LV2205RL [ONSEMI]
15pF, 25V, SILICON, VARIABLE CAPACITANCE DIODE, TO-92, PLASTIC, CASE 182-06, TO-226AC, 2 PIN;
| 型号： | LV2205RL |
| 厂家： | 
ONSEMI |
| 描述： | 15pF, 25V, SILICON, VARIABLE CAPACITANCE DIODE, TO-92, PLASTIC, CASE 182-06, TO-226AC, 2 PIN |
| 文件： | 总3页 (文件大小：132K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBV2101LT1 Series,
MV2105, MV2101, MV2109,
LV2205, LV2209
Silicon Tuning Diodes
6.8–100 pF, 30 Volts
Voltage Variable Capacitance Diodes
http://onsemi.com
These devices are designed in popular plastic packages for the high
volume requirements of FM Radio and TV tuning and AFC, general
frequency control and tuning applications. They provide solid–state
reliability in replacement of mechanical tuning methods. Also
available in a Surface Mount Package up to 33 pF.
3
1
Cathode
Anode
SOT–23
TO–92
2
1
Cathode
Anode
• High Q
• Controlled and Uniform Tuning Ratio
• Standard Capacitance Tolerance – 10%
• Complete Typical Design Curves
MARKING
DIAGRAM
3
MAXIMUM RATINGS
1
Rating
Reverse Voltage
Symbol
Value
30
Unit
Vdc
XXX M
2
V
R
TO–236AB, SOT–23
CASE 318–08
STYLE 8
Forward Current
I
F
200
mAdc
XXX
M
= Device Code*
= Date Code
* See Table
Forward Power Dissipation
P
D
mW
mW/°C
@ T = 25°C
MMBV21xx
225
1.8
A
Derate above 25°C
@ T = 25°C
Derate above 25°C
MV21xx
LV22xx
280
2.8
A
XX
XXXX
YWW
Junction Temperature
Storage Temperature Range
T
+150
°C
°C
J
T
stg
–55 to +150
DEVICE MARKING
1
2
MMBV2101LT1 = M4G
MMBV2103LT1 = 4H
MMBV2105LT1 = 4U
MMBV2107LT1 = 4W
MMBV2108LT1 = 4X
MMBV2109LT1 = 4J
MV2101 = MV2101
MV2105 = MV2105
MV2109 = MV2109
LV2205 = LV2205
LV2209 = LV2209
TO–226AC, TO–92
CASE 182
XX
= Device Code Line 1*
XXXX = Device Code Line 2*
= Date Code
* See Table
STYLE 1
M
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Preferred devices are recommended choices for future use
and best overall value.
Characteristic
Symbol Min Typ Max
Unit
Reverse Breakdown Voltage
V
(BR)R
Vdc
(I = 10 µAdc)
R
MMBV21xx, MV21xx
LV22xx
30
25
–
–
–
–
Reverse Voltage Leakage
Current
(V = 25 Vdc, T = 25°C)
I
R
–
–
0.1
µAdc
R
A
Diode Capacitance
TC
–
280
–
ppm/°C
C
Temperature Coefficient
(V = 4.0 Vdc, f = 1.0 MHz)
R
Semiconductor Components Industries, LLC, 2001
685
Publication Order Number:
October, 2001 – Rev. 3
MMBV2101LT1/D
MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2205, LV2209
C , Diode Capacitance
Q, Figure of Merit
= 4.0 Vdc,
TR, Tuning Ratio
C /C
T
V
R
= 4.0 Vdc, f = 1.0 MHz
pF
V
R
2
30
f = 50 MHz
f = 1.0 MHz
Device
Min
Nom
Max
Typ
Min
Typ
Max
MMBV2101LT1/MV2101
MMBV2103LT1
6.1
9.0
6.8
10
15
22
27
33
7.5
11
450
400
400
350
300
200
2.5
2.5
2.5
2.5
2.5
2.5
2.7
2.9
2.9
2.9
3.0
3.0
3.2
3.2
3.2
3.2
3.2
3.2
LV2205/MMBV2105LT1/MV2105
MMBV2107LT1
13.5
19.8
24.3
29.7
16.5
24.2
29.7
36.3
MMBV2108LT1
LV2209MMBV2109LT1/MV2109
MMBV2101LT1, MMBV2103LT1, MMBV2105LT1, MMBV2107LT1 thru MMBV2109LT1, are also available in bulk. Use the device title and
drop the ”T1” suffix when ordering any of these devices in bulk.
PARAMETER TEST METHODS
1. CT, DIODE CAPACITANCE
4. TCC, DIODE CAPACITANCE TEMPERATURE
COEFFICIENT
(C = C + C ). C is measured at 1.0 MHz using a
T
C
J
T
TC is guaranteed by comparing C at V = 4.0 Vdc, f = 1.0
capacitance bridge (Boonton Electronics Model 75A or
equivalent).
C
T
R
MHz, T = –65°C with C at V = 4.0 Vdc, f = 1.0 MHz, T
A
T
R
A
= +85°C in the following equation, which defines TC :
C
2. TR, TUNING RATIO
C () 85°C) – C (–65°C)
TR is the ratio of C measured at 2.0 Vdc divided by C
measured at 30 Vdc.
6
T
T
T
T
10
C (25°C)
+ Ť
Ť·
TC
C
85 ) 65
T
3. Q, FIGURE OF MERIT
Accuracy limited by measurement of C to ±0.1 pF.
T
Q is calculated by taking the G and C readings of an
admittance bridge at the specified frequency and
substituting in the following equations:
2pfC
Q +
G
(Boonton Electronics Model 33AS8 or equivalent). Use
Lead Length [ 1/16”.
http://onsemi.com
686
MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2205, LV2209
TYPICAL DEVICE CHARACTERISTICS
1000
500
T = 25°C
f = 1.0 MHz
A
200
100
50
MMBV2109LT1/MV2109
MMBV2105LT1/MV2105
MMBV2101LT1/MV2101
20
10
5.0
2.0
1.0
0.5
20
30
0.1
0.2
0.3
1.0
2.0
3.0
5.0
10
V , REVERSE VOLTAGE (VOLTS)
R
Figure 1. Diode Capacitance versus Reverse Voltage
100
1.040
1.030
1.020
50
V
R
= 2.0 Vdc
T = 125°C
A
20
10
5.0
V
= 4.0 Vdc
R
1.010
1.000
0.990
0.980
0.970
0.960
T = 75°C
A
2.0
1.0
V
= 30 Vdc
R
0.50
0.20
0.10
T = 25°C
A
NORMALIZED TO C
T
at T = 25°C
= (CURVE)
A
0.05
V
R
0.02
0.01
0
5.0
10
15
20
25
30
-75
-50
-25
0
+25
+50
+75
+100 +125
V , REVERSE VOLTAGE (VOLTS)
R
T , JUNCTION TEMPERATURE (°C)
J
Figure 2. Normalized Diode Capacitance versus
Junction Temperature
Figure 3. Reverse Current versus Reverse Bias
Voltage
5000
5000
MMBV2101LT1/MV2101
MMBV2109LT1
3000
2000
3000
2000
1000
500
1000
MMBV2101LT1/MV2101
500
300
200
300
200
100
100
50
50
MMBV2109LT1/MV2109
30
20
30
20
T = 25°C
f = 50 MHz
T = 25°C
A
A
V
R
= 4.0 Vdc
10
1.0
10
10
10
V , REVERSE VOLTAGE (VOLTS)
20
30
20
30
50
70
100
200 250
2.0
3.0
5.0
7.0
f, FREQUENCY (MHz)
R
Figure 4. Figure of Merit versus Reverse Voltage
Figure 5. Figure of Merit versus Frequency
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687
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