5 V
A
65
180
280
mV
mA
mA
OL
O
L
T = −40°C to +85°C
Output Short Circuit Current
Supply Current
Sourcing = V = 0 V (Note 3)
10
10
60
160
O
Sinking = V = 5 V (Note 3)
O
I
LMV321
130
210
410
250
350
CC
T = −40°C to +85°C
A
LMV358 Both Amplifiers
440
615
T = −40°C to +85°C
A
LMV324 All Four Amplifiers
830
1160
T = −40°C to +85°C
A
+
5.0 V AC ELECTRICAL CHARACTERISTICS (Unless otherwise specified, all limits are guaranteed for T = 25°C, V = 5.0 V,
A
−
R = 1 MW, V = 0 V, V = V+/2)
L
O
Parameter
Symbol
Condition
Min
Typ
1
Max
Unit
V/ms
MHz
°
Slew Rate
S
R
Gain Bandwidth Product
Phase Margin
GBWP
C = 200 pF
L
1
Q
m
G
m
e
n
60
10
50
Gain Margin
dB
Input−Referred Voltage Noise
f = 50 kHz
nV/√Hz
3. Guaranteed by design and/or characterization.
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5
LMV321, LMV358, LMV324
TYPICAL CHARACTERISTICS
(T = 25°C and V = 5 V unless otherwise specified)
A
S
120
100
80
170
150
130
110
90
60
40
70
20
50
Over −40°C to +85°C
Same Gain $1.8 dB (Typ)
0
30
−20
10
10
100
1k
10k
100k
1M
10M
10
100
1k
10k
100k
1M
10M
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 4. Open Loop Phase Margin
Figure 3. Open Loop Frequency Response
(RL = 2 kW, TA = 255C, VS = 5 V)
(RL = 2 kW, TA = 255C, VS = 5 V)
100
90
80
70
60
50
40
30
20
10
0
80
75
70
65
60
55
50
45
40
35
30
V
S
= 2.7 V
f = 10 kHz
10
100
1k
10k
100k
−0.5
0
0.5
1
1.5
2
2.5
3
FREQUENCY (Hz)
INPUT COMMON MODE VOLTAGE (V)
Figure 5. CMRR vs. Frequency
Figure 6. CMRR vs. Input Common Mode
Voltage
(RL = 5 kW, VS = 5 V)
80
70
60
50
40
30
100
90
80
70
60
50
40
30
20
10
0
V
= 5 V
S
f = 10 kHz
1k
10k
100k
1M
10M
−1
0
1
2
3
4
5
INPUT COMMON MODE VOLTAGE (V)
FREQUENCY (Hz)
Figure 8. PSRR vs. Frequency
(RL = 5 kW, VS = 2.7 V, +PSRR)
Figure 7. CMRR vs. Input Common Mode
Voltage
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6
LMV321, LMV358, LMV324
TYPICAL CHARACTERISTICS
(T = 25°C and V = 5 V unless otherwise specified)
A
S
100
90
80
70
60
50
40
30
20
10
0
90
80
70
60
50
40
30
20
10
0
1k
10k
100k
FREQUENCY (Hz)
1M
10M
1k
10k
100k
1M
10M
FREQUENCY (Hz)
Figure 9. PSRR vs. Frequency
(RL = 5 kW, VS = 2.7 V, −PSRR)
Figure 10. PSRR vs. Frequency
(RL = 5 kW, VS = 5 V, +PSRR)
5
100
90
80
70
60
50
40
30
20
10
0
4.5
4
3.5
3
2.5
2
1.5
1
V
S
= 2.7 V
0.5
0
0
0.5
1
1.5
(V)
2
2.5
3
1k
10k
100k
1M
10M
V
CM
FREQUENCY (Hz)
Figure 11. PSRR vs. Frequency
Figure 12. VOS vs CMR
(RL = 5 kW, VS = 5 V, −PSRR)
5
4.5
4
200
180
160
140
120
100
80
3.5
3
2.5
2
1.5
1
60
40
V
S
= 5.0 V
0.5
0
20
0
0
0
0.5
1
1.5
2
2.5
(V)
3
3.5
4
4.5
5
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
SUPPLY VOLTAGE (V)
CM
Figure 13. VOS vs CMR
Figure 14. Supply Current vs. Supply Voltage
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7
LMV321, LMV358, LMV324
TYPICAL CHARACTERISTICS
(T = 25°C and V = 5 V unless otherwise specified)
A
S
1
0.1
0
−0.01
−0.02
−0.03
−0.04
−0.05
−0.06
−0.07
−0.08
−0.09
−0.1
R = 10 kW
L
V
out
= 1 V
Positive Swing
PP
Av = +1
0.01
0.001
10
100
1k
10k
100k
2.5
3
3.5
4
4.5
5
(Hz)
SUPPLY VOLTAGE (V)
Figure 15. THD+N vs Frequency
Figure 16. Output Voltage Swing vs Supply
Voltage (RL = 10k)
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0
−20
−40
−60
−80
−100
−120
−140
−160
Negative Swing
2.5
3
3.5
4
4.5
5
0
0.5
1
1.5
2
2.5
SUPPLY VOLTAGE (V)
V
OUT
REFERENCED TO V− (V)
Figure 17. Output Voltage Swing vs Supply
Voltage (RL = 10k)
Figure 18. Sink Current vs. Output Voltage
VS = 2.7 V
0
−20
120
100
80
60
40
20
0
−40
−60
−80
−100
−120
0
1
2
3
4
5
0
0.5
1.0
1.5
2.0
2.5
V
OUT
REFERENCED TO V− (V)
V
OUT
REFERENCED TO V+ (V)
Figure 19. Sink Current vs. Output Voltage
VS = 5.0 V
Figure 20. Source Current vs. Output Voltage
VS = 2.7 V
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LMV321, LMV358, LMV324
TYPICAL CHARACTERISTICS
(T = 25°C and V = 5 V unless otherwise specified)
A
S
110
100
90
80
70
60
50
40
30
20
10
0
R
= 2 kW
L
AV = 1
50 mV/div
2 ms/div
0
1
2
3
4
5
V
OUT
REFERENCED TO V+ (V)
Figure 21. Source Current vs. Output Voltage
VS = 5.0 V
Figure 22. Settling Time vs. Capacitive Load
R
= 1 MW
50 mV/div
L
AV = 1
2 ms/div
50 mV/div
2 ms/div
Non−Inverting (G = +1)
Input
Output
Figure 23. Settling Time vs. Capacitive Load
Figure 24. Step Response − Small Signal
50 mV/div
2 ms/div
1 V/div
2 ms/div
Non−Inverting (G = +1)
Inverting (G = −1)
Input
Input
Output
Output
Figure 26. Step Response − Large Signal
Figure 25. Step Response − Small Signal
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9
LMV321, LMV358, LMV324
TYPICAL CHARACTERISTICS
(T = 25°C and V = 5 V unless otherwise specified)
A
S
1 V/div
2 ms/div
Inverting (G = −1)
Input
Output
Figure 27. Step Response − Large Signal
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10
LMV321, LMV358, LMV324
APPLICATIONS
50 k
R1
5.0 k
V
CC
10 k
V
CC
V
CC
R2
−
V
ref
−
V
O
LMV321
V
O
LMV321
+
1
f
+
MC1403
+
O
1
2
2pRC
V
+
V
2.5 V
ref
CC
For: f = 1.0 kHz
o
R = 16 kW
C = 0.01 mF
R
R1
R2
C
R
V
+ 2.5 V(1 )
)
C
O
Figure 28. Voltage Reference
Figure 29. Wien Bridge Oscillator
V
CC
R3
C
C
R1
−
C
V
in
O
R2
V
LMV321
O
Hysteresis
+
CO = 10 C
R2
V
OH
R1
V
ref
V
O
+
V
ref
LMV321
−
Given: f = center frequency
o
V
O
V
in
V
OL
A(f ) = gain at center frequency
o
V
inL
V
inH
Choose value f , C
V
o
ref
Q
R1
Then : R3 +
V L +
(V * V
) V
) V
in
OL
ref)
ref)
ref
ref
pf
C
R1 ) R2
R1
O
R3
2 A(f )
V H +
(V
(V
* V
* V
R1 +
R2 +
in
OH
R1 ) R2
O
R1
R1 R3
H +
)
OH
OL
R1 ) R2
2
4Q R1 * R3
Figure 30. Comparator with Hysteresis
For less than 10% error from operational amplifier,
((Q f )/BW) < 0.1 where f and BW are expressed in Hz.
O
O
o
If source impedance varies, filter may be preceded with
voltage follower buffer to stabilize filter parameters.
Figure 31. Multiple Feedback Bandpass Filter
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11
LMV321, LMV358, LMV324
ORDERING INFORMATION
Number
of
Channels
†
Order Number
Specific Device Marking
Package Type
Shipping
LMV321SQ3T2G
Single
AAC
SC−70
3000 / Tape & Reel
3000 / Tape & Reel
4000 / Tape & Reel
3000 / Tape & Reel
2500 / Tape & Reel
2500 / Tape & Reel
2500 / Tape & Reel
(Pb−Free)
LMV321SN3T1G*
LMV358DMR2G
LMV358MUTAG
LMV358DR2G
Single
Dual
3AC
TSOP−5
(Pb−Free)
V358
AC
Micro8
(Pb−Free)
Dual
UDFN8
(Pb−Free)
Dual
V358
LMV324
SOIC−8
(Pb−Free)
LMV324DR2G
Quad
Quad
SOIC−14
(Pb−Free)
LMV324DTBR2G
LMV
324
TSSOP−14
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*Contact factory.
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12
LMV321, LMV358, LMV324
PACKAGE DIMENSIONS
SC−88A, SOT−353, SC−70
CASE 419A−02
ISSUE J
A
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
G
2. CONTROLLING DIMENSION: INCH.
3. 419A−01 OBSOLETE. NEW STANDARD
419A−02.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
5
4
3
−B−
S
INCHES
DIM MIN MAX
MILLIMETERS
MIN
1.80
1.15
0.80
0.10
MAX
2.20
1.35
1.10
0.30
1
2
A
B
C
D
G
H
J
0.071
0.045
0.031
0.004
0.087
0.053
0.043
0.012
0.026 BSC
0.65 BSC
M
M
B
D 5 PL
0.2 (0.008)
---
0.004
0.004
0.004
0.010
0.012
---
0.10
0.10
0.10
0.25
0.30
K
N
S
N
0.008 REF
0.20 REF
0.079
0.087
2.00
2.20
J
C
K
H
http://onsemi.com
13
LMV321, LMV358, LMV324
PACKAGE DIMENSIONS
TSOP−5
CASE 483−02
ISSUE H
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
OF BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
5. OPTIONAL CONSTRUCTION: AN
ADDITIONAL TRIMMED LEAD IS ALLOWED
IN THIS LOCATION. TRIMMED LEAD NOT TO
EXTEND MORE THAN 0.2 FROM BODY.
NOTE 5
5X
D
0.20 C A B
2X
2X
0.10
T
T
M
5
4
3
0.20
B
S
1
2
K
L
DETAIL Z
G
A
MILLIMETERS
DIM
A
B
C
D
MIN
3.00 BSC
1.50 BSC
MAX
DETAIL Z
J
0.90
1.10
0.50
C
0.25
SEATING
PLANE
0.05
G
H
J
K
L
M
S
0.95 BSC
H
0.01
0.10
0.20
1.25
0
0.10
0.26
0.60
1.55
10
3.00
T
_
_
2.50
SOLDERING FOOTPRINT*
1.9
0.074
0.95
0.037
2.4
0.094
1.0
0.039
0.7
0.028
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
14
LMV321, LMV358, LMV324
PACKAGE DIMENSIONS
Micro8™
CASE 846A−02
ISSUE H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
D
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE
BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED
0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE.
5. 846A-01 OBSOLETE, NEW STANDARD 846A-02.
H
E
E
MILLIMETERS
INCHES
NOM
−−
0.003
0.013
0.007
0.118
DIM
A
A1
b
c
D
MIN
−−
0.05
0.25
0.13
2.90
2.90
NOM
−−
MAX
MIN
−−
0.002
0.010
0.005
0.114
0.114
MAX
0.043
0.006
0.016
0.009
0.122
0.122
PIN 1 ID
1.10
0.15
0.40
0.23
3.10
3.10
e
0.08
b 8 PL
0.33
M
S
S
0.08 (0.003)
T B
A
0.18
3.00
E
3.00
0.118
e
L
0.65 BSC
0.55
4.90
0.026 BSC
0.021
0.193
0.40
4.75
0.70
5.05
0.016
0.187
0.028
0.199
SEATING
PLANE
H
−T−
E
A
0.038 (0.0015)
L
A1
c
SOLDERING FOOTPRINT*
1.04
0.38
8X
8X 0.041
0.015
3.20
4.24
5.28
0.126
0.167 0.208
0.65
6X0.0256
SCALE 8:1
mm
inches
ǒ
Ǔ
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
15
LMV321, LMV358, LMV324
PACKAGE DIMENSIONS
SOIC−8 NB
CASE 751−07
ISSUE AJ
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
−X−
A
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
8
5
4
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
S
M
M
B
0.25 (0.010)
Y
1
K
−Y−
MILLIMETERS
DIM MIN MAX
INCHES
G
MIN
MAX
0.197
0.157
0.069
0.020
A
B
C
D
G
H
J
K
M
N
S
4.80
3.80
1.35
0.33
5.00 0.189
4.00 0.150
1.75 0.053
0.51 0.013
C
N X 45
_
SEATING
PLANE
1.27 BSC
0.050 BSC
−Z−
0.10
0.19
0.40
0
0.25 0.004
0.25 0.007
1.27 0.016
0.010
0.010
0.050
8
0.020
0.244
0.10 (0.004)
M
J
H
D
8
0
_
_
_
_
0.25
5.80
0.50 0.010
6.20 0.228
M
S
S
X
0.25 (0.010)
Z
Y
SOLDERING FOOTPRINT*
1.52
0.060
7.0
4.0
0.275
0.155
0.6
0.024
1.270
0.050
mm
inches
ǒ
Ǔ
SCALE 6:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
16
LMV321, LMV358, LMV324
PACKAGE DIMENSIONS
UDFN8 1.8x1.2, 0.4P
CASE 517AJ−01
ISSUE O
NOTES:
A B
E
D
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.10
C
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.15 AND 0.30 mm FROM TERMINAL TIP.
4. MOLD FLASH ALLOWED ON TERMINALS
ALONG EDGE OF PACKAGE. FLASH MAY
NOT EXCEED 0.03 ONTO BOTTOM
SURFACE OF TERMINALS.
L1
PIN ONE
REFERENCE
DETAIL A
NOTE 5
0.10
C
TOP VIEW
(A3)
5. DETAIL A SHOWS OPTIONAL
CONSTRUCTION FOR TERMINALS.
MILLIMETERS
0.05
C
C
DIM MIN
0.45
A1 0.00
MAX
0.55
0.05
A
A
0.05
A3
b
b2
D
E
e
0.127 REF
0.15
0.25
A1
SEATING
C
0.30 REF
PLANE
SIDE VIEW
1.80 BSC
1.20 BSC
0.40 BSC
e/2
DETAIL A
8X L
L
0.45
0.55
0.03
e
L1 0.00
L2
(b2)
0.40 REF
4
5
1
MOUNTING FOOTPRINT*
SOLDERMASK DEFINED
(L2)
8
8X
0.66
8X b
7X
0.22
M
M
C A B
0.10
0.05
BOTTOM VIEW
NOTE 3
C
1.50
1
0.32
0.40 PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
17
LMV321, LMV358, LMV324
PACKAGE DIMENSIONS
SOIC−14
CASE 751A−03
ISSUE J
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
−A−
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
14
8
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.127
(0.005) TOTAL IN EXCESS OF THE D
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
−B−
P 7 PL
M
M
B
0.25 (0.010)
7
1
G
MILLIMETERS
DIM MIN MAX
INCHES
MIN MAX
F
R X 45
_
C
A
B
C
D
F
G
J
K
M
P
R
8.55
3.80
1.35
0.35
0.40
8.75 0.337 0.344
4.00 0.150 0.157
1.75 0.054 0.068
0.49 0.014 0.019
1.25 0.016 0.049
0.050 BSC
0.25 0.008 0.009
0.25 0.004 0.009
−T−
SEATING
PLANE
J
M
K
1.27 BSC
D 14 PL
0.19
0.10
0
M
S
S
0.25 (0.010)
T B
A
7
0
7
_
_
_
_
5.80
0.25
6.20 0.228 0.244
0.50 0.010 0.019
SOLDERING FOOTPRINT
7X
7.04
14X
1.52
1
14X
0.58
1.27
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
18
LMV321, LMV358, LMV324
PACKAGE DIMENSIONS
TSSOP−14
CASE 948G−01
ISSUE B
NOTES:
14X K REF
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MOLD FLASH OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL
NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.08 (0.003) TOTAL
IN EXCESS OF THE K DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
M
S
S
V
0.10 (0.004)
T U
S
0.15 (0.006) T U
N
0.25 (0.010)
14
8
2X L/2
M
B
L
N
−U−
PIN 1
IDENT.
F
7
1
DETAIL E
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE −W−.
S
K
0.15 (0.006) T U
A
−V−
MILLIMETERS
DIM MIN MAX
INCHES
MIN MAX
K1
A
B
C
D
F
G
H
J
4.90
4.30
−−−
0.05
0.50
5.10 0.193 0.200
4.50 0.169 0.177
J J1
1.20
−−− 0.047
0.15 0.002 0.006
0.75 0.020 0.030
SECTION N−N
0.65 BSC
0.026 BSC
0.60 0.020 0.024
0.20 0.004 0.008
0.16 0.004 0.006
0.30 0.007 0.012
0.25 0.007 0.010
0.50
0.09
0.09
0.19
J1
K
−W−
C
K1 0.19
L
M
6.40 BSC
0.252 BSC
0.10 (0.004)
0
8
0
8
_
_
_
_
SEATING
PLANE
−T−
H
G
DETAIL E
D
SOLDERING FOOTPRINT*
7.06
1
0.65
PITCH
01.34X6
14X
1.26
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
19
LMV321, LMV358, LMV324
Micro8 is a trademark of International Rectifier.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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